CN101645478A - 发光二极管散热结构 - Google Patents
发光二极管散热结构 Download PDFInfo
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Abstract
本发明涉及一种发光二极管散热结构,其包括一个基板、一个发光二极管芯片、一电路板及一散热器。所述发光二极管芯片设置于所述基板上。所述基板设置在所述电路板上并与所述电路板电连接。所述电路板通过一导热层与所述散热器相连接。所述电路板对应所述基板所处的位置开设有多个导热通孔。所述导热通孔内设置有导热材料。本发明所提供的发光二极管散热结构通过在电路板上对应于所述基板所在位置处开设内部容置有导热材料的导热通孔,将发光二极管芯片所发出的热量更快地传导至散热器上,提高整个发光二极管散热结构的散热效率。
Description
技术领域
本发明涉及一种发光二极管散热结构。
背景技术
发光二极管(Light Emitting Diode,LED)是一种固态半导体发光元件,其利用PN结(PN junction)内形成的两种载流子,即带负电的电子与带正电的空穴相互结合并释放光子而发光工作。发光二极管具有发光效率高、体积小、寿命长、污染低等特性,于照明、背光及显示等领域具有广阔的应用前景。发光二极管的研究可参阅Rong-Ting Huang等人在1998年IEEE Transactions on Electron Devices上发表的论文Design and fabrication ofAlGaInP LED array with integrated GaAs decode circuits。
因为发光二极管的功率较高,其在使用过程时所产生的热量也较多,如果无法将热量及时地散发则会影响发光二极管的正常工作,甚至会损坏发光二极管。但是,在现有的发光二极管元件的组装过程中通常都会把发光二极管封装结构直接与电路板连接,而电路板的材料多为热阻较高的热不良导体。因此,整个发光二极管元件的散热路径在电路板处受阻从而导致散热效率的低下,影响了发光二极管的正常工作。
发明内容
有鉴于此,有必要提供一种具有高散热效率的发光二极管散热结构。
一种发光二极管散热结构,其包括一基板、一发光二极管芯片、一电路板及一散热器。所述发光二极管芯片设置于所述基板上。所述基板设置在所述电路板上并与所述电路板电连接。所述电路板通过一导热层与所述散热器相连接。所述电路板在基板所处的位置开设有导热通孔。所述导热通孔内设置有导热材料。
相对于现有技术,本发明所提供的发光二极管散热结构通过在电路板上对应于所述基板所在位置处开设内部容置有导热材料的导热通孔,将发光二极管芯片所发出的热量更快地传导至散热器上,提高了整个发光二极管散热结构的散热效率。
附图说明
图1是本发明第一实施方式提供的发光二极管散热结构示意图。
图2是本发明第二实施方式提供的发光二极管散热结构示意图。
图3是本发明第三实施方式提供的发光二极管散热结构示意图。
具体实施方式
下面将结合附图对本发明实施方式作进一步的详细说明。
请参阅图1,本发明第一实施方式提供的一种发光二极管散热结构2,其包括一基板21、一发光二极管芯片22、一电路板23、一散热器24及一透明封装体25。所述发光二极管芯片22设置于所述基板21上。所述基板21设置在所述电路板23上,并与所述电路板23电连接。所述电路板23与所述散热器24相连接。所述透明封装体25将发光二极管芯片22包覆以密封并保护发光二极管芯片22。
所述基板21包括一第一表面210,及一与所述第一表面210相对设置的第二表面212。所述基板21上设置有一电极213,所述电极213由所述基板21的第一表面210的边缘经过侧面215延伸至第二表面212。所述发光二极管芯片22通过粘合方式设置在所述第一表面210上的电极213处,并通过导线214与所述电极213实现电连接。
所述基板21可优选以绝缘性良好的陶瓷材料制成。所述陶瓷材料可以为采用氧化铝(A12O3)、氧化镁(MgO)、氮化铝(AlN)、氮化硼(BN)、氧化硅(SiO2)、氧化铍(BeO)等作为材质。当然,所述基板21也可采用其它绝缘性良好的材料,如玻璃纤维等。
所述透明封装体25可为圆弧形结构,且可采用环氧树脂或硅树脂等绝缘材料制成。可以理解的是,该透明封装体25通常具有聚光作用,另外,所述透明封装体25还可将发光二极管芯片22发出的光转换成其它颜色的光出射。例如,可在透明封装体25内加入黄色荧光粉,使发光二极管芯片22发出的蓝色光经过透明封装体25后,转换为白色光出射。
所述电路板23包括一第三表面231,及一与所述第三表面231相对设置的第四表面232。所述基板21通过设置在第二表面212上的电极213电连接于所述电路板23的第三表面231上。所述电路板23对应所述第二表面212上的电极213开设有多个导热通孔230。所述导热通孔230可通过微型钻头打孔、冲压打孔或激光打孔等方法制得。所述导热通孔230在孔壁上镀有一层高导热率的金属,如:铝、锡、铜、银、金及其组合物等,以增加所述电路板23的导热效率。
所述电路板23的第四表面232通过一导热层233与所述散热器24相连接。所述导热层233的材料可为:铝、锡、铜、银、金及其组合物等高导热率的金属材料,还可为:石墨、硅胶、环氧树脂等高导热率的非金属材料。
本发明所提供的发光二极管散热结构2中,所述发光二极管芯片22所发出的热量通过设置于所述基板21上的电极213由基板21的第一表面210传输至基板21的第二表面212,再通过开设于电路板23上的导热通孔230由电路板23的第三表面231传输至电路板23的第四表面232,最后,所述热量通过电路板23与散热器24之间的导热层233传输至散热器24上,并由所述散热器24散发出去。
综上所述,在本发明所提供的发光二极管散热结构2的散热路径中,各个部件均为高导热率材料所制成。因此,所述发光二极管散热结构2具有较高的散热效率。
请参阅图2,为本发明第二实施方式提供的一种发光二极管散热结构3,其与第一实施方式提供的发光二极管散热结构2大致相同,差异在于:所述发光二极管芯片32采用覆晶(FlipChip)方式,且通过金属凸块314,如锡球等与基板31上的电极313相连接。
请参阅图3,为本发明第三实施方式提供的一种发光二极管散热结构4,其与第一实施方式提供的发光二极管散热结构2大致相同,差异在于:所述基板41对应所述发光二极管芯片42所处位置开设有一螺纹通孔(未标示)。所述螺纹通孔(未标示)内设置有一导热螺柱416。所述导热螺柱416的材料为高导热率材料,如:铝、锡、铜、银、金及其组合物,其厚度与所述基板41相同,并通过螺纹417螺接于所述螺纹通孔(未标示)内。所述电路板43对应所述基板41上的导热螺柱416开设有多个导热通孔430,所述导热通孔430内填充有高散热率材料,如:石墨、硅胶、环氧树脂等,以提高所述导热通孔430的散热效率。
在本发明所提供的第三实施方式中,所述发光二极管芯片42所散发的热量主要通过设置于基板41内的导热螺柱416传输至电路板43上,再通过电路板上的导热通孔430传输至散热器44上。因为所述导热螺柱416与所述发光二极管芯片42直接接触,且传热路径较短,所以具有较高的散热效率。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种对应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (8)
1.一种发光二极管散热结构,其包括一基板、一发光二极管芯片、一电路板及一散热器,所述发光二极管芯片设置于所述基板上,所述基板设置在所述电路板上并与所述电路板电连接,所述电路板通过一导热层与所述散热器相连接,其特征在于,所述电路板对应所述基板所处的位置范围内开设有导热通孔,所述导热通孔内设置有导热材料。
2.如权利要求1所述的发光二极管散热结构,其特征在于,所述基板上设置有一电极,所述发光二极管芯片设置在所述电极上并通过导线与电极实现电连接。
3.如权利要求1所述的发光二极管散热结构,其特征在于,所述基板对应发光二极管芯片所在的位置开设有一螺纹通孔,所述螺纹通孔内设置有一厚度与基板相同的导热螺柱,所述导热通孔设置在所述电路板并与所述基板上的导热螺柱相对应。
4.如权利要求3所述的发光二极管散热结构,其特征在于,所述导热螺柱为高导热率材料,如:铝、锡、铜、银、金及其组合物。
5.如权利要求2或3所述的发光二极管散热结构,其特征在于,所述导热材料为具有高导热率的材料。
6.如权利要求1所述的发光二极管散热结构,其特征在于,所述基板为陶瓷材料所制成。
7.如权利要求1所述的发光二极管散热结构,其特征在于,所述发光二极管芯片采用粘合方式或覆晶方式设置在所述基板上。
8.如权利要求1所述的发光二极管散热结构,其特征在于,所述导热层采用高导热率的材料制成。
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CN200810303602A CN101645478A (zh) | 2008-08-08 | 2008-08-08 | 发光二极管散热结构 |
US12/274,331 US20100033976A1 (en) | 2008-08-08 | 2008-11-19 | Heat dissipation module for light emitting diode |
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Cited By (12)
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- 2008-08-08 CN CN200810303602A patent/CN101645478A/zh active Pending
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