CN106057962A - 叠堆状的光耦合器组件 - Google Patents

叠堆状的光耦合器组件 Download PDF

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CN106057962A
CN106057962A CN201610243774.6A CN201610243774A CN106057962A CN 106057962 A CN106057962 A CN 106057962A CN 201610243774 A CN201610243774 A CN 201610243774A CN 106057962 A CN106057962 A CN 106057962A
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W·古特
D·富尔曼
C·瓦赫特
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Azur Space Solar Power GmbH
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Abstract

一种叠堆状的光耦合器组件，其具有发射组件和接收组件以及板状电绝缘体，发射组件具有发射区域，接收组件具有接收区域，绝缘体构造在发射组件和接收组件之间，发射组件和接收组件以及板状电绝缘体叠堆状地彼此重叠地布置，发射组件和接收组件在电方面彼此分离然而在光方面彼此耦合，绝缘体对于发射组件的发射波长透明，发射组件的光主要通过绝缘体作用到接收组件上，接收组件具有N个相互串联的部分电压源，其中N是自然数，单个部分电压源的部分电压彼此的偏差小于20％，部分电压源中的每一个具有半导体二极管，半导体二极管具有p‑n结，在各两个相继的部分电压源之间构造有隧道二极管，部分电压源和隧道二极管一起单片式地集成。

Description

叠堆状的光耦合器组件
技术领域
本分明涉及一种叠堆状的光耦合器组件。
背景技术
由DE 100 11 258 A1、US 2014 004 234 4 A1、US 2014 021 208 5 A1、DE 33 17 054 A1、US 2006 006 095 5 A1、US 4 127 862、DE 3 633 181 A1和US 4 996 577已知不同的光耦合器组件。
发明内容
在这种背景下本发明的任务在于，说明一种扩展现有技术的设备。
所述任务通过具有权利要求1的特征的叠堆状的光耦合器组件来解决。本发明的有利构型是从属权利要求的主题。
根据本发明的主题，提供一种叠堆状的光耦合器组件，所述光耦合器组件具有：具有发射区域的发射组件，其中所述发射区域具有表面；以及具有接收区域的接收组件，其中所述接收区域具有表面；以及板状的电绝缘体，其中所述绝缘体构造在发射组件和接收组件之间，所述发射组件和所述接收组件以及所述绝缘体叠堆状地彼此重叠地布置并且所述绝缘体具有上侧和下侧。所述发射组件和所述接收组件在电方面彼此分离然而在光学方面彼此耦合，其中所述绝缘体至少对于所述发射组件的发射波长的一部分透明，并且所述发射区域的表面的重心线(Schwerelinie)和接收区域的表面的重心线基本上或精确地相互平行，两个重心线之间的错位小于相应的重心线与发射区域的表面的外棱边或与接收区域的表面的外棱边的距离的一半或十分之一或五十分之一，从而发射组件的光主要或仅仅通过绝缘体作用到接收组件上或作用到接收区域的表面上并且作用到接收区域上，并且绝缘体在所有侧上从叠堆凸台状地凸出，并且接收组件具有N个相互串联的部分电压源，其中N是自然数并且N≥2，各个部分电压源的部分电压彼此的偏差小于20％，并且部分电压源中的每一个具有半导体二极管，所述半导体二极管具有p-n结，并且在各两个相继的部分电压源之间构造有隧道二极管，其中部分电压源和隧道二极管一起单片式地集成。
