CN108425105A - 一种原子层沉积在线监控系统 - Google Patents
一种原子层沉积在线监控系统 Download PDFInfo
- Publication number
- CN108425105A CN108425105A CN201810507330.8A CN201810507330A CN108425105A CN 108425105 A CN108425105 A CN 108425105A CN 201810507330 A CN201810507330 A CN 201810507330A CN 108425105 A CN108425105 A CN 108425105A
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- CN
- China
- Prior art keywords
- processing system
- signal
- atomic layer
- layer deposition
- signal processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 43
- 238000012544 monitoring process Methods 0.000 title claims abstract description 40
- 238000012545 processing Methods 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000002407 reforming Methods 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 238000004886 process control Methods 0.000 claims abstract description 15
- 230000002159 abnormal effect Effects 0.000 claims description 7
- 238000004458 analytical method Methods 0.000 claims description 5
- 230000002950 deficient Effects 0.000 claims description 4
- 238000004876 x-ray fluorescence Methods 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810507330.8A CN108425105A (zh) | 2018-05-24 | 2018-05-24 | 一种原子层沉积在线监控系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810507330.8A CN108425105A (zh) | 2018-05-24 | 2018-05-24 | 一种原子层沉积在线监控系统 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108425105A true CN108425105A (zh) | 2018-08-21 |
Family
ID=63164021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810507330.8A Pending CN108425105A (zh) | 2018-05-24 | 2018-05-24 | 一种原子层沉积在线监控系统 |
Country Status (1)
Country | Link |
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CN (1) | CN108425105A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111349914A (zh) * | 2020-04-09 | 2020-06-30 | 武汉大学 | 可在线/原位监测的微波等离子体化学气相沉积设备 |
CN113862641A (zh) * | 2021-08-16 | 2021-12-31 | 江汉大学 | 一种原子层沉积前驱体用量的监测系统及其方法与应用 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040266011A1 (en) * | 2003-06-26 | 2004-12-30 | Samsung Electronics Co., Ltd. | In-situ analysis method for atomic layer deposition process |
CN106249728A (zh) * | 2016-09-28 | 2016-12-21 | 清华大学 | 一种基于部件特性的火力发电机组在线性能监测方法 |
CN106525883A (zh) * | 2016-04-22 | 2017-03-22 | 中国科学院微电子研究所 | 一种原子层沉积系统原位实时检测方法及装置 |
CN107210188A (zh) * | 2014-12-19 | 2017-09-26 | 应用材料公司 | 用于沉积的监控系统与操作该系统的方法 |
CN107478175A (zh) * | 2017-08-18 | 2017-12-15 | 东南大学 | 一种原子层沉积薄膜原位监测控制系统 |
WO2018088771A1 (ko) * | 2016-11-09 | 2018-05-17 | 고려대학교 산학협력단 | X선 형광분석 원자층 증착 장치 및 x선 형광분석 원자층 증착 방법 |
CN208701206U (zh) * | 2018-05-24 | 2019-04-05 | 江苏微导纳米装备科技有限公司 | 一种原子层沉积在线监控系统 |
-
2018
- 2018-05-24 CN CN201810507330.8A patent/CN108425105A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040266011A1 (en) * | 2003-06-26 | 2004-12-30 | Samsung Electronics Co., Ltd. | In-situ analysis method for atomic layer deposition process |
CN107210188A (zh) * | 2014-12-19 | 2017-09-26 | 应用材料公司 | 用于沉积的监控系统与操作该系统的方法 |
CN106525883A (zh) * | 2016-04-22 | 2017-03-22 | 中国科学院微电子研究所 | 一种原子层沉积系统原位实时检测方法及装置 |
CN106249728A (zh) * | 2016-09-28 | 2016-12-21 | 清华大学 | 一种基于部件特性的火力发电机组在线性能监测方法 |
WO2018088771A1 (ko) * | 2016-11-09 | 2018-05-17 | 고려대학교 산학협력단 | X선 형광분석 원자층 증착 장치 및 x선 형광분석 원자층 증착 방법 |
CN107478175A (zh) * | 2017-08-18 | 2017-12-15 | 东南大学 | 一种原子层沉积薄膜原位监测控制系统 |
CN208701206U (zh) * | 2018-05-24 | 2019-04-05 | 江苏微导纳米装备科技有限公司 | 一种原子层沉积在线监控系统 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111349914A (zh) * | 2020-04-09 | 2020-06-30 | 武汉大学 | 可在线/原位监测的微波等离子体化学气相沉积设备 |
CN113862641A (zh) * | 2021-08-16 | 2021-12-31 | 江汉大学 | 一种原子层沉积前驱体用量的监测系统及其方法与应用 |
CN113862641B (zh) * | 2021-08-16 | 2023-09-12 | 江汉大学 | 一种原子层沉积前驱体用量的监测系统及其方法与应用 |
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Address after: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant after: Jiangsu micro nano technology Co.,Ltd. Address before: 214028, No. four, No. 7 Road, Wuxi New District, Jiangsu Applicant before: JIANGSU LEADMICRO NANO-EQUIPMENT TECHNOLOGY Ltd. |
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: No. 27 Changjiang South Road, Xinwu District, Wuxi City, Jiangsu Province, China Applicant after: Jiangsu micro nano technology Co.,Ltd. Address before: No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant before: Jiangsu micro nano technology Co.,Ltd. |