JPS6411361A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS6411361A
JPS6411361A JP62166905A JP16690587A JPS6411361A JP S6411361 A JPS6411361 A JP S6411361A JP 62166905 A JP62166905 A JP 62166905A JP 16690587 A JP16690587 A JP 16690587A JP S6411361 A JPS6411361 A JP S6411361A
Authority
JP
Japan
Prior art keywords
cell
contacts
word line
semiconductor memory
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62166905A
Other languages
Japanese (ja)
Inventor
Shizuo Sawada
Masaki Ogiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP62166905A priority Critical patent/JPS6411361A/en
Publication of JPS6411361A publication Critical patent/JPS6411361A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To prevent a drop in a yield rate at a process to form a contact by a method wherein contacts of bit lines for a first cell and a second cell are arranged at a dynamic-type semiconductor memory composed of a cell having one transistor, one capacitor and one contact per cell and a word line for a third cell is arranged between these contacts. CONSTITUTION:Contacts 1101, 1102 of bit lines for a first cell and a second cell which are adjacent to each other in a direction perpendicular to a direction extended from a word line 107 are arranged in said direction; a word line 1073 for a third cell is arranged between these contacts. The contacts 1101, 1102 of the first bit line and the second bit line are formed inside identical opening patterns 115 of a resist; the two contacts 1101, 1102 for two cells C1, C2 can be formed by contact holes 115 of the resist 116; accordingly, it is possible to prevent a drop in a yield rate, the contact holes being made small and the number of contacts increased.
JP62166905A 1987-07-06 1987-07-06 Semiconductor memory Pending JPS6411361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166905A JPS6411361A (en) 1987-07-06 1987-07-06 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166905A JPS6411361A (en) 1987-07-06 1987-07-06 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS6411361A true JPS6411361A (en) 1989-01-13

Family

ID=15839810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166905A Pending JPS6411361A (en) 1987-07-06 1987-07-06 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS6411361A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6413257U (en) * 1987-07-14 1989-01-24
JPH04327303A (en) * 1991-04-25 1992-11-16 Dowa Mining Co Ltd Method for rolling bar stock with special shaped section

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6413257U (en) * 1987-07-14 1989-01-24
JPH04327303A (en) * 1991-04-25 1992-11-16 Dowa Mining Co Ltd Method for rolling bar stock with special shaped section

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