CN106463414B - 接合装置及接合方法 - Google Patents
接合装置及接合方法 Download PDFInfo
- Publication number
- CN106463414B CN106463414B CN201580022612.3A CN201580022612A CN106463414B CN 106463414 B CN106463414 B CN 106463414B CN 201580022612 A CN201580022612 A CN 201580022612A CN 106463414 B CN106463414 B CN 106463414B
- Authority
- CN
- China
- Prior art keywords
- gas stream
- engagement
- pressure fan
- opening
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
- H01L2224/75303—Shape of the pressing surface
- H01L2224/75305—Shape of the pressing surface comprising protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
- H01L2224/7531—Shape of other parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7565—Means for transporting the components to be connected
- H01L2224/75651—Belt conveyor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75702—Means for aligning in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75753—Means for optical alignment, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
- H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
- H01L2224/75824—Translational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/781—Means for controlling the bonding environment, e.g. valves, vacuum pumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
- H01L2224/78303—Shape of the pressing surface, e.g. tip or head
- H01L2224/78304—Shape of the pressing surface, e.g. tip or head comprising protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
- H01L2224/78305—Shape of other portions
- H01L2224/78307—Shape of other portions outside the capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7865—Means for transporting the components to be connected
- H01L2224/78651—Belt conveyor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78702—Means for aligning in the upper part of the bonding apparatus, e.g. in the capillary or wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78703—Mechanical holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78753—Means for optical alignment, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/788—Means for moving parts
- H01L2224/78821—Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/78824—Translational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/789—Means for monitoring the connection process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81054—Composition of the atmosphere
- H01L2224/81065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81054—Composition of the atmosphere
- H01L2224/81075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81091—Under pressure
- H01L2224/81093—Transient conditions, e.g. gas-flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83091—Under pressure
- H01L2224/83093—Transient conditions, e.g. gas-flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85091—Under pressure
- H01L2224/85093—Transient conditions, e.g. gas-flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Abstract
本发明涉及一种接合装置及接合方法,接合装置包括:第1送风机部(11h),以自形成于搬送部(20)的接合用开口(26)横穿用以辨识接合对象物的摄影空间(VS)的方式而形成第1气体流(D1);及第2送风机部(12h),沿摄影空间而形成第2气体流(D2)。第2送风机部(12h)以抑制周围气体(G2)被第1气体流(D1)卷入至摄影空间(VS)的方式,利用第2气体流(D2)形成障壁。由此,可抑制因对基板或引线架等接合对象物进行加热而产生的热浪的影响。
