CN106233451B - 制造静电夹的方法、静电夹及静电夹系统 - Google Patents

制造静电夹的方法、静电夹及静电夹系统 Download PDF

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Publication number
CN106233451B
CN106233451B CN201580006538.6A CN201580006538A CN106233451B CN 106233451 B CN106233451 B CN 106233451B CN 201580006538 A CN201580006538 A CN 201580006538A CN 106233451 B CN106233451 B CN 106233451B
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China
Prior art keywords
layer
electrostatic
insulator
aluminum oxide
electrode
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Chinese (zh)
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CN106233451A (zh
Inventor
岱尔·K·史东
理查尔·库肯
林奕宽
朱利安·G·布雷克
留德米拉·史东
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Varian Semiconductor Equipment Associates Inc
Entegris Inc
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Varian Semiconductor Equipment Associates Inc
Entegris Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
CN201580006538.6A 2014-01-30 2015-01-30 制造静电夹的方法、静电夹及静电夹系统 Active CN106233451B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461933659P 2014-01-30 2014-01-30
US61/933,659 2014-01-30
US14/280,245 US9644269B2 (en) 2014-01-30 2014-05-16 Diffusion resistant electrostatic clamp
US14/280,245 2014-05-16
PCT/US2015/013772 WO2015116930A1 (en) 2014-01-30 2015-01-30 Diffusion resistant electrostatic clamp

Publications (2)

Publication Number Publication Date
CN106233451A CN106233451A (zh) 2016-12-14
CN106233451B true CN106233451B (zh) 2020-06-30

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CN201580006538.6A Active CN106233451B (zh) 2014-01-30 2015-01-30 制造静电夹的方法、静电夹及静电夹系统

Country Status (6)

Country Link
US (2) US9644269B2 (enExample)
JP (1) JP6607859B2 (enExample)
KR (1) KR102258312B1 (enExample)
CN (1) CN106233451B (enExample)
TW (1) TWI697070B (enExample)
WO (1) WO2015116930A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9644269B2 (en) * 2014-01-30 2017-05-09 Varian Semiconductor Equipment Associates, Inc Diffusion resistant electrostatic clamp
US11031272B2 (en) * 2018-11-06 2021-06-08 Mikro Mesa Technology Co., Ltd. Micro device electrostatic chuck with diffusion blocking layer
EP3977207A1 (en) * 2019-05-29 2022-04-06 ASML Holding N.V. Split double sided wafer and reticle clamps
US11302536B2 (en) * 2019-10-18 2022-04-12 Applied Materials, Inc. Deflectable platens and associated methods
JP7744516B2 (ja) * 2021-10-28 2025-09-25 インテグリス・インコーポレーテッド 誘電体層を含む上部セラミック層を含む静電チャック、ならびに関連する方法および構造

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090161285A1 (en) * 2007-12-20 2009-06-25 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
US20100103584A1 (en) * 2008-10-28 2010-04-29 Jusung Engineering Co., Ltd. Electrostatic chucking apparatus and method for manufacturing the same
CN102047386A (zh) * 2008-06-03 2011-05-04 气体产品与化学公司 含硅薄膜的低温沉积

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPH07297268A (ja) 1993-12-27 1995-11-10 Shin Etsu Chem Co Ltd 静電チャック付セラミックスヒーター
JPH08288376A (ja) 1995-04-12 1996-11-01 Kobe Steel Ltd 半導体製造装置用静電チャック
JP3767719B2 (ja) 1997-10-30 2006-04-19 信越化学工業株式会社 静電吸着装置
JP2000216232A (ja) 1999-01-27 2000-08-04 Taiheiyo Cement Corp 静電チャックおよびその製造方法
JP2002082130A (ja) * 2000-09-06 2002-03-22 Hitachi Ltd 半導体素子検査装置及びその製造方法
JP4748927B2 (ja) 2003-03-25 2011-08-17 ローム株式会社 半導体装置
JP4307195B2 (ja) 2003-09-17 2009-08-05 京セラ株式会社 静電チャック
KR20070032050A (ko) * 2004-07-07 2007-03-20 제너럴 일렉트릭 캄파니 기판상의 보호 코팅 및 그의 제조 방법
US7446284B2 (en) * 2005-12-21 2008-11-04 Momentive Performance Materials Inc. Etch resistant wafer processing apparatus and method for producing the same
JP2007173596A (ja) * 2005-12-22 2007-07-05 Ngk Insulators Ltd 静電チャック
JP5062507B2 (ja) 2006-02-08 2012-10-31 学校法人早稲田大学 アルミナ膜とその製造方法並びに光学装置
US20070181065A1 (en) * 2006-02-09 2007-08-09 General Electric Company Etch resistant heater and assembly thereof
JP4728306B2 (ja) 2007-09-18 2011-07-20 トーカロ株式会社 静電チャック部材およびその製造方法
TWI475594B (zh) * 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US8968537B2 (en) 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
US9644269B2 (en) * 2014-01-30 2017-05-09 Varian Semiconductor Equipment Associates, Inc Diffusion resistant electrostatic clamp

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090161285A1 (en) * 2007-12-20 2009-06-25 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
CN102047386A (zh) * 2008-06-03 2011-05-04 气体产品与化学公司 含硅薄膜的低温沉积
US20100103584A1 (en) * 2008-10-28 2010-04-29 Jusung Engineering Co., Ltd. Electrostatic chucking apparatus and method for manufacturing the same

Also Published As

Publication number Publication date
JP6607859B2 (ja) 2019-11-20
US10385454B2 (en) 2019-08-20
TWI697070B (zh) 2020-06-21
US9644269B2 (en) 2017-05-09
US20150214087A1 (en) 2015-07-30
JP2017509147A (ja) 2017-03-30
US20170335460A1 (en) 2017-11-23
KR102258312B1 (ko) 2021-05-31
TW201535583A (zh) 2015-09-16
KR20160117436A (ko) 2016-10-10
CN106233451A (zh) 2016-12-14
WO2015116930A1 (en) 2015-08-06

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