JP7162725B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7162725B2 JP7162725B2 JP2021506103A JP2021506103A JP7162725B2 JP 7162725 B2 JP7162725 B2 JP 7162725B2 JP 2021506103 A JP2021506103 A JP 2021506103A JP 2021506103 A JP2021506103 A JP 2021506103A JP 7162725 B2 JP7162725 B2 JP 7162725B2
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Description
(1)半導体チップを駆動してもモールド樹脂が半導体チップに焼き付かない。
(2)半導体デバイス全体の熱抵抗を小さくすることができ、高周波特性あるいは長期信頼性の目標性能の達成が容易となる。
基板と、
前記基板の表面に配置された半導体チップと、
前記基板の表面に接合され、前記半導体チップを覆うリッドと、
前記基板の表面全体に形成され、前記リッドの表面を露出させるように当該リッドの周囲を囲んで設けられたモールド樹脂と、
を備え、
前記基板の厚さ方向において、前記モールド樹脂の表面の高さは、前記リッドの表面の高さよりも低く、
前記リッドは、出入り口が塞がれたトンネル構造を有し、
前記トンネル構造が前記半導体チップを気密封止していることを特徴とするものである。
以下、実施の形態1の半導体装置について説明する。
図1はこの半導体装置の全体像を示した平面図(但し、Cuリッド、モールド樹脂は除く)、図2は、図1の半導体装置のうち、半導体チップとその近傍について拡大して示した、図1の縦方向の断面図、図3は、図1の半導体装置のうち、半導体チップとその近傍を拡大して示した平面図(但し、Cuリッド、モールド樹脂は除く)である。なお、以降においては、図1の横方向をx方向、縦方向をy方向、xy面に垂直な方向(プリント基板の厚さ方向)をz方向と呼ぶ。
一方で、Cuリッド側には、Cuリッド固定用の焼結銀を経由して、Cuリッドの天面側に伝熱していく。
(1)Cuコアを有するプリント基板に焼結銀を塗布した後に、半導体チップ、サブマウント、Cuリッドをセットし、焼結銀の熱硬化温度(200℃前後)まで加熱し、焼結銀を熱硬化させる。一旦熱硬化した焼結銀の融点は数100℃になる。
(2)Auワイヤをワイヤボンディングする。
(3)チップインダクタ5a、チップ抵抗5b、チップコンデンサ5cなどのSMD部品5をはんだで実装する。
(4)プリント基板の表面全体に、モールド樹脂をトランスファー成形する。
(5)モールド天面を研磨装置で削り、Cuリッドの天面を露出させる。
なお、上記実施の形態1では、Cuリッドの形状は入力ワイヤおよび出力ワイヤとの接触を避けるため、トンネル構造を有するものを示したが、図5のようにトンネル構造の出入り口を塞ぐ壁(先に図2、図4に示した開放部分である一点鎖線の枠線の内部、あるいは、図3に示した開放部分である2箇所の一点鎖線部分を埋める壁)を設けてもよい。この際、入力ワイヤおよび出力ワイヤを外部へ取り出すため中継している中継パターン13dの直下にはビアホールである上部フィルドビア12aを設ける。上述のように直下に設ける理由は、半導体チップの入出力間の電気的距離を短くするため、ワイヤ等の追加の必要性をなくすためである。
(1)半導体チップの高温動作時、モールド樹脂がチップに焼き付くのを防ぐことにより、半導体チップが故障なく動作できる際の活性層温度を高くすることを可能にする。
(2)半導体チップのソース、ゲート等の電極構造の隙間にモールド樹脂が入り込まなくなるため、寄生容量が発生しなくなり、高周波特性の劣化を防止できる。
(3)半導体チップがCuリッドとCuコアで密閉され、モールド樹脂からチップへの水分侵入を防止することにより、製品の耐湿性が向上する。
(4)Cuリッドの屋根部の断面積が広がり、上記の項目(1)の内容に加え、モールド天面側の熱抵抗が低減できる。
(5)半導体チップからの電磁界漏洩を防ぐことができる。
実施の形態2においては、グランド電極面を高さの基準としたときにモールド樹脂の天面とCuリッドの天面の高さは一致させていたが、モールド樹脂成型時にモールドの高さをCuリッドの高さより低くし、Cuリッド上部を露出させた構造としてもよい。
実施の形態2においては、半導体チップの個数を1個としていたが、複数の半導体チップを実装する場合は、Cuリッドのトンネル構造を複数個備える構造としてもよい。例えば、半導体チップの個数が2個なら、2個のトンネル構造を有するものとすることができる。
実施の形態5の半導体装置は、複数の半導体チップを実装する場合において、Cuリッドのトンネル構造同士が空間的に完全に分離されたものとなっており、このような構造が複数備えられている。この場合、半導体チップが2個ある場合であれば、2個のトンネル構造を有していることは実施の形態4と同じであるが、Cuリッドと1層目のCu配線の接触領域の形状が異なる。