Description
技术领域
本发明涉及一种半导体装置的接合(bonding)装置及接合方法,特别涉及一种热浪防止技术。
背景技术
存在包括如下结构的接合装置,即,通过使基板或引线架(lead frame)等接合对象物在流通有惰性气体的密闭炉中搬送,而防止接合对象物的氧化。在所述接合装置中,在密闭炉设置有接合用开口,一面利用照相机等摄影部通过接合用开口辨识接合对象物,一面将接合工具(bonding tool)自接合用开口插入而进行接合处理。
作为所述领域的周知文献,例如在专利文献1中揭示有如下的晶粒接合(diebonding)装置:通过移动平台(table)将基板运送至加热装置,在将基板加热至规定温度以上后,接合电子零件。在专利文献1记载的发明中,当接合于基板时,通过照相机观察基板的热膨胀,并基于所述观察结果而修正所要接合的电子零件的着地坐标(专利文献1的权利要求1)。
特别是,在专利文献1记载的发明中构成为,自设置于接合用开口附近的送风机机构吹出空气,来消除因对接合对象物加热而在接合用开口附近产生的热浪,从而可清晰地观察基板。
现有技术文献
专利文献
专利文献1:日本专利特公平07-93335号公报
发明内容
发明所要解决的问题
然而,根据本申请发明人们的观察而得知:在对热浪吹附空气时,周围的被加热的空气因负压而被卷入,且进入摄影部拍摄基板的空间、即摄影空间而产生另一热浪,从而利用摄影部拍摄的图像模糊。若图像模糊,则会使接合对象物的辨识精度恶化而在接合位置产生误差,结果产生产量恶化的问题。
由此,本发明鉴于所述问题点,其问题之一在于:通过抑制因对基板或引线架等接合对象物加热而产生的热浪的影响,来提高接合精度。
解决问题的技术手段
(1)本发明的实施方式的一实施例的接合装置是具有搬送接合对象物的搬送部的接合装置,且所述接合装置包括送风机机构,所述送风机机构具有:第1送风机部,以自形成于搬送部的接合用开口横穿用以辨识接合对象物的摄影空间的方式而形成第1气体流;第2送风机部,沿摄影空间而形成第2气体流;且第2送风机部以抑制周围气体被第1气体流卷入至摄影空间的方式,利用第2气体流形成障壁。
又,本发明的实施方式的一实施例的接合方法,应用于具有搬送接合对象物的搬送部的接合装置,且包括:第1送风机步骤,以自形成于搬送部的接合用开口横穿用以辨识接合对象物的摄影空间的方式而形成第1气体流;及第2送风机步骤,沿摄影空间而形成第2气体流;且第2送风机步骤以抑制周围气体被第1气体流卷入至摄影空间的方式,利用第2气体流形成障壁。
本实施方式的所述接合装置,也可根据期望而包括以下构成。
(2)例如,也可包括接合臂,所述接合臂自所述接合用开口进行所述接合对象物的接合,且所述接合臂包括抑制所述第1气体流的乱流的形状。
(3)例如,所述第1送风机部也可在所述第1气体流不进入所述接合用开口的第1角度,形成所述第1气体流。
(4)例如,所述第1角度也可设为:自所述接合用开口的开口面起15°~80°的范围。
(5)例如,所述第1送风机部也可朝向所述搬送部中的所述接合对象物的搬送方向的相反方向,形成所述第1气体流。
(6)例如,所述第2送风机部也可在成为相对于周围气体的障壁的第2角度,形成所述第2气体流。
(7)例如,所述第2角度也可设为:自所述接合用开口的开口面起70°~135°的范围。
(8)例如,所述第2送风机部也可在较所述接合用开口的宽度更宽的范围,形成所述第2气体流。
(9)例如,所述第2气体流的流速也可设为小于所述第1气体流的流速。
(10)例如,所述送风机机构包括:压缩机(compressor),产生压缩气体;及管,供自压缩机供给的压缩气体通过;且所述第1送风机部通过自形成于管的第1喷嘴喷出压缩气体而形成第1气体流,所述第2送风机部通过自形成于管的第2喷嘴喷出压缩气体而形成第2气体流。
(11)例如,所述搬送部也可具有防止接合对象物的氧化的密闭炉。
(12)例如,所述送风机机构也可包括:第1送风机机构,具有所述第1送风机部;及第2送风机机构,具有所述第2送风机部。
发明的效果
根据本发明,以横穿摄影空间的方式形成第1气体流,因此自摄影空间排除自接合用开口吹出的热浪,并且沿摄影空间利用第2气体流形成障壁,因此可抑制周围气体被第1气体流卷入至摄影空间,从而可大幅抑制热浪进入摄影空间内的可能性,可防止摄影图像模糊。
附图说明
图1是说明本发明的第1实施方式的接合装置的概要的立体图。
图2是本发明的第1实施方式的密闭炉的接合用开口附近的放大立体图·局部剖面图。
图3是本发明的第1实施方式的密闭炉的概略剖面图。
图4是说明本发明的第1实施方式的接合装置的功能的方块图。
图5是本发明的第1实施方式的密闭炉的接合用开口附近的放大平面图。
图6是本发明的第1实施方式的密闭炉的接合用开口附近的放大平面图。
图7是说明本发明的第1实施方式的作用的概略剖面图。
图8是使用本发明的第1实施方式的接合臂的情形的概略剖面图。
图9是使用本发明的第1实施方式的接合臂的情形的概略平面图。
图10是说明本发明的第2实施方式的接合装置的概要的立体图。
图11是本发明的第2实施方式的密闭炉的接合用开口附近的放大立体图·局部剖面图。
图12是本发明的第2实施方式的密闭炉的概略剖面图。
图13是说明本发明的第2实施方式的接合装置的功能的方块图。
图14是本发明的第2实施方式的密闭炉的接合用开口附近的放大平面图。
图15是本发明的第2实施方式的密闭炉的接合用开口附近的放大平面图。
图16是说明本发明的第2实施方式的作用的概略剖面图。
图17是使用本发明的第2实施方式的接合臂的情形的概略剖面图。
图18是使用本发明的第2实施方式的接合臂的情形的概略平面图。
图19是使用现有的接合臂的情形的概略剖面图。
图20是使用现有的接合臂的情形的概略平面图。
具体实施方式
以下,对本发明的实施方式进行详细说明。再者,以下的实施方式是用以说明本发明的例示,本发明可在不脱离其主旨的范围内进行各种变形。例如,以下实施方式中的“…部”或“…机构”既可全部由硬件(hardware)构成,又可全部通过使计算机执行规定的软件程序而功能性地实现。又,也可构成为一部分由硬件构成,且剩余部分通过执行软件程序而功能性地实现。进而,根据需要所示的上下左右等位置关系只要未特别限定,则设为基于图示的显示。进而又,附图中的各种尺寸比率并不限定于所述图示的比率。
[第1实施方式]
(构成)
图1中表示说明本发明的实施方式的接合装置的概要的立体图。如图1所示,本实施方式的接合装置10大致上包括:密闭炉20、摄影部14、及接合臂16等而构成。
密闭炉20为用以搬送接合对象物的搬送部的一例,具体而言为:防止接合对象物的氧化的氧化防止单元。密闭炉20构成为:在供给惰性气体的搬送通路25上收纳有皮带(belt)22,可通过载置接合对象物(即引线架32)的皮带22的移动,而搬送接合对象物(即引线架32)。接合对象物例如为引线架或基板,在本实施方式中,作为接合对象物而例示为包含多个芯片(chip)34的引线架32。芯片34为半导体芯片等。再者,图1中省略密闭炉20的上部壳体(cover)的一部分的图示,因此,以可观察到移动中的皮带22及搬送中的引线架32的方式来图示。在密闭炉20的上表面设置有接合用开口26,可通过所述开口观察在内部搬送的引线架32的各芯片34、或者对所述引线架32的各芯片34进行物理处理。
