CN107146816A - 一种氧化物半导体薄膜及由其制备的薄膜晶体管 - Google Patents

一种氧化物半导体薄膜及由其制备的薄膜晶体管 Download PDF

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CN107146816A
CN107146816A CN201710229199.9A CN201710229199A CN107146816A CN 107146816 A CN107146816 A CN 107146816A CN 201710229199 A CN201710229199 A CN 201710229199A CN 107146816 A CN107146816 A CN 107146816A
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oxide semiconductor
film
semiconductor thin
oxide
thin
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CN107146816B (zh
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徐苗
徐华
吴为敬
陈为峰
王磊
彭俊彪
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Shenzhen Yonghang Technology Co.,Ltd.
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South China University of Technology SCUT
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Priority to PCT/CN2017/111109 priority patent/WO2018188332A1/zh
Priority to US16/529,833 priority patent/US11677031B2/en
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Abstract

本发明属于半导体材料与器件技术领域，公开了一种氧化物半导体薄膜及由其制备的薄膜晶体管。所述氧化物半导体薄膜由金属氧化物半导体薄膜中掺入少量稀土氧化物得到。所述薄膜晶体管包括栅极、氧化物半导体薄膜制备的沟道层、位于栅极和沟道层之间的栅绝缘层、以及分别连接在沟道层两端的源极和漏极。本发明的氧化物半导体薄膜材料及由其制备的薄膜晶体管具有非常优异的光照稳定性，而且具有制备工艺简单、适用性强的特点。

Description

一种氧化物半导体薄膜及由其制备的薄膜晶体管
技术领域
本发明属于半导体材料与器件技术领域，具体涉及一种氧化物半导体薄膜及由其制备的薄膜晶体管。
背景技术
新型平板显示(FPD,Flat Panel Display)产业的核心技术是薄膜晶体管(TFT,Thin Film Transistor)背板技术。金属氧化物TFT(MO-TFT,Metal Oxide-TFT)不仅具有较高的迁移率(在1～100cm2/(V·s)左右)，而且制作工艺相对简单，可以和目前的a-Si工艺兼容，制造成本较低，还具有优异的大面积均匀性。因此，MO-TFT技术自诞生以来便备受业界瞩目。
众所周知，作为显示器件核心部件的薄膜晶体管，在显示领域的应用中，其不可避免地会受到光的照射；而目前所开发的氧化物半导体薄膜由于氧空位的存在，使得禁带中产生相应的带隙态。该带隙态受到特定能量的光照射后，会激发出相应的电子空穴对，其在栅场的作用下导致器件阈值电压的偏移，从而引起显示画面的劣化。因此，如何实现优异的光照稳定性(在受到光照射时，器件的阈值电压几乎不发生偏移)是氧化物薄膜晶体管器件在实际应用中必须克服的难题。
现有技术，一方面，通过掺入一定量高断键能的氧化物，用以降低半导体薄膜中氧空位的浓度，这能一定程度上改善器件的光照稳定性，但同时也会降低器件的迁移率；而且，对于其在实际应用中而言，还存在巨大的挑战。另外一种方式，通过增加类似硅基工艺中的黑矩阵，对薄膜晶体管的有源层进行遮光处理。但是，该方式仅能一定程度上改善器件的光响应特性，对于长时间光照条件下的稳定性改善有限，使其应用领域受到了严重的限制。而且，增加遮光工艺，也即增加了制备的复杂程度，造成制造成本的提高。因此，提高氧化物薄膜晶体管的光照稳定性具有非常重大的现实意义。
因此，开发一种具有优异的光照稳定性的氧化物半导体材料，对于氧化物薄膜晶体管的产业化应用具有非同寻常的意义。
发明内容
