CN110021677A - 光学电压源 - Google Patents

光学电压源 Download PDF

Info

Publication number
CN110021677A
CN110021677A CN201811530916.2A CN201811530916A CN110021677A CN 110021677 A CN110021677 A CN 110021677A CN 201811530916 A CN201811530916 A CN 201811530916A CN 110021677 A CN110021677 A CN 110021677A
Authority
CN
China
Prior art keywords
semiconductor diode
voltage source
output equipment
optical voltage
coupling output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201811530916.2A
Other languages
English (en)
Other versions
CN110021677B (zh
Inventor
G·凯勒
D·富尔曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azur Space Solar Power GmbH
Original Assignee
Azur Space Solar Power GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azur Space Solar Power GmbH filed Critical Azur Space Solar Power GmbH
Publication of CN110021677A publication Critical patent/CN110021677A/zh
Application granted granted Critical
Publication of CN110021677B publication Critical patent/CN110021677B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/28—Provision in measuring instruments for reference values, e.g. standard voltage, standard waveform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

本发明涉及一种光学电压源和一种耦合输出设备，该光学电压源具有数量N个彼此串联连接的半导体二极管(D1，DN)，该半导体二极管分别具有pn结，半导体二极管(D1，D2，DN)一起单片地集成并且共同构成第一堆叠(ST1)，该第一堆叠具有上侧和下侧，并且该第一堆叠(ST1)的半导体二极管的数量N大于等于2，所述耦合输出设备具有另外的半导体二极管(Dpin)，所述另外的半导体二极管具有pin结，所述另外的半导体二极管与第一堆叠的半导体二极管反向串联连接，另外的半导体二极管的下侧与所述第一堆叠的上侧材料锁合地连接，并且所述另外的半导体二极管与所述第一堆叠一起构成总堆叠(STG)。