图2中表示密闭炉20的接合用开口26附近的放大立体图·局部剖面图,图3中表示密闭炉20的概略剖面图。如图2及图3所示,密闭炉20隔着搬送通路25分为上部与下部而构成,在密闭炉20的上部形成有所述接合用开口26,且在密闭炉20的下部铺设有加热部28。
具体而言,如图2所示,在密闭炉20的上部设置有惰性气体流通路20h,且在通路的下表面以与搬送通路25贯通的方式设置有多个孔。如图3所示,在密闭炉20中,自外部的惰性气体供给部23(参照图4)经由气体导入口24,对惰性气体流通路20h供给惰性气体,并将惰性气体经由所述多个孔而供给至搬送通路25。供给的惰性气体向图2及图3所示的箭头方向流动,并自接合用开口26吹出。
在惰性气体流通的密闭炉20的搬送通路25中,通过外部的搬送机构21(参照图4)而驱动的皮带22搬送成为接合对象物的引线架32。搬送引线架32的搬送通路25是通过所述机构而流通惰性气体,因此可防止氧气等氧化剂气体经由接合用开口26进入至搬送通路25。由此,可有效地防止作为接合对象物的引线架32的氧化。
又,如图2及图3所示,铺设在密闭炉20的下部的加热部28设置为:可对在搬送通路25搬送的引线架32进行加热。引线架32通过加热而促进还原作用,从而抑制氧化的进行。
再者,在接合用开口26安装有按压构件27。按压构件27包括多个狭缝(slit),而赋予吹出惰性气体的路径,并且使引线架32最小限度地露出。
返回至图1,在密闭炉20的上表面且接合用开口26的附近,设置有作为本发明的送风机机构11的一部分的管11p。关于送风机机构11,将在下文进行详述。
摄影部14为电荷耦合元件(Charge Coupled Device,CCD)照相机等二维摄像单元,在本实施方式中作为位置检测单元而发挥功能。摄影部14设置为:通过摄影部驱动机构13而可沿上下方向及左右方向移动,将所述摄影部14搬送至接合用开口26上方,通过开口对引线架32的任一芯片34进行拍摄,而检测成为接合对象物的芯片34的位置。
接合臂16为对检测出位置的芯片34进行接合的接合工具。接合臂16设置为:通过接合臂驱动机构15而可沿上下方向及左右方向移动,将接合臂16搬送至接合用开口26上方,通过开口对检测出位置的芯片34实施接合。
图4中表示对接合装置10的功能进行说明的方块图。如图4所示,接合装置10包括:作为功能方块的送风机控制部100与接合控制部200。这些控制部通过包括微处理器(microprocessor)的计算机装置执行规定的软件程序而功能性地实现,且包含本发明的接合方法。
送风机控制部100为控制送风机机构11的功能方块。送风机机构11包含:管11p(参照图1)、未图示的压缩机、及自压缩机向管11p供给空气的供给路17(参照图6)等。
接合控制部200为控制摄影部驱动机构13、接合臂驱动机构15、搬送机构21、惰性气体供给部23、及加热部28的功能方块。具体而言,接合控制部200对摄影部驱动机构13供给控制信号,而使设置于摄影部驱动机构13的摄影部14相对于密闭炉20的接合用开口26而相对地移动,来使摄影部14位于通过接合用开口26观察的引线架32的一个芯片34上。然后,基于摄影部14拍摄的芯片34的图像而检测所述芯片34的位置。又,接合控制部200对接合臂驱动机构15供给控制信号,而使设置于接合臂驱动机构15的接合臂16以对应于所检测出的芯片34的位置的方式移动。然后,对接合臂16供给控制信号而进行芯片34的接合。
进而,接合控制部200对密闭炉20的搬送机构21供给控制信号,而使皮带22驱动。引线架32与皮带22一同沿密闭炉20的搬送通路25而搬送。又,接合控制部200对惰性气体供给部23供给控制信号,而使惰性气体自气体导入口24(参照图3)流通至搬送通路25的内部。进而,接合控制部200对加热部28供给控制信号,而抑制在搬送通路25中搬送的引线架32的氧化。
(送风机机构的构成)
其次,参照图5~图7对本实施方式的送风机机构的构成进行说明。图5中表示密闭炉20的接合用开口26附近的放大平面图。图6中表示密闭炉20的接合用开口26附近的放大剖面图(图5的A-A线剖面图)。
如图5及图6所示,邻接于密闭炉20的接合用开口26而配置送风机机构11的管11p。在管11p上设置有规定间隙的多个第1喷嘴(nozzle)11h、及规定间隙的多个第2喷嘴12h。如图6所示,在与管11p的轴方向垂直的方向的剖面视图下,第1喷嘴11h向与第2喷嘴12h不同的方向开口。
如图6所示,管11p经由供给路17而与未图示的压缩机连接。关于送风机机构11,作为自管11p的第1喷嘴11h喷出压缩气体而形成第1气体流的第1送风机部而发挥功能,并且同样地作为自管11p的第2喷嘴12h喷出压缩气体而形成第2气体流的第2送风机部而发挥功能。
多个第1喷嘴11h的开口总面积(例如个数)与多个第2喷嘴12h的开口总面积(例如个数)也可相同。在所述情形时,自多个第1喷嘴11h喷出的气体流的流速与自多个第2喷嘴12h喷出的气体流的流速相同。或者,多个第1喷嘴11h的开口总面积(取决于喷嘴直径及个数)也可小于多个第2喷嘴12h的开口总面积(取决于喷嘴直径及个数)。在所述情形时,自多个第1喷嘴11h喷出的气体流的流速大于自多个第2喷嘴12h喷出的气体流的流速。
再者,如图6所示,优选为,管11p与接合用开口26的距离Lbw尽量小。距管11p的第1喷嘴11h的距离越远,所提供的第1气体流D1的速度越降低。因此,在自接合用开口26至第1喷嘴11h的距离大的情形时,必须以大于接合用开口26的上部的流速的流速来供给第1气体流D1。对于所述方面而言,原因在于:第1喷嘴11h越靠近接合用开口26,则越以更低的初速度供给第1气体流D1即可,从而可减少由送风机机构11供给第1气体流D1的气体所消耗的能量。
基于图7的放大剖面图而对所述送风机机构的具体设定与作用效果进行说明。图7表示摄影部14被搬送至接合用开口26的上部,对引线架32的特定芯片34进行拍摄以检测位置的情形。将由摄影部14作为图像而拍摄的空间表示为摄影空间VS。
此处,在密闭炉20中,引线架32及搬送通路25的空间通过加热部28加热,在搬送通路25内流通的惰性气体与大气压相比成为高压,因此自接合用开口26吹出惰性气体的加热气体流G1。所述加热气体流G1与周围空气相比为高温,因此加热气体流G1当进入至摄影空间VS时成为热浪而导致拍摄的图像模糊。因此,在本实施方式中,设置以横穿摄影空间VS的方式供给第1气体流D1的送风机机构11的第1送风机部(例如管11p的多个第1喷嘴11h),将自接合用开口26喷出的加热气体流G1自摄影空间VS吹走而排除。再者,在本发明的实施方式中,作为在密闭炉中流通的气体,除所述的惰性气体以外,还可自压缩机供给空气,或者供给在惰性气体中含有少量氢气的发泡气体(foaming gas)。若使用含有少量氢气的发泡气体作为在密闭炉中流通的气体,则也可促进氧化还原作用。
然而,第1气体流D1为了排除加热气体流G1而具有规定以上的流速,其周围成为负压,因此产生向第1气体流D1吸入周围空气的其他空气流G0。密闭炉20的整体被加热,因此所述空气流G0也被略微加热,所述空气流G0当进入摄影空间VS时成为与加热气体流G1不同的热浪,从而导致所拍摄的图像模糊。
由此,在本实施方式中,进而设置有沿摄影空间VS而形成第2气体流D2的送风机机构11的第2送风机部(管11p的多个第2喷嘴12h),以抑制周围气体被第1气体流D1卷入至摄影空间VS的方式,利用第2气体流D2形成障壁。
具体而言,如图7所示,管11p的第1喷嘴11h形成在朝向接合用开口26的上部空间形成第1气体流D1的方向。即,第1喷嘴11h是以在所形成的第1气体流D1不进入接合用开口26的第1角度θ1形成第1气体流D1的方式而形成。若第1角度θ1过小,则第1气体流D1会自接合用开口26进入至密闭炉20中的搬送通路25,而会使引线架32的芯片34进行氧化反应。若第1角度θ1过大,则自接合用开口26吹出的加热气体流G1大量进入至摄影空间VS内部,从而导致图像模糊。例如所述第1角度θ1优选为设为自接合用开口26的开口面起15°~80°的范围,更优选为设为25°~30°的范围。
此处,管11p的第1喷嘴11h优选为如图7所示,以朝向密闭炉20中的接合对象物(引线架32)的搬送方向的相反方向形成第1气体流D1的方式而形成。其原因在于,若设定为所述方向,则即便万一第1气体流D1的一部分自接合用开口26进入至密闭炉20内部,所述第1气体流D1的一部分也会进入搬送通路25的上游侧。接合对象物在沿搬送通路25搬送的期间通过加热进行还原反应,因此即便因气体流的流入而产生略微氧化,若在搬送通路25的上游侧产生氧化,则可延长其后的产生还原反应的时间,从而可抑制相对于接合对象物的氧化反应的进行。
又,如图7所示,管11p的第2喷嘴12h形成在沿摄影部14经由接合用开口26拍摄的摄影空间VS而形成第2气体流D2的方向。即,第2喷嘴12h以在成为相对于周围气体的障壁的第2角度θ2形成第2气体流D2的方式而形成。其原因在于,若第2角度θ2过小,则会在摄影空间VS内形成第2气体流D2,周围空气以空气流G0的形式进入至摄影空间VS的一部分,且成为热浪而导致拍摄的图像模糊。若第2角度θ2过大,则摄影空间VS与第2气体流D2之间离开得过远,从而两者之间的空气以空气流G0的形式进入至摄影空间VS。例如,所述第2角度θ2优选为设为自接合用开口26的开口面起70°~135°的范围。
此处,优选为,管11p的第2喷嘴12h以在较接合用开口26的宽度更宽的范围形成第2气体流D2的方式而配置。其原因在于,若如此配置,则超过接合用开口26的宽度而利用第2气体流D2形成障壁,从而可抑制周围空气潜入而在摄影空间VS形成成为热浪源的空气流G0。例如,如图5所示,在本实施方式中,管11p及第2喷嘴12h以较接合用开口26的宽度仅宽出宽度Lex1+Lex2的方式设置。对于管11p及第1喷嘴11h,也同样地设置为可较接合用开口26更宽地形成第1气体流D1。其原因在于,可更切实地排除自接合用开口26喷出而来的加热气体流G1。
此处,第2气体流D2的流速也可设为小于第1气体流D1的流速。其原因在于,与将喷出而来的加热气体流G1强制性地排除的第1气体流D1相比,第2气体流D2只要阻止向第1气体流D1卷入的流动比较慢的空气流G2流入摄影空间VS即可,因此以较第1气体流D1的流速相当低的流速即可。例如,在第1气体流D1的流速优选为0.5m/s~10m/s左右的范围时,第2气体流D2的流速为其的十分之一左右即可。所述流速的控制如上所述,可通过调整喷嘴的开口总面积而进行。
(接合臂的构成)
其次,参照图8及图9对本实施方式的接合臂16的构成进行说明。图8中表示使用实施方式的接合臂16的情形的概略剖面图,图9中表示使用实施方式的接合臂16的情形的概略平面图。又,图19中表示使用现有的接合臂的情形的概略剖面图,图20中表示使用现有的接合臂的情形的概略平面图。
之前,对于接合臂的框体曝露于气体流中的结构并未特意设计。因此,所述现有型接合臂16PA如图19及图20所示,在自接合用开口26插入而进行接合对象物的接合处理的期间,若自管41p供给所述的第1气体流D1,则第1气体流D1直接冲撞于现有型接合臂16PA的框体的一部分而急剧地改变方向,从而会妨碍将自接合用开口26喷出的加热气体流除去。又,也存在因第1气体流D1冲撞于框体的一部分而产生乱流,从而使周围的被加热的空气产生热浪的可能性。
与此相对,在本发明的接合臂中,如图8及图9所示,本实施方式的接合臂16包括:抑制第1气体流D1的乱流的形状。作为抑制乱流的形状,第1优选为接合臂的直径相对小。第2优选为设为可防止与第1气体流D1对向的面妨碍气体流而产生乱流的形状、例如流线形状。在图8及图9所示的例子中,接合臂16的尖端部分形成为使直径缩小的圆筒。因此,自管11p的第1喷嘴11h供给的第1气体流D1不会变更大致的前进方向,又不会产生乱流,而是潜入接合臂16的周围。由此,即便在接合臂16自接合用开口26插入的情形时,也可有效地除去由第1气体流D1所引起的加热气体流。
以上,根据本实施方式具有以下效果。
(1)根据本实施方式,第1气体流D1吹走自接合用开口26喷出的加热气体流G1,而抑制加热气体流G1进入摄影空间VS,并且第2气体流D2沿摄影空间VS而形成障壁,因此可抑制周围气体被卷入至摄影空间VS。
(2)根据本实施方式,所述接合臂16包括:抑制第1气体流D1的乱流的形状,因此即便在接合臂16插入至接合用开口26的期间中,也可除去由第1气体流D1所引起的加热气体流G1。
(3)根据本实施方式,在第1气体流D1不会进入接合用开口26的第1角度θ1形成第1气体流D1,因此可抑制接合对象物的氧化,并且可有效地抑制热浪的产生。
(4)根据本实施方式,向密闭炉20中的接合对象物(即引线架32)的搬送方向的相反方向形成第1气体流D1,因此即便万一第1气体流D1的一部分自接合用开口26进入密闭炉20的内部,也可通过由加热引起的还原作用而抑制氧化的进行。
(5)根据本实施方式,在成为相对于周围气体的障壁的第2角度θ2形成第2气体流D2,因此可有效地抑制周围气体被卷入至摄影空间VS。
(6)根据本实施方式,在第2送风机部的范围(即配置有多个第2喷嘴12h的范围)宽于接合用开口26的宽度的范围形成第2气体流D2,因此超过接合用开口26的宽度而利用第2气体流D2形成障壁,从而可防止周围空气潜入而在摄影空间VS形成成为热浪源的空气流G0。
(7)根据本实施方式,第2气体流D2的流速小于第1气体流D1的流速,因此可减少送风过度地消耗能量。
(变形例)
本发明并不限定于所述实施方式,可进行各种变形而应用。
(1)在所述实施方式中,使用密闭炉20,但密闭炉并非为必需。即,本发明的搬送部并不限定于在密闭状态下搬送接合对象物的密闭炉20,只要具有在未密闭的状态下搬送接合对象物的构成即可。在所述情形时,例如只要为即便不是因密闭炉的接合用开口的加热气体流也会因局部性地加热对象物而在对象物的摄影空间产生热浪的环境,则可将本发明的送风机机构应用于摄影空间的周边。
(2)在所述实施方式中,管11p为直线性的管形状,但并不限定于此。例如,这些管也可以围绕摄影空间VS的方式形成。
(3)在所述实施方式中,对第1喷嘴11h及第2喷嘴12h的排列形态、个数及直径的大小等,以相同的形态表示,但这些形态并不限定于所述形态,可根据各者的气体流的供给速度或供给量而适当变更。
[第2实施方式]
(构成)
图10中表示对本发明的实施方式的接合装置的概要进行说明的立体图。如图10所示,本实施方式的接合装置110大致上包括:密闭炉120、摄影部114、及接合臂116等而构成。
