TW201703271A - 堆疊狀光耦合器組件 - Google Patents

堆疊狀光耦合器組件 Download PDF

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TW201703271A
TW201703271A TW105111902A TW105111902A TW201703271A TW 201703271 A TW201703271 A TW 201703271A TW 105111902 A TW105111902 A TW 105111902A TW 105111902 A TW105111902 A TW 105111902A TW 201703271 A TW201703271 A TW 201703271A
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沃夫岡 古特
丹尼爾 福爾曼
克萊門 瓦奇特
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艾澤太空太陽能公司
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Abstract

一種堆疊狀光耦合器組件，其具有發射組件及接收組件以及板狀電絕緣體，發射組件具有發射區域，接收組件具有接收區域，絕緣體建構在發射組件與接收組件之間，發射組件及接收組件以及板狀電絕緣體堆疊狀地彼此重疊地配置，發射組件及接收組件在電方面彼此分離然而在光方面彼此耦合，絕緣體對於發射組件之發射波長透明，發射組件之光主要藉由絕緣體作用至接收組件上，接收組件具有N個相互串聯的部分電壓源，其中N為自然數，單個部分電壓源之部分電壓彼此的偏差小於20%，部分電壓源中之每一者具有半導體二極體，半導體二極體具有p-n結，在各兩個連續之部分電壓源之間建構有隧道二極體，部分電壓源及隧道二極體一起單片式地整合。

Description

堆疊狀光耦合器組件
本分明係關於一種堆疊狀光耦合器組件。
由DE 100 11 258 A1、US 2014 004 234 4 A1、US 2014 021 208 5 A1、DE 33 17 054 A1、US 2006 006 095 5 A1、US 4 127 862、DE 3 633 181 A1及US 4 996 577已知不同的光耦合器組件。
在這種背景下本發明之任務在於，說明一種擴展現有技術之設備。
該任務藉由具有請求項1之特徵的堆疊狀光耦合器組件來解決。本發明之有利構型為附屬項之標的物。
根據本發明之標的物，提供一種堆疊狀光耦合器組件，該光耦合器組件具有：具有發射區域之發射組件，其中該發射區域具有表面；以及具有接收區域之接收組件，其中該接收區域具有表面；以及板狀電絕緣體，其中該絕緣體建構在發射組件與接收組件之間，該發射組件及該接收組件以及該絕緣體堆疊狀地彼此重疊地配置並且該絕緣體具有上側及下側。該發射組件及該接收組件在電方面彼此分離然而在光學方面彼此耦合，其中該絕緣體至少對於該發射組件之發射波長之一部分透明，並且該發射區域之表面的重心線(Schwerelinie)及接收區域之表面的重心線基本上或精確地相互平行，兩個重心線之間的 位錯小於相應的重心線與發射區域之表面之外棱邊或與接收區域之表面之外棱邊的距離的一半或十分之一或五十分之一，從而發射組件之光主要或僅僅藉由絕緣體作用至接收組件上或作用至接收區域之表面上並且作用至接收區域上，並且絕緣體在所有側上自堆疊凸台狀地凸出，並且接收組件具有N個相互串聯的部分電壓源，其中N為自然數並且N2，各個部分電壓源之部分電壓彼此的偏差小於20%，並且部分電壓源中之每一者具有半導體二極體，該等半導體二極體具有p-n結，並且在各兩個連續的部分電壓源之間建構有隧道二極體，其中部分電壓源及隧道二極體一起單片式地整合。