Description

光学电压源
技术领域
本发明涉及一种光学电压源。
背景技术
为了在例如由于高压或爆炸危险导致的暴露周围环境中给传感器供电，已知的是：光学地传输能量并且例如借助光伏转换器转换成电能。为此，需要具有尽可能高的输出电压的光学电压源——例如由EP 2 983 213 A1所已知的那样的高压二极管。
由Arthur Christoph Poloczek的博士论文《Gestapelte PIN-Dioden undResonanztunneldioden in optoelektronischenhoherFunktionsdichte》(2011年第一版)公开一种具有高功能密度的光电接收器电路。
发明内容
在所述背景下，本发明的任务在于说明一种扩展现有技术的设备。
所述任务通过根据本发明的技术方案的一种光学电压源来解决。在说明书中描述了本发明的有利构型。
根据本发明的主题，提供一种光学电压源以及一种耦合输出设备。
所述光学电压源具有数量N个彼此串联连接的半导体二极管，这些半导体二极管分别具有pn结，其中，这些半导体二极管一起单片地集成并且共同构成具有上侧和下侧的第一堆叠。
第一堆叠的半导体二极管的数量N大于等于2。
耦合输出设备具有一个另外的半导体二极管，其中，所述另外的半导体二极管包括pin结。
所述另外的半导体二极管与第一堆叠的半导体二极管反向串联连接，其中，所述另外的半导体二极管的下侧与第一堆叠的上侧材料锁合地连接，并且所述另外的半导体二极管与第一堆叠一起构成共同的总堆叠。
应说明，第一堆叠的二极管一起构成所谓的多结光电二极管或高压二极管并且代表光学电压源。
因此，提供了一种光学的、电隔离的能量供给。第一堆叠的半导体二极管和/或所述另外的半导体二极管优选由III-V族半导体构成——特别优选由GaAs构成。
尤其III-V族半导体(例如GaAs)将具有合适波长的光非常高效地转换成电能。
所述另外的二极管也被称为PIN二极管或称为快速光电二极管。应说明，所述另外的二极管由多个堆叠状的半导体层构成并且构成第二堆叠。优选地，第一堆叠ST1和第二堆叠ST2单片地集成。
通过所述另外的二极管与第一堆叠的半导体二极管的反向串联连接，借助第一堆叠的或光学电压源的源电压将所述另外的二极管在截止方向上或反向上偏置。
借助反向偏置电压(即反向偏置)，使所述另外的半导体二极管的电容最小化，从而与第一堆叠或光学电压源相比，所述另外的二极管在工作点中具有特别低的电容。由此，能够实现光电二极管的快速数据传输或快速切换。
为了进行传输，将数据信号调制成用于功率传输的光学信号。替代地，借助特定波长来传输数据信号，其中，用于数据传输的特定波长与所有用于功率传输的波长不同。
因此，根据本发明将高压二极管作为高效的和电隔离的能量供给与用于(例如控制信号的)数据传输的快速功率二极管进行组合。
因此，根据本发明的这种组合的一个优点是：除了电隔离的功率传输以外，总设备还能够实现快速的数据传输。
在一种替代的实施方式中，所述另外的半导体二极管在垂直于第一堆叠的上侧的投影中覆盖第一堆叠的上侧的至多50％或至多30％或至多10％。
在一种扩展方案中，所述另外的半导体二极管具有至多10pF的电容。在此，电容值与运行电压相关。优选地，运行电压处于1伏至10伏的范围内——最优选2伏至5伏的范围内。
根据另一扩展方案，所述半导体二极管和所述另外的半导体二极管一起单片地集成。
在另一实施方式中，第一接通部(例如作为接通面)布置在第一堆叠的上侧上并且具有相对于所述另外的二极管的间距。优选地，第一接通部与所述另外的半导体二极管的阴极并且与邻接第一堆叠的上侧的半导体二极管的阴极能够导电地连接。
根据另一实施方式，第二接通部(例如作为接通面)布置在所述另外的二极管的上侧上。
在另一实施方式中，第三接通部(例如接通面)布置在第一堆叠的下侧上，或者，第一堆叠的下侧与载体衬底的上侧材料锁合地连接，并且第三接通部(例如接通面)布置在载体衬底的下侧上。
根据一种扩展方案，总堆叠包括载体衬底，其中，第一堆叠的下侧与载体衬底的上侧或者与完全覆盖载体衬底的上侧的能够导电的中间层材料锁合地连接。
优选地，载体衬底在垂直于第一堆叠的上侧的投影中构成围绕第一堆叠的环绕的边沿。换言之，通过该环绕的边沿构成带有台阶面的台阶。在另一扩展方案中，第三接通面布置在载体衬底的环绕的边沿上或台阶面上。
优选地，在载体衬底的下侧上构造有整面的接通层作为第三接通面。在一种扩展方案中，第三接通面与邻接第一堆叠的下侧的半导体二极管的阳极能够导电地连接。
在另一扩展方案中，在第一部分堆叠的分别两个彼此相继的半导体二极管之间构造有隧道二极管。
在一种实施方式中，第一堆叠(ST1)的至少两个半导体二极管(D1，D2，DN)具有相同的半导体层序列，其中，这两个半导体二极管(D1，D2，DN)的相应的彼此对应的层具有相同的化学计量。
在一种扩展方案中，所述另外的半导体二极管(Dpin)具有堆叠状布置的半导体层序列，其中，所述序列与所述第一堆叠的半导体二极管(D1，D2，DN)中的一个的半导体层序列相同或不相同。优选地，在相同的情况下，这两个半导体二极管(D1，D2，DN，DPIN)的分别彼此对应的层具有相同的化学计量。
在一种扩展方案中，所述另外的二极管具有高于250kHz的截止频率。优选地，该截止频率处于1MHz至1GHz之间的范围内，最优选地，该截止频率处于2MHz至100MHz的范围内。
附图说明
以下参照附图更详细地描述本发明。在此，相同类型的部分标注有相同的附图标记。所示出的实施方式是高度示意性的，也就是说，距离以及横向和纵向的延伸不是成比例的，并且只要未特别说明，则彼此也不具有可推导的几何关系。在此示出：
图1示出光学电压源和耦合输出设备的根据本发明的第一实施方式的电路图；
图2示出图1的电压源和耦合输出设备的根据本发明的第一实施方式的示意性剖视图；
图3示出图2的实施方式的示意性俯视图。
具体实施方式
图1的图像示意性示出光学电压源和耦合输出设备的第一实施方式的电路图。
光学电压源包括数量N个彼此串联连接的半导体二极管D1、D2至DN。半导体二极管D1、D2和DN构成第一堆叠ST1。在第一堆叠ST1上布置有第二堆叠ST2。第二堆叠ST2包括一个另外的半导体二极管DPIN。优选地，第一堆叠ST1和第二堆叠ST2单片地集成。
耦合输出设备包括所述另外的半导体二极管DPIN和RC环节，所述RC环节由电阻RD和电容器C构成并且用于截取数据信号Vdata。所述另外的半导体二极管DPIN通过第一电接通部K1相对于半导体二极管D1、D2至DN反向串联地连接，也就是说，所述另外的半导体二极管的阴极以及第一堆叠ST1的最上部的半导体二极管D1的阴极与第一接通点K1能够导电地连接。
第一堆叠ST1的最下部的半导体二极管DN的阳极与第三电接通部K3能够导电地连接。所述另外的半导体二极管Dpin的阳极通过第二电接通部K2和电阻RD与第三接通部K3能够导电地连接，由此，所述另外的半导体二极管Dpin通过光学电压源的源电压Vsup在截止方向上被偏置。
通过电容器C，在第二接通部K2上相对于第三接通部K3截取数据信号Vdata。
在图2的图像中示出作为集成构件的、光学电压源与耦合输出设备的一部分的第一实施方式。图3的图像示出根据图2的实施方式的集成构件的俯视图。以下仅阐述与图1的图像的区别。
N个彼此串联连接的半导体二极管D1、D2至DN构成第一堆叠ST1。在第一堆叠ST1的上侧上彼此间隔开地布置有另外的二极管Dpin以及作为接通部K1的接通面。所述另外的二极管Dpin以下侧与第一堆叠ST1的上侧材料锁合地连接并且与第一堆叠ST1一起构成总堆叠STG。在所述另外的二极管Dpin的上侧上布置有第二接通面K2。
第一堆叠ST1的下侧与载体衬底SUB的上侧材料锁合地连接，所述载体衬底作为总堆叠STG的另外的层，其中，载体衬底SUB在垂直于第一堆叠的上侧的投影中构成围绕第一堆叠ST1的环绕的边沿UR。能够导电的涂层作为第三接通部K3覆盖载体衬底SUB的下侧。
根据所述实施方式，图1中的其他部件(例如RC环节)在外部实现。

Claims (18)

1.一种光学电压源以及耦合输出设备，其中，
所述光学电压源具有数量N个彼此串联连接的半导体二极管(D1，DN)，所述半导体二极管分别具有pn结，
所述半导体二极管(D1，D2，DN)一起单片地集成并且共同构成第一堆叠(ST1)，所述第一堆叠具有上侧和下侧，
所述第一堆叠(ST1)的半导体二极管(D1，D2，DN)的数量N大于等于2，
其特征在于，
所述耦合输出设备具有第二堆叠(ST2)，所述第二堆叠具有一个另外的半导体二极管(Dpin)，
所述另外的半导体二极管(Dpin)具有pin结，
所述另外的半导体二极管(Dpin)与所述第一堆叠(ST1)的半导体二极管(D1，D2，DN)反向串联地连接，
所述另外的半导体二极管(Dpin)的下侧与所述第一堆叠(ST1)的上侧材料锁合地连接，
具有所述另外的半导体二极管(Dpin)的所述第二堆叠(ST2)与所述第一堆叠(ST1)一起构成总堆叠(STG)。
2.根据权利要求1所述的光学电压源以及耦合输出设备，其特征在于，所述另外的半导体二极管(Dpin)在垂直于所述第一堆叠(ST1)的上侧的投影中覆盖所述第一堆叠(ST1)的上侧的至多50％或至多30％或至多10％。
3.根据权利要求1或2所述的光学电压源以及耦合输出设备，其特征在于，所述另外的半导体二极管(Dpin)具有至多10pF的电容。
4.根据权利要求1至3中任一项所述的光学电压源以及耦合输出设备，其特征在于，所述半导体二极管(D1，D2，DN)和所述另外的半导体二极管(Dpin)一起单片地集成。
5.根据权利要求1至4中任一项所述的光学电压源以及耦合输出设备，其特征在于，第一电接通部(K1)布置在所述第一堆叠(ST1)的上侧上并且具有相对于所述另外的二极管(Dpin)的间距。
6.根据权利要求5所述的光学电压源以及耦合输出设备，其特征在于，所述第一电接通部(K1)与所述另外的半导体二极管(Dpin)的阴极并且与邻接所述第一堆叠(ST1)的上侧的半导体二极管(D1)的阴极能够导电地连接。
7.根据权利要求1至6中任一项所述的光学电压源以及耦合输出设备，其特征在于，在所述另外的半导体二极管(Dpin)的上侧上布置有第二接通部(K2)。
8.根据权利要求1至7中任一项所述的光学电压源以及耦合输出设备，其特征在于，在所述第一堆叠(ST1)的下侧上布置有第三接通面(K3)，或者，所述第一堆叠(ST1)的下侧与载体衬底(SUB)的上侧材料锁合地连接，并且第三接通部(K3)布置在所述载体衬底(SUB)的下侧上。
9.根据权利要求1至8中任一项所述的光学电压源以及耦合输出设备，其特征在于，所述总堆叠(STG)包括载体衬底(SUB)，其中，所述第一堆叠(ST1)的下侧与所述载体衬底(SUB)的上侧或者与完全覆盖所述载体衬底(SUB)的上侧的能够导电的中间层材料锁合地连接。
10.根据权利要求9所述的光学电压源以及耦合输出设备，其特征在于，所述载体衬底(SUB)在垂直于所述第一堆叠(ST1)的上侧的投影中构成围绕所述第一堆叠(ST1)的环绕的边沿(UR)。
11.根据权利要求10所述的光学电压源以及耦合输出设备，其特征在于，第三接通面布置在所述载体衬底(SUB)的环绕的边沿(UR)上。
12.根据权利要求8或11所述的光学电压源以及耦合输出设备，其特征在于，所述第三接通部(K3)与邻接所述第一堆叠(ST1)的下侧的半导体二极管(DN)的阳极能够导电地连接。
13.根据权利要求1至12中任一项所述的光学电压源以及耦合输出设备，其特征在于，所述第一堆叠(ST1)的半导体二极管(D1，D2，DN)和/或所述另外的半导体二极管(Dpin)包括III-V族半导体材料或者由III-V族半导体材料构成。
14.根据权利要求13所述的光学电压源以及耦合输出设备，其特征在于，所述III-V族半导体材料是GaAs。
15.根据权利要求1至14中任一项所述的光学电压源以及耦合输出设备，其特征在于，在所述第一堆叠(ST1)的分别两个彼此相继的半导体二极管(D1，D2，DN)之间构造有隧道二极管。
16.根据权利要求1至15中任一项所述的光学电压源以及耦合输出设备，其特征在于，所述第一堆叠(ST1)的至少两个半导体二极管(D1，D2，DN)具有相同的半导体层序列，其中，这两个半导体二极管(D1，D2，DN)的相应的彼此对应的层具有相同的化学计量。
17.根据权利要求1至16中任一项所述的光学电压源以及耦合输出设备，其特征在于，所述另外的半导体二极管(Dpin)具有堆叠状布置的半导体层序列，并且所述序列与所述第一堆叠的半导体二极管(D1，D2，DN)中的一个的半导体层序列相同或不相同。
18.根据权利要求1至17中任一项所述的光学电压源以及耦合输出设备，其特征在于，所述另外的半导体二极管(Dpin)具有高于250kHz的截止频率。
CN201811530916.2A 2017-12-15 2018-12-14 光学电压源 Active CN110021677B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017011643.1 2017-12-15
DE102017011643.1A DE102017011643B4 (de) 2017-12-15 2017-12-15 Optische Spannungsquelle

Publications (2)

Publication Number Publication Date
CN110021677A true CN110021677A (zh) 2019-07-16
CN110021677B CN110021677B (zh) 2022-08-16

Family

ID=64664839

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811530916.2A Active CN110021677B (zh) 2017-12-15 2018-12-14 光学电压源

Country Status (4)

Country Link
US (1) US10600929B2 (zh)
EP (1) EP3499588B1 (zh)
CN (1) CN110021677B (zh)
DE (1) DE102017011643B4 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217265A1 (en) * 2003-03-04 2004-11-04 Serge Bulteau Optoelectronic device for meter optical detector module
EP2983213A1 (de) * 2014-08-08 2016-02-10 AZUR SPACE Solar Power GmbH Skalierbare Spannungsquelle
EP2983214A1 (de) * 2014-08-08 2016-02-10 AZUR SPACE Solar Power GmbH Optokoppler
US20160365470A1 (en) * 2015-06-12 2016-12-15 Azur Space Solar Power Gmbh Optocoupler
CN107039555A (zh) * 2015-09-19 2017-08-11 阿聚尔斯佩西太阳能有限责任公司 可调电压源

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4127862A (en) * 1977-09-06 1978-11-28 Bell Telephone Laboratories, Incorporated Integrated optical detectors
US4250516A (en) * 1979-08-06 1981-02-10 Bell Telephone Laboratories, Incorporated Multistage avalanche photodetector
GB2078440B (en) * 1980-03-31 1984-04-18 Nippon Telegraph & Telephone An optoelectronic switch
US5401953A (en) * 1993-09-23 1995-03-28 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Optically-switched submillimeter-wave oscillator and radiator having a switch-to-switch propagation delay
US5594237A (en) * 1995-02-24 1997-01-14 The Whitaker Corporation PIN detector having improved linear response
TW345751B (en) 1997-08-10 1998-11-21 Jenq-Shyong Shieh Thermovoltaic generator type solid-state switch a thermovoltaic generator type solid-state switch comprises a single crystal silicon substrate; an MOS field effect transistor; etc.
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
DE19962442A1 (de) 1999-12-22 2001-07-12 Micronas Gmbh Verfahren zum Herstellen einer optischen Sende- und Empfangseinrichtung und danach hergestellte optische Sende- und Empfanseinrichtung
DE10011258A1 (de) 2000-03-08 2001-09-20 Rossendorf Forschzent Integrierter Optokoppler und Verfahren zu seiner Herstellung
US6879014B2 (en) * 2000-03-20 2005-04-12 Aegis Semiconductor, Inc. Semitransparent optical detector including a polycrystalline layer and method of making
US6453105B1 (en) * 2000-10-04 2002-09-17 Agere Systems Guardian Corp Optoelectronic device with power monitoring tap
TWI288435B (en) * 2000-11-21 2007-10-11 Matsushita Electric Ind Co Ltd Semiconductor device and equipment for communication system
FR2832512B1 (fr) * 2001-11-16 2004-01-02 Atmel Grenoble Sa Composant de filtrage optique accordable
US6999670B1 (en) * 2002-08-27 2006-02-14 Luxtera, Inc. Active waveguides for optoelectronic devices
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
US7187813B2 (en) * 2005-01-20 2007-03-06 Intel Corporation Optical transistor
WO2007048108A2 (en) * 2005-10-19 2007-04-26 University Of Notre Dame Du Lac Monolithically-pumped erbium-doped waveguide amplifiers and lasers
US8742251B2 (en) 2006-12-20 2014-06-03 Jds Uniphase Corporation Multi-segment photovoltaic power converter with a center portion
JP2012510717A (ja) * 2008-12-02 2012-05-10 クイック，ナサニエル，アール． エネルギー変換装置
CN201393213Y (zh) * 2009-03-31 2010-01-27 比亚迪股份有限公司 继电器
US20120007102A1 (en) * 2010-07-08 2012-01-12 Soraa, Inc. High Voltage Device and Method for Optical Devices
US20120313201A1 (en) * 2011-06-13 2012-12-13 Intersil Americas LLC Optical sensor devices including front-end-of-line (feol) optical filters and methods for fabricating optical sensor devices
US9726818B1 (en) * 2013-05-30 2017-08-08 Hrl Laboratories, Llc Multi-wavelength band optical phase and amplitude controller
US10388817B2 (en) * 2013-12-09 2019-08-20 Avago Technologies International Sales Pte. Limited Transducer to convert optical energy to electrical energy
US9673343B2 (en) * 2013-12-09 2017-06-06 Azastra Opto Inc. Transducer to convert optical energy to electrical energy
EP3082169A1 (de) * 2015-04-17 2016-10-19 AZUR SPACE Solar Power GmbH Stapelförmiger optokopplerbaustein
DE102015006379B4 (de) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
US10403778B2 (en) * 2015-10-19 2019-09-03 Solaero Technologies Corp. Multijunction solar cell assembly for space applications
US10361330B2 (en) * 2015-10-19 2019-07-23 Solaero Technologies Corp. Multijunction solar cell assemblies for space applications
DE102015013514B4 (de) * 2015-10-20 2024-04-18 Azur Space Solar Power Gmbh Optischer Empfängerbaustein
US9806112B1 (en) * 2016-05-02 2017-10-31 Huawei Technologies Co., Ltd. Electrostatic discharge guard structure
IL246796B (en) * 2016-07-14 2020-05-31 Semi Conductor Devices An Elbit Systems Rafael Partnership Two-color light sensor and method
DE102016013749A1 (de) * 2016-11-18 2018-05-24 Azur Space Solar Power Gmbh Stapelförmige Halbleiterstruktur
DE102017007683B4 (de) * 2017-08-16 2020-05-07 Azur Space Solar Power Gmbh Empfängerbaustein

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217265A1 (en) * 2003-03-04 2004-11-04 Serge Bulteau Optoelectronic device for meter optical detector module
EP2983213A1 (de) * 2014-08-08 2016-02-10 AZUR SPACE Solar Power GmbH Skalierbare Spannungsquelle
EP2983214A1 (de) * 2014-08-08 2016-02-10 AZUR SPACE Solar Power GmbH Optokoppler
US20160365470A1 (en) * 2015-06-12 2016-12-15 Azur Space Solar Power Gmbh Optocoupler
CN106252342A (zh) * 2015-06-12 2016-12-21 阿聚尔斯佩西太阳能有限责任公司 光电耦合器
CN107039555A (zh) * 2015-09-19 2017-08-11 阿聚尔斯佩西太阳能有限责任公司 可调电压源

Also Published As

Publication number Publication date
DE102017011643B4 (de) 2020-05-14
EP3499588B1 (de) 2019-11-20
DE102017011643A1 (de) 2019-06-19
CN110021677B (zh) 2022-08-16
US10600929B2 (en) 2020-03-24
EP3499588A1 (de) 2019-06-19
US20190189825A1 (en) 2019-06-20

Similar Documents

Publication Publication Date Title
CN100468798C (zh) 具有有源区的半导体结构
US10038029B2 (en) Light-emitting device
US9543464B2 (en) Method of making a light emitting device and a light emitting device made thereof
US9972735B2 (en) Optocoupler having a semiconductor diode for each voltage source and a tunnel diode formed between each two successive voltage sources
US9947847B2 (en) Optoelectronic semiconductor chip and optoelectronic module
US10276490B2 (en) Isolation devices with faraday shields
CN106057962B (zh) 叠堆状的光耦合器组件
KR20080087251A (ko) 커패시터를 구비하는 발광 다이오드
US10490719B2 (en) Die bond pad design to enable different electrical configurations
CN110021677A (zh) 光学电压源
TW201733148A (zh) 接收器模組
CN106847809B (zh) 用于片上集成的整流桥结构
US9147782B2 (en) Optoelectronic transmission system and method
TWI849527B (zh) 光電裝置
TW202333428A (zh) 光電裝置
KR101381986B1 (ko) 커패시터를 구비하는 발광 다이오드
CN103633231B (zh) 半导体发光装置
KR20170064503A (ko) 고전압 구동 발광소자 및 그 제조 방법
CN109427825A (zh) 接收器模块
TW202333372A (zh) 光電裝置
KR20170119193A (ko) 복수의 발광셀들을 갖는 발광 다이오드
KR20180031416A (ko) 반도체 소자

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant