CN106104779B - 功率用半导体装置 - Google Patents

功率用半导体装置 Download PDF

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Publication number
CN106104779B
CN106104779B CN201580013957.2A CN201580013957A CN106104779B CN 106104779 B CN106104779 B CN 106104779B CN 201580013957 A CN201580013957 A CN 201580013957A CN 106104779 B CN106104779 B CN 106104779B
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Prior art keywords
power semiconductor
lead terminal
semiconductor device
electrode
inclined surface
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CN201580013957.2A
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Chinese (zh)
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CN106104779A (zh
Inventor
藤野纯司
石原三纪夫
新饲雅芳
原田启行
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to CN201910381937.0A priority Critical patent/CN110120375A/zh
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015178296A1 (ja) * 2014-05-20 2015-11-26 三菱電機株式会社 電力用半導体装置
DE202016101688U1 (de) * 2016-03-30 2016-04-21 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Schaltungsträger
JP6759784B2 (ja) * 2016-07-12 2020-09-23 三菱電機株式会社 半導体モジュール
JP6717103B2 (ja) * 2016-08-03 2020-07-01 株式会社豊田自動織機 半導体モジュール
JP6907670B2 (ja) * 2017-04-17 2021-07-21 三菱電機株式会社 半導体装置および半導体装置の製造方法
DE112017008277B4 (de) 2017-12-13 2025-03-13 Mitsubishi Electric Corporation Halbleitervorrichtung und leistungsumwandlungsvorrichtung
US10600725B2 (en) 2018-05-29 2020-03-24 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module having a grooved clip frame
US11056422B2 (en) * 2018-05-29 2021-07-06 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module
JP7091878B2 (ja) * 2018-06-22 2022-06-28 三菱電機株式会社 パワーモジュール、電力変換装置、及びパワーモジュールの製造方法
JP6457144B1 (ja) * 2018-09-19 2019-01-23 株式会社加藤電器製作所 半導体モジュール
JP7108567B2 (ja) * 2019-03-20 2022-07-28 株式会社東芝 パワーモジュール
CN111627864B (zh) * 2020-06-03 2022-06-07 西安卫光科技有限公司 一种高结温SiC陶瓷封装硅堆外壳结构
JP7489933B2 (ja) 2021-02-24 2024-05-24 三菱電機株式会社 半導体装置及びその製造方法
JP7604083B2 (ja) * 2021-08-18 2024-12-23 三菱電機株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013051295A (ja) * 2011-08-31 2013-03-14 Panasonic Corp 半導体装置及びその製造方法
WO2013111276A1 (ja) * 2012-01-25 2013-08-01 三菱電機株式会社 電力用半導体装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149432A (ja) * 1984-08-18 1986-03-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5110761A (en) * 1988-09-09 1992-05-05 Motorola, Inc. Formed top contact for non-flat semiconductor devices
US5798566A (en) * 1996-01-11 1998-08-25 Ngk Spark Plug Co., Ltd. Ceramic IC package base and ceramic cover
JPH11233671A (ja) * 1998-02-09 1999-08-27 Fuji Electric Co Ltd 半導体装置
JP2004095965A (ja) * 2002-09-02 2004-03-25 Sanken Electric Co Ltd 樹脂封止形半導体装置
JP2004111745A (ja) * 2002-09-19 2004-04-08 Toshiba Corp 半導体装置
US7239016B2 (en) 2003-10-09 2007-07-03 Denso Corporation Semiconductor device having heat radiation plate and bonding member
JP4339660B2 (ja) 2003-10-09 2009-10-07 株式会社デンソー 半導体装置
JP4334335B2 (ja) * 2003-12-24 2009-09-30 三洋電機株式会社 混成集積回路装置の製造方法
JP4492448B2 (ja) 2005-06-15 2010-06-30 株式会社日立製作所 半導体パワーモジュール
DE102005039940B4 (de) 2005-08-24 2009-07-02 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Bondverbindung der Leistungshalbleiterbauelemente
JP2007184525A (ja) 2005-12-07 2007-07-19 Mitsubishi Electric Corp 電子機器装置
JP4829690B2 (ja) 2006-06-09 2011-12-07 本田技研工業株式会社 半導体装置
EP2202792B1 (en) 2006-06-09 2016-11-23 Honda Motor Co., Ltd. Semiconductor device
JP2010050364A (ja) 2008-08-25 2010-03-04 Hitachi Ltd 半導体装置
JP5542567B2 (ja) * 2010-07-27 2014-07-09 三菱電機株式会社 半導体装置
JP5328740B2 (ja) 2010-10-04 2013-10-30 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2012084588A (ja) * 2010-10-07 2012-04-26 Toyota Industries Corp 電子部品における電極の接続構造
WO2012144070A1 (ja) * 2011-04-22 2012-10-26 三菱電機株式会社 半導体装置
KR20130026683A (ko) * 2011-09-06 2013-03-14 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
JP5676413B2 (ja) 2011-10-28 2015-02-25 三菱電機株式会社 電力用半導体装置
JP5734216B2 (ja) * 2012-02-01 2015-06-17 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
WO2015178296A1 (ja) * 2014-05-20 2015-11-26 三菱電機株式会社 電力用半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013051295A (ja) * 2011-08-31 2013-03-14 Panasonic Corp 半導体装置及びその製造方法
WO2013111276A1 (ja) * 2012-01-25 2013-08-01 三菱電機株式会社 電力用半導体装置

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