密闭炉120为防止接合对象物的氧化的氧化防止单元,构成为在被供给惰性气体的搬送通路125上收容有皮带122,且通过载置接合对象物(即引线架132)的皮带122移动,而可搬送接合对象物(即引线架132)。接合对象物例如为引线架或基板,在本实施方式中,作为接合对象物,例示包含多个芯片134的引线架132。芯片134为半导体芯片等。再者,图10中,省略密闭炉120的上部壳体的一部分的图示,因此以可观察到移动中的皮带122及搬送中的引线架132的方式进行图示。在密闭炉120的上表面设置有接合用开口126,可通过所述开口观察在内部搬送的引线架132的各芯片134、或者对所述引线架132的各芯片134进行物理处理。
图11中表示密闭炉120的接合用开口126附近的放大立体图·局部剖面图,图12中表示密闭炉120的概略剖面图。如图11及图12所示,密闭炉120隔着搬送通路125分为上部与下部而构成,在密闭炉120的上部形成有所述接合用开口126,且在密闭炉120的下部铺设有加热部128。
具体而言,如图11所示,在密闭炉120的上部设置有惰性气体流通路120h,且在通路的下表面以与搬送通路125贯通的方式设置有多个孔。如图12所示,对于密闭炉120,自外部的惰性气体供给部123(参照图13)经由气体导入口124而对惰性气体流通路120h供给惰性气体,并将惰性气体经由所述多个孔而供给至搬送通路125。所供给的惰性气体向图11及图12所示的箭头方向流动,并自接合用开口126吹出。
在惰性气体流通的密闭炉120的搬送通路125中,通过外部的搬送机构121(参照图13)而驱动的皮带122搬送成为接合对象物的引线架132。搬送引线架132的搬送通路125是通过所述机构而流通惰性气体,因此可防止氧气等氧化剂气体经由接合用开口126进入搬送通路125。由此,可有效地防止作为接合对象物的引线架132的氧化。
又,如图11及图12所示,铺设在密闭炉120下部的加热部128,设置为:可对在搬送通路125中搬送的引线架132进行加热。引线架132通过加热而促进还原作用,从而可抑制氧化的进行。
再者,在接合用开口126安装有按压构件127。按压构件127包括多个狭缝,而赋予用以吹出惰性气体的路径,并且使引线架132最小限度地露出。
返回至图10,在密闭炉120的上表面且接合用开口126的附近,设置有:作为本发明的第1送风机机构111的一部分的第1管111p,以及作为第2送风机机构112的一部分的第2管112p。关于第1送风机机构111与第2送风机机构112,将在下文进行详述。
摄影部114为CCD(Charge Coupled Device)照相机等二维摄像单元,在本实施方式中作为位置检测单元而发挥功能。摄影部114设置为:通过摄影部驱动机构113而可沿上下方向及左右方向移动,将所述摄影部114搬送至接合用开口126上,通过开口对引线架132的任一芯片134进行拍摄,而检测成为接合对象物的芯片134的位置。
接合臂116为对检测出位置的芯片134进行接合的接合工具。接合臂116设置为:通过接合臂驱动机构115而可沿上下方向及左右方向移动,将所述接合臂116搬送至接合用开口126上,通过开口对检测出位置的芯片134实施接合。
图13中表示说明接合装置110的功能的方块图。如图13所示,接合装置110包括:作为功能方块的送风机控制部1100与接合控制部1200。这些控制部通过包括微处理器的计算机装置执行规定的软件程序而功能性地实现,且包含本发明的接合方法。
送风机控制部1100为控制第1送风机机构111及第2送风机机构112的功能方块。第1送风机机构111包含:第1管111p(参照图10)、未图示的第1压缩机、及自第1压缩机向第1管111p供给空气的第1供给路117-1(参照图15)等。第2送风机机构112包含:第2管112p(参照图10)、未图示的第2压缩机、及自第2压缩机向第2管112p供给空气的第2供给路117-2(参照图15)等。
接合控制部1200为控制摄影部驱动机构113、接合臂驱动机构115、搬送机构121、惰性气体供给部123、及加热部128的功能方块。具体而言,接合控制部1200对摄影部驱动机构113供给控制信号,使设置在摄影部驱动机构113的摄影部114相对于密闭炉120的接合用开口126而相对地移动,来使摄影部114位于通过接合用开口126观察的引线架132的一个芯片134上。然后,基于摄影部114拍摄的芯片134的图像而检测所述芯片134的位置。又,接合控制部1200对接合臂驱动机构115供给控制信号,使设置在接合臂驱动机构115的接合臂116以与检测出的芯片134的位置对应的方式移动。然后,对接合臂116供给控制信号而进行芯片134的接合。
进而,接合控制部1200对密闭炉120的搬送机构121供给控制信号,而使皮带122驱动。引线架132与皮带122一同沿密闭炉120的搬送通路125而搬送。又,接合控制部1200对惰性气体供给部123供给控制信号,而使惰性气体自气体导入口124(参照图12)流通至搬送通路125的内部。进而,接合控制部1200对加热部128供给控制信号,而抑制在搬送通路125中搬送的引线架132的氧化。
(送风机机构的构成)
接下来,参照图14~图16对本实施方式的送风机机构的构成进行说明。图14中表示密闭炉120的接合用开口126附近的放大平面图。图15中表示密闭炉120的接合用开口126附近的放大剖面图(图14的B-B线剖面图)。
如图14及图15所示,邻接于密闭炉120的接合用开口126而配置有第1送风机机构111的第1管111p及第2管112p。在第1管111p上以规定的间隙设置有多个第1喷嘴111h,且在第2管112p上以规定的间隙设置有多个第2喷嘴112h。
如图15所示,第1管111p构成为:经由第1供给路117-1而与未图示的第1压缩机连接,且自第1压缩机供给的空气自第1管111p的第1喷嘴111h喷出而形成第1气体流。第2管112p构成为:经由第2供给路117-2而与未图示的第2压缩机连接,且自第2压缩机供给的空气自第2管112p的第2喷嘴112h喷出而形成第2气体流。
如此,通过构成为自独立的个别的压缩机对第1管111p及第2管112p的各者供给空气,而可使供给至各个管的空气压不同,从而可使自各个喷嘴喷出的气体流的流速不同。然而,也可构成为将第1管111p及第2管112p连接于共用的供给路,而自一个压缩机供给空气。在所述情形时,优选为通过使第1喷嘴111h及第2喷嘴112h的喷嘴直径不同,或者在中途设置如孔板(orifice)那样的流量限制单元,而使自第1喷嘴111h喷出的气体流的流速与自第2喷嘴112h喷出的气体流的流速不同。
再者,如图15所示,优选为,第1管111p与接合用开口126的距离Lbw尽量小。距第1管111p的第1喷嘴111h的距离越远,所提供的第1气体流D1的速度越降低。因此,在自接合用开口126至第1喷嘴111h的距离大的情形时,必须以大于接合用开口126上部的流速的流速来供给第1气体流D1。对于所述方面而言,原因在于:第1喷嘴111h越靠近接合用开口126,越以更低的初速度供给第1气体流D1即可,从而可减少由第1送风机机构111供给第1气体流D1的气体所消耗的能量。
