CN106409894B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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CN106409894B
CN106409894B CN201610404085.9A CN201610404085A CN106409894B CN 106409894 B CN106409894 B CN 106409894B CN 201610404085 A CN201610404085 A CN 201610404085A CN 106409894 B CN106409894 B CN 106409894B
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region
trench
semiconductor
insulating film
semiconductor device
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CN106409894A (zh
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松浦仁
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/035—Etching a recess in the emitter region 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201610404085.9A 2015-06-10 2016-06-08 半导体器件及其制造方法 Active CN106409894B (zh)

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JP2015117796A JP6495751B2 (ja) 2015-06-10 2015-06-10 半導体装置および半導体装置の製造方法
JP2015-117796 2015-06-10

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CN106409894A CN106409894A (zh) 2017-02-15
CN106409894B true CN106409894B (zh) 2020-09-11

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JP (1) JP6495751B2 (cg-RX-API-DMAC10.html)
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JP6448434B2 (ja) * 2015-03-25 2019-01-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6495751B2 (ja) * 2015-06-10 2019-04-03 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2017022798A (ja) * 2015-07-07 2017-01-26 ルネサスエレクトロニクス株式会社 電力変換装置および駆動装置
JP6649216B2 (ja) 2016-09-16 2020-02-19 株式会社東芝 半導体装置およびその製造方法
IT201600108699A1 (it) * 2016-10-27 2018-04-27 St Microelectronics Srl Dispositivo semiconduttore a canale verticale con ridotta tensione di saturazione
KR102568562B1 (ko) * 2017-01-24 2023-08-18 삼성전자주식회사 반도체 장치
JP7000240B2 (ja) * 2018-04-18 2022-01-19 ルネサスエレクトロニクス株式会社 半導体装置
JP7275573B2 (ja) * 2018-12-27 2023-05-18 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7120916B2 (ja) * 2018-12-27 2022-08-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN113906572A (zh) * 2019-06-04 2022-01-07 罗姆股份有限公司 半导体装置

Citations (5)

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CN102751329A (zh) * 2011-04-19 2012-10-24 三菱电机株式会社 半导体装置
JP2013120809A (ja) * 2011-12-07 2013-06-17 Hitachi Ltd 半導体装置及びそれを用いた電力変換装置
CN103199108A (zh) * 2012-01-05 2013-07-10 瑞萨电子株式会社 Ie型沟槽栅极igbt
CN103489905A (zh) * 2012-06-11 2014-01-01 瑞萨电子株式会社 窄的有源单元ie型沟槽栅极igbt及其制造方法
CN104282744A (zh) * 2014-10-31 2015-01-14 无锡同方微电子有限公司 一种igbt器件结构

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JP2005085903A (ja) * 2003-09-05 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
JP4857566B2 (ja) * 2005-01-27 2012-01-18 富士電機株式会社 絶縁ゲート型半導体装置とその製造方法
JP5423018B2 (ja) 2009-02-02 2014-02-19 三菱電機株式会社 半導体装置
JP5216801B2 (ja) * 2010-03-24 2013-06-19 株式会社東芝 半導体装置
US8809911B2 (en) 2010-11-30 2014-08-19 Fuji Electric Co., Ltd. Semiconductor device
JP5969771B2 (ja) 2011-05-16 2016-08-17 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
JP6290526B2 (ja) 2011-08-24 2018-03-07 ローム株式会社 半導体装置およびその製造方法
KR102087078B1 (ko) * 2013-11-04 2020-03-10 삼성전자주식회사 반도체 소자
JP6420175B2 (ja) * 2014-05-22 2018-11-07 ルネサスエレクトロニクス株式会社 半導体装置
JP2016076561A (ja) * 2014-10-03 2016-05-12 株式会社東芝 記憶装置
JP6164201B2 (ja) * 2014-11-17 2017-07-19 トヨタ自動車株式会社 半導体装置
JP2016174027A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体装置
US9391135B1 (en) * 2015-03-23 2016-07-12 Semiconductor Components Industries, Llc Semiconductor device
JP6448434B2 (ja) * 2015-03-25 2019-01-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6385873B2 (ja) * 2015-03-30 2018-09-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6495751B2 (ja) * 2015-06-10 2019-04-03 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
CN102751329A (zh) * 2011-04-19 2012-10-24 三菱电机株式会社 半导体装置
JP2013120809A (ja) * 2011-12-07 2013-06-17 Hitachi Ltd 半導体装置及びそれを用いた電力変換装置
CN103199108A (zh) * 2012-01-05 2013-07-10 瑞萨电子株式会社 Ie型沟槽栅极igbt
CN103489905A (zh) * 2012-06-11 2014-01-01 瑞萨电子株式会社 窄的有源单元ie型沟槽栅极igbt及其制造方法
CN104282744A (zh) * 2014-10-31 2015-01-14 无锡同方微电子有限公司 一种igbt器件结构

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US10032895B2 (en) 2018-07-24
JP2017005117A (ja) 2017-01-05
CN106409894A (zh) 2017-02-15
US20160365433A1 (en) 2016-12-15
US9871127B2 (en) 2018-01-16
US20180083130A1 (en) 2018-03-22
JP6495751B2 (ja) 2019-04-03

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