WO2022105174A1 - 一种金属氧化物半导体及薄膜晶体管与应用 - Google Patents
一种金属氧化物半导体及薄膜晶体管与应用 Download PDFInfo
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- WO2022105174A1 WO2022105174A1 PCT/CN2021/096784 CN2021096784W WO2022105174A1 WO 2022105174 A1 WO2022105174 A1 WO 2022105174A1 CN 2021096784 W CN2021096784 W CN 2021096784W WO 2022105174 A1 WO2022105174 A1 WO 2022105174A1
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- oxide
- metal oxide
- oxide semiconductor
- rare earth
- thin film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 239000010409 thin film Substances 0.000 title claims abstract description 84
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 66
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 66
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 45
- 229910052738 indium Inorganic materials 0.000 claims abstract description 33
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims description 94
- 239000010408 film Substances 0.000 claims description 61
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 50
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims description 50
- 229940075624 ytterbium oxide Drugs 0.000 claims description 50
- 229910001940 europium oxide Inorganic materials 0.000 claims description 47
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 claims description 47
- 229910003451 terbium oxide Inorganic materials 0.000 claims description 36
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 claims description 35
- 229910003447 praseodymium oxide Inorganic materials 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 23
- 229910003440 dysprosium oxide Inorganic materials 0.000 claims description 20
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 14
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 238000005137 deposition process Methods 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004611 light stabiliser Substances 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 19
- 239000001301 oxygen Substances 0.000 abstract description 17
- -1 rare earth ions Chemical class 0.000 abstract description 11
- 229910001449 indium ion Inorganic materials 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 140
- 238000004544 sputter deposition Methods 0.000 description 41
- 239000000758 substrate Substances 0.000 description 33
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 30
- 239000010949 copper Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 19
- 238000000151 deposition Methods 0.000 description 17
- 238000005530 etching Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 15
- 238000001755 magnetron sputter deposition Methods 0.000 description 15
- 229910052750 molybdenum Inorganic materials 0.000 description 15
- 239000011701 zinc Substances 0.000 description 15
- 239000011787 zinc oxide Substances 0.000 description 15
- 230000008859 change Effects 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- IWPSJDKRBIAWLY-UHFFFAOYSA-N gallium zirconium Chemical compound [Ga].[Zr] IWPSJDKRBIAWLY-UHFFFAOYSA-N 0.000 description 13
- 229910001928 zirconium oxide Inorganic materials 0.000 description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 238000005286 illumination Methods 0.000 description 12
- 238000010348 incorporation Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000012546 transfer Methods 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 239000011733 molybdenum Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 238000002161 passivation Methods 0.000 description 10
- FHNUEJOZZSDCTO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tantalum(5+) Chemical compound [O-2].[Zn+2].[In+3].[Ta+5].[O-2].[O-2].[O-2].[O-2] FHNUEJOZZSDCTO-UHFFFAOYSA-N 0.000 description 10
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229910052693 Europium Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- OPCPDIFRZGJVCE-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Zn+2].[In+3].[Ti+4] OPCPDIFRZGJVCE-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- 229910052771 Terbium Inorganic materials 0.000 description 2
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- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- DNAUJKZXPLKYLD-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo].[Mo] DNAUJKZXPLKYLD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 238000010168 coupling process Methods 0.000 description 1
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- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZBFOLPMOGPIUGP-UHFFFAOYSA-N dizinc;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Zn+2].[Zn+2] ZBFOLPMOGPIUGP-UHFFFAOYSA-N 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- OTZRTJJLQMKXCB-UHFFFAOYSA-N zinc oxygen(2-) tantalum(5+) Chemical compound [O-2].[Zn+2].[Ta+5] OTZRTJJLQMKXCB-UHFFFAOYSA-N 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/247—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
Definitions
- the invention relates to the field of semiconductor manufacturing, in particular to materials and device structures used in the manufacture of metal oxide semiconductor thin film transistor backplanes in flat panel display and detector applications, in particular to metal oxide semiconductors and thin film transistors and their applications.
- the indium ion (In 3+ ) has a relatively large ionic radius, which enables a higher probability of orbital overlap in the multi-component metal oxide to ensure its efficient carrier.
- the transport channel whose 5s orbital is the main electron transport channel.
- Oxygen vacancies are the main reason for the deterioration of the stability of metal oxide thin film transistors.
- IGZO also has some problems: the large addition of Ga 3+ and Zn 2+ ions greatly dilutes the In 3+ concentration, thereby reducing the overlap of the 5s orbital and reducing the electron mobility.
- the present invention provides a metal oxide semiconductor with relatively high mobility and strong photostability, which is a new co-doping strategy utilizing the special 4f electron orbital characteristics of rare earth oxides , in the oxide film with a high In ratio, while achieving higher mobility, the carrier concentration can be controlled, and a metal oxide semiconductor with strong photostability can be obtained.
- the novel co-doping strategy of the present invention is to simultaneously introduce two oxide materials of rare earth element R and oxide materials of rare earth element R' with different functions into the metal oxide containing indium, wherein the oxidation of rare earth element R
- the compound is the carrier concentration control agent
- the oxide of the rare earth element R' is the light stabilizer, that is, the oxide of the rare earth element R' is the charge conversion center
- its working principle is as follows:
- the carrier concentration control agent is Yb 2+ ion and Eu 2+ ion in ytterbium oxide and europium oxide using oxides of rare earth element R, which have fully and partially filled 4f electron orbits, respectively. Therefore, the divalent ion in the oxide of the rare earth element R has lower energy than the trivalent ion in the oxide. In oxide semiconductors, the carrier concentration can be significantly reduced when In 3+ ions are replaced by doping.
- the bond breaking enthalpy changes ( ⁇ Hf298) of Yb-O and Eu-O are 715.1kJ/mol and 557.0kJ/mol, respectively, which are much larger than the bond breaking energy (360.0kJ/mol) of In-O, they can effectively Control the oxygen vacancy concentration.
- the introduction of oxides of rare earth element R can effectively control the oxygen vacancies of oxide semiconductor thin films under high In system, in which, due to the ionic radius of Yb 2+ compared with Eu 2 + is smaller, which is more conducive to reducing the In-In distance in the oxide semiconductor, so it can also maintain its better high mobility characteristics.
- the light stabilizer is based on the characteristics of the rare earth ion radius of praseodymium oxide, terbium oxide, cerium oxide, dysprosium oxide and other materials in the oxide of rare earth element R', which are comparable to the indium ion radius in indium oxide, and the 4f orbital electronic structure in rare earth ions. And the 5s orbital of indium ion can form an efficient charge conversion center to improve its electrical stability, especially the stability under illumination.
- Another object of the present invention is to provide a thin film transistor including the metal oxide semiconductor.
- the third object of the present invention is to provide the application of the thin film transistor.
- the present invention adopts the following technical scheme to realize:
- the metal oxide semiconductor provided by the present invention is a compound semiconductor based on indium oxide, and two types of rare earth oxides with different functions but complementary roles are introduced by means of co-doping.
- the optional materials for the oxides of rare earth element R are ytterbium oxide and europium oxide, which are used as carrier concentration control agents, using Yb 2+ ions and Eu 2+ ions in ytterbium oxide and europium oxide, respectively with full and A half-filled 4f electron orbital. Therefore, the divalent ion in the oxide of the rare earth element R has lower energy than the trivalent ion in the oxide.
- the carrier concentration can be significantly reduced when In 3+ ions are replaced by doping.
- the bond breaking enthalpy changes ( ⁇ Hf298) of Yb-O and Eu-O are 715.1kJ/mol and 557.0kJ/mol, respectively, which are much larger than the bond breaking energy (360.0kJ/mol) of In-O, they can effectively Control the oxygen vacancy concentration.
- the introduction of oxides of rare earth element R can effectively control the oxygen vacancies of oxide semiconductor films under high In systems.
- the ionic radius of Yb 2+ is smaller than that of Eu 2+ , it is more beneficial to reduce the In-In distance in the oxide semiconductor, so it can maintain its better high mobility characteristics.
- the oxides of rare earth element R' can be selected from praseodymium oxide, terbium oxide, cerium oxide, and dysprosium oxide.
- the material selection is based on the electronic structure characteristics of the 4f orbital in the rare earth ion, which can form an efficient charge conversion center with the 5s orbital of the indium ion.
- the rare earth ions are in a stable low-energy state. Due to the modulation of the Fermi level, the film has a high carrier concentration, which can effectively shield the carrier scattering effect caused by the conversion center. The electrical properties of the device were not significantly affected.
- the electron orbital of rare earth element 4f and the 5s orbital of indium are coupled, and the rare earth ion is in an unstable activation state.
- it causes an increase in the off-state current of the device, and its scattering effect on carriers is enhanced, so that the subthreshold swing of the device is slightly increased;
- the photogenerated electrons will be quickly "captured” by the activated conversion center, and the photogenerated carriers will recombine with the ionized oxygen vacancies in the form of non-radiative transitions through their coupling orbitals, and the activated center will return to the activated state. . Therefore, the conversion center can provide a fast recombination channel for photogenerated carriers, avoiding its influence on I-V characteristics and stability. Greatly improve the stability of metal oxide semiconductor devices under illumination.
- the oxide of the rare earth element R is a carrier concentration control agent; the oxide of the rare earth element R is one or a combination of two materials of ytterbium oxide and europium oxide.
- the oxide of the rare earth element R' is a light stabilizer; the oxide of the rare earth element R' is one of praseodymium oxide, terbium oxide, cerium oxide, and dysprosium oxide, or a combination of any two or more materials.
- M is one or a combination of any two or more materials selected from Zn, Ga, Sn, Ge, Sb, Al, Mg, Ti, Zr, Hf, Ta, and W.
- the metal oxide semiconductor is prepared into a film by adopting any one of physical vapor deposition, chemical vapor deposition, atomic layer deposition, laser deposition, reactive ion deposition, and solution method.
- the second purpose of the present invention adopts the following technical scheme to realize:
- a thin film transistor comprising a gate electrode, an active layer, an insulating layer between the gate electrode and the active layer, a source electrode and a drain electrode respectively electrically connected to both ends of the active layer, and A spacer layer, wherein the active layer is the above-mentioned metal oxide semiconductor.
- the present invention also provides a thin film transistor formed based on the active layer obtained from the metal oxide semiconductor.
- the metal oxide semiconductor is formed by introducing two oxides of rare earth elements R with different functions into the metal oxide containing indium simultaneously.
- An oxide of rare earth element R' wherein the oxide of rare earth element R is used as a carrier concentration control agent, and the oxide of rare earth element R' is used as a light stabilizer, so that it can maintain good high mobility characteristics, and It can improve its electrical stability, especially the stability under illumination.
- the spacer layer is a structure of one of silicon oxide, silicon nitride, and silicon oxynitride thin films prepared by plasma enhanced chemical vapor deposition, or a stacked structure composed of any two or more.
- the third purpose of the present invention adopts the following technical scheme to realize:
- the present invention adopts a new co-doping strategy to introduce two rare earth oxide materials with different functions into the indium-based metal oxide to simultaneously control the carrier concentration and achieve the effects of good device light stability. , which provides a new idea for the realization of high-performance metal-oxide-semiconductor materials in the future.
- the rare earth element R oxides and rare earth element R' oxides are introduced into the indium-containing metal oxide to form a metal oxide semiconductor, and the rare earth element R oxides are used as carriers to control .
- the oxide of rare earth element R' acts as photostability enhancement, and its purpose is to effectively control the carrier concentration in the oxide semiconductor by utilizing the extremely high oxygen bond breaking energy in the oxide of rare earth element R.
- the 4f orbital electronic structure of the rare earth element R' ion and the 5s orbital of the indium ion can form an efficient charge conversion center to improve its electrical stability by utilizing the characteristics of the radii of rare earth ions that are comparable to those of indium ions in indium oxide. Especially the stability under light.
- FIG. 1 is a schematic structural diagram of the thin film transistor of Embodiment 13 and Embodiment 14;
- FIG. 2 is a schematic structural diagram of the thin film transistors of Embodiment 15, Embodiment 16 and Embodiment 17;
- FIG. 3 is a schematic structural diagram of the thin film transistor of Embodiment 18;
- Example 4 is a graph of device transfer characteristics and photo-generated current characteristics of Example 13;
- Example 5 is a graph of device transfer characteristics and photo-generated current characteristics of Example 14.
- Example 6 is a graph of device transfer characteristics and photo-generated current characteristics of Example 15;
- Example 7 is a graph of device transfer characteristics and photo-generated current characteristics of Example 16.
- Example 8 is a graph of device transfer characteristics and photo-generated current characteristics of Example 17;
- FIG. 9 is a graph showing device transfer characteristics and photo-generated current characteristics of Example 18.
- each reference number 01, substrate; 02, buffer layer; 03, channel layer; 04, insulating layer; 05, gate; 06, spacer layer; 07-1, source electrode; 07-2, drain pole; 08, etching barrier layer.
- Example 1 Praseodymium oxide and europium oxide doped indium tin zinc oxide semiconductor material
- a group of metal oxide semiconductor materials is: indium tin oxide (InSnZnO) is doped with praseodymium oxide as a charge conversion center, and europium oxide is doped as a carrier control agent to form praseodymium oxide, Europium oxide co-doped indium tin zinc oxide (Pr-Eu:InSnZnO) semiconductor material.
- indium tin oxide InSnZnO
- europium oxide is doped as a carrier control agent to form praseodymium oxide
- Pr-Eu:InSnZnO Europium oxide co-doped indium tin zinc oxide
- Example 2 Co-doped indium zinc oxide semiconductor material with praseodymium oxide and ytterbium oxide
- a group of metal oxide semiconductor materials is: indium zinc oxide (InZnTiO) is doped with praseodymium oxide as a charge conversion center, and ytterbium oxide is doped as a carrier control agent to form praseodymium oxide, Ytterbium oxide co-doped indium zinc titanium oxide (Pr-Yb:InZnTiO) semiconductor material.
- InZnTiO indium zinc oxide
- ytterbium oxide is doped as a carrier control agent to form praseodymium oxide
- Pr-Yb:InZnTiO Ytterbium oxide co-doped indium zinc titanium oxide
- Example 3 terbium oxide and europium oxide co-doped indium gallium zinc oxide semiconductor material
- a group of metal oxide semiconductor materials is: indium gallium zinc oxide (InGaZnO) is doped with terbium oxide as a charge conversion center, and doped with europium oxide as a carrier control agent to form terbium oxide, Europium oxide co-doped indium gallium zinc oxide (Tb-Eu:InGaZnO) semiconductor material.
- InGaZnO indium gallium zinc oxide
- Tb-Eu:InGaZnO Europium oxide co-doped indium gallium zinc oxide
- Example 4 Terbium oxide and ytterbium oxide co-doped indium gallium zirconium oxide semiconductor material
- a group of metal oxide semiconductor materials is: indium gallium zirconium oxide (InGaZrO) is doped with terbium oxide as a charge conversion center, and ytterbium oxide is doped as a carrier control agent to form terbium oxide, Ytterbium oxide co-doped indium gallium zirconium oxide (Tb-Yb:InGaZrO) semiconductor material.
- InGaZrO indium gallium zirconium oxide
- ytterbium oxide is doped as a carrier control agent to form terbium oxide
- Tb-Yb:InGaZrO Ytterbium oxide co-doped indium gallium zirconium oxide
- Example 5 Co-doped indium zinc oxide semiconductor material with cerium oxide and europium oxide
- a group of metal oxide semiconductor materials is: indium zinc oxide (InZnO) is doped with cerium oxide as a charge conversion center, and europium oxide is doped as a carrier control agent to form cerium oxide, oxide Europium co-doped indium zinc oxide (Ce-Eu:InZnO) semiconductor material.
- InZnO indium zinc oxide
- Ce-Eu:InZnO oxide Europium co-doped indium zinc oxide
- MO zinc oxide
- Example 6 Dysprosium oxide and ytterbium oxide co-doped indium zinc oxide tantalum semiconductor material
- a group of metal oxide semiconductor materials is: indium zinc oxide (InZnTaO) is doped with dysprosium oxide as a charge conversion center, and ytterbium oxide is doped as a carrier control agent to form dysprosium oxide, Ytterbium oxide co-doped indium zinc tantalum oxide (Dy-Yb:InZnTaO) semiconductor material.
- InZnTaO indium zinc oxide
- ytterbium oxide is doped as a carrier control agent to form dysprosium oxide
- Ytterbium oxide co-doped indium zinc tantalum oxide (Dy-Yb:InZnTaO) semiconductor material Ytterbium oxide co-doped indium zinc tantalum oxide
- Example 7 Co-doped indium tin zinc oxide film of praseodymium oxide and europium oxide
- a group of metal oxide semiconductor thin films is formed by magnetron sputtering of the praseodymium oxide and europium oxide co-doped indium tin zinc oxide semiconductor material in Example 1.
- Example 8 Co-doped indium-zinc-titanium oxide film of praseodymium oxide and ytterbium oxide
- a group of metal oxide semiconductor thin films is formed by magnetron sputtering of the praseodymium oxide and ytterbium oxide co-doped indium zinc oxide semiconductor materials in Example 2.
- Example 9 Terbium oxide and europium oxide co-doped indium gallium zinc oxide film
- a group of metal oxide semiconductor thin films is prepared by magnetron sputtering from the terbium oxide and europium oxide co-doped indium gallium zinc oxide semiconductor material of Example 3.
- Example 10 Terbium oxide and ytterbium oxide co-doped indium gallium zirconium oxide film
- a group of metal oxide semiconductor thin films is prepared by magnetron sputtering from the terbium oxide and ytterbium oxide co-doped indium gallium zirconium oxide semiconductor material of Example 4.
- Example 11 Co-doped indium zinc oxide film of cerium oxide and europium oxide
- a group of metal oxide semiconductor thin films are prepared from the cerium oxide and europium oxide co-doped indium zinc oxide semiconductor material of Example 5 by a solution method.
- Example 12 Dysprosium oxide and ytterbium oxide co-doped indium zinc tantalum oxide film
- a group of metal oxide semiconductor thin films is prepared from the dysprosium oxide and ytterbium oxide co-doped indium zinc oxide tantalum semiconductor material of Example 6 by magnetron sputtering.
- a group of thin film transistors adopts a back-channel etched structure.
- the schematic diagram of the structure is shown in Figure 1.
- layer 04 a channel layer 03 covering the upper surface of the insulating layer 04 and corresponding to the gate electrode 05, a source electrode 07-1 and a drain electrode 07-2 that are spaced apart from each other and electrically connected to both ends of the channel layer 03, and Spacer layer 06.
- the substrate 01 is a hard alkali-free glass substrate covered with a buffer layer 02 of silicon oxide.
- the material of the gate 05 is a metal molybdenum/copper (Mo/Cu) laminated structure prepared by magnetron sputtering, and the thickness is 20/400 nm.
- the insulating layer 04 is a stack of silicon nitride (Si 3 N 4 ) and silicon oxide (SiO 2 ) prepared by chemical vapor deposition, with a thickness of 250/50 nm, wherein the silicon nitride is in contact with the gate 05 in the lower layer, and the silicon oxide The upper layer is in contact with the channel layer 03 .
- the material of the channel layer 03 is the praseodymium oxide and europium oxide co-doped indium tin zinc oxide semiconductor material of Example 1, using indium tin zinc oxide (InSnZnO), europium oxide doped Hetero indium tin zinc oxide (Eu:InSnZnO), and praseodymium oxide, europium oxide co-doped indium tin zinc oxide (Pr-Eu:InSnZnO) three ceramic targets, using a single target or two co-sputtering methods , by adjusting the sputtering power of the two targets to achieve the preparation of thin films with different composition ratios.
- indium tin zinc oxide InSnZnO
- Eu:InSnZnO europium oxide doped Hetero indium tin zinc oxide
- Pr-Eu:InSnZnO europium oxide co-doped indium tin zinc oxide
- the material of the source electrode 07-1 and the drain electrode 07-2 is a metal molybdenum/copper (Mo/Cu) laminated structure with a thickness of 20/400nm, which is patterned with a commercial hydrogen peroxide-based etchant, which has a good effect on the channel.
- the damage of layer 03 is small, and there is no obvious etching residue.
- the material of the spacer layer 06 is silicon oxide (SiO 2 ) prepared by chemical vapor deposition, with a thickness of 300 nm and a deposition temperature of 250°C.
- the thin film transistor of this embodiment may be a closed structure including only a substrate 01, a gate 05, an insulating layer 04, a channel layer 03, a source electrode 07-1 and a drain electrode 07-2, and a spacer layer 06, or may further include a flat structure layers, reflective electrodes, pixel definition layers, etc., and can also be integrated with other devices.
- the patterning process of the thin film is performed by a photolithography process combined with a wet or dry etching method.
- the photo-generated current characteristic is characterized by using a commercial white LED light source (the light intensity is set to 10000 nits) to illuminate the channel layer 03 of the thin film transistor device , by evaluating the transfer characteristics of the device under illumination and no-illumination conditions, and extracting the changes in the threshold voltage and sub-threshold swing of the device to evaluate its strength; a large change in the threshold voltage indicates that its photo-generated current characteristics are strong, and vice versa.
- the photogenerated current characteristics of the device were significantly suppressed after doping a certain amount of praseodymium oxide.
- the increase of the content of praseodymium oxide the mobility and other characteristics of the device are further degraded, and the photogenerated current characteristics are further improved.
- the device prepared in this example is tested for the corresponding photo-generated current characteristics, as shown in Figures 4(b) and 4(c), the corresponding m values are 0 and 0.05 respectively.
- test results of this example show that the present invention can effectively control the carrier concentration of the material and improve the light stability by doping a certain amount of praseodymium oxide and europium oxide in the indium tin zinc oxide matrix material.
- a group of thin film transistors adopts a back-channel etched structure.
- the schematic diagram of the structure is shown in Figure 1.
- layer 04 a channel layer 03 covering the upper surface of the insulating layer 04 and corresponding to the gate electrode 05, a source electrode 07-1 and a drain electrode 07-2 that are spaced apart from each other and electrically connected to both ends of the channel layer 03, and Spacer layer 06.
- the substrate 01 is a hard alkali-free glass substrate covered with a buffer layer 02 of silicon oxide.
- the material of the gate 05 is a metal molybdenum/copper (Mo/Cu) laminated structure prepared by magnetron sputtering, and the thickness is 20/400 nm.
- the insulating layer 04 is a stack of silicon nitride (Si 3 N 4 ) and silicon oxide (SiO 2 ) prepared by chemical vapor deposition, with a thickness of 250/50 nm, wherein the silicon nitride is in contact with the gate 05 in the lower layer, and the silicon oxide The upper layer is in contact with the channel layer 03 .
- the material of the channel layer 03 is the praseodymium oxide and ytterbium oxide co-doped indium zinc oxide semiconductor material of Example 2, using indium zinc titanium oxide (InZnTiO), praseodymium oxide doped Hetero indium-zinc-titanium oxide (Pr:InZnTiO), and praseodymium oxide, ytterbium oxide co-doped indium-zinc-titanium oxide (Pr-Yb:InZnTiO) three ceramic targets, using a single target or two targets for co-sputtering By adjusting the sputtering power of the two targets, films with different composition ratios can be prepared.
- indium zinc titanium oxide InZnTiO
- Pr:InZnTiO praseodymium oxide doped Hetero indium-zinc-titanium oxide
- Pr-Yb:InZnTiO praseodymium oxide, ytterbium oxide co-do
- the material of the source electrode 07-1 and the drain electrode 07-2 is a metal molybdenum/copper (Mo/Cu) laminated structure with a thickness of 20/400nm, which is patterned with a commercial hydrogen peroxide-based etchant, which has a good effect on the channel.
- the damage of layer 03 is small, and there is no obvious etching residue.
- the material of the spacer layer 06 is silicon oxide (SiO 2 ) prepared by chemical vapor deposition, with a thickness of 300 nm and a deposition temperature of 250°C.
- the thin film transistor of this embodiment may be a closed structure including only a substrate 01, a gate 05, an insulating layer 04, a channel layer 03, a source electrode 07-1 and a drain electrode 07-2, and a spacer layer 06, or may further include a flat structure layers, reflective electrodes, pixel definition layers, etc., and can also be integrated with other devices.
- the patterning process of the thin film is performed by a photolithography process combined with a wet or dry etching method.
- the photo-generated current characteristic is characterized by using a commercial white LED light source (the light intensity is set to 10000 nits) to illuminate the channel layer 03 of the thin film transistor device , by evaluating the transfer characteristics of the device under illumination and no-illumination conditions, and extracting the changes in the threshold voltage and sub-threshold swing of the device to evaluate its strength; a large change in the threshold voltage indicates that its photo-generated current characteristics are strong, and vice versa.
- the device prepared in this example was tested for the corresponding photo-generated current characteristics, as shown in Figures 5(b) and 5(c), the corresponding m values were 0.05, and the n values were 0.001 and 0.05, respectively.
- test results of this embodiment show that the present invention can effectively control the carrier concentration of the material and improve the photostability by doping a certain amount of praseodymium oxide and ytterbium oxide into the indium zinc oxide matrix material.
- a group of thin film transistors adopts a top-gate self-aligned structure.
- the schematic diagram of the structure is shown in FIG. 2 .
- the substrate 01 is a hard glass substrate.
- the buffer layer 02 is silicon oxide prepared by plasma enhanced chemical vapor deposition.
- the material of the channel layer 03 is the terbium oxide and europium oxide co-doped indium gallium zinc oxide semiconductor material of the third embodiment, and the thickness is 30 nm.
- the insulating layer 04 is silicon oxide with a thickness of 300 nm; the gate 05 is a titanium/copper (Ti/Cu) laminated structure prepared by magnetron sputtering, with a thickness of 20/400 nm.
- the spacer layer 06 is made of silicon oxide with a thickness of 300 nm.
- the material of the source electrode 07-1 and the drain electrode 07-2 is a titanium/copper (Ti/Cu) laminated structure prepared by magnetron sputtering, and the thickness is 20/400 nm.
- the material of the channel layer 03 is the terbium oxide and europium oxide co-doped indium gallium zinc oxide semiconductor material of Example 3, using indium gallium zinc oxide (InGaZnO), terbium oxide doping Indium gallium zinc oxide (Tb: InGaZnO), and terbium oxide, europium oxide co-doped indium gallium zinc oxide (Tb-Eu: InGaZnO) three ceramic targets, using a single target or two targets co-sputtering By adjusting the sputtering power of the two targets, films with different composition ratios can be prepared.
- indium gallium zinc oxide InGaZnO
- Tb InGaZnO
- Tb-Eu InGaZnO
- the thin film transistor of this embodiment may be a closed structure including only the substrate 01, the channel layer 03, the insulating layer 04, the gate electrode 05, the spacer layer 06, the source electrode 07-1 and the drain electrode 07-2, or may further include a passivation It can also integrate with other devices and so on.
- the patterning of the thin film is performed by photolithography combined with wet or dry etching.
- the specific parameters in this example and the performance of the prepared thin film transistor device are shown in Table 3.
- the photo-generated current characteristic is characterized by using a commercial white LED light source to illuminate the channel layer of the thin film transistor device.
- the variation of the threshold voltage of the device is extracted to evaluate its strength; the threshold voltage varies greatly, indicating that its photo-generated current characteristics are strong, and vice versa.
- the device prepared in this example was tested for the corresponding photo-generated current characteristics, as shown in Figures 6(b) and 6(c), the corresponding m values were both 0.05, and the n values were 0.001 and 0.05, respectively.
- test results of this example show that the present invention can effectively control the carrier concentration of the material and improve the light stability by doping a certain amount of terbium oxide and europium oxide in the indium gallium zinc oxide matrix material.
- a group of thin film transistors adopts a top-gate self-aligned structure.
- the schematic diagram of the structure is shown in FIG. 2 .
- the substrate 01 is a hard glass substrate.
- the buffer layer 02 is silicon oxide prepared by plasma enhanced chemical vapor deposition.
- the material of the channel layer 03 is the terbium oxide and ytterbium oxide co-doped indium gallium zirconium oxide semiconductor material of Example 4, and the thickness is 30 nm.
- the insulating layer 04 is silicon oxide with a thickness of 300 nm; the gate 05 is a titanium/copper (Ti/Cu) laminated structure prepared by magnetron sputtering, with a thickness of 20/400 nm.
- the spacer layer 06 is made of silicon oxide with a thickness of 300 nm.
- the material of the source electrode 07-1 and the drain electrode 07-2 is a titanium/copper (Ti/Cu) laminated structure prepared by magnetron sputtering, and the thickness is 20/400 nm.
- the material of the channel layer 03 is the terbium oxide and ytterbium oxide co-doped indium gallium zirconium oxide semiconductor material of Example 4, and indium gallium zirconium oxide (InGaZrO) and terbium oxide are used for doping Indium gallium zirconium oxide (Tb: InGaZrO), and terbium oxide, ytterbium oxide co-doped indium gallium zirconium oxide (Tb-Yb: InGaZrO) three ceramic targets, using a single target or two targets co-sputtering By adjusting the sputtering power of the two targets, films with different composition ratios can be prepared.
- InGaZrO Indium gallium zirconium oxide
- Tb-Yb InGaZrO
- the thin film transistor of this embodiment may be a closed structure including only the substrate 01, the channel layer 03, the insulating layer 04, the gate electrode 05, the spacer layer 06, the source electrode 07-1 and the drain electrode 07-2, or may further include a passivation It can also integrate with other devices and so on.
- the patterning of the thin film is performed by photolithography combined with wet or dry etching.
- the specific parameters in this example and the performance of the prepared thin film transistor device are shown in Table 4.
- the photo-generated current characteristic is characterized by using a commercial white LED light source to illuminate the channel layer 03 of the thin film transistor device.
- the variation of the threshold voltage of the device is extracted to evaluate its strength; the threshold voltage varies greatly, indicating that its photo-generated current characteristics are strong, and vice versa.
- the photogenerated current characteristics of the device were significantly suppressed after doping a certain amount of terbium oxide.
- the characteristics of the device such as mobility are further degraded, and the photogenerated current characteristics are further improved.
- the device prepared in this example is tested for the corresponding photo-generated current characteristics, as shown in Figures 7(b) and 7(c), the corresponding n values are all 0.05, and the m values are 0 and 0.05 respectively.
- the threshold voltage of the device has almost no change; it exhibits excellent light stability, which corresponds to the weak photo-generated current characteristics in Table 4.
- test results of this embodiment show that the present invention can effectively control the carrier concentration of the material and improve the light stability by doping a certain amount of terbium oxide and ytterbium oxide into the indium gallium zirconium oxide matrix material.
- a group of thin film transistors adopts a self-aligned structure.
- the schematic diagram of the structure is shown in Figure 2, and is provided with: a substrate 01, a buffer layer 02, a channel layer 03, an insulating layer 04 located on the channel layer 03, and a gate 05.
- a spacer layer 06 covering the upper surface of the channel layer 03 and the gate electrode 05, a source electrode 07-1 and a drain electrode 07-2 on the spacer layer 06 and electrically connected to both ends of the channel layer 03.
- the substrate 01 is a hard glass substrate.
- the buffer layer 02 is silicon oxide prepared by plasma enhanced chemical vapor deposition.
- the material of the channel layer 03 is the cerium oxide and europium oxide co-doped indium zinc oxide semiconductor material of Example 5, and the thickness is 20 nm.
- the insulating layer 04 is silicon oxide with a thickness of 300 nm; the gate 05 is a molybdenum/copper/molybdenum (Mo/Cu/Mo) laminated structure prepared by magnetron sputtering with a thickness of 20/400/50 nm.
- Mo/Cu/Mo molybdenum/copper/molybdenum
- the spacer layer 06 is a silicon oxide film prepared by plasma enhanced chemical vapor deposition, and the thickness is 300 nm.
- the material of the source electrode 07-1 and the drain electrode 07-2 is a molybdenum/copper/molybdenum (Mo/Cu/Mo) laminated structure prepared by magnetron sputtering, with a thickness of 20/400/50 nm.
- the thin film transistor of this embodiment may be a closed structure including only the substrate 01, the channel layer 03, the insulating layer 04, the gate electrode 05, the spacer layer 06, the source electrode 07-1 and the drain electrode 07-2, or may further include a passivation It can also integrate with other devices and so on.
- the patterning of the thin film is performed by photolithography combined with wet or dry etching.
- the specific parameters in this example and the performance of the prepared thin film transistor device are shown in Table 5.
- the photo-generated current characteristic is characterized by using a commercial white LED light source to illuminate the channel layer 03 of the thin film transistor device.
- the variation of the threshold voltage of the device is extracted to evaluate its strength; the threshold voltage varies greatly, indicating that its photo-generated current characteristics are strong, and vice versa.
- the photogenerated current characteristics of the device were significantly suppressed after doping a certain amount of ceria.
- the characteristics such as the mobility of the device are further degraded, and the photogenerated current characteristics are further improved.
- the device prepared in this example was tested for the corresponding photo-generated current characteristics, as shown in Figures 8(b) and 8(c), the corresponding n values were all 0.05, and the m values were 0 and 0.05, respectively.
- the threshold voltage of the device has almost no change; it exhibits excellent light stability, which corresponds to the weak photo-generated current characteristics in Table 5.
- test results of this embodiment show that the present invention can effectively control the carrier concentration of the material and improve the light stability by doping a certain amount of cerium oxide and europium oxide in the indium zinc oxide matrix material.
- a group of thin film transistors adopts an etch stop type structure.
- the schematic diagram of the structure is shown in FIG. 3 , and is provided with: a substrate 01 , a gate 05 located on the substrate 01 , and an insulating layer 04 located on the substrate 01 and the gate 05 .
- the channel layer 03 covering the upper surface of the insulating layer 04 and corresponding to the gate electrode 05
- the etching barrier layer 08 the source electrode 07-1 and the drain electrode 07 which are spaced apart from each other and electrically connected to both ends of the channel layer 03 -2, and the spacer layer 06.
- the substrate 01 is a glass substrate covered with a buffer layer 02 of silicon oxide.
- the material of the gate 05 is a molybdenum-aluminum-molybdenum (Mo/Al/Mo) metal stack structure prepared by magnetron sputtering, with a thickness of 50/300/50 nm.
- Mo/Al/Mo molybdenum-aluminum-molybdenum
- the insulating layer 04 is a stack of silicon nitride (Si 3 N 4 ) and silicon oxide (SiO 2 ) prepared by chemical vapor deposition, with a thickness of 250/50 nm; wherein the silicon nitride is in contact with the gate 05 in the lower layer, and the silicon oxide The upper layer is in contact with the channel layer 03 .
- the material of the channel layer 03 is the dysprosium oxide and ytterbium oxide co-doped indium zinc tantalum oxide semiconductor material of Example 6, using indium zinc tantalum oxide (InZnTaO), ytterbium oxide doped Hetero indium zinc tantalum oxide (Yb:InZnTaO), and dysprosium oxide, ytterbium oxide co-doped indium zinc tantalum oxide (Dy-Yb:InZnTaO) three ceramic targets, using a single target or two co-sputtering methods , by adjusting the sputtering power of the two targets to achieve the preparation of thin films with different composition ratios.
- indium zinc tantalum oxide InZnTaO
- Yb:InZnTaO ytterbium oxide doped Hetero indium zinc tantalum oxide
- Dy-Yb:InZnTaO dysprosium oxide, ytterbium oxide co-doped indium zinc tanta
- the materials of the etch stop layer 08 and the spacer layer 06 are silicon oxide (SiO 2 ) thin films prepared by chemical vapor deposition, with a thickness of 300 nm and a deposition temperature of 300°C.
- the material of the source electrode 07-1 and the drain electrode 07-2 is a metal molybdenum aluminum molybdenum (Mo/Al/Mo) laminated structure with a thickness of 50/300/50 nm.
- the thin film transistor of this embodiment may be a thin film transistor including only a substrate 01, a gate electrode 05, an insulating layer 04, a channel layer 03, an etch stop layer 08, a source electrode 07-1 and a drain electrode 07-2, and a passivation layer.
- the closed structure may further include a flat layer, a reflective electrode, a pixel definition layer, etc., and may also be integrated with other devices.
- the patterning process of the thin film is performed by a photolithography process combined with a wet or dry etching method.
- the photo-generated current characteristic is characterized by using a commercial white LED light source to illuminate the channel layer 03 of the TFT device, and evaluating the illumination and no illumination conditions Under the transfer characteristics of the device, the change of the threshold voltage of the device is extracted to evaluate its strength; a large change in the threshold voltage indicates that its photo-generated current characteristics are strong, and vice versa.
- the photogenerated current characteristics of the device were significantly suppressed after doping a certain amount of dysprosium oxide.
- the characteristics of the device such as mobility are further degraded, and the photogenerated current characteristics are further improved.
- the device prepared in this example was tested for the corresponding photo-generated current characteristics, as shown in Figures 9(b) and 9(c), the corresponding n values were both 0.05, and the m values were 0 and 0.05, respectively.
- the threshold voltage of the device has almost no change; it exhibits excellent light stability, which corresponds to the weak photo-generated current characteristics in Table 6.
- test results of this embodiment show that the present invention can effectively control the carrier concentration of the material and improve the light stability by doping a certain amount of dysprosium oxide and ytterbium oxide into the indium zinc oxide tantalum matrix material.
- a display panel includes the thin film transistors in the above-mentioned embodiments 13-18, and the thin film transistors are used to drive display units in the display panel.
- a detector includes the thin film transistors in the above-mentioned embodiments 13-18, and the thin film transistors are used to drive the detection unit of the detector.
- the substrate in the present invention is not particularly limited, and a substrate 01 known in the art can be used.
- a substrate 01 known in the art can be used.
- the material of the gate 05 in the present invention is not particularly limited, and can be arbitrarily selected from materials known in the art. Such as: transparent conductive oxides (ITO, AZO, GZO, IZO, ITZO, FTO, etc.), metals (Mo, Al, Cu, Ag, Ti, Au, Ta, Cr, Ni, etc.) and their alloys, as well as metals and oxides composite conductive films formed by metal and metal stacking (Mo/Al/Mo, Ti/Al/Ti, etc.)
- the preparation method of the gate 05 film can be sputtering, electroplating, thermal evaporation and other deposition methods, and the sputtering deposition method is preferred, because the film prepared by this method has good adhesion to the substrate 01, excellent uniformity, and can be large. area preparation.
- a transparent electrode needs to be used in a transparent display, which can be a single layer of ITO as a gate electrode or ITO/Ag/ITO as a gate electrode. electrode.
- a transparent display which can be a single layer of ITO as a gate electrode or ITO/Ag/ITO as a gate electrode. electrode.
- high-temperature processes are required for applications in special fields, and the gate electrode can be selected from a metal alloy film that can withstand high temperatures.
- the material of the insulating layer 04 in the present invention is not particularly limited, and can be arbitrarily selected from materials known in the art. Such as: silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, hafnium oxide, yttrium oxide, and polymer organic film layers.
- the composition of these insulating films can be inconsistent with the theoretical stoichiometric ratio.
- the insulating layer 04 can be formed by stacking various insulating films, which can form better insulating properties on the one hand, and improve the interface properties between the channel layer 03 and the insulating layer 04 on the other hand.
- the insulating layer 04 can be prepared in various ways, and can be prepared by physical vapor deposition, chemical vapor deposition, atomic layer deposition, laser deposition, anodization, or solution method.
- the etching solution used in wet etching includes: a mixed solution of phosphoric acid, nitric acid and glacial acetic acid or a mixed solution based on hydrogen peroxide.
- the etching rate of the metal oxide semiconductor material in the hydrogen peroxide-based etching solution is less than 1 nm/min.
- a plasma etching process can be selected, and the etching gas includes chlorine-based or fluorine-based gas.
- single-target sputtering or multi-target co-sputtering can be selected, preferably single-target sputtering.
- single-target sputtering can provide more repeatable and stable films, and the microstructure of the film is more controllable; unlike co-sputtered films, the sputtered particles are subject to more factors in the process of recombination interference.
- the power source can be selected from radio frequency (RF) sputtering, direct current (DC) sputtering or alternating current (AC) sputtering, preferably AC sputtering commonly used in the industry.
- RF radio frequency
- DC direct current
- AC alternating current
- the sputtering gas pressure is optional to be 0.1Pa to 10Pa, preferably 0.3Pa to 0.7Pa.
- the oxygen partial pressure is optionally 0-1 Pa, preferably 0.001-0.5 Pa, more preferably 0.01-0.1 Pa.
- the oxygen partial pressure has a direct effect on the carrier concentration of the film, and some defects related to oxygen vacancies will be introduced. Too low oxygen content may cause serious oxygen mismatch in the film and increase the carrier concentration; while too high oxygen vacancies will cause more weak bonds and reduce the reliability of the device.
