CN107026107B - 电子部件的制造装置及制造方法以及电子部件 - Google Patents

电子部件的制造装置及制造方法以及电子部件 Download PDF

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CN107026107B
CN107026107B CN201710058162.4A CN201710058162A CN107026107B CN 107026107 B CN107026107 B CN 107026107B CN 201710058162 A CN201710058162 A CN 201710058162A CN 107026107 B CN107026107 B CN 107026107B
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porous metal
resin
chip
substrate
component
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CN107026107A (zh
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竹内慎
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Towa Corp
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Towa Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H01L2924/16153—Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CN201710058162.4A 2016-02-02 2017-01-23 电子部件的制造装置及制造方法以及电子部件 Active CN107026107B (zh)

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Application Number Priority Date Filing Date Title
JP2016017681A JP6639931B2 (ja) 2016-02-02 2016-02-02 電子部品の製造装置及び製造方法並びに電子部品
JP2016-017681 2016-02-02

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CN107026107A CN107026107A (zh) 2017-08-08
CN107026107B true CN107026107B (zh) 2020-08-18

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JP (1) JP6639931B2 (enExample)
KR (1) KR101920972B1 (enExample)
CN (1) CN107026107B (enExample)
TW (1) TW201806097A (enExample)

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Publication number Priority date Publication date Assignee Title
CN208093541U (zh) * 2017-12-05 2018-11-13 合肥矽迈微电子科技有限公司 封装体
JP2019165173A (ja) * 2018-03-20 2019-09-26 株式会社東芝 半導体装置および半導体装置の製造方法
CN109326527B (zh) * 2018-09-27 2020-10-13 泉州智慧果技术服务有限公司 一种功率元件封装模块及其制备方法
US11037883B2 (en) 2018-11-16 2021-06-15 Analog Devices International Unlimited Company Regulator circuit package techniques
KR102711765B1 (ko) * 2019-03-06 2024-09-27 삼성전기주식회사 전자 소자 모듈 및 그 제조 방법
WO2020188806A1 (ja) * 2019-03-20 2020-09-24 三菱電機株式会社 半導体装置
CN217334057U (zh) 2019-04-15 2022-08-30 株式会社村田制作所 电子元件模块
KR102345062B1 (ko) * 2019-11-20 2021-12-30 (주)에이티세미콘 반도체 패키지 및 그 제조 방법
JPWO2021177093A1 (enExample) * 2020-03-06 2021-09-10
CN111834238A (zh) * 2020-08-10 2020-10-27 李元雄 一种采用凸块与倒装的大功率半导体器件封装方法
CN111952206B (zh) * 2020-08-14 2022-09-13 深圳市天成照明有限公司 一种电子元器件生产用封装装置
JP7428384B2 (ja) * 2020-10-06 2024-02-06 アピックヤマダ株式会社 樹脂封止装置及び樹脂封止方法
WO2022158474A1 (ja) * 2021-01-19 2022-07-28 ベジ 佐々木 電子装置及び製品
CN113299566B (zh) * 2021-05-20 2023-01-24 合肥速芯微电子有限责任公司 封装结构及其制备方法
CN114496808B (zh) * 2022-01-25 2024-03-12 河北博威集成电路有限公司 倒装式塑封的装配方法、屏蔽系统、散热系统及应用
JP2023109602A (ja) * 2022-01-27 2023-08-08 アピックヤマダ株式会社 樹脂封止装置及び樹脂封止方法
CN114823370B (zh) * 2022-05-10 2022-10-14 山东汉旗科技有限公司 指纹识别芯片封装结构及其封装的方法
TWI844243B (zh) * 2023-01-18 2024-06-01 宏碁股份有限公司 電子封裝結構
TWI864819B (zh) * 2023-06-13 2024-12-01 南茂科技股份有限公司 薄膜覆晶封裝結構
CN117457618B (zh) * 2023-12-25 2024-04-09 长电集成电路(绍兴)有限公司 芯片封装结构及芯片封装方法

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JP2002158316A (ja) * 2000-11-16 2002-05-31 Towa Corp 半導体装置及びその製造方法
CN101587887A (zh) * 2008-05-23 2009-11-25 富准精密工业(深圳)有限公司 发光二极管结构
CN105280507A (zh) * 2014-07-18 2016-01-27 东和株式会社 电子部件、带突起电极的板状构件、及其制造方法
CN105269744A (zh) * 2014-06-09 2016-01-27 东和株式会社 树脂封装装置及树脂封装方法

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JP4253992B2 (ja) * 2000-03-16 2009-04-15 株式会社デンソー 樹脂封止型半導体装置
JP5740995B2 (ja) * 2011-01-17 2015-07-01 富士通株式会社 半導体装置及びその製造方法
JP6169516B2 (ja) * 2014-03-31 2017-07-26 Ｔｏｗａ株式会社 樹脂成形装置及び樹脂成形方法
JP6017492B2 (ja) * 2014-04-24 2016-11-02 Ｔｏｗａ株式会社 樹脂封止電子部品の製造方法、突起電極付き板状部材、及び樹脂封止電子部品

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2002158316A (ja) * 2000-11-16 2002-05-31 Towa Corp 半導体装置及びその製造方法
CN101587887A (zh) * 2008-05-23 2009-11-25 富准精密工业(深圳)有限公司 发光二极管结构
CN105269744A (zh) * 2014-06-09 2016-01-27 东和株式会社 树脂封装装置及树脂封装方法
CN105280507A (zh) * 2014-07-18 2016-01-27 东和株式会社 电子部件、带突起电极的板状构件、及其制造方法

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JP6639931B2 (ja) 2020-02-05
JP2017139278A (ja) 2017-08-10
TW201806097A (zh) 2018-02-16
KR20170092096A (ko) 2017-08-10
CN107026107A (zh) 2017-08-08
KR101920972B1 (ko) 2018-11-21

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