为了解决以上现有技术的缺点和不足之处，本发明的首要目的在于提供一种氧化物半导体薄膜。
本发明的另一目的在于提供一种由上述氧化物半导体薄膜作为沟道层材料制备的薄膜晶体管。
本发明目的通过以下技术方案实现：
一种氧化物半导体薄膜，所述氧化物半导体薄膜为：在金属氧化物(Metal Oxide,MO)半导体薄膜中掺入少量稀土氧化物(Rare-earth Oxides,RO)作为光稳定剂，形成(MO)x(RO)y半导体材料，其中0<x<1，0.0001≤y≤0.2，x+y＝1。
所述金属氧化物MO中，M为In、Zn、Ga、Sn、Si、Al、Mg、Zr、Hf、Ta中的一种元素或两种以上的任意组合。
所述稀土氧化物RO材料包含：氧化镨、氧化铽、氧化镝、氧化镱中的一种或任意两种以上材料组合。
优选地，0.001≤y≤0.1；更优选为0.001≤y≤0.05。
优选地，所述氧化物半导体薄膜的厚度为5～100nm。
优选地，所述氧化物半导体薄膜的载流子浓度小于5×1019cm-3。
优选地，所述氧化物半导体薄膜采用单靶溅射的方法制备，或者采用溶液法、原子层沉积或脉冲激光沉积中的任意一种方式制备。
一种薄膜晶体管，所述薄膜晶体管包括栅极、沟道层、位于栅极和沟道层之间的栅绝缘层、以及分别连接在沟道层两端的源极和漏极；所述沟道层材料为上述氧化物半导体薄膜。
相对于现有技术，本发明具有如下优点及有益效果：
(1)本发明的氧化物半导体薄膜及薄膜晶体管，具有优异的光照稳定性。这是因为稀土氧化物掺入金属氧化物半导体中，稀土金属原子替代了原金属原子而导致原来的M-M相互作用减弱，致使价带顶位移，使原金属氧化物半导体材料能带结构由直接带隙向间接带隙转变。在入射光照射时，价带电子需要与声子相互作用才能跃迁到导带，对输运特性产生贡献。因此，稀土金属氧化物的掺入可以大大减少薄膜晶体管工作时的光生载流子。也即，在入射光照射时，器件的阈值电压和未受光照时几乎不发生偏移，同时其他性能参数亦不受光照影响；
(2)本发明的氧化物半导体薄膜材料中，稀土金属氧化物的含量相对较少，其对基体材料(化合物中占主要成分的材料)的迁移率等性能影响较小，不会造成器件基本性能的退化；
(3)本发明的氧化物半导体薄膜材料具有非常优异的光照稳定性，而且具有制备工艺简单、适用性强的特点，其对不同体系基体材料的改善同样明显。
附图说明
图1是本发明实施例5中薄膜晶体管的结构示意图；
图2是本发明实施例5中薄膜晶体管的器件光响应特性图；
图3是本发明实施例6中薄膜晶体管的结构示意图；
图4是本发明实施例6中薄膜晶体管的器件光响应特性图；
图5是本发明实施例7中薄膜晶体管的结构示意图；
图6是本发明实施例8中薄膜晶体管的结构示意图。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述，但本发明的实施方式不限于此。
实施例1
本实施例的一种氧化物半导体薄膜，所述氧化物半导体薄膜为：通过陶瓷靶磁控溅射方式在氧化铟锌半导体薄膜中掺入少量氧化镨作为光稳定剂，形成氧化镨掺杂氧化铟锌(Pr:IZO)半导体薄膜材料，其中，Pr:In:Zn＝0.2:5:1mol。Pr:IZO半导体薄膜的厚度为20nm，载流子浓度小于5×1019cm-3。
实施例2
本实施例的一种氧化物半导体薄膜，所述氧化物半导体薄膜为：通过陶瓷靶磁控溅射方式在氧化铟镓锌半导体薄膜中掺入少量氧化铽作为光稳定剂，形成氧化铽掺杂氧化铟镓锌(Tb:IGZO)半导体薄膜材料，其中，Tb:In:Ga:Zn＝0.1:1:1:0.5mol。Tb:IGZO半导体薄膜的厚度为40nm，载流子浓度小于5×1019cm-3。
实施例3
本实施例的一种氧化物半导体薄膜，所述氧化物半导体薄膜为：通过原子层沉积法在氧化铟锡锌半导体薄膜中掺入少量氧化铥作为光稳定剂，形成氧化铥掺杂氧化铟锡锌(Dy:ITZO)半导体薄膜材料，其中，Dy:In:Sn:Zn＝0.1:1:1:1mol。Dy:ITZO半导体薄膜的厚度为30nm，载流子浓度小于5×1019cm-3。
实施例4
本实施例的一种氧化物半导体薄膜，所述氧化物半导体薄膜为：通过原子层沉积法在氧化锌锡半导体薄膜中掺入少量氧化镱作为光稳定剂，形成氧化镱掺杂氧化锌锡(Yb:ZTO)半导体薄膜材料，其中，Yb:Sn:Zn＝0.2:1:1mol。Yb:ZTO半导体薄膜的厚度为30nm，载流子浓度小于5×1019cm-3。
实施例5
本实施例的一种薄膜晶体管，为刻蚀阻挡型结构，其结构示意图如图1所示，设置有：基板01、位于基板01之上的栅极02、位于基板01和栅极02之上的绝缘层03、覆盖在绝缘层03上表面并与栅极02对应的沟道层04、刻蚀阻挡层05、相互间隔并与沟道层04的两端电性相连的源极06-1和漏极06-2、以及钝化层07。
基板01为玻璃衬底，其上覆盖有缓冲层氧化硅。
栅极02的材料为金属磁控溅射方式制备的钼铝钼(Mo/Al/Mo)叠层结构，厚度为50/200/50nm。