應注意，表面之重心線的概念在此理解為在表面重心之位置處表面的法線。換言之，兩個表面之重心線平行，分別分配的面亦彼此平行，其中在此表面視為平的或至少視為幾乎平的。若在此在兩個彼此平行的重心線之間不存在間距，那麼朝堆疊方向看兩個面重心準確重疊地配置。特定而言，表面四邊形地、較佳正方形地並且最佳矩形地建構。應注意，表面的概念在此尤其在未接觸系統或金屬化之情況下較佳係關於平的表面。
亦不言而喻，藉助於半導體二極體之p-n結來分離藉助於光的入射產生之電子電洞對並且因此產生相應的部分電壓，由此該部分電壓總為電化學的電位差。較佳地，亦可以在p層與n層之間配置內在摻雜層。
亦應注意，概念「板狀」理解為具有較佳兩個平行的且分別平的板面的板，其中該平的面建構在板之上側及下側上。
D1至D4。二極體D1至D4具有未展示之p-n結。在各兩個連續的部分電壓源之間分別配置有隧道二極體TD1至TD3。部分電壓源及隧道二極體TD1至TD3一起單片式地整合。
此外，發射組件及接收組件以所謂「晶粒(Die)」之形式存在， 即作為未封裝之組件。發射組件除發射區域以外亦具有背側並且接收組件除接收區域以外亦具有背側。換言之，發射組件及接收組件作為晶粒較佳分別直接配置在絕緣體上方或絕緣體下方。總而言之，整個堆疊較佳作為未封裝之組件存在。此外，應注意，數目N較佳等於四。
不言而喻，概念「透明」應理解為至少在發射波長之區域中小的吸收度。較佳地，相對於入射強度之吸收度小於20%或小於10%，最佳小於5%。
此外，不言而喻，在接收組件中、更確切而言在接收區域中，半導體二極體重疊地具有半導體層的基本上相同的或精確相同的序列，半導體層具有相同的或基本上相同的半導體材料，並且藉由二極體的串聯連接該接收組件之總電壓為部分電壓之和。由此，能夠藉由簡單的方式實現相應的半導體二極體之幾乎相同的部分電壓。較佳地，部分電壓在堆疊的任何兩個半導體二極體之間偏差小於10%。此外，應注意，隨著單個二極體與絕緣體之間距的增大，吸收區域之厚度、對此各個二極體之總厚度強烈地、較佳指數地增大。
一個優點為，藉由在接收組件中多個單片二極體之新式的堆疊狀配置以及高光敏感度能夠製造非常緊湊且小的光耦合器組件。尤其能夠實現所發射之光的直接耦合輸入，即在透射之光到達接收組件之前，光已經經過了穿過絕緣體之短的路徑。
另一個優點為，接收組件除高電壓、較佳高於2V、最佳高於4V以外亦提供高的高於1mA/cm2、最佳高於100mA/cm2之電流。由此，可以實現高的高於10MHz、較佳高於100MHz之切換速度(Schaltgeschwindigkeit)。
此外，應注意，將發射區域直接與絕緣體之上側連接並且將接收區域直接與絕緣體之下側連接為有利的，使得發射區域面向接收區 域。由此，所發射之光僅僅需要至接收面、即至接收區域之表面之最小路徑。
在一種替代的實施中，發射組件之背側與絕緣體之上側連接並且接收組件之背側與絕緣體之下側連接。研究表明，在發射組件之背側上建構基板層並且在接收組件之背側上建構基板層時給出有利的堆疊狀構造，換言之，該兩個基板層在此直接彼此面向。藉助於基板層之該構造，可以提高相應的組件之機械穩定性並且實施組件的可靠接觸。
在另一實施方式中，由發射組件及絕緣體及接收組件組成的堆疊整合在一個共同的機殼中。
在一種較佳的擴展方案中，接收組件及發射組件沿著堆疊方向具有截棱錐狀構造，其中截棱錐之下側與截棱錐之上側之間的面積大小的差為至少5μm2。
在一種擴展方案中，發射區域之表面的大小與接收區域之表面的大小之間的差小於20%、較佳小於10%。研究表明，有利地，或者接收區域之表面與發射區域之表面同樣大或者替代地比發射區域之表面大最多20%地實施接收區域之表面。
此外，較佳地，發射區域之整個表面及或發射區域發射光並且接收區域之整個表面及接收區域全部吸收光。由此，可以增大光耦合器組件之效率。不言而喻，在藉由發射區域之表面發射光時以接觸金屬罩蓋儘可能小的面積。對於吸收之情形亦不例外。在此，在藉由接收區域之表面及在接收區域中吸收光時亦適用以下：在接收區域之整個表面上以接觸金屬罩蓋儘可能小的面積或面積份額。
在一種實施方式中，發射區域之表面及接收區域之表面具有四邊形狀，其中相應的四邊形之最大邊長小於2mm。在一種擴展方案中，發射區域之表面及接收區域之表面正方形地建構並且分別具有大 於0.2×0.2mm2並且小於4mm2或小於1mm2之基本面積。
此外，當發射區域之表面及接收區域之表面分別具有帶形的或柵格形的或小的具有小於整個表面之10%的份額之接觸面或者具有完全平面的金屬化時為有利的。此外，發射組件之背側而且接收組件之背側具有帶形的接觸面或柵格形的接觸面或者具有小的具有分別小於整個表面的10%的份額之接觸面或者具有完全平面的金屬化。
在另一實施方式中，發射組件具有用於發射器之波長的光學鏡或者具有RCLED或表面發射雷射器。
研究表明，板狀絕緣體較佳包括塑膠及/或玻璃及/或二氧化鋁及/或環氧樹脂及/或聚矽氧或者由這種化合物組成。在此，亦包括由不同的材料組成之多層構造。分別具有建構為透明聚矽氧黏著層之薄的連接層的該兩個組件、即發射組件及接收組件，例如尤其可以力鎖合地與薄的玻璃板連接。不言而喻，發射組件及接收組件與絕緣體亦可藉助於另外的連接材料及/或固定措施接合成一個堆疊。
在一種較佳的擴展方案中，絕緣體之厚度小於0.5mm、較佳小於0.3mm、然而大於50μm。在此不言而喻，如此選擇絕緣體之厚度，使得確保發射組件與接收組件之間的絕緣強度(Durchschlagsfestigkeit)大於2kV。在此，當板狀絕緣體在所有側上自堆疊凸出至少5μm、即絕緣體構成環繞的凸台時為有利的，其中該凸台凸出較佳最大250μm。
在另一實施方式中，由發射組件及絕緣體及接收組件組成的堆疊之總厚度在未封裝之情況下小於3mm、較佳小於2mm、最佳小於1.2mm、然而比0.2mm更厚。
為了提高發射組件與接收組件之間的耦合效率，有利地，發射組件之發射波長等於接收組件之吸收棱邊或者比接收組件之吸收棱邊小最多10%。在另一構造中，發射組件及接收組件包括III-V族材料或 由III-V族材料組成。接收組件尤其包括GaAs基板及/或Ge基板。接收組件較佳包括(Al)GaAs及/或InGaP及/或InGaAs材料。應注意，括號中之元素、在此例如鋁可以存在，但不必須存在。
以下參考附圖詳細闡述本發明。在此，藉助於相同的參考標記展示同種部件。所展示之實施方式為強烈示意性的，即間距以及橫向及豎向延伸並非按比例的，並且只要未另外說明亦不具有可導出的彼此的幾何關係。
D1~D4‧‧‧半導體二極體/二極體
D4‧‧‧第四二極體
E‧‧‧接收組件
EF‧‧‧接收區域
G‧‧‧機殼
IS‧‧‧板狀電絕緣體/絕緣體
KE1‧‧‧第一電連接接觸部
KE2‧‧‧第二電連接接觸部
KL‧‧‧連接層
KS1‧‧‧第一電連接接觸部
KS2‧‧‧第二電連接接觸部
L‧‧‧光
OPT‧‧‧堆疊狀光耦合器組件/光耦合器組件
S‧‧‧發射組件
SF‧‧‧發射區域
SUBE‧‧‧基板層
SUBS‧‧‧基板層
TD1~TD3‧‧‧隧道二極體
圖1：根據本發明之第一實施方式的具有區段放大的橫截面圖；圖2：根據本發明之第二實施方式的橫截面圖；圖3a：根據本發明之第三實施方式的橫截面圖；圖3b：根據本發明之第四實施方式的具有基板的橫截面圖；圖4：接收組件的詳細示圖；圖5：已封裝之實施方式的橫截面圖；
圖1連同區段放大地展示堆疊狀光耦合器組件OPT的根據本發明之第一實施方式的橫截面圖。光耦合器組件OPT包括具有發射區域SF之發射組件S及具有接收區域EF之接收組件E，該發射區域具有表面，該接收區域具有表面。區段放大展示接收區域EF之原理構造。在此，接收區域EF及接收組件E之面積大小與發射區域SF及發射組件S之面積大小相同。此外，光耦合器組件OPT包括板狀電絕緣體IS，其中該絕緣體IS建構在發射組件S與接收組件E之間。
總體上，發射組件S及接收組件E及絕緣體IS堆疊狀地彼此重疊地配置並且相互力鎖合地連接，其中發射組件S及接收組件E在電方面彼此分離然而在光方面彼此耦合。絕緣體IS至少對於發射組件S之發射波長透明。該等三個組件S、IS及E如此配置，使得發射區域SF 之表面的重心線與接收區域EF之表面的重心線精確地相互平行並且該兩個重心線未位錯。發射組件S之光L藉由絕緣體IS直接作用至接收組件E上。
在區段放大中，詳細展示接收組件E之接收區域EF。在電子技術的考慮中，接收組件E具有四個相互串聯連接之部分電壓源。該等部分電壓源中之每一者包括半導體二極體D1至D4。二極體D1至D4具有未展示之p-n結。在各兩個連續的部分電壓源之間分別配置有隧道二極體TD1至TD3。部分電壓源及隧道二極體TD1至TD3一起單片式地整合。在藉由發射組件S之照射時，接收組件E產生高於2V之總電壓，其中堆疊的各個二極體幾乎產生相等的部分電壓。
在圖2之示圖中展示光耦合器組件OPT的根據本發明之第二實施方式的橫截面圖。在下文中，僅僅闡述與在圖1之示圖中展示之實施方式的不同。板狀絕緣體IS之面積大於發射組件S之面積並且大於接收組件E之面積，從而絕緣體IS環繞地凸台狀地自堆疊凸出。一方面在絕緣體IS與發射組件S之間並且在絕緣體IS與接收組件E之間分別建構有透明的連接層KL。藉助於連接層KL，接收組件E及發射組件S力鎖合地與絕緣體IS連接成一個堆疊。
在圖3a之示圖中展示光耦合器組件OPT的根據本發明之第三實施方式的橫截面圖。在下文中，僅僅闡述與在圖1及圖2之示圖中展示之實施方式的不同。發射組件S除發射區域SF以外包括基板層SUBS。接收組件E除接收區域EF以外包括基板層SUBE。兩個基板層SUBS及SUBE建構為載體層。在兩個基板層SUBS與SUBE之間配置有發射區域SF及接收區域EF。在板狀絕緣體IS之上側及下側上分別建構有同樣透明的連接層KL。連接層KL比0.2mm更薄、較佳比0.02mm更薄並且將絕緣體之上側與發射區域SF材料鎖合地連接並且將絕緣體之下側與接收區域材料鎖合地連接。該配置之優點為，發射區域SF之光L 直接藉由絕緣體IS到達接收區域EF。
在圖3b之示圖中展示光耦合器組件OPT的根據本發明之第四實施方式的橫截面圖。在下文中，僅僅闡述與在圖3a之示圖中展示之實施方式的不同。在發射區域SF與絕緣體IS之間配置有基板層SUBS並且在接收區域EF與絕緣體IS之間配置有基板層SUBE。在此，光L除絕緣體以外亦經過該兩個基板層SUBS及SUBE，以便在接收區域EF上被吸收。不言而喻，基板層SUBS及SUBE具有在發射組件S之發射波長之區域中小的吸收度。
在圖4之示圖中展示作為光耦合器組件OPT之一部分之接收組件E的詳細示圖的橫截面圖。在下文中，僅僅闡述與圖1之實施方式的不同。二極體D1至D4之層厚度隨著相應二極體與絕緣體IS之間距的增大連續增大，其中第四二極體D4具有最大層厚度。
在圖5之示圖中展示光耦合器組件OPT的已封裝之實施方式的橫截面圖。在下文中，僅僅闡述與以上實施方式的不同。由發射組件S及絕緣體IS及接收組件E組成的堆疊整合在一個共同的機殼G中。發射組件S具有第一電連接接觸部KS1及第二電連接接觸部KS2。接收組件E具有第一電連接接觸部KE1及第二電連接接觸部KE2。
D1~D4‧‧‧半導體二極體/二極體
E‧‧‧接收組件
EF‧‧‧接收區域
IS‧‧‧板狀電絕緣體/絕緣體
L‧‧‧光
OPT‧‧‧堆疊狀光耦合器組件/光耦合器組件
S‧‧‧發射組件
SF‧‧‧發射區域
TD1~TD3‧‧‧隧道二極體

Claims (17)

  1. 一種堆疊狀光耦合器組件(OPT)，其具有：具有發射區域(SF)之發射組件(S)，其中，該發射區域(SF)具有表面，具有接收區域(EF)之接收組件(E)，其中，該接收區域(EF)具有表面，板狀電絕緣體(IS)，其中，該絕緣體(IS)建構在該發射組件(S)與該接收組件(E)之間，該發射組件(S)及該接收組件(E)及該絕緣體(IS)堆疊狀地彼此重疊地配置，該發射組件(S)及該接收組件(E)在電方面彼此分離、然而在光方面彼此耦合，其中，該絕緣體(IS)至少對於該發射區域(SF)之發射波長之一部分透明，該發射區域(SF)之表面之重心線與該接收區域(EF)之表面之重心線基本上或精確地相互平行，該兩個重心線之間的位錯小於相應重心線與該發射區域(SF)之表面之外棱邊或者與該接收區域(EF)之表面之外棱邊的距離的一半或十分之一或五十分之一，從而該發射組件(S)之光主要或僅僅藉由該絕緣體(IS)作用至該接收組件(E)上，該絕緣體(IS)在所有側上自該堆疊凸台狀地凸出，該接收組件(E)具有N個相互串聯連接的部分電壓源，其中，N為自然數且2，各個部分電壓源之部分電壓彼此的偏差小於20%，該等部分電壓源中之每一者具有半導體二極體(D1，…， DN)，該等半導體二極體具有p-n結，在各兩個連續的部分電壓源之間建構有隧道二極體(TD1，…，TDN-1)，其中，該等部分電壓源及該等隧道二極體(TD1，…，TDN-1)一起單片式地整合。
  2. 如請求項1之整合式光耦合器(OPK)，其中該發射區域(SF)之表面之大小與該接收區域(EF)之表面之大小之間的差小於20%。
  3. 如請求項1之整合式光耦合器(OPK)，其中該發射區域(SF)之表面及該接收區域(EF)之表面具有四邊形狀並且相應的四邊形之最大邊長小於2mm。
  4. 如請求項1之整合式光耦合器(OPK)，其中由該發射組件(S)及絕緣體(IS)及接收組件(E)組成的堆疊整合在一個共同的機殼(G)中。
  5. 如請求項1之整合式光耦合器(OPK)，其中該發射區域(SF)之表面與該接收區域(EF)之表面同樣大並且除電連接區域以外整個發射區域(SF)發射光(L)並且整個接收區域(EF)吸收光(L)。
  6. 如請求項1之整合式光耦合器(OPK)，其中該發射區域(SF)之表面及該接收區域(EF)之表面為正方形的並且分別具有大於0.2×0.2mm2且小於4mm2或小於1mm2的基本面積。
  7. 如請求項1之整合式光耦合器(OPK)，其中該發射組件(S)具有用於發射器之波長的光學鏡或者具有RCLED或表面發射雷射器。
  8. 如請求項1之整合式光耦合器(OPK)，其中該板狀絕緣體(IS)由塑膠及或由玻璃及或由二氧化鋁及或由環氧樹脂及或由聚矽氧組成。
  9. 如請求項1之整合式光耦合器(OPK)，其中該絕緣體(IS)在所有側上自該堆疊凸出至少5μm。
  10. 如請求項1之整合式光耦合器(OPK)，其中該絕緣體(IS)之厚度小於0.5mm，然而最小為50μm。
  11. 如請求項1之整合式光耦合器(OPK)，其中該發射區域(SF)之發射波長等於該接收區域(EF)之吸收棱邊或者比該接收區域之吸收棱邊小最多10%。
  12. 如請求項1之整合式光耦合器(OPK)，其中該發射組件(S)及該接收組件(E)由III-V族材料建構。
  13. 如請求項1之整合式光耦合器(OPK)，其中該接收組件(E)包括GaAs基板及/或者Ge基板。
  14. 如請求項1之整合式光耦合器(OPK)，其中該接收組件(E)包括(A1)GaAs及/或InGaP及/或InGaAs材料。
  15. 如請求項1之整合式光耦合器(OPK)，其中該發射組件(S)及該接收組件(E)沿著堆疊方向具有截棱錐狀構造，其中，該截棱錐之下側之面積大小與該截棱錐之上側之面積大小之間的差為至少5μm2。
  16. 如請求項1之整合式光耦合器(OPK)，其中該發射區域(SF)之表面直接配置在該絕緣體(IS)之上側上並且該接收區域(EF)之表面直接配置在該絕緣體(IS)之下側上，從而該發射區域(SF)之表面與該接收區域(EF)之表面彼此面向。
  17. 如請求項1之整合式光耦合器(OPK)，其中該發射組件(S)具有基板層(SUBS)並且該基板層(SUBS)配置在該絕緣體(IS)之上側上，並且該接收組件(E)具有基板層(SUBE)並且該基板層(SUBE)配置在該絕緣體(IS)之下側上，從而該兩個基板層(SUBS，SUBE)直接彼此面向。
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EP3082170B1 (de) 2021-02-17
US20160308085A1 (en) 2016-10-20
CN106057962B (zh) 2017-12-26
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TWI627762B (zh) 2018-06-21
EP3082169A1 (de) 2016-10-19

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