要注意的是，术语“表面的重心线”在此理解为所述表面在表面重心的位置处的法线。换言之，如果两个表面的重心线平行，则分别对应的面也彼此平行，其中在此所述表面视为平的或至少视为几乎平的。如果在此在两个彼此平行的重心线之间不存在间距，则朝叠堆方向看两个面重心准确重叠地布置。特别地，表面四边形地、优选正方形地并且最优选矩形地构造。要注意的是，术语“表面”在此优选是尤其没有接触系统或金属化的平的表面。
也不言而喻的是，借助半导体二极管的p-n结来分离借助光的入射产生的电子空穴对，并且因此产生相应的部分电压，由此所述部分电压总是电化学的电势差。优选地，也可以在p层和n层之间布置本征掺杂层。
也要注意的是，术语“板状”理解为具有优选两个平行的且分别平的板面的板，其中所述平的面构造在板的上侧和下侧上。
D1至D4。二极管D1至D4具有没有示出的p-n结。在各两个相继的部分电压源之间分别布置有隧道二极管TD1至TD3。部分电压源和隧道二极管TD1至TD3一起单片式地集成。
此外，发射组件和接收组件以所谓“模具(Dies)”的形式存在，即作为没有封装的组件。发射组件除发射区域以外还具有背侧，并且接收组件除接收区域以外还具有背侧。换言之，发射组件和接收组件作为模具优选分别直接布置在绝缘体上方或绝缘体下方。总而言之，整个叠堆优选作为没有封装的组件存在。此外要注意的是，数量N优选等于四。
不言而喻，术语“透明”应理解为至少在发射波长的范围中小的吸收度。优选地，吸收度相对于入射强度小于20％或小于10％，最优选小于5％。
此外不言而喻，在接收组件中、更确切地说在接收区域中，半导体二极管彼此具有基本上相同的或精确相同的半导体层顺序，所述半导体层具有相同的或基本上相同的半导体材料，并且通过二极管的串联连接所述接收组件的总电压是部分电压的和。由此，能够通过简单的方式实现相应的半导体二极管的几乎相同的部分电压。优选地，部分电压在叠堆的任意两个半导体二极管之间偏差小于10％。此外要注意的是，随着单个二极管与绝缘体的间距的增大，吸收区域的厚度、对此各个二极管的总厚度强烈地、优选指数地增大。
一个优点是，通过在接收组件中多个单片二极管的新式的叠堆状布置以及高的光敏感度能够制造非常紧凑且小的光耦合器组件。尤其能够实现所发射的光的直接耦合输入，即在透射的光到达接收组件之前，光以短的路径经过了绝缘体。
另一个优点是，接收组件除高的电压、优选高于2V、最优选高于4V以外也提供高的高于1mA/cm2、最优选高于100mA/cm2的电流。由此，可以实现高的高于10MHz、优选高于100MHz的切换速度(Schaltgeschwindigkeit)。
此外要注意的是，将发射区域直接与绝缘体的上侧连接并且将接收区域直接与绝缘体的下侧连接是有利的，使得发射区域面向接收区域。由此，所发射的光仅仅需要至接收面、即至接收区域的表面的最小路径。
在一种替代的实施中，发射组件的背侧与绝缘体的上侧连接并且接收组件的背侧与绝缘体的下侧连接。研究表明，在发射组件的背侧上构造衬底层并且在接收组件的背侧上构造衬底层时给出有利的叠堆状构造，换言之，所述两个衬底层在此直接彼此面向。借助衬底层的所述构造，可以提高相应的组件的机械稳定性并且实施组件的可靠接触。
在另一实施方式中，由发射组件和绝缘体和接收组件组成的叠堆集成在一个共同的壳体中。
在一种优选的扩展方案中，接收组件和发射组件沿着叠堆方向具有截棱锥状的构造，其中截棱锥的下侧与截棱锥的上侧之间的面积大小的差为至少5μm2。
在一种扩展方案中，发射区域的表面的大小与接收区域的表面的大小之间的差小于20％、优选小于10％。研究表明，有利的是，或者接收区域的表面与发射区域的表面同样大或者替代地比发射区域的表面大最多20％地实施接收区域的表面。
此外优选的是，发射区域的整个表面和或发射区域发射光并且接收区域的整个表面和接收区域全部吸收光。由此，可以增大光耦合器组件的效率。不言而喻，在通过发射区域的表面发射光时以接触金属遮盖尽可能小的面积。对于吸收的情形也不例外。在此，在通过接收区域的表面和在接收区域中吸收光时也适用以下：在接收区域的整个表面上以接触金属遮盖尽可能小的面积或面积份额。