基于图16的放大剖面图而对所述送风机机构的具体设定与作用效果进行说明。图16表示摄影部114被搬送至接合用开口126的上部,对引线架132的特定芯片134进行拍摄以检测其位置的情形。将由摄影部114作为图像而拍摄的空间表示为摄影空问VS。
此处,在密闭炉120中,引线架132及搬送通路125的空间通过加热部128加热,在搬送通路125内流通的惰性气体与大气压相比成为高压,因此自接合用开口126吹出惰性气体的加热气体流G1。所述加热气体流G1与周围空气相比为高温,因此加热气体流G1当进入摄影空间VS时会成为热浪而使拍摄的图像模糊。因此,在本实施方式中,设置以横穿摄影空间VS的方式供给第1气体流D1的第1送风机机构111,将自接合用开口126喷出的加热气体流G1自摄影空间VS吹走而排除。再者,在本发明的实施方式中,作为在密闭炉中流通的气体,除所述的惰性气体以外,还可自压缩机供给空气,或者供给在惰性气体中含有少量氢气的发泡气体。若使用含有少量氢气的发泡气体作为在密闭炉中流通的气体,则也可促进氧化还原作用。
然而,第1气体流D1为了排除加热气体流G1而具有规定以上的流速,其周围成为负压,因此产生向第1气体流D1吸入周围空气的其他空气流G0,密闭炉120的整体被加热,因此所述空气流G0也被略微加热,所述空气流G0当进入摄影空间VS时会成为与加热气体流G1不同的热浪而导致拍摄的图像模糊。
由此,在本实施方式中,进而设置沿摄影空间VS而形成第2气体流D2的第2送风机机构112,以抑制周围气体被第1气体流D1卷入至摄影空间VS的方式,利用第2气体流D2形成障壁。
关于第1送风机机构111,具体而言如图16所示,第1管111p的第1喷嘴111h形成在向接合用开口126的上部空间形成第1气体流D1的方向。即,第1喷嘴111h是以在所形成的第1气体流D1不进入接合用开口126的第1角度θ1形成第1气体流D1的方式而形成。若第1角度θ1过小,则第1气体流D1会自接合用开口126进入密闭炉120中的搬送通路125,而使引线架132的芯片134进行氧化反应。若第1角度θ1过大,则自接合用开口126吹出的加热气体流G1大量进入摄影空间VS的内部而会使图像模糊。例如,所述第1角度θ1优选为自接合用开口126的开口面起15°~80°的范围,更优选为25°~30°的范围。
此处,第1管111p的第1喷嘴111h优选为如图16所示,以向密闭炉120中的接合对象物(引线架132)的搬送方向的相反方向形成第1气体流D1的方式而形成。其原因在于,若设定在所述方向,则即便万一第1气体流D1的一部分自接合用开口126进入密闭炉120的内部,也会进入搬送通路125的上游侧。接合对象物在沿搬送通路125搬送的期间通过加热而进行还原反应,因此即便因气体流的流入而略微产生氧化,若在搬送通路125的上游侧产生氧化,则可延长其后的产生还原反应的时间,从而也可抑制相对于接合对象物的氧化反应的进行。
又,关于第2送风机机构112,具体而言如图16所示,第2管112p的第2喷嘴112h形成在沿摄影部114经由接合用开口126拍摄的摄影空间VS而形成第2气体流D2的方向。即,第2喷嘴112h以在成为相对于周围气体的障壁的第2角度θ2形成第2气体流D2的方式而形成。其原因在于,若第2角度θ2过小,则会在摄影空间VS内形成第2气体流D2,周围空气以空气流G0的形式进入摄影空间VS的一部分而成为热浪导致所拍摄的图像模糊。若第2角度θ2过大,则摄影空间VS与第2气体流D2之间离开得过远,两者之间的空气以空气流G0的形式进入摄影空间VS。例如,所述第2角度θ2优选为设为自接合用开口126的开口面起70°~135°的范围。
此处,优选为,第2管112p的第2喷嘴112h以在较接合用开口126的宽度更宽的范围形成第2气体流D2的方式而配置。其原因在于,若如此配置,则超过接合用开口126的宽度而利用第2气体流D2形成障壁,从而可防止周围空气潜入而在摄影空间VS形成成为热浪源的空气流G0。例如,如图14所示,在本实施方式中,第2管112p及第2喷嘴112h以较接合用开口126的宽度仅宽出宽度Lex1+Lex2的方式设置。对于第1管111p及第1喷嘴111h,也可同样地设置为可较接合用开口126更宽地形成第1气体流D1。其原因在于,可切实地排除自接合用开口126喷出而来的加热气体流G1。
此处,第2气体流D2的流速也可设为小于第1气体流D1的流速。其原因在于,与将喷出而来的加热气体流G1强制性地排除的第1气体流D1相比,第2气体流D2只要阻止向第1气体流D1卷入的流动比较慢的空气流G2流入摄影空间VS即可,因此以较第1气体流D1的流速相当低的流速即可。例如,在第1气体流D1的流速优选为0.5m/s~10m/s左右的范围时,第2气体流D2的流速为其的十分之一左右即可。
(接合臂的构成)
其次,参照图17及图18对本实施方式的接合臂116的构成进行说明。图17中表示使用实施方式的接合臂116的情形的概略剖面图,图18中表示使用实施方式的接合臂116的情形的概略平面图。
之前,对于接合臂的框体曝露于气体流中的结构并未特意设计。因此,所述现有型接合臂16PA如图19及图20所示,在对自接合用开口26插入的接合对象物进行接合处理的期间,若自管41p供给所述第1气体流D1,则第1气体流D1直接冲撞于现有型接合臂16PA的框体的一部分而急剧地改变方向,从而会妨碍将自接合用开口26喷出的加热气体流除去。又,也存在因第1气体流D1冲撞于框体的一部分而产生乱流,从而使周围的被加热的空气产生热浪的可能性。
与此相对,在本发明的接合臂中,如图17及图18所示,本实施方式的接合臂116包括抑制第1气体流D1的乱流的形状。作为抑制乱流的形状,第1优选为接合臂的直径相对小。第2优选为设为可防止与第1气体流D1对向的面妨碍气体流而产生乱流的形状、例如流线形状。在图17及图18所示的例子中,接合臂116的尖端部分形成为使直径缩小的圆筒。因此,自第1管111p的第1喷嘴111h供给的第1气体流D1不会变更大致的前进方向,又不会产生乱流而潜入接合臂116的周围。由此,即便在接合臂116自接合用开口126插入的情形时,也可有效地除去由第1气体流D1所引起的加热气体流。
以上,根据本实施方式具有以下效果。
(1)根据本实施方式,第1气体流D1吹走自接合用开口126喷出的加热气体流G1,而抑制加热气体流G1进入摄影空间VS,并且第2气体流D2沿摄影空间VS而形成障壁,因此可抑制周围气体被卷入至摄影空间VS。
(2)根据本实施方式,所述接合臂116包括抑制第1气体流D1的乱流的形状,因此即便在接合臂116插入至接合用开口126的期间中,也可将由第1气体流D1所引起的加热气体流G1除去。
(3)根据本实施方式,在第1气体流D1不进入接合用开口126的第1角度θ1形成第1气体流D1,因此既可抑制接合对象物的氧化,又可有效地抑制热浪的产生。
(4)根据本实施方式,向密闭炉120中的接合对象物(即引线架132)的搬送方向的相反方向形成第1气体流D1,因此即便万一第1气体流D1的一部分自接合用开口126进入密闭炉120的内部,也可通过加热所引起的还原作用而抑制氧化的进行。
(5)根据本实施方式,在成为相对于周围气体的障壁的第2角度θ2形成第2气体流D2,因此可有效地抑制周围气体被卷入至摄影空间VS。
