CN106952920B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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CN106952920B
CN106952920B CN201611236524.6A CN201611236524A CN106952920B CN 106952920 B CN106952920 B CN 106952920B CN 201611236524 A CN201611236524 A CN 201611236524A CN 106952920 B CN106952920 B CN 106952920B
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gate electrode
insulating film
region
fin
film
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CN106952920A (zh
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津田是文
山下朋弘
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs

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CN201611236524.6A 2016-01-07 2016-12-28 半导体器件及其制造方法 Active CN106952920B (zh)

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JP2016001669A JP6591291B2 (ja) 2016-01-07 2016-01-07 半導体装置およびその製造方法
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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019050314A (ja) * 2017-09-11 2019-03-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102403031B1 (ko) * 2017-10-19 2022-05-27 삼성전자주식회사 반도체 장치
CN109979943B (zh) * 2017-12-28 2022-06-21 联华电子股份有限公司 半导体元件及其制造方法
TWI658585B (zh) * 2018-03-30 2019-05-01 世界先進積體電路股份有限公司 半導體結構及其製造方法
JP6998267B2 (ja) * 2018-05-08 2022-01-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7038607B2 (ja) * 2018-06-08 2022-03-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102019116911B4 (de) 2018-09-27 2024-05-29 Taiwan Semiconductor Manufacturing Co. Ltd. Metall-gate-strukturen für feldeffekttransistoren
US10797151B2 (en) * 2018-09-27 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structures for field effect transistors
US11158533B2 (en) 2018-11-07 2021-10-26 Vanguard International Semiconductor Corporation Semiconductor structures and fabrication method thereof
KR102582074B1 (ko) * 2018-12-28 2023-09-21 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11158648B2 (en) * 2019-03-14 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Double channel memory device
US10903366B1 (en) * 2019-09-17 2021-01-26 Taiwan Semiconductor Manufacturing Co., Ltd. Forming fin-FET semiconductor structures
JP2021082656A (ja) * 2019-11-15 2021-05-27 ルネサスエレクトロニクス株式会社 半導体装置
US11114451B1 (en) * 2020-02-27 2021-09-07 Silicon Storage Technology, Inc. Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices
JP2021174911A (ja) 2020-04-28 2021-11-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2022094651A (ja) 2020-12-15 2022-06-27 キオクシア株式会社 半導体装置および半導体装置の製造方法
US12137573B2 (en) 2021-12-09 2024-11-05 Taiwan Semiconductor Manufacturing Company Limited Self-aligned multilayer spacer matrix for high-density transistor arrays and methods for forming the same
CN115295570B (zh) * 2022-09-26 2022-12-30 合肥晶合集成电路股份有限公司 Cmos图像传感器的制作方法
CN115863252B (zh) * 2023-01-29 2023-05-23 合肥晶合集成电路股份有限公司 一种半导体结构的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204126B1 (en) * 2000-02-18 2001-03-20 Taiwan Semiconductor Manufacturing Company Method to fabricate a new structure with multi-self-aligned for split-gate flash
CN101261991A (zh) * 2007-03-06 2008-09-10 台湾积体电路制造股份有限公司 半导体结构与芯片
CN103296069A (zh) * 2012-02-28 2013-09-11 台湾积体电路制造股份有限公司 FinFET及其制造方法
CN103325736A (zh) * 2012-03-19 2013-09-25 三星电子株式会社 具有不同鳍宽的鳍式场效应晶体管的制作方法
US9214358B1 (en) * 2014-10-30 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Equal gate height control method for semiconductor device with different pattern densites

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4564272B2 (ja) 2004-03-23 2010-10-20 株式会社東芝 半導体装置およびその製造方法
US7098477B2 (en) * 2004-04-23 2006-08-29 International Business Machines Corporation Structure and method of manufacturing a finFET device having stacked fins
KR100652433B1 (ko) * 2005-09-08 2006-12-01 삼성전자주식회사 다중 비트 저장이 가능한 비휘발성 메모리 소자 및 그 제조방법
KR100990599B1 (ko) * 2008-05-30 2010-10-29 주식회사 하이닉스반도체 반도체 장치의 제조 방법 및 그에 따라 제조된 반도체 장치
JP2010182751A (ja) * 2009-02-03 2010-08-19 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法
JP2011009296A (ja) * 2009-06-23 2011-01-13 Panasonic Corp 半導体装置及びその製造方法
JP2011040458A (ja) * 2009-08-07 2011-02-24 Renesas Electronics Corp 半導体装置およびその製造方法
US8941153B2 (en) * 2009-11-20 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with different fin heights
US20110147848A1 (en) * 2009-12-23 2011-06-23 Kuhn Kelin J Multiple transistor fin heights
JP5816560B2 (ja) * 2012-01-10 2015-11-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5951374B2 (ja) * 2012-07-09 2016-07-13 ルネサスエレクトロニクス株式会社 半導体装置
KR101953240B1 (ko) * 2012-09-14 2019-03-04 삼성전자 주식회사 핀 트랜지스터 및 이를 포함하는 반도체 집적 회로
US9012287B2 (en) * 2012-11-14 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Cell layout for SRAM FinFET transistors
US8896067B2 (en) * 2013-01-08 2014-11-25 International Business Machines Corporation Method of forming finFET of variable channel width
US9159832B2 (en) * 2013-03-08 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor fin structures and methods for forming the same
KR102054302B1 (ko) 2013-06-21 2019-12-10 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US20150014808A1 (en) * 2013-07-11 2015-01-15 United Microelectronics Corp. Semiconductor structure and fabrication method thereof
US9006110B1 (en) * 2013-11-08 2015-04-14 United Microelectronics Corp. Method for fabricating patterned structure of semiconductor device
US9184087B2 (en) * 2013-12-27 2015-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming FinFETs with different fin heights
WO2015142847A1 (en) * 2014-03-17 2015-09-24 Tufts University Integrated circuit with multi-threshold bulk finfets
JP2015185613A (ja) * 2014-03-20 2015-10-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102327143B1 (ko) * 2015-03-03 2021-11-16 삼성전자주식회사 집적회로 소자
US10396000B2 (en) * 2015-07-01 2019-08-27 International Business Machines Corporation Test structure macro for monitoring dimensions of deep trench isolation regions and local trench isolation regions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204126B1 (en) * 2000-02-18 2001-03-20 Taiwan Semiconductor Manufacturing Company Method to fabricate a new structure with multi-self-aligned for split-gate flash
CN101261991A (zh) * 2007-03-06 2008-09-10 台湾积体电路制造股份有限公司 半导体结构与芯片
CN103296069A (zh) * 2012-02-28 2013-09-11 台湾积体电路制造股份有限公司 FinFET及其制造方法
CN103325736A (zh) * 2012-03-19 2013-09-25 三星电子株式会社 具有不同鳍宽的鳍式场效应晶体管的制作方法
US9214358B1 (en) * 2014-10-30 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Equal gate height control method for semiconductor device with different pattern densites

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JP6591291B2 (ja) 2019-10-16
TW201735260A (zh) 2017-10-01
US10600799B2 (en) 2020-03-24
JP2017123398A (ja) 2017-07-13
US11393838B2 (en) 2022-07-19
US20170200726A1 (en) 2017-07-13
CN106952920A (zh) 2017-07-14
US20200185394A1 (en) 2020-06-11

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