JP6793647B2 - 堆積のモニタリングシステム及びその操作方法 - Google Patents
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
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- H01L22/10—Measuring as part of the manufacturing process
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Inorganic Chemistry (AREA)
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- Length Measuring Devices By Optical Means (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
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Description
Claims (10)
- マスクブランクを形成するために、基板上に、交互のモリブデン層とシリコン層を含む多層スタックを堆積すること、
堆積中の各シリコン層と各モリブデン層の層厚の変化を検出するために、各モリブデン層と各シリコン層の堆積をモニタすること、
堆積中の各シリコン層と各モリブデン層の前記層厚の前記変化に基づいて、堆積パラメータを調整することであって、各シリコン層と各モリブデン層の層厚の誤差が0.1オングストローム以下である、堆積パラメータを調整すること、
各シリコン層と各モリブデン層の端部を検出すると、各モリブデン層及び各シリコン層の前記端部を検出してから堆積チャンバの電源を遮断するまでにサブミリ秒の待ち時間遅延で、ハードウェア接続を介して直接前記堆積チャンバの電源を遮断すること、
を含む、モニタリング・堆積制御システムの操作方法。 - 各シリコン層と各モリブデン層の仕様を逸脱した層厚を検出すること、
前記仕様を逸脱した層厚に基づいて警告を発すること、及び
前記警告に基づいて、前記基板を破棄すること
を更に含む、請求項1に記載の方法。 - 各モリブデン層と各シリコン層の堆積をモニタすることは、
前記モリブデン層と前記シリコン層の最上層に向けて光出力を生成すること、
前記光出力を前記モリブデン層と前記シリコン層での反射光として集光すること、及び
前記モリブデン層と前記シリコン層の特性を決定するため、前記反射光のスペクトルを測定すること
を含む、請求項1に記載の方法。 - 各モリブデン層と各シリコン層の堆積をモニタすることは、
前記モリブデン層と前記シリコン層の最上層に向けて光出力を生成すること、
前記光出力を前記モリブデン層と前記シリコン層での反射光として集光すること、
前記反射光のスペクトルを測定すること、及び
前記反射光の前記スペクトルの平均波長に対して、前記反射光の前記スペクトルを正規化すること
を含む、請求項1に記載の方法。 - 各モリブデン層と各シリコン層の堆積前に既知のスペクトル応答を有する基準試料に対して、各モリブデン層と各シリコン層の堆積をモニタするためのセンサアレイの較正を行うことを更に含む、請求項1に記載の方法。
- マスクブランクを形成するために、基板上に、交互のモリブデン層とシリコン層を含む多層スタックを堆積するための堆積チャンバと、
堆積中に各モリブデン層と各シリコン層の層厚の変化を検出するために各モリブデン層と各シリコン層の堆積をモニタするためのセンサアレイと、
堆積中に前記層厚の前記変化に基づいて堆積パラメータを調整するための処理ユニットであって、各シリコン層と各モリブデン層の層厚の誤差が0.1オングストローム以下である、処理ユニットと、
前記センサアレイからの出力に基づいて前記層厚の変化を検出し、各シリコン層と各モリブデン層の端部を検出すると、各モリブデン層及び各シリコン層の前記端部を検出してから前記堆積チャンバの電源を遮断するまでにサブミリ秒の待ち時間遅延で、ハードウェア接続を介して直接前記電源を遮断するハードウェア直接制御システムと、
を備える、モニタリング・堆積制御システム。 - 前記センサアレイは、各モリブデン層と各シリコン層の仕様を逸脱した層厚を検出するためのものであり、
前記処理ユニットは、前記仕様を逸脱した層厚に基づいて警告を発するためのものであり、また、
前記警告に基づいて、前記基板が前記堆積チャンバから破棄される、請求項6に記載のシステム。 - 前記センサアレイは、
前記モリブデン層と前記シリコン層の最上層に向けて光出力を生成するための光源と、
前記光出力を前記モリブデン層と前記シリコン層での反射光として集光し、前記モリブデン層と前記シリコン層の特性の決定を目的として前記反射光のスペクトルを測定するための分光光度計と
を含む、請求項6に記載のシステム。 - 前記センサアレイは、
前記モリブデン層と前記シリコン層の最上層に向けて光出力を生成するための光源と、
前記光出力を前記モリブデン層と前記シリコン層での反射光として集光し、前記モリブデン層と前記シリコン層の特性の決定を目的として前記反射光のスペクトルを測定するための分光光度計とを含み、
前記処理ユニットは、前記反射光の前記スペクトルの平均波長に対して、前記反射光の前記スペクトルを正規化するためのものである、請求項6に記載のシステム。 - 前記基板を配置するための前記堆積チャンバ内のチャックと、
各モリブデン層と各シリコン層の堆積前に前記センサアレイを較正するための、前記チャック上の既知のスペクトル応答を有する基準試料と
を更に含む、請求項6に記載のシステム。
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US201462094270P | 2014-12-19 | 2014-12-19 | |
US62/094,270 | 2014-12-19 | ||
US14/839,656 US9870935B2 (en) | 2014-12-19 | 2015-08-28 | Monitoring system for deposition and method of operation thereof |
US14/839,656 | 2015-08-28 | ||
PCT/US2015/065897 WO2016100394A1 (en) | 2014-12-19 | 2015-12-15 | Monitoring system for deposition and method of operation thereof |
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KR (1) | KR102513441B1 (ja) |
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US20180286643A1 (en) * | 2017-03-29 | 2018-10-04 | Tokyo Electron Limited | Advanced optical sensor, system, and methodologies for etch processing monitoring |
KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
US10815561B2 (en) * | 2018-03-10 | 2020-10-27 | Applied Materials, Inc. | Method and apparatus for asymmetric selective physical vapor deposition |
US10138539B1 (en) * | 2018-04-03 | 2018-11-27 | Shiping Cheng | Method of managing coating uniformity with an optical thickness monitoring system |
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CN108425105A (zh) * | 2018-05-24 | 2018-08-21 | 江苏微导纳米装备科技有限公司 | 一种原子层沉积在线监控系统 |
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CN113862641B (zh) * | 2021-08-16 | 2023-09-12 | 江汉大学 | 一种原子层沉积前驱体用量的监测系统及其方法与应用 |
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US9870935B2 (en) | 2018-01-16 |
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SG11201704196YA (en) | 2017-07-28 |
TW201633374A (zh) | 2016-09-16 |
KR20170097174A (ko) | 2017-08-25 |
CN107210188A (zh) | 2017-09-26 |
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WO2016100394A1 (en) | 2016-06-23 |
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