绝缘层03为化学气相沉积方式制备的氮化硅(Si3N4)和氧化硅(SiO2)的叠层，厚度为250/50nm。
沟道层04的材料分别为实施例1和实施例2的氧化镨掺杂氧化铟锌(Pr:IZO)和氧化铽掺杂氧化铟镓锌(Tb:IGZO)两种材料。
刻蚀阻挡层05和钝化层07的材料为化学气相沉积方式制备的氧化硅(SiO2)，厚度都为300nm。
源极06-1以及漏极06-2的材料为金属钼铝钼(Mo/Al/Mo)叠层结构，厚度为50/200/50nm。
本实施例的薄膜晶体管可以为仅包括基板、栅极、绝缘层、沟道层、刻蚀阻挡层、源极和漏极、钝化层的封闭结构，也可以进一步包括像素定义层等，还可以与其它器件集成等。
其中薄膜的图案化采用光刻、并结合湿法或干法的刻蚀方式进行。
本实施例分别采用两种沟道层材料Pr:IZO和Tb:IGZO所制备的器件对应的光响应特性分别如图2中的(a)和(b)所示。由图2可以看出，通过掺入一定含量的氧化镨或氧化铥，器件随着不同波长的入射光照射及避光条件(Dark)下，阈值电压几乎不发生变化，表现出了优异的光稳定性。实验结果表明，本发明在基体氧化物材料中，掺入一定量的稀土氧化物能有效提高材料的光稳定性。
实施例6
本实施例的一种薄膜晶体管，为背沟道刻蚀型结构，其结构示意图如图3所示，设置有：基板01、位于基板01之上的栅极02、位于基板01和栅极02之上的绝缘层03、覆盖在绝缘层03上表面并与栅极02对应的沟道层04、相互间隔并与沟道层04的两端电性相连的源极05-1和漏极05-2、以及钝化层06。
基板01为柔性聚酰亚胺(PI)衬底，其上覆盖有缓冲层氧化硅。
栅极02的材料为金属磁控溅射方式制备的钼铝钼(Mo/Al/Mo)叠层结构，厚度为50/200/50nm。
绝缘层03为化学气相沉积方式制备的氮化硅(Si3N4)和氧化硅(SiO2)的叠层，厚度为250/50nm。
沟道层04的材料分别为实施例3和实施例4的氧化铥掺杂氧化铟锡锌(Dy:ITZO)和氧化镱掺杂氧化锌锡(Yb:ZTO)两种材料。
源极05-1以及漏极05-2的材料为金属钼铝钼(Mo/Al/Mo)叠层结构，厚度为50/200/50nm，其采用商用的磷酸基钼铝钼刻蚀液进行图案化。
钝化层06的材料为化学气相沉积方式制备的氧化硅(SiO2)，厚度为300nm。
本实施例的薄膜晶体管可以为仅包括基板、栅极、绝缘层、沟道层、源极和漏极、钝化层的封闭结构，也可以进一步包括像素定义层等，还可以与其它器件集成等。
其中薄膜的图案化采用光刻、并结合湿法或干法的刻蚀方式进行。
本实施例分别采用两种沟道层材料Dy:ITZO和Yb:ZTO所制备的器件对应的光响应特性分别如图4中的(a)和(b)所示。由图4结果可以看出，通过掺入一定含量的氧化铥或氧化镱，器件随着不同波长的入射光照射及避光条件(Dark)下，阈值电压几乎不发生变化，表现出了优异的光稳定性。实验结果表明，本发明在基体氧化物材料中，掺入一定量的稀土氧化物能有效提高材料的光稳定性。
实施例7
本实施例的一种薄膜晶体管，为背沟道刻蚀型结构，其结构示意图如图5所示，设置有：基板01、位于基板01之上的栅极02、位于基板01和栅极02之上的绝缘层03、覆盖在绝缘层03上表面并与栅极02对应的沟道层04、沟道保护层05、相互间隔并与沟道层的两端电性相连的源极06-1和漏极06-2、以及钝化层07。
基板01为柔性聚酰亚胺(PI)衬底，其上覆盖有缓冲层氧化硅。
栅极02的材料为金属磁控溅射方式制备的钼铝钼(Mo/Al/Mo)叠层结构，厚度为50/200/50nm。
绝缘层03为化学气相沉积方式制备的氮化硅(Si3N4)和氧化硅(SiO2)的叠层，厚度为250/50nm。
沟道层04的材料为实施例1中的氧化镨掺杂氧化铟锌(Pr:IZO)，厚度为20nm。
沟道保护层05的材料为磁控溅射方式制备的氧化锡掺杂氧化物或碳膜，厚度为10nm。
源极06-1以及漏极06-2的材料为金属钼铝钼(Mo/Al/Mo)叠层结构，厚度为50/200/50nm，其采用商用的磷酸基钼铝钼刻蚀液进行图案化。
钝化层07的材料为化学气相沉积方式制备的氧化硅(SiO2)，厚度为300nm。
本实施例的薄膜晶体管可以为仅包括基板、栅极、绝缘层、沟道层、沟道保护层、源极和漏极、钝化层的封闭结构，也可以进一步包括像素定义层等，还可以与其它器件集成等。
其中薄膜的图案化采用光刻、并结合湿法或干法的刻蚀方式进行。
所制备的器件对应的光响应特性结果表明：器件随着不同波长的入射光照射，阈值电压几乎不发生变化，表现出了优异的光稳定性。
实施例8
本实施例的一种薄膜晶体管，为自对准型结构，其结构示意图如图6所示，设置有：基板01、缓冲层02、沟道层03、位于沟道层03之上的绝缘层04以及栅极05、覆盖在沟道层03上表面的间隔层06、相互间隔并与沟道层的两端电性相连的源极07-1和漏极07-2。
基板01为硬质玻璃衬底。