実施の形態6の半導体装置は、実施の形態1~5での半導体装置の構造は維持したままで、Cuリッドの材質のみをCuから人工ダイヤモンドに置き換えたものである。
従って、例示されていない無数の変形例が、本願に開示される技術の範囲内において想定される。例えば、少なくとも1つの構成要素を変形する場合、追加する場合または省略する場合、さらには少なくとも1つの構成要素を抽出し、他の実施の形態の構成要素と組み合わせる場合が含まれるものとする。
具体的には、例えば、リッドの材質としてCu、および人工ダイヤモンドの場合について説明したが、これらに限らず、Agを用いても同等の効果を期待できるものである。
Claims (7)
- 基板と、
前記基板の表面に配置された半導体チップと、
前記基板の表面に接合され、前記半導体チップを覆うリッドと、
前記基板の表面全体に形成され、前記リッドの表面を露出させるように当該リッドの周囲を囲んで設けられたモールド樹脂と、
を備え、
前記基板の厚さ方向において、前記モールド樹脂の表面の高さは、前記リッドの表面の高さよりも低く、
前記リッドは、出入り口が塞がれたトンネル構造を有し、
前記トンネル構造が前記半導体チップを気密封止していることを特徴とする半導体装置。 - 一表面を前記基板の表面側に露出させて、前記基板の内部に埋め込まれたコアをさらに備え、
前記基板は、裏面にグランド電極が設けられ、複数の層状に形成された樹脂層を含んでおり、
前記半導体チップは、前記樹脂層のうち前記コアと前記グランド電極との間に配置された特定の樹脂層を貫通して設けられ、前記コアの裏面と前記グランド電極とを電気的に接続するフィルドビアと、前記コアの表面に対向して配置されるとともに、
前記リッドは、高熱伝導率で、前記コアの表面に焼結銀を含む接合材により接合されていることを特徴とする請求項1に記載の半導体装置。 - 前記基板の表面上の、前記半導体チップの周辺に配置された周辺パターンと、
前記基板の表面に配置され、前記半導体チップと前記周辺パターンを接続するワイヤと、を備えていることを特徴とする請求項2に記載の半導体装置。 - 前記周辺パターンは、前記半導体チップに接続された前記ワイヤを信号電極に中継するための上部フィルドビアを直下に配置した中継パターンであり、
前記ワイヤから入力および出力される電気信号は、前記上部フィルドビアを経由して前記基板の表面から2層目以上の層から前記リッドの外に取り出し可能となっていることを特徴とする請求項3に記載の半導体装置。 - 前記基板は、複数の前記半導体チップを有し、
前記周辺パターンは、前記半導体チップの数に比例して、前記半導体チップに接続された前記ワイヤを信号電極に中継するための上部フィルドビアの真上に配置された中継パターンを有していることを特徴とする請求項3に記載の半導体装置。 - 基板と、
前記基板の表面に配置された半導体チップと、
前記基板の表面に接合され、前記半導体チップを覆うリッドと、
前記基板の表面全体に形成され、前記リッドの表面を露出させるように当該リッドの周囲を囲んで設けられたモールド樹脂と、
前記基板の厚さ方向において、前記モールド樹脂の表面の高さは、前記リッドの表面の高さよりも低く、一表面を前記基板の表面側に露出させて、前記基板の内部に埋め込まれたコアと、
を備え、
前記基板は、複数の前記半導体チップを有し、裏面にグランド電極が設けられ、複数の層状に形成された樹脂層を含むとともに、
前記基板の表面上の、前記半導体チップの周辺に配置された周辺パターンと、
前記基板の表面に配置され、前記半導体チップと前記周辺パターンを接続するワイヤと、をさらに備え、
前記半導体チップは、前記樹脂層のうち前記コアと前記グランド電極との間に配置された特定の樹脂層を貫通して設けられるとともに、前記コアの裏面と前記グランド電極とを電気的に接続するフィルドビアと、前記コアの表面に対向して配置されており、
前記周辺パターンは、前記半導体チップの数に比例して、前記半導体チップに接続された前記ワイヤを信号電極に中継するための上部フィルドビアの真上に配置された中継パターンを有しており、
前記リッドは、前記基板の表面上で、複数の、前記半導体チップ、前記ワイヤ、および前記中継パターンを組合せた組合せ構成体を、互いに分離して密閉する密閉構造を備えるとともに、前記半導体チップの数だけ、前記ワイヤを非接触に配線する開放穴が形成されたトンネル構造を有し、高熱伝導率で、前記コアの表面に焼結銀を含む接合材により接合されている、
ことを特徴とする半導体装置。 - 前記半導体チップを覆う前記リッドの材質は、人工ダイヤモンドであることを特徴とする請求項1から6のいずれか1項に記載の半導体装置。
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