- the substrate temperature is preferably 200-300°C.
- a certain substrate temperature can effectively improve the bonding mode of the sputtered particles after they reach the substrate 01, reduce the probability of the existence of weak bonding bonds, and improve the stability of the device.
- this effect can also be achieved by subsequent processes such as annealing treatment.
- the thickness of the channel layer 03 is optional to be 2-100 nm, preferably 5-50 nm, and more preferably 20-40 nm.
- the source-drain electrode material in the present invention is not particularly limited, and can be arbitrarily selected from materials known in the art on the premise of not affecting the realization of various required structural devices.
- materials known in the art on the premise of not affecting the realization of various required structural devices.
- transparent conductive oxides ITO, AZO, GZO, IZO, ITZO, FTO, etc.
- metals Mo, Al, Cu, Ag, Ti, Au, Ta, Cr, Ni, etc.
- metals and oxides composite conductive films formed by metal and metal stacking Mo/Al/Mo, Ti/Al/Ti, etc.
- the preparation method of the source-drain electrode film can be sputtering, thermal evaporation and other deposition methods, and the sputtering deposition method is preferred, because the film prepared in this way has good adhesion to the substrate 01, excellent uniformity, and can be prepared in a large area. .
- the etching solution for wet etching in the embodiment of the present invention is an etching solution based on conventional metals in the industry (eg, hydrogen peroxide-based etching solution), mainly because a metal oxide semiconductor material of the present invention can effectively resist wet
- the etching of hydrogen peroxide-based etching solution has a high etching selectivity ratio with metals (such as molybdenum, molybdenum alloy, molybdenum/aluminum/molybdenum, etc.), and the metal oxide semiconductor layer is basically not affected by the etching solution.
- the prepared device has excellent performance and good stability.
- the dry etching in the embodiments of the present invention is based on conventional etching gases in the industry (such as chlorine-based gas, fluorine-based gas, etc.), which has little effect on the oxide semiconductor layer of the present invention, and the prepared device performance Excellent and stable.
- the material of the passivation layer in the present invention is not particularly limited, and can be arbitrarily selected from materials known in the art. Such as: silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, hafnium oxide, yttrium oxide, and polymer organic film layers.
- the composition of these insulating films can be inconsistent with the theoretical stoichiometric ratio.
- the insulating layer 04 can be formed by stacking multiple insulating films, which can form better insulating properties on the one hand, and improve the interface properties between the channel layer 03 and the passivation layer on the other hand.
- the passivation layer can be prepared in various ways, and can be prepared by physical vapor deposition, chemical vapor deposition, atomic layer deposition, laser deposition or solution method.
- the film deposited by sputtering generally has a faster rate of deposition; the film does not have enough time to perform the relaxation process during the deposition process, which will cause a certain proportion of dislocation and stress. remains in the film. This requires a later thermal annealing treatment to continue to achieve the desired relative steady state and improve the properties of the film.
- the annealing treatment is mostly set after the deposition of the channel layer 03 and the deposition of the passivation layer.
- performing annealing treatment after the deposition of the channel layer 03 can effectively improve the in-situ defects in the channel layer 03 and improve the ability of the channel layer 03 to resist possible damage in subsequent processes.
- this may require an "activation" process to further eliminate effects such as interface states and some donor doping.
- the treatment method may not only be heat treatment, but may include plasma treatment of interfaces (eg, insulating layer 04/semiconductor interface, channel layer 03/passivation layer interface, etc.).
- interfaces eg, insulating layer 04/semiconductor interface, channel layer 03/passivation layer interface, etc.
- the performance of the device can be effectively improved and the stability of the device can be improved by the above-mentioned treatment process.
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Abstract
Description
Claims (10)
- 一种金属氧化物半导体,其特征在于,该金属氧化物半导体为:在含铟的金属氧化物MO-In 2O 3半导体中,分别掺入至少两种的稀土元素R的氧化物和稀土元素R’的氧化物,形成In xM yR nR’ mO z半导体材料,其中,x+y+m+n=1,0.4≤x<0.9999,0≤y<0.5,0.0001≤(m+n)≤0.2,m>0,n>0,z>0。
- 根据权利要求1所述的金属氧化物半导体,其特征在于,所述稀土元素R的氧化物为载流子浓度控制剂。
- 根据权利要求1所述的金属氧化物半导体,其特征在于,所述稀土元素R的氧化物为氧化镱、氧化铕中的一种或两种材料组合。
- 根据权利要求1所述的金属氧化物半导体,其特征在于,所述稀土元素R’的氧化物为光稳定剂。
- 根据权利要求1所述的金属氧化物半导体,其特征在于,所述稀土元素R’的氧化物为氧化镨、氧化铽、氧化铈、氧化镝中的一种或任意两种以上材料组合。
- 根据权利要求1所述的金属氧化物半导体,其特征在于,所述MO中,M为Zn、Ga、Sn、Ge、Sb、Al、Mg、Ti、Zr、Hf、Ta、W中的一种或任意两种以上材料组合。
- 根据权利要求1所述的金属氧化物半导体,其特征在于,所述金属氧化物半导体通过采用物理气相沉积工艺、化学气相沉积工艺、原子层沉积工艺、激光沉积工艺、反应离子沉积工艺、溶液法工艺中的任意一种工艺的方法制备成膜。
- 一种薄膜晶体管,该薄膜晶体管包括栅极、有源层、位于所述栅极和有源层之间的绝缘层、分别电性连接在所述有源层两端的源极和漏极、以及间隔层,其特征在于,所述有源层为权利要求1所述的金属氧化物半导体。
- 根据权利要求8所述的薄膜晶体管,其特征在于,所述间隔层为采用等离子增强化学气相沉积方式制备的氧化硅、氮化硅、氮氧化硅薄膜中的一种结构或者任意两种以上组成的叠层结构。
- 如权利要求8所述的薄膜晶体管在显示面板或探测器中的应用。
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