缓冲层02为等离子增强化学气相沉积方式制备氧化硅。
沟道层03的材料为实施例2中的氧化铽掺杂氧化铟镓锌(Tb:IGZO)，厚度为40nm。
栅绝缘层04为氧化硅，厚度为300nm；栅极05为磁控溅射方式制备的钼铝钼(Mo/Al/Mo)叠层结构，厚度为50/200/50nm。
间隔层06为的氮化硅，厚度为200nm。
源极07-1以及漏极07-2的材料为金属钼铝钼(Mo/Al/Mo)叠层结构，厚度为50/200/50nm。
本实施例的薄膜晶体管可以为仅包括基板、沟道层、绝缘层、栅极、间隔层、源极和漏极的封闭结构，也可以进一步包括钝化层、以及像素定义层等，还可以与其它器件集成等。
其中薄膜的图案化采用光刻、并结合湿法或干法的刻蚀方式进行。
所制备的器件对应的光响应特性结果表明：器件随着不同波长的入射光照射，阈值电压几乎不发生变化，表现出了优异的光稳定性。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其它的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (9)

1.一种氧化物半导体薄膜，其特征在于所述氧化物半导体薄膜为：在金属氧化物MO半导体薄膜中掺入少量稀土氧化物RO作为光稳定剂，形成(MO)x(RO)y半导体材料，其中0<x<1，0.0001≤y≤0.2，x+y＝1。
2.根据权利要求1所述的一种氧化物半导体薄膜，其特征在于：所述金属氧化物MO中，M为In、Zn、Ga、Sn、Si、Al、Mg、Zr、Hf、Ta中的一种元素或两种以上的任意组合。
3.根据权利要求1所述的一种氧化物半导体薄膜，其特征在于：所述稀土氧化物RO材料包含：氧化镨、氧化铽、氧化镝、氧化镱中的一种或任意两种以上材料组合。
4.根据权利要求1所述的一种氧化物半导体薄膜，其特征在于：0.001≤y≤0.1。
5.根据权利要求4所述的一种氧化物半导体薄膜，其特征在于：0.001≤y≤0.05。
6.根据权利要求1所述的一种氧化物半导体薄膜，其特征在于：所述氧化物半导体薄膜的厚度为5～100nm。
7.根据权利要求1所述的一种氧化物半导体薄膜，其特征在于：所述氧化物半导体薄膜的载流子浓度小于5×1019cm-3。
8.根据权利要求1所述的一种氧化物半导体薄膜，其特征在于：所述氧化物半导体薄膜采用单靶溅射的方法制备，或者采用溶液法、原子层沉积或脉冲激光沉积中的任意一种方式制备。
9.一种薄膜晶体管，所述薄膜晶体管包括栅极、沟道层、位于栅极和沟道层之间的栅绝缘层、以及分别连接在沟道层两端的源极和漏极；其特征在于：所述沟道层材料为权利要求1～8任一项所述的氧化物半导体薄膜。
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018188332A1 (zh) * 2017-04-10 2018-10-18 华南理工大学 一种氧化物半导体薄膜及由其制备的薄膜晶体管
CN108735821A (zh) * 2018-05-29 2018-11-02 华南理工大学 一种镨铟锌氧化物薄膜晶体管及其制备方法
CN108987470A (zh) * 2018-07-16 2018-12-11 华南理工大学 薄膜晶体管、显示面板及薄膜晶体管的制作方法
CN110008936A (zh) * 2019-04-19 2019-07-12 广州新视界光电科技有限公司 一种指纹识别模组和指纹识别设备
CN110767745A (zh) * 2019-09-18 2020-02-07 华南理工大学 复合金属氧化物半导体及薄膜晶体管与应用
CN110797395A (zh) * 2019-09-18 2020-02-14 华南理工大学 掺杂型金属氧化物半导体及薄膜晶体管与应用
CN113078042A (zh) * 2021-03-22 2021-07-06 青岛科技大学 一种薄膜晶体管制备方法
WO2022105174A1 (zh) * 2020-11-20 2022-05-27 华南理工大学 一种金属氧化物半导体及薄膜晶体管与应用
WO2022127414A1 (zh) * 2020-12-18 2022-06-23 京东方科技集团股份有限公司 金属氧化物半导体材料、靶材及其制备方法、薄膜晶体管及其制备方法
WO2022166044A1 (zh) * 2021-02-03 2022-08-11 华南理工大学 一种金属氧化物透明导电薄膜及其应用
CN117457753A (zh) * 2023-11-20 2024-01-26 漳州市合琦靶材科技有限公司 一种双有源层铽掺杂氧化物薄膜晶体管及其制备方法

Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