在一种实施方式中，发射区域的表面和接收区域的表面具有四边形状，其中相应的四边形的最大边长小于2mm。在一种扩展方案中，发射区域的表面和接收区域的表面正方形地构造并且分别具有大于0.2×0.2mm2并且小于4mm2或小于1mm2的基本面积。
此外，当发射区域的表面和接收区域的表面分别具有带形的或栅格形的或小的具有小于整个表面的10％的份额的接触面或者具有完全平面的金属化时是有利的。此外，发射组件的背侧而且接收组件的背侧具有带形的接触面或栅格形的接触面或者具有小的具有分别小于整个表面的10％的份额的接触面或者具有完全平面的金属化。
在另一实施方式中，发射组件具有用于发射器的波长的光学镜或者具有RCLED或表面发射激光器。
研究表明，板状绝缘体优选包括塑料和/或玻璃和/或氧化铝和/或环氧树脂和/或硅酮或者由这种化合物组成。在此，也包括由不同的材料组成的多层构造。分别具有构造为透明硅酮粘接层的薄的连接层的所述两个组件、即发射组件和接收组件例如尤其可以力锁合地与薄的玻璃板连接。不言而喻，发射组件和接收组件与绝缘体也可以借助另外的连接材料和/或固定措施接合成一个叠堆。
在一种优选的扩展方案中，绝缘体的厚度小于0.5mm、优选小于0.3mm、然而大于50μm。在此不言而喻，如此选择绝缘体的厚度，使得确保发射组件与接收组件之间的绝缘强度(Durchschlagsfestigkeit)大于2kV。在此，当板状绝缘体在所有侧上从叠堆凸出至少5μm、即绝缘体构成环绕的凸台时是有利的，其中所述凸台凸出优选最大250μm。
在另一实施方式中，由发射组件和绝缘体和接收组件组成的叠堆的总厚度在没有封装的情况下小于3mm、优选小于2mm、最优选小于1.2mm、然而比0.2mm更厚。
为了提高发射组件与接收组件之间的耦合效率，有利的是，发射组件的发射波长等于接收组件的吸收棱边或者比接收组件的吸收棱边小最多10％。在另一构造中，发射组件和接收组件包括III-V族材料或由III-V族材料组成。接收组件尤其包括GaAs衬底和/或Ge衬底。接收组件优选包括(Al)GaAs和/或InGaP和/或InGaAs材料。要注意的是，括号中的元素、在此例如铝可以存在，但不必须存在。
以下参考附图详细阐述本发明。在此，借助相同的参考标记示出同种部件。所示出的实施方式是强烈示意性的，即间距以及横向和竖向延伸不是按比例的并且只要没有另外说明也不具有可导出的彼此的几何关系。
附图说明
图1：根据本发明的第一实施方式的具有区段放大的横截图；
图2：根据本发明的第二实施方式的横截图；
图3a：根据本发明的第三实施方式的横截图；
图3b：根据本发明的第四实施方式的具有衬底的横截图；
图4：接收组件的详细示图；
图5：已封装的实施方式的横截图；
具体实施方式
图1连同区段放大地示出叠堆状的光耦合器组件OPT的根据本发明的第一实施方式的横截图。光耦合器组件OPT包括具有发射区域SF的发射组件S和具有接收区域EF的接收组件E，所述发射区域具有表面，所述接收区域具有表面。区段放大示出接收区域EF的原理构造。在此，接收区域EF和接收组件E的面积大小与发射区域SF和发射组件S的面积大小相同。此外，光耦合器组件OPT包括板状电绝缘体IS，其中所述绝缘体IS构造在发射组件S和接收组件E之间。
总体上，发射组件S和接收组件E和绝缘体IS叠堆状地彼此重叠地布置并且相互力锁合地连接，其中发射组件S和接收组件E在电方面彼此分离然而在光方面彼此耦合。绝缘体IS至少对于发射组件S的发射波长透明。所述三个组件S、IS和E如此布置，使得发射区域SF的表面的重心线与接收区域EF的表面的重心线精确地相互平行并且所述两个重心线没有错位。发射组件S的光L通过绝缘体IS直接作用到接收组件E上。
在区段放大中，详细示出接收组件E的接收区域EF。在电子技术的考虑中，接收组件E具有四个相互串联连接的部分电压源。所述部分电压源中的每一个包括半导体二极管D1至D4。二极管D1至D4具有没有示出的p-n结。在各两个相继的部分电压源之间分别布置有隧道二极管TD1至TD3。部分电压源和隧道二极管TD1至TD3一起单片式地集成。在通过发射组件S的照射时，接收组件E产生高于2V的总电压，其中叠堆的各个二极管几乎产生相等的部分电压。
在图2的示图中示出光耦合器组件OPT的根据本发明的第二实施方式的横截图。以下，仅仅阐述与在图1的示图中示出的实施方式的不同。板状绝缘体IS的面积大于发射组件S的面积并且大于接收组件E的面积，从而绝缘体IS环绕地凸台状地从叠堆凸出。一方面在绝缘体IS与发射组件S之间并且在绝缘体IS与接收组件E之间分别构造有透明的连接层KL。借助所述连接层KL，接收组件E和发射组件S力锁合地与绝缘体IS连接成一个叠堆。
在图3a的示图中示出光耦合器组件OPT的根据本发明的第三实施方式的横截图。以下，仅仅阐述与在图1和图2的示图中示出的实施方式的不同。发射组件S除发射区域SF以外包括衬底层SUBS。接收组件E除接收区域EF以外包括衬底层SUBE。两个衬底层SUBS和SUBE构造为载体层。在两个衬底层SUBS与SUBE之间布置有发射区域SF和接收区域EF。在板状绝缘体IS的上侧和下侧上分别构造有同样透明的连接层KL。连接层KL比0.2mm更薄、优选比0.02mm更薄并且将绝缘体的上侧与发射区域SF材料锁合地连接并且将绝缘体的下侧与接收区域材料锁合地连接。所述布置的优点是，发射区域SF的光L直接通过绝缘体IS到达接收区域EF。
在图3b的示图中示出光耦合器组件OPT的根据本发明的第四实施方式的横截图。以下，仅仅阐述与在图3a的示图中示出的实施方式的不同。在发射区域SF和绝缘体IS之间布置有衬底层SUBS并且在接收区域EF和绝缘体IS之间布置有衬底层SUBE。在此，光L除绝缘体以外也经过所述两个衬底层SUBS和SUBE，以便在接收区域EF上被吸收。不言而喻，衬底层SUBS和SUBE具有在发射组件S的发射波长的区域中小的吸收度。
在图4的示图中示出作为光耦合器组件OPT的一部分的接收组件E的详细示图的横截图。以下，仅仅阐述与图1的实施方式的不同。二极管D1至D4的层厚度随着相应二极管与绝缘体IS的间距的增大连续增大，其中第四二极管D4具有最大层厚度。
在图5的示图中示出光耦合器组件OPT的已封装的实施方式的横截图。以下，仅仅阐述与以上实施方式的不同。由发射组件S和绝缘体IS和接收组件E组成的叠堆集成在一个共同的壳体G中。发射组件S具有第一电连接接触部KS1和第二电连接接触部KS2。接收组件E具有第一电连接接触部KE1和第二电连接接触部KE2。

Claims (17)

1.一种叠堆状的光耦合器组件(OPT)，其具有：
具有发射区域(SF)的发射组件(S)，其中，所述发射区域(SF)具有表面，
具有接收区域(EF)的接收组件(E)，其中，所述接收区域(EF)具有表面，
板状的电绝缘体(IS)，
其中，所述绝缘体(IS)构造在所述发射组件(S)和所述接收组件(E)之间，
所述发射组件(S)和所述接收组件(E)和所述绝缘体(IS)叠堆状地彼此重叠地布置，
所述发射组件(S)和所述接收组件(E)在电方面彼此分离、然而在光方面彼此耦合，其中，所述绝缘体(IS)至少对于所述发射区域(SF)的发射波长的一部分透明，
所述发射区域(SF)的表面的重心线和所述接收区域(EF)的表面的重心线基本上或精确地相互平行，
所述两个重心线之间的错位小于相应重心线与所述发射区域(SF)的表面的外棱边或者与所述接收区域(EF)的表面的外棱边的距离的一半或十分之一或五十分之一，从而所述发射组件(S)的光主要或仅仅通过所述绝缘体(IS)作用到所述接收组件(E)上，
所述绝缘体(IS)在所有侧上从所述叠堆凸台状地凸出，
所述接收组件(E)具有N个相互串联连接的部分电压源，其中，N是自然数且≥2，
各个部分电压源的部分电压彼此的偏差小于20％，
所述部分电压源中的每一个具有半导体二极管(D1，…，DN)，所述半导体二极管具有p-n结，
在各两个相继的部分电压源之间构造有隧道二极管(TD1，…，TDN-1)，
其中，所述部分电压源和所述隧道二极管(TD1，…，TDN-1)一起单片式地集成。
2.根据权利要求1所述的集成光耦合器(OPK)，其特征在于，所述发射区域(SF)的表面的大小与所述接收区域(EF)的表面的大小之间的差小于20％。
3.根据权利要求1或2所述的集成光耦合器(OPK)，其特征在于，所述发射区域(SF)的表面和所述接收区域(EF)的表面具有四边形状并且相应的四边形的最大边长小于2mm。
4.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，由发射组件(S)和绝缘体(IS)和接收组件(E)组成的叠堆集成在一个共同的壳体(G)中。
5.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述发射区域(SF)的表面与所述接收区域(EF)的表面同样大，并且除电连接区域以外整个发射区域(SF)发射光(L)并且整个接收区域(EF)吸收光(L)。
6.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述发射区域(SF)的表面和所述接收区域(EF)的表面是正方形的并且分别具有大于0.2×0.2mm2且小于4mm2或小于1mm2的基本面积。
7.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述发射组件(S)具有用于发射器的波长的光学镜或者具有RCLED或表面发射激光器。
8.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，板状的所述绝缘体(IS)由塑料和或由玻璃和或由氧化铝和或由环氧树脂和或由硅酮组成。
9.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述绝缘体(IS)在所有侧上从所述叠堆凸出至少5μm。
10.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述绝缘体(IS)的厚度小于0.5mm，然而最小是50μm。
11.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述发射区域(SF)的发射波长等于所述接收区域(EF)的吸收棱边或者比所述接收区域的吸收棱边小最多10％。
12.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述发射组件(S)和所述接收组件(E)由III-V族材料构造。
13.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述接收组件(E)包括GaAs衬底和/或者Ge衬底。
14.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述接收组件(E)包括(Al)GaAs和/或InGaP和/或InGaAs材料。
15.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述发射组件(S)和所述接收组件(E)沿着叠堆方向具有截棱锥状的构造，其中，所述截棱锥的下侧的面积大小与所述截棱锥的上侧的面积大小之间的差是至少5μm2。
16.根据以上权利要求中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述发射区域(SF)的表面直接布置在所述绝缘体(IS)的上侧上并且所述接收区域(EF)的表面直接布置在所述绝缘体(IS)的下侧上，从而所述发射区域(SF)的表面与所述接收区域(EF)的表面彼此面向。
17.根据权利要求1至15中任一项或多项所述的集成光耦合器(OPK)，其特征在于，所述发射组件(S)具有衬底层(SUBS)并且所述衬底层(SUBS)布置在所述绝缘体(IS)的上侧上，并且所述接收组件(E)具有衬底层(SUBE)并且所述衬底层(SUBE)布置在所述绝缘体(IS)的下侧上，从而所述两个衬底层(SUBS，SUBE)直接彼此面向。
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