CN1070279A - 掩膜只读存储器 - Google Patents
掩膜只读存储器 Download PDFInfo
- Publication number
- CN1070279A CN1070279A CN92109280A CN92109280A CN1070279A CN 1070279 A CN1070279 A CN 1070279A CN 92109280 A CN92109280 A CN 92109280A CN 92109280 A CN92109280 A CN 92109280A CN 1070279 A CN1070279 A CN 1070279A
- Authority
- CN
- China
- Prior art keywords
- diffusion region
- word line
- bit line
- mask rom
- isolated area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910015427A KR940004609B1 (ko) | 1991-09-04 | 1991-09-04 | 마스크 리드 온리 메모리 |
KR15427/91 | 1991-09-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1070279A true CN1070279A (zh) | 1993-03-24 |
Family
ID=19319567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN92109280A Pending CN1070279A (zh) | 1991-09-04 | 1992-08-10 | 掩膜只读存储器 |
Country Status (7)
Country | Link |
---|---|
KR (1) | KR940004609B1 (fr) |
CN (1) | CN1070279A (fr) |
DE (1) | DE4226421A1 (fr) |
FR (1) | FR2680908A1 (fr) |
GB (1) | GB2259405A (fr) |
IT (1) | IT1261716B (fr) |
TW (1) | TW222341B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100343920C (zh) * | 2004-07-14 | 2007-10-17 | 义隆电子股份有限公司 | 适用字符线金属导线技术的平面单元只读存储器 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2683078A1 (fr) * | 1991-10-29 | 1993-04-30 | Samsung Electronics Co Ltd | Memoire morte a masque de type non-et. |
KR100446603B1 (ko) * | 1997-12-12 | 2004-11-03 | 삼성전자주식회사 | 강유전성액정화합물,이를포함한액정조성물및이를채용한액정표시소자 |
DE10254155B4 (de) | 2002-11-20 | 2010-12-09 | Infineon Technologies Ag | Maskenprogrammierbares ROM-Bauelement |
US7953595B2 (en) | 2006-10-18 | 2011-05-31 | Polycom, Inc. | Dual-transform coding of audio signals |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56156993A (en) * | 1980-05-08 | 1981-12-03 | Fujitsu Ltd | Read only memory |
GB2102623B (en) * | 1981-06-30 | 1985-04-11 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductors memory device |
JPS6329579A (ja) * | 1986-07-23 | 1988-02-08 | Hitachi Ltd | 縦型rom |
IT1217403B (it) * | 1988-04-12 | 1990-03-22 | Sgs Thomson Microelectronics | Matrice di memoria a tovaglia con celle eprom sfalsate |
-
1991
- 1991-09-04 KR KR1019910015427A patent/KR940004609B1/ko not_active IP Right Cessation
-
1992
- 1992-07-31 FR FR9209528A patent/FR2680908A1/fr active Pending
- 1992-08-07 GB GB9216801A patent/GB2259405A/en not_active Withdrawn
- 1992-08-07 IT ITMI921962A patent/IT1261716B/it active IP Right Grant
- 1992-08-08 TW TW081106279A patent/TW222341B/zh active
- 1992-08-10 CN CN92109280A patent/CN1070279A/zh active Pending
- 1992-08-10 DE DE4226421A patent/DE4226421A1/de active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100343920C (zh) * | 2004-07-14 | 2007-10-17 | 义隆电子股份有限公司 | 适用字符线金属导线技术的平面单元只读存储器 |
Also Published As
Publication number | Publication date |
---|---|
ITMI921962A1 (it) | 1993-03-05 |
KR930006951A (ko) | 1993-04-22 |
DE4226421A1 (de) | 1993-03-18 |
GB2259405A (en) | 1993-03-10 |
FR2680908A1 (fr) | 1993-03-05 |
GB9216801D0 (en) | 1992-09-23 |
ITMI921962A0 (it) | 1992-08-07 |
TW222341B (fr) | 1994-04-11 |
IT1261716B (it) | 1996-05-30 |
KR940004609B1 (ko) | 1994-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C01 | Deemed withdrawal of patent application (patent law 1993) | ||
WD01 | Invention patent application deemed withdrawn after publication |