US20230091604A1 (en) * 2021-01-28 2023-03-23 Boe Technology Group Co., Ltd. Thin film transistor and method for manufacturing the same, array substrate and display device
CN115084275A (zh) * 2021-03-15 2022-09-20 京东方科技集团股份有限公司 金属氧化物TFT及制造方法、x射线探测器和显示面板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101546783A (zh) * 2008-03-28 2009-09-30 株式会社东芝 半导体器件以及用于制造半导体器件的方法
CN101599436A (zh) * 2009-07-03 2009-12-09 中国科学院微电子研究所 用于mos器件的金属栅极结构及其制作方法
CN101740570A (zh) * 2008-11-26 2010-06-16 中国科学院微电子研究所 互补型金属氧化物半导体晶体管器件及其制作方法
CN102446969A (zh) * 2010-10-13 2012-05-09 中国科学院微电子研究所 半导体器件及其形成方法
CN104218074A (zh) * 2014-09-16 2014-12-17 北京大学 一种非晶半导体薄膜及其制备方法和应用
US20160315163A1 (en) * 2016-06-30 2016-10-27 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for forming gate insulators for tft structures

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686557A (en) * 1994-09-21 1997-11-11 Tomoegawa Paper Co., Ltd. Polyamide resin which can be dissolved in alcohol solvent, composition thereof, and method of use thereof
US5820960A (en) * 1996-05-15 1998-10-13 Saint-Gobain/Norton Industrial Ceramics Corporation Thin zirconia disk substrate
JP2002080693A (ja) * 2000-06-28 2002-03-19 Nippon Kayaku Co Ltd エポキシ樹脂組成物及びその硬化物
US6794031B2 (en) * 2001-09-28 2004-09-21 Ube Industries, Ltd. Cover-lay film and printed circuit board having the same
US7544967B2 (en) * 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
US7993560B2 (en) * 2006-04-20 2011-08-09 Curwood, Inc. Process for introducing an additive into a polymer melt
KR101468591B1 (ko) * 2008-05-29 2014-12-04 삼성전자주식회사 산화물 반도체 및 이를 포함하는 박막 트랜지스터
JP5616038B2 (ja) * 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US8513720B2 (en) * 2010-07-14 2013-08-20 Sharp Laboratories Of America, Inc. Metal oxide semiconductor thin film transistors
US8883555B2 (en) * 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US9546416B2 (en) * 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
CN102464864A (zh) * 2010-10-29 2012-05-23 E.I.内穆尔杜邦公司 光稳定的共聚醚酯组合物
TWI555205B (zh) * 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8921948B2 (en) * 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101942701B1 (ko) * 2011-01-20 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체 소자 및 반도체 장치
US9397222B2 (en) * 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8952377B2 (en) * 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952379B2 (en) * 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6226518B2 (ja) * 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
KR20130046357A (ko) * 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130055521A (ko) * 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치
US8969130B2 (en) * 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102034911B1 (ko) * 2012-01-25 2019-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2013179922A1 (en) * 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9153699B2 (en) * 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
JP6224931B2 (ja) * 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
KR102243843B1 (ko) * 2012-08-03 2021-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체 적층막 및 반도체 장치
TWI575663B (zh) * 2012-08-31 2017-03-21 半導體能源研究所股份有限公司 半導體裝置
CN102832235A (zh) * 2012-09-14 2012-12-19 华南理工大学 氧化物半导体及其制造方法
TWI605593B (zh) * 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
US9905585B2 (en) * 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
KR102241249B1 (ko) * 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
TWI620324B (zh) * 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
US9741864B2 (en) * 2013-05-09 2017-08-22 National Institute For Materials Science Thin-film transistor and method for manufacturing same
US9704894B2 (en) * 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
US9006736B2 (en) * 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN105472791A (zh) * 2015-12-23 2016-04-06 东莞珂洛赫慕电子材料科技有限公司 一种稀土掺杂半导体红外辐射厚膜电子浆料及其制备方法
US11545581B2 (en) * 2019-08-02 2023-01-03 South China University Of Technology Metal oxide (MO) semiconductor and thin-film transistor and application thereof
CN107146816B (zh) * 2017-04-10 2020-05-15 华南理工大学 一种氧化物半导体薄膜及由其制备的薄膜晶体管

