CN101587887A - 发光二极管结构 - Google Patents

发光二极管结构 Download PDF

Info

Publication number
CN101587887A
CN101587887A CNA2008100674174A CN200810067417A CN101587887A CN 101587887 A CN101587887 A CN 101587887A CN A2008100674174 A CNA2008100674174 A CN A2008100674174A CN 200810067417 A CN200810067417 A CN 200810067417A CN 101587887 A CN101587887 A CN 101587887A
Authority
CN
China
Prior art keywords
emitting diode
pedestal
light
light emitting
heating panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008100674174A
Other languages
English (en)
Inventor
魏百盛
张家寿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
Original Assignee
Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hong Jun Precision Industry Co ltd, Fuzhun Precision Industry Shenzhen Co Ltd filed Critical Hong Jun Precision Industry Co ltd
Priority to CNA2008100674174A priority Critical patent/CN101587887A/zh
Priority to US12/202,399 priority patent/US20090290362A1/en
Publication of CN101587887A publication Critical patent/CN101587887A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/89—Metals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管结构，包括一基座、安装于基座上的至少一发光二极管芯片及保护该至少一发光二极管芯片的封装体，该基座的下方贴设有一散热板，该散热板为内部形成有大量孔隙的多孔性结构。该发光二极管结构中，由于散热板的内部形成有大量的孔隙，可大大增加该散热板与空气的接触面积，减小热阻，并提高热对流性能，所述发光二极管芯片所产生的热量经由基座吸收并传递至该散热板后，可通过该散热板迅速散发。

Description

发光二极管结构
技术领域
本发明涉及一种发光二极管结构。
背景技术
发光二极管(Light Emitting Diode)是利用半导体材料中的电子与空穴结合时能量带位阶的改变，以发光的形式释放出能量。由于发光二极管具有体积小、寿命长、驱动电压低、反映速度快、耐震性佳等优点，已被广泛地应用在广告板、交通标志、日常照明等各种领域中。
图1所示为一种典型的发光二极管结构20，包括基座22，位于该基座22上的若干发光二极管芯片21及包围该发光二极管芯片21外围的封胶体24。发光二极管芯片21通过导线25与基座22上的导电组件(图未示)电连接。该基座22为下表面为平面的金属板，发光二极管芯片21所产生的热量首先通过基座22散发。
然而，通常发光二极管发光时，其所消耗的能量仅大约10～20％被转换成光能，而其余的能量被转换成热量，这些热量必须及时疏散掉以保证发光二极管的正常工作。该发光二极管结构中，基座22与空气的接触面积小，其散热效果不佳，进而影响发光二极管的发光效率与寿命。
发明内容
有鉴于此，有必要提供一种具有较好散热性能的发光二极管结构。
一种发光二极管结构，包括一基座、安装于基座上的至少一发光二极管芯片及保护该至少一发光二极管芯片的封装体，该基座的下方贴设有一散热板，该散热板为内部形成有大量孔隙的多孔性结构。
该发光二极管结构中，由于散热板的内部形成有大量的孔隙，可大大增加该散热板与空气的接触面积，减小热阻，并提高热对流性能，所述发光二极管芯片所产生的热量经由基座吸收并传递至该散热板后，可通过该散热板迅速散发，或者经由该散热板将热量进一步迅速有效地传递至一外部散热器对外散发。
附图说明
图1为一种典型的发光二极管结构的示意图。
图2为本发明一较佳实施例中发光二极管结构的示意图。
具体实施方式
下面参照附图，结合具体实施例对本发明作进一步的描述。
图2所示为本发明一实施例中发光二极管结构的示意图。该发光二极管结构30包括一基座321、位于该基座321上的若干发光二极管芯片31、分别将该发光二极管芯片31固定在该基座321上的封装体34及位于基座下方的一散热板323。
该基座321的上表面向下凹陷形成若干碗状的封装腔33。每一封装腔33具有一水平的底面331及从底面331斜向上向外倾斜的侧面332。该发光二极管芯片31一一对应地设于该封装腔33内的底面331上，并通过导线35与基座321上的导电组件(图未示)电性连接，以便使发光二极管芯片31可以与外部电路电性连接。该基座321的下表面向内凹陷形成若干相互间隔的凹穴36。该凹穴26呈碗状，其横截面的形状与所述封装腔33的横截面形状大致相同。所述凹穴36使得该基座321的下表面形成为起伏面，且表面积增加。该基座321的材料为金属，且凹穴36与封装腔33相对设置，在基座321的高度方向上相互对齐，即每一凹穴36对应地形成于所述封装腔33的正下方。该基座321可以通过冲压、锻造、压铸或者射出等成型制造工艺加工成型。本实施例中，该基座321的材料为铝。
该散热板323贴设于基座321的下方，散热板323的上表面向上形成若干凸起37。每一凸起37的形状与大小分别与基座321下表面上的凹穴36的形状与大小相对应，从而可分别对应地收容于该凹穴36内。该散热板323为内部形成大量孔隙的多孔性结构。本实施例中，该散热板323未形成凸起的部分的厚度大致为2mm(毫米)，该散热板323为由热传导系数较高的材料如铜、铝等制成的发泡金属，或者为由金属粉末通过烧结制成的多孔性结构。由于散热板323的内部形成有大量孔隙，可大大增加其与空气的接触面积，减小热阻，提高热对流性能。
具体实施时，由于基座321的材料为铝，该散热板323还可以为形成于该铝板下表面的多孔性散热层，即通过阳极氧化(anodic oxidation)处理在基座321的下表面上形成的阳极氧化膜，又称电化学氧化膜。该氧化膜包括靠近基座321的一层致密且薄的纯氧化铝膜以及位于该纯氧化铝膜外层的由带结晶水的氧化铝形成的多孔氧化膜层。所述氧化膜层的内部亦形成大量的孔隙，其与空气具有较大的接触面积，热阻较小，热对流性能高。该氧化膜层的厚度较小，大致为60～200μm(微米)，可于该氧化膜层的下方设置一散热器(图未示)，通过该氧化膜层将热量迅速有效地传递至该散热器以辅助对外散热。
该封装体34将该发光二极管芯片31包覆在基座321的封装腔33的内部，可防止该发光二极管芯片31受到外力冲击等损坏。该封装体34的材料可以为环氧树脂、硅胶、聚酰亚胺、或压克力等。
工作时，发光二极管芯片31产生热量并将热量首先传递至下方的基座321，由于基座321与散热板323之间通过凸起37与凹穴36相互配合，热接触面积增加；又由于该散热板323的内部形成大量孔隙，热阻减小且热对流性能增加，热量从基座321迅速传递至下方的散热板323，利用该散热板323的较大散热面积迅速对外散发，可有效提升热对流散热效果。

Claims (10)

1.一种发光二极管结构，包括一基座、安装于基座上的至少一发光二极管芯片及保护该至少一发光二极管芯片的封装体，其特征在于：该基座的下方贴设有一散热板，该散热板为内部形成有大量孔隙的多孔性结构。
2.如权利要求1所述的发光二极管结构，其特征在于：该基座的下表面形成至少一凹穴，该散热板的上表面形成至少一凸起，所述至少一凸起对应地收容于基座的至少一凹穴内。
3.如权利要求2所述的发光二极管结构，其特征在于：该基座的上表面向下凹陷形成至少一封装腔，所述至少一发光二极管芯片对应地收容于所述至少一封装腔内。
4.如权利要求3所述的发光二极管结构，其特征在于：所述至少一凹穴与所述至少一封装腔在基座的高度上相互对齐设置。
5.如权利要求1所述的发光二极管结构，其特征在于：该基座的下表面形成若干凹穴，该散热板的上表面形成若干凸起，所述凸起对应地收容于基座的凹穴内。
6.如权利要求5所述的发光二极管结构，其特征在于：该基座的上表面向下凹陷形成若干封装腔，所述发光二极管芯片对应地收容于所述封装腔内。
7.如权利要求6所述的发光二极管结构，其特征在于：所述凹穴与所述封装腔在基座的高度上相互对齐设置。
8.如权利要求1至权利要求7中任意一项所述的发光二极管结构，其特征在于：该散热板为发泡金属。
9.如权利要求1至权利要求7中任意一项所述的发光二极管结构，其特征在于：该散热板由金属粉末烧结而成。
10.如权利要求1至权利要求7中任意一项所述的发光二极管结构，其特征在于：该基座的材料为铝，该散热板为经过阳极氧化处理而形成于该基座下表面上的多孔氧化膜层。
CNA2008100674174A 2008-05-23 2008-05-23 发光二极管结构 Pending CN101587887A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2008100674174A CN101587887A (zh) 2008-05-23 2008-05-23 发光二极管结构
US12/202,399 US20090290362A1 (en) 2008-05-23 2008-09-01 Light emitting diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2008100674174A CN101587887A (zh) 2008-05-23 2008-05-23 发光二极管结构

