CN107045978A - 半导体装置 - Google Patents
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- CN107045978A CN107045978A CN201710069042.4A CN201710069042A CN107045978A CN 107045978 A CN107045978 A CN 107045978A CN 201710069042 A CN201710069042 A CN 201710069042A CN 107045978 A CN107045978 A CN 107045978A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 239000002184 metal Substances 0.000 claims abstract description 95
- 229910052751 metal Inorganic materials 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
得到一种即使在形成通路孔后进行加热,也能够确保基板表面侧和背面侧的导通的半导体装置。在半导体基板(1)设置有从背面起贯穿至表面的通路孔(2)。电极(3)以将通路孔(2)堵塞的方式设置于半导体基板(1)的表面。金属膜(4)设置于半导体基板(1)的背面、通路孔(2)的侧壁(2a)以及电极(3)的下表面。在半导体基板(1)的背面,在金属膜(4)设置有开口(5)。开口(5)仅与通路孔(2)的外周的一部分接触。在开口(5)露出通路孔(2)的侧壁(2a)和金属膜(4)之间的界面(A)。
Description
技术领域
本发明涉及一种设置有将半导体基板贯穿的通路孔的半导体装置。
背景技术
在获得形成有半导体元件的基板表面和其相反侧的背面之间的导通的情况下,在半导体基板设置通路孔,经由通路孔将表面侧的电极和背面侧的金属膜彼此连接(例如参照专利文献1)。
在制造上述半导体装置的情况下,首先,在半导体基板的表面形成电极。然后,对半导体基板的背面侧进行磨削直至成为规定的厚度。然后,通过抗蚀剂等,对背面的除设为通路孔的部位以外进行掩盖,对半导体基板进行蚀刻直至电极从背面侧露出。在对掩模进行去除、清洗后,在背面、通路孔的侧壁以及电极的下表面形成金属膜。由于在通路孔内露出电极的背面,因此表面侧的电极和背面侧的金属膜接触。
专利文献1:日本特开平10-303198号公报
由于半导体装置的高集成化,通路孔的平面方向的尺寸也缩小。因此,在形成通路孔时,需要进一步提高干式蚀刻的各向异性,以不会向水平方向扩展。因此,在进行蚀刻时使在通路孔侧壁形成的膜更牢固,以不会在横向进行蚀刻。因此,即使进行蚀刻后的去除、清洗也未能除尽的残渣残留于通路孔侧壁。在形成通路孔后对半导体装置进行了加热时,由于从由背面侧的金属膜覆盖的残渣产生的气体而对半导体基板和金属膜的界面施加压力。该压力在界面传递,将密接强度弱的电极和金属膜的界面扩开。其结果,存在二者的连接断开而变得不能获得导通这一问题。
发明内容
本发明就是为了解决上述课题而提出的,其目的在于得到下述半导体装置,即,即使在形成通路孔后进行加热,也能够确保基板表面侧和背面侧的导通。
本发明所涉及的半导体装置的特征在于,具有:半导体基板,其设置有从背面起贯穿至表面的通路孔;电极,其以将所述通路孔堵塞的方式设置于所述半导体基板的所述表面;以及金属膜,其设置于所述半导体基板的所述背面、所述通路孔的侧壁以及所述电极的下表面,在所述半导体基板的所述背面,在所述金属膜设置开口,所述开口仅与所述通路孔的外周的一部分接触,在所述开口露出所述通路孔的所述侧壁和所述金属膜之间的界面。
发明的效果
在本发明中,从残渣产生的气体在半导体基板和金属膜之间的界面传播,到达在金属膜设置的开口。开口与通路孔的外周接触,在开口处露出通路孔的侧壁和金属膜之间的界面。因此,在界面处传播的气体释放至半导体装置之外。其结果,由于能够防止电极和金属膜的连接断开,因此即使在形成通路孔后进行加热,也能够确保基板表面侧和背面侧的导通。
附图说明
图1是表示本发明的实施方式1所涉及的半导体装置的剖视图。
图2是表示本发明的实施方式1所涉及的半导体装置的仰视图。
图3是表示对比例所涉及的半导体装置的剖视图。
图4是表示对比例所涉及的半导体装置的剖视图。
图5是表示本发明的实施方式2所涉及的半导体装置的剖视图。
图6是表示本发明的实施方式2所涉及的半导体装置的仰视图。
图7是表示本发明的实施方式3所涉及的半导体装置的剖视图。
图8是表示本发明的实施方式3所涉及的半导体装置的剖视图。
图9是表示本发明的实施方式4所涉及的半导体装置的剖视图。
图10是表示本发明的实施方式5所涉及的半导体装置的俯视图。
图11是沿图10的I-II的剖视图。
图12是表示本发明的实施方式6所涉及的半导体装置的剖视图。
标号的说明
1半导体基板,2通路孔,2a侧壁,3电极,4金属膜,5、8、9、10、11、14开口,6第1金属膜,7第2金属膜,12第1电极,13第2电极,A、B界面
具体实施方式
参照附图,对本发明的实施方式所涉及的半导体装置进行说明。对相同或者相对应的结构要素标注相同的标号,有时省略重复的说明。
实施方式1
图1是表示本发明的实施方式1所涉及的半导体装置的剖视图。图2是表示本发明的实施方式1所涉及的半导体装置的仰视图。
在半导体基板1的表面形成有晶体管等半导体元件(未图示)。设置有从半导体基板1的背面起贯穿至表面的通路孔2。在这里,将在通路孔2内露出的半导体基板1的内壁设为通路孔2的侧壁2a。此外,在从与半导体基板1的背面垂直的方向观察到的俯视图中,通路孔2的平面形状是圆,但也可以是椭圆等其他形状。
电极3以将通路孔2堵塞的方式设置于半导体基板1的表面。金属膜4设置于半导体基板1的背面、通路孔2的侧壁2a以及电极3的下表面。金属膜4和电极3的下表面直接接触,半导体基板1的表面侧和背面侧导通。通路孔2的侧壁2a和金属膜4直接接触而构成界面A。在从与半导体基板1的背面垂直的方向观察到的俯视图中,在通路孔2的整个外周设置有通路孔2的侧壁2a和金属膜4之间的界面A。
在半导体基板1的背面,在金属膜4设置有开口5。在从与半导体基板1的背面垂直的方向观察到的俯视图中,开口5仅与通路孔2的外周的一部分接触。在开口5露出通路孔2的侧壁2a和金属膜4之间的界面A。此外,如果开口5与通路孔2的整个外周都接触,则半导体基板1的背面的金属膜4和通路孔2的侧壁2a的金属膜4分离,半导体基板1的表面侧和背面侧变得不导通。
下面,对本实施方式的半导体装置的制造方法进行说明。首先,在半导体基板1的表面形成电极3。然后,对半导体基板1的背面侧进行磨削直至成为规定的厚度。然后,通过抗蚀剂等,对背面的除设为通路孔2的部位以外进行掩盖,对半导体基板1进行蚀刻直至电极3从背面侧露出。在对掩模进行去除、清洗后,在半导体基板1的背面侧整个面即基板背面、通路孔2的侧壁2a以及电极3的下表面形成金属膜4。然后,在将切割线(dicing line)处的金属膜4去除时,除设为开口5的部位和切割线以外,由光致抗蚀剂将背面覆盖。通过在该状态下利用对金属膜4进行蚀刻而不对半导体基板1进行蚀刻的液体进行处理,从而形成开口5。
下面,与对比例进行比较而对本实施方式的效果进行说明。图3、4是表示对比例所涉及的半导体装置的剖视图。在对比例中,在金属膜4未设置开口5。在形成通路孔2后对半导体装置进行了加热时,由于从由背面侧的金属膜4覆盖的残渣产生的气体而对半导体基板1和金属膜4的界面A施加压力。该压力在界面A传递而将密接强度弱的表面侧的电极3和背面侧的金属膜4之间的界面A扩开。其结果,存在二者的连接断开而变得不能获得导通这一问题。
与此相对,在本实施方式中,从残渣产生的气体在半导体基板1和金属膜4之间的界面A传播,到达在金属膜4设置的开口5。开口5与通路孔2的外周接触,在开口5露出通路孔2的侧壁2a和金属膜4之间的界面A。因此,在界面A传播的气体释放至半导体装置之外。其结果,由于能够防止电极3和金属膜4的连接断开,因此即使在形成通路孔2后进行加热,也能够确保基板表面侧和背面侧的导通。
实施方式2
图5是表示本发明的实施方式2所涉及的半导体装置的剖视图。图6是表示本发明的实施方式2所涉及的半导体装置的仰视图。在本实施方式中,取代实施方式1的金属膜4,在半导体基板1的背面、通路孔2的侧壁2a以及电极3的下表面依次层叠有第1及第2金属膜6、7。第1金属膜6比第2金属膜7薄。背面侧的金属膜中的第2金属膜7是承担导电性的主要的层,占到背面侧的金属膜的厚度的一多半。通过无电解镀敷而形成第1金属膜6,作为通过电镀而形成第2金属膜7的情况下的供电层。不限于此,也可以形成第1金属膜6作为用于确保附着力的阻挡层。形成方法还能够应用溅射法等其他方法。
在半导体基板1的背面,在第2金属膜7设置有开口8。开口8仅与通路孔2的外周的一部分接触。本实施方式的开口8也与实施方式1同样地,是在除设为开口8的部位和切割线以外由光致抗蚀剂将背面覆盖的状态下,对金属膜4进行蚀刻而形成的。
在开口8露出通路孔2的侧壁2a之上的第1金属膜6和第2金属膜7间的界面B。此外,在与该界面B大致相同的位置还配置通路孔2的侧壁2a和第1金属膜6之间的界面A,该界面A存在于在开口8内残留的第1金属膜6的下侧。
在本实施方式中,从残渣产生的气体在半导体基板1和第1金属膜6之间的界面A传播,到达在第2金属膜7设置的开口8。开口8内由第1金属膜6覆盖,但由于第1金属膜6薄,因此气体透过第1金属膜6而释放至半导体装置之外。其结果,即使在形成通路孔2后进行加热,也能够确保基板表面侧和背面侧的导通。
另外,通过残留薄的第1金属膜6,从而不需要对主要的第2金属膜7和薄的第1金属膜6进行两次蚀刻,因此能够简化工序。并且,在通过无电解镀敷而形成金属膜的情况下,由于无电解镀敷在形成金属膜后需要进行加热处理,因此容易受到气体的影响。因此,如本实施方式所述,在第2金属膜7设置开口8的效果明显。
实施方式3
图7及图8是表示本发明的实施方式3所涉及的半导体装置的剖视图。图8是从与图7不同的方向观察到的剖面。取代实施方式1的开口5,在通路孔2的侧壁2a,在金属膜4设置有开口9。在开口9露出通路孔2的侧壁2a。
在本实施方式中,将通路孔2的侧壁2a形成为锥状,使得能够进行照相制版。在将金属膜4形成于半导体基板1的背面侧整个面后,除设为开口9的部位以外由光致抗蚀剂将背面覆盖。通过在该状态下利用对金属膜4进行蚀刻而不对半导体基板1进行蚀刻的液体进行处理,从而形成开口9。
由此,与实施方式1同样地,从残渣产生的气体在界面A传播,从开口9释放至半导体装置之外。其结果,即使在形成通路孔2后进行加热,也能够确保基板表面侧和背面侧的导通。另外,虽然开口9的形成方法变得复杂,但通过在通路孔2内设置开口9,从而与实施方式1相比,气体变得容易释放。
实施方式4
图9是表示本发明的实施方式4所涉及的半导体装置的剖视图。在本实施方式中,取代实施方式3的金属膜4,在半导体基板1的背面、通路孔2的侧壁2a以及电极3的下表面依次层叠有第1及第2金属膜6、7。第1金属膜6比第2金属膜7薄。在通路孔2的侧壁2a,在第2金属膜7设置有开口10。在开口10露出第1金属膜6。由此,能够得到与实施方式2、3相同的效果。
实施方式5
图10是表示本发明的实施方式5所涉及的半导体装置的俯视图。图11是沿图10的I-II的剖视图。取代实施方式1的开口5,在通路孔2之上,在电极3设置有开口11。在开口11露出金属膜4。
在本实施方式中,在形成通路孔2及金属膜4后,除设为开口11的部位以外由光致抗蚀剂将基板表面覆盖,将背面侧的金属膜4作为阻止层而对表面侧的电极3进行蚀刻,形成开口11。
由此,与实施方式1同样地,从残渣产生的气体在界面A传播而从开口11释放至半导体装置之外。其结果,即使在形成通路孔2后进行加热,也能够确保基板表面侧和背面侧的导通。另外,虽然开口11的形成方法变得复杂,但通过在通路孔2之上设置开口11,从而与实施方式1相比,气体变得容易释放。
实施方式6
图12是表示本发明的实施方式6所涉及的半导体装置的剖视图。取代实施方式5的电极3,在半导体基板1的表面以将通路孔2堵塞的方式依次层叠有第1及第2电极12、13。第1电极12比第2电极13薄。在通路孔2之上,在第2电极13设置有开口14。在开口14露出第1电极12。由此,能够得到与实施方式2、5相同的效果。
Claims (6)
1.一种半导体装置,其特征在于,具有:
半导体基板,其设置有从背面起贯穿至表面的通路孔;
电极,其以将所述通路孔堵塞的方式设置于所述半导体基板的所述表面;以及
金属膜,其设置于所述半导体基板的所述背面、所述通路孔的侧壁以及所述电极的下表面,
在所述半导体基板的所述背面,在所述金属膜设置开口,
所述开口仅与所述通路孔的外周的一部分接触,
在所述开口露出所述通路孔的所述侧壁和所述金属膜之间的界面。
2.一种半导体装置,其特征在于,具有:
半导体基板,其设置有从背面起贯穿至表面的通路孔;
电极,其以将所述通路孔堵塞的方式设置于所述半导体基板的所述表面;以及
第1及第2金属膜,它们依次层叠在所述半导体基板的所述背面、所述通路孔的侧壁以及所述电极的下表面,
所述第1金属膜比所述第2金属膜薄,
在所述半导体基板的所述背面,在所述第2金属膜设置开口,
所述开口仅与所述通路孔的外周的一部分接触,
在所述开口露出所述通路孔的所述侧壁之上的所述第1金属膜和所述第2金属膜之间的界面。
3.一种半导体装置,其特征在于,具有:
半导体基板,其设置有从背面起贯穿至表面的通路孔;
电极,其以将所述通路孔堵塞的方式设置于所述半导体基板的所述表面;以及
金属膜,其设置于所述半导体基板的所述背面、所述通路孔的侧壁以及所述电极的下表面,
在所述通路孔的所述侧壁,在所述金属膜设置开口,
在所述开口露出所述通路孔的所述侧壁。
4.一种半导体装置,其特征在于,具有:
半导体基板,其设置有从背面起贯穿至表面的通路孔;
电极,其以将所述通路孔堵塞的方式设置于所述半导体基板的所述表面;以及
第1及第2金属膜,它们依次层叠在所述半导体基板的所述背面、所述通路孔的侧壁以及所述电极的下表面,
所述第1金属膜比所述第2金属膜薄,
在所述通路孔的所述侧壁,在所述第2金属膜设置开口,
在所述开口露出所述第1金属膜。
5.一种半导体装置,其特征在于,具有:
半导体基板,其设置有从背面起贯穿至表面的通路孔;
电极,其以将所述通路孔堵塞的方式设置于所述半导体基板的所述表面;以及
金属膜,其设置于所述半导体基板的所述背面、所述通路孔的侧壁以及所述电极的下表面,
在所述通路孔之上,在所述电极设置开口,
在所述开口露出所述金属膜。
6.一种半导体装置,其特征在于,具有:
半导体基板,其设置有从背面起贯穿至表面的通路孔;
第1及第2电极,它们以将所述通路孔堵塞的方式依次层叠在所述半导体基板的所述表面;以及
金属膜,其设置于所述半导体基板的所述背面、所述通路孔的侧壁以及所述第1电极的下表面,
所述第1电极比所述第2电极薄,
在所述通路孔之上,在所述第2电极设置开口,
在所述开口露出所述第1电极。
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