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101546783A (zh) * 2008-03-28 2009-09-30 株式会社东芝 半导体器件以及用于制造半导体器件的方法
CN101740570A (zh) * 2008-11-26 2010-06-16 中国科学院微电子研究所 互补型金属氧化物半导体晶体管器件及其制作方法
CN101599436A (zh) * 2009-07-03 2009-12-09 中国科学院微电子研究所 用于mos器件的金属栅极结构及其制作方法
CN102446969A (zh) * 2010-10-13 2012-05-09 中国科学院微电子研究所 半导体器件及其形成方法
CN104218074A (zh) * 2014-09-16 2014-12-17 北京大学 一种非晶半导体薄膜及其制备方法和应用
US20160315163A1 (en) * 2016-06-30 2016-10-27 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for forming gate insulators for tft structures

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018188332A1 (zh) * 2017-04-10 2018-10-18 华南理工大学 一种氧化物半导体薄膜及由其制备的薄膜晶体管
US11677031B2 (en) 2017-04-10 2023-06-13 South China University Of Technology Oxide semiconductor thin-film and thin-film transistor consisted thereof
CN108735821B (zh) * 2018-05-29 2021-06-08 华南理工大学 一种镨铟锌氧化物薄膜晶体管及其制备方法
CN108735821A (zh) * 2018-05-29 2018-11-02 华南理工大学 一种镨铟锌氧化物薄膜晶体管及其制备方法
CN108987470A (zh) * 2018-07-16 2018-12-11 华南理工大学 薄膜晶体管、显示面板及薄膜晶体管的制作方法
CN108987470B (zh) * 2018-07-16 2021-01-01 华南理工大学 薄膜晶体管、显示面板及薄膜晶体管的制作方法
CN110008936A (zh) * 2019-04-19 2019-07-12 广州新视界光电科技有限公司 一种指纹识别模组和指纹识别设备
CN110767745A (zh) * 2019-09-18 2020-02-07 华南理工大学 复合金属氧化物半导体及薄膜晶体管与应用
WO2021052218A1 (zh) * 2019-09-18 2021-03-25 华南理工大学 掺杂型金属氧化物半导体及薄膜晶体管与应用
CN110797395A (zh) * 2019-09-18 2020-02-14 华南理工大学 掺杂型金属氧化物半导体及薄膜晶体管与应用
WO2022105174A1 (zh) * 2020-11-20 2022-05-27 华南理工大学 一种金属氧化物半导体及薄膜晶体管与应用
WO2022127414A1 (zh) * 2020-12-18 2022-06-23 京东方科技集团股份有限公司 金属氧化物半导体材料、靶材及其制备方法、薄膜晶体管及其制备方法
EP4167291A4 (en) * 2020-12-18 2024-02-28 Boe Technology Group Co Ltd METAL OXIDE SEMICONDUCTOR MATERIAL, TARGET MATERIAL AND PRODUCTION PROCESS THEREOF, THIN FILM TRANSISTOR AND PRODUCTION PROCESS THEREOF
WO2022166044A1 (zh) * 2021-02-03 2022-08-11 华南理工大学 一种金属氧化物透明导电薄膜及其应用
CN113078042A (zh) * 2021-03-22 2021-07-06 青岛科技大学 一种薄膜晶体管制备方法
CN113078042B (zh) * 2021-03-22 2022-04-26 青岛科技大学 一种薄膜晶体管制备方法
CN117457753A (zh) * 2023-11-20 2024-01-26 漳州市合琦靶材科技有限公司 一种双有源层铽掺杂氧化物薄膜晶体管及其制备方法

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