Publications (1)

Publication Number Publication Date
CN101587887A true CN101587887A (zh) 2009-11-25

Family

ID=41341989

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008100674174A Pending CN101587887A (zh) 2008-05-23 2008-05-23 发光二极管结构

Country Status (2)

Country Link
US (1) US20090290362A1 (zh)
CN (1) CN101587887A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102142407A (zh) * 2010-11-04 2011-08-03 聚信科技有限公司 一种导热垫
CN107026107A (zh) * 2016-02-02 2017-08-08 东和株式会社 电子部件的制造装置及制造方法以及电子部件

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803183B2 (en) 2010-10-13 2014-08-12 Ho Cheng Industrial Co., Ltd. LED heat-conducting substrate and its thermal module
CN103378260A (zh) * 2012-04-24 2013-10-30 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
KR102609354B1 (ko) * 2018-08-07 2023-12-05 삼성전자주식회사 디스플레이 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0471552B1 (en) * 1990-08-14 1997-07-02 Texas Instruments Incorporated Heat transfer module for ultra high density and silicon on silicon packaging applications
US5986885A (en) * 1997-04-08 1999-11-16 Integrated Device Technology, Inc. Semiconductor package with internal heatsink and assembly method
EP1603170B1 (en) * 2003-03-10 2018-08-01 Toyoda Gosei Co., Ltd. Method for manufacturing a solid-state optical element device
US20080217633A1 (en) * 2007-03-01 2008-09-11 Wu Yin Chang Light emitting diode structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102142407A (zh) * 2010-11-04 2011-08-03 聚信科技有限公司 一种导热垫
CN102142407B (zh) * 2010-11-04 2014-02-19 华为机器有限公司 一种导热垫
CN107026107A (zh) * 2016-02-02 2017-08-08 东和株式会社 电子部件的制造装置及制造方法以及电子部件
CN107026107B (zh) * 2016-02-02 2020-08-18 东和株式会社 电子部件的制造装置及制造方法以及电子部件

Also Published As

Publication number Publication date
US20090290362A1 (en) 2009-11-26

Similar Documents

Publication Publication Date Title
CN105742252B (zh) 一种功率模块及其制造方法
US20050199900A1 (en) Light-emitting device with high heat-dissipating efficiency
US8546827B2 (en) Semiconductor light emitting device
US20080180014A1 (en) LED heat sink
US20120094442A1 (en) Method of making a semiconductor chip assembly with a bump/base/ledge heat spreader, dual adhesives and a cavity in the bump
CN101645478A (zh) 发光二极管散热结构
US20100044741A1 (en) Lighting device
CN103117275A (zh) 一种芯片封装结构及芯片封装方法
US20090323346A1 (en) Light emitting diode structure
CN101752354A (zh) 一种led用封装基板结构及其制作方法
KR20150015900A (ko) Led칩 온 보드형 플렉시블 pcb 및 플렉시블 방열 패드 그리고 플렉시블 방열 패드를 이용하는 led 방열구조
CN101587887A (zh) 发光二极管结构
EP3078063B1 (en) Mounting assembly and lighting device
US20100301359A1 (en) Light Emitting Diode Package Structure
US20110003437A1 (en) Method of making a semiconductor chip assembly with a post/base/flange heat spreader and a cavity in the flange
CN109196637B (zh) 半导体装置
JP2012231061A (ja) 電子部品モジュール及び電子部品モジュールの製造方法
WO2011083703A1 (ja) Ｌｅｄモジュール装置及びその製造方法
CN211959657U (zh) 一种易散热的cem-3覆铜板
CN210432020U (zh) 双层直通散热铜基板结构
US20170018681A1 (en) Composite substrate for light emitting device and led module with the same
JP4459031B2 (ja) 電子部品収納用パッケージおよび電子装置
CN215323090U (zh) 平衡车的车体和平衡车
JP2004296726A (ja) 放熱部材および半導体素子収納用パッケージおよび半導体装置
CN215183904U (zh) 一种功率模块单元及功率模块组合单元

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20091125