(6)根据本实施方式,第2送风机机构112在较接合用开口126的宽度更宽的范围形成第2气体流D2,因此超过接合用开口126的宽度而利用第2气体流D2形成障壁,从而可防止周围空气潜入而在摄影空间VS形成成为热浪源的空气流G0。
(7)根据本实施方式,第2气体流D2的流速小于第1气体流D1的流速,因此可减少送风过度地消耗能量。
(变形例)
本发明并不限定于所述实施方式,可进行各种变形而应用。
(1)在所述实施方式中,使用密闭炉120,但密闭炉并非为必需。例如只要为即便不是因密闭炉的接合用开口的加热气体流也会因局部性地加热对象物而在对象物的摄影空间产生热浪的环境,则可将本发明的第1送风机机构及第2送风机机构应用于摄影空间的周边。
(2)在所述实施方式中,第1管111p及第2管112p为直线性的管形状,但并不限定于此。例如,这些管也可以围绕摄影空间VS的方式形成。
(3)在所述实施方式中,第1管111p与第2管112p邻接配置,但并不限定于此。例如,也可构成为将第2管112p配置在远离第1管111p的位置而自不同的方向供给第2气体流D2。在本发明中,只要可防止周围空气被卷入至摄影空间VS而引起热浪即可,因此只要为在周围空间与摄影空间VS之间形成气帘(air curtain)的构成,则为本发明的应用范围。
(4)在所述实施方式中,构成为自第1管111p供给第1气体流D1,且自第2管112p供给第2气体流D2,但并不限定于此。例如,也可构成为将可向不同的方向供给气体流的多个喷嘴列配置在一个管上,供给至一个管的空气自多个喷嘴列分别被供给。例如可构成为将两个喷嘴列设置在一个管上,自各个喷嘴列供给第1气体流及第2气体流。在所述构成中,可通过调整喷嘴的形态,例如调整设置在喷嘴列中的喷嘴数量或喷嘴的孔径而变更各个气体流的供给速度或供给量。
产业上的可利用性
本发明并不限定于所述实施方式,可在产业上广泛利用。例如,作为接合装置的接合方式,可应用于晶粒接合、倒装芯片接合(flip chip bonding)、打线接合(wirebonding)等摄影空间的热浪成为问题的各种方式。
Claims (13)
1.一种接合装置,具有搬送接合对象物的搬送部,所述接合装置的特征在于包括:
送风机机构,所述送风机机构具有:
第1送风机部,以自形成于所述搬送部的接合用开口横穿用以辨识所述接合对象物的摄影空间的方式,而形成第1气体流;及
第2送风机部,沿所述摄影空间而形成第2气体流;且
所述第2送风机部以抑制周围气体被所述第1气体流卷入至所述摄影空间的方式,利用所述第2气体流形成障壁。
2.根据权利要求1所述的接合装置,其特征在于还包括:
接合臂,所述接合臂自所述接合用开口进行所述接合对象物的接合,且
所述接合臂具备抑制所述第1气体流的乱流的形状。
3.根据权利要求1所述的接合装置,其特征在于,
所述第1送风机部在所述第1气体流不进入所述接合用开口的第1角度,形成所述第1气体流。
4.根据权利要求3所述的接合装置,其特征在于,
所述第1角度为自所述接合用开口的开口面起15°~80°的范围。
5.根据权利要求1所述的接合装置,其特征在于,
所述第1送风机部朝向所述搬送部中的所述接合对象物的搬送方向的相反方向,形成所述第1气体流。
6.根据权利要求1所述的接合装置,其特征在于,
所述第2送风机部在成为相对于周围气体的障壁的第2角度,形成所述第2气体流。
7.根据权利要求6所述的接合装置,其特征在于,
所述第2角度为自所述接合用开口的开口面起70°~135°的范围。
8.根据权利要求1所述的接合装置,其特征在于,
所述第2送风机部在较所述接合用开口的宽度更宽的范围,形成所述第2气体流。
9.根据权利要求1所述的接合装置,其特征在于,
所述第2气体流的流速小于所述第1气体流的流速。
10.根据权利要求1所述的接合装置,其特征在于,
所述送风机机构包括:
压缩机,产生压缩气体;以及
管,供自所述压缩机供给的压缩气体通过;且
所述第1送风机部通过自形成于所述管的第1喷嘴喷出压缩气体而形成所述第1气体流,
所述第2送风机部通过自形成于所述管的第2喷嘴喷出压缩气体而形成所述第2气体流。
11.根据权利要求1所述的接合装置,其特征在于,
所述搬送部具有防止所述接合对象物的氧化的密闭炉。
12.根据权利要求1所述的接合装置,其特征在于,
所述送风机机构包括:
第1送风机机构,具有所述第1送风机部;以及
第2送风机机构,具有所述第2送风机部。
13.一种接合方法,应用于具有搬送接合对象物的搬送部的接合装置,所述接合方法的特征在于包括:
第1送风机步骤,以自形成于所述搬送部的接合用开口横穿用以辨识所述接合对象物的摄影空间的方式,而形成第1气体流;以及
第2送风机步骤,沿所述摄影空间而形成第2气体流;且
所述第2送风机步骤以抑制周围气体被所述第1气体流卷入至所述摄影空间的方式,利用所述第2气体流形成障壁。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-052569 | 2014-03-14 | ||
JP2014052569A JP6118967B2 (ja) | 2014-03-14 | 2014-03-14 | ボンディング装置およびボンディング方法 |
JP2015-007602 | 2015-01-19 | ||
JP2015007602A JP5849163B1 (ja) | 2015-01-19 | 2015-01-19 | ボンディング装置およびボンディング方法 |
PCT/JP2015/053590 WO2015137029A1 (ja) | 2014-03-14 | 2015-02-10 | ボンディング装置およびボンディング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106463414A CN106463414A (zh) | 2017-02-22 |
CN106463414B true CN106463414B (zh) | 2019-01-15 |
Family
ID=54071481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580022612.3A Active CN106463414B (zh) | 2014-03-14 | 2015-02-10 | 接合装置及接合方法 |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR101874852B1 (zh) |
CN (1) | CN106463414B (zh) |
SG (1) | SG11201608603XA (zh) |
TW (1) | TWI562253B (zh) |
WO (1) | WO2015137029A1 (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0263130A (ja) * | 1988-08-29 | 1990-03-02 | Matsushita Electric Ind Co Ltd | 共晶ダイボンダーによる電子部品の実装方法 |
JPH104118A (ja) * | 1996-06-17 | 1998-01-06 | Matsushita Electric Ind Co Ltd | ワイヤボンディング装置 |
CN1393920A (zh) * | 2001-06-27 | 2003-01-29 | 三洋电机株式会社 | 识别装置、接合装置及电路装置的制造方法 |
CN1393919A (zh) * | 2001-06-27 | 2003-01-29 | 三洋电机株式会社 | 识别装置、接合装置及电路装置的制造方法 |
CN103489805A (zh) * | 2012-06-12 | 2014-01-01 | 苏州美图半导体技术有限公司 | 晶圆键合系统 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4918619Y1 (zh) * | 1970-10-20 | 1974-05-17 | ||
JPH0350789A (ja) * | 1989-07-18 | 1991-03-05 | Murata Mfg Co Ltd | 電子部品装置の半田付け方法 |
JPH0793335A (ja) | 1993-06-07 | 1995-04-07 | Internatl Business Mach Corp <Ibm> | テキストの言語機能を提供する方法 |
JP3392254B2 (ja) * | 1995-02-14 | 2003-03-31 | ローム株式会社 | ワイヤボンダ |
JP2003037131A (ja) * | 2001-07-25 | 2003-02-07 | Sanyo Electric Co Ltd | ボンディング装置 |
JP5016816B2 (ja) * | 2005-12-27 | 2012-09-05 | 株式会社東芝 | ボンディング装置及び半導体装置の製造方法 |
JP2010032387A (ja) * | 2008-07-29 | 2010-02-12 | Yamabun Denki:Kk | 温度測定方法、温度測定装置、温度制御方法、温度制御装置、補正方法、及び補正装置 |
-
2015
- 2015-02-10 CN CN201580022612.3A patent/CN106463414B/zh active Active
- 2015-02-10 SG SG11201608603XA patent/SG11201608603XA/en unknown
- 2015-02-10 WO PCT/JP2015/053590 patent/WO2015137029A1/ja active Application Filing
- 2015-02-10 KR KR1020167028065A patent/KR101874852B1/ko active IP Right Grant
- 2015-03-11 TW TW104107673A patent/TWI562253B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0263130A (ja) * | 1988-08-29 | 1990-03-02 | Matsushita Electric Ind Co Ltd | 共晶ダイボンダーによる電子部品の実装方法 |
JPH0793335B2 (ja) * | 1988-08-29 | 1995-10-09 | 松下電器産業株式会社 | 共晶ダイボンダーによる電子部品の実装方法 |
JPH104118A (ja) * | 1996-06-17 | 1998-01-06 | Matsushita Electric Ind Co Ltd | ワイヤボンディング装置 |
CN1393920A (zh) * | 2001-06-27 | 2003-01-29 | 三洋电机株式会社 | 识别装置、接合装置及电路装置的制造方法 |
CN1393919A (zh) * | 2001-06-27 | 2003-01-29 | 三洋电机株式会社 | 识别装置、接合装置及电路装置的制造方法 |
CN103489805A (zh) * | 2012-06-12 | 2014-01-01 | 苏州美图半导体技术有限公司 | 晶圆键合系统 |
Also Published As
Publication number | Publication date |
---|---|
TWI562253B (en) | 2016-12-11 |
SG11201608603XA (en) | 2016-12-29 |
TW201601228A (zh) | 2016-01-01 |
CN106463414A (zh) | 2017-02-22 |
KR101874852B1 (ko) | 2018-07-05 |
KR20160132077A (ko) | 2016-11-16 |
WO2015137029A1 (ja) | 2015-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103717057B (zh) | 部件检查方法及装置 | |
CN104105391B (zh) | 元件安装装置 | |
JP2008109033A (ja) | はんだ付け装置 | |
CN106373903B (zh) | 集成电路芯片外观检测编带装置 | |
CN106664825B (zh) | 元件数据处理装置、元件数据处理方法及元件安装系统 | |
JP2008103405A (ja) | 実装機およびその部品清掃方法 | |
CN106104195A (zh) | 图像处理装置及基板生产系统 | |
CN110265318A (zh) | 芯片贴装装置及半导体装置的制造方法 | |
CN106463414B (zh) | 接合装置及接合方法 | |
JP2014112597A (ja) | リフローはんだ付け方法およびリフロー炉 | |
CN103857273B (zh) | 元件安装系统和元件安装方法 | |
JP2009238873A (ja) | 部品実装方法 | |
JP4744407B2 (ja) | 電子部品装着装置 | |
JP5849163B1 (ja) | ボンディング装置およびボンディング方法 | |
TW201526128A (zh) | 晶粒接合器及接著劑塗佈方法 | |
JP2008147705A (ja) | 電子部品実装装置 | |
JP6921234B2 (ja) | 部品供給装置及び、部品供給方法 | |
JP6118967B2 (ja) | ボンディング装置およびボンディング方法 | |
JP5016816B2 (ja) | ボンディング装置及び半導体装置の製造方法 | |
JP5969789B2 (ja) | 電子部品実装装置 | |
CN107809899A (zh) | 部件搭载装置以及部件搭载方法 | |
JP6968569B2 (ja) | 部品実装装置 | |
JP6027826B2 (ja) | 基板停止制御シミュレータ並びに表面実装機 | |
JP6204050B2 (ja) | 電子部品装着機 | |
US10729048B2 (en) | Optimization program and mounting work system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |