CN105934308A - 接合材料、接合方法以及电力用半导体装置 - Google Patents

接合材料、接合方法以及电力用半导体装置 Download PDF

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CN105934308A
CN105934308A CN201480073843.2A CN201480073843A CN105934308A CN 105934308 A CN105934308 A CN 105934308A CN 201480073843 A CN201480073843 A CN 201480073843A CN 105934308 A CN105934308 A CN 105934308A
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power semiconductor
grafting material
silver
bismuth
semiconductor device
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CN201480073843.2A
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CN105934308B (zh
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山崎浩次
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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Abstract

本发明的目的在于得到同时实现耐热性和应力缓和性的接合，设为如下结构：一种板状的接合材料(1)，通过在与作为接合对象的金属部件(例如表面层(2f)、(3f))接触的状态下进行加热，从而在金属部件(例如作为材料是金、银、铜)中形成利用固相扩散反应的银的扩散层(Ld2)、(Ld3)，与金属部件接合，所述接合材料含有铋与银的合金，其中，所述接合材料含有1质量％以上且5质量％以下的铋。

Description

接合材料、接合方法以及电力用半导体装置
技术领域
本发明涉及通过利用银的固相扩散反应而接合后的耐热温度比接合温度高的板状的接合材料、使用了该接合材料的接合方法以及电力用半导体装置。
背景技术
近年来，针对电力用半导体装置的可靠性的要求日益提高，特别是要求提高关于热膨胀系数差大的电力用半导体元件与电路基板的接合部的寿命可靠性。以往，作为电力用半导体元件，多使用以硅(Si)、砷化镓(GaAs)为基材的电力用半导体元件，其动作温度是100℃～125℃。在将这些元件接合到电路基板时，多使用焊料材料。
另一方面，从节能的观点来看，作为下一代器件，以碳化硅(SiC)、氮化镓(GaN)为基材的电力用半导体元件的开发盛行着。它们以大电流动作，并且动作温度为175℃以上，据说将来还会成为300℃。此时，在如焊料那样使接合材料自身熔化而接合的情况下，需要在比接合部的耐热温度高的温度下接合，接合材料自身的选择受到限制自不必说，还存在为了不使接合对象劣化的制约。
因此，将被称为烧结性金属或者金属膏的纳米或者微米尺寸的金属粒子与有机溶剂混合而得到的接合材料(参照例如专利文献1)得到关注。关于这样的接合材料，覆盖金属粒子的表面的有机成分由于热而分解，从而金属粒子彼此烧结而形成接合部，烧结(接合)后的耐热温度成为与一体的金属的熔点相同的程度的温度(例如在银的情况下960℃)。虽然还取决于有机成分，但有机溶剂在约200～300℃下分解，所以能够在不使接合对象劣化的温度下接合，在接合之后，实现高耐热化。
另一方面，关于金属的烧结体，如专利文献1记载那样，相比于一体的金属，与具有空隙的量相应地，弹性率变低。即便如此，相比于以往的焊料等，弹性率依然高，所以热循环中的应力缓和性变低，难以长期间维持接合强度。因此，提出了如下技术：将具有润滑性的粒子或者弹性率比金属粒子低的树脂的填料混入到接合材料中，从而缓和应力(例如参照专利文献2或者3)。
专利文献1：日本特开2012－054358号公报(段落0010、图1)
专利文献2：日本特开2010－267579号公报(段落0013、图1)
专利文献3：日本特开2011－198674号公报(段落0010～0013、图1、图2)
发明内容
但是，难以使树脂材料的耐热温度比在下一代器件中设想的运转温度高，当在高温下使用时，由于接合材料中的树脂的劣化而接合强度下降。即，难以得到同时实现耐热性和应力缓和性的接合。
本发明是为了解决上述那样的问题而完成的，其目的在于得到同时实现耐热性和应力缓和性的接合。
本发明涉及板状的接合材料，通过在与作为接合对象的金属部件接触的状态下进行加热，从而在所述金属部件中形成利用固相扩散反应的银的扩散层、与所述金属部件接合，所述接合材料含有由铋与银的合金，其中，所述接合材料含有1质量％以上且5质量％以下的铋。
另外，本发明涉及接合方法，其特征在于，包括：热处理工序，在150℃以上且300以下的温度下对所述接合材料进行热处理；以及扩散层形成工序，在两个接合对象之间，夹着经过了所述热处理工序的接合材料，加热至比所述接合材料的熔点低的温度，在所述两个接合对象的各个中形成所述银的扩散层。
另外，本发明涉及电力用半导体装置，其特征在于，具备：电路基板，形成有电路图案；以及电力用半导体元件，与所述电路图案接合，所述电力用半导体元件和所述电路图案通过所述接合方法接合。
根据本发明，通过在银中以预定范围的比例添加铋，从而能够得到同时实现耐热性和应力缓和性的接合。另外，通过使用该接合，能够得到应对高温且可靠性高的电力用半导体装置。
附图说明
图1是用于说明使用本发明的实施方式1的接合材料的接合方法的每个工序的接合材料或者接合部分的剖面图。
图2是示出使用本发明的实施方式1的接合材料以及接合方法而制造的电力用半导体装置的结构的剖面图。
图3是本发明的实施方式1的接合材料的剖面示意图。
符号说明
1：接合材料；1F：合金箔(接合材料)；2：电力用半导体元件；2f：表面层；3：DBC基板(电路基板)；3a：导电层(电路图案)；3f：表面层；4：引线端子；5：密封体；10：接合体；10S：评价样品；100：电力用半导体装置。
具体实施方式
实施方式1.
图1～图2是用于说明本发明的实施方式1的接合材料、使用了接合材料的接合方法以及使用它们而制造出的电力用半导体装置的图。图1是使用接合材料而将电力用半导体元件接合于电路基板时的每个工序的接合材料或者接合部分的剖面图，图1(a)是示出将合金材料轧制为薄片状以用作接合材料的状态的剖面示意图，图1(b)是示出将接合对象彼此接合之前的状态的剖面图，图1(c)是示出接合之后的接合部分的状态的剖面图。另外，图2是示出使用接合材料以及接合方法而接合(制造)的电力用半导体装置的结构的剖面图。
在说明接合材料以及使用了接合材料的接合方法之前，说明作为其优选的应用对象的电力用半导体装置的结构。
如图2所示，在电力用半导体装置100中，作为电路基板，在氮化硅(Si3N4)制的基材3i的两面形成有铜(Cu)的导电层3a、3b的DBC基板3(Direct Bonded Copper)的电路面(导电层3a)侧，安装有纵式的电力用半导体元件2A、2B(总称为电力用半导体元件2)。使用以银为主体的板状的接合材料1而将作为布线部件的引线端子4接合于电力用半导体元件2A、2B的表面电极，并且电力用半导体元件2A、2B的背面也使用接合材料1来接合于DBC基板3。另外，除了DBC基板3的背面(导电层3b)侧和引线端子4的与外部电路的连接端侧以外，整个面被密封体5密封而封装化。
电力用半导体元件2也可以是以硅片为基材的一般的元件。但是，在本发明中，以向碳化硅(SiC)、氮化镓(GaN)或者金刚石这样的带隙比硅宽的所谓的宽带隙半导体材料的应用为目的，将碳化硅用作基材。作为器件种类，有IGBT(Insulated Gate BipolarTransistor，绝缘栅双极型晶体管)、MOSFET(Metal OxideSemiconductor Field－Effect－Transistor，金属氧化物半导体场效应晶体管)那样的开关元件或者二极管那样的整流元件。例如，在MOSFET的情况下，在电力用半导体元件2的DBC基板3侧的面形成有漏极电极。另外，在与漏极电极相反的一侧(在图中上侧)的面分开区域而形成有栅极电极、源极电极，但为了简化说明，关于上侧的面，仅记载主电力用的源极电极而进行说明。
DBC基板3具有40mm×40mm的尺寸，厚度方向的结构是导电层3a：0.4mm/基材3i：0.3mm/导电层3b：0.4mm。电力用半导体元件2的电极中的与(隔着接合材料1的)DBC基板3的接合面即漏极电极的表面被金(Au：表面层2f)覆盖。另外，DBC基板3的导电层3a、3b中的、作为与(隔着接合材料1的)电力用半导体元件2的接合面的表面被银(Ag：表面层3f)覆盖。另外，本发明的实施方式1的电力用半导体装置100的特征在于，至少在电力用半导体元件2与电路基板(例如DBC基板3)、布线部件(例如引线端子4)的接合中使用含有1～5wt％的铋(Bi)的银与铋的合金(合金箔1F)来作为接合材料1。另外，作为接合方法，设置将接合之前的合金箔1F在150℃至300℃下保持10～100小时这样的热处理工序。
另外，接合材料1是以银为主要成分的合金，与接合对象的接触表面侧的银成分固相扩散到覆盖接合对象的接合面的金属内，形成银的扩散层，由此进行接合。因此，本接合材料1的形态基本上在接合的前后不变化。因此，在本说明书中，特别是在说明工序时，在表示接合之前的状态的情况下，有时记载为“合金箔1F”，但并不意味着与接合材料1不同。
为了使上述接合材料1的组成、热处理条件(温度、保持时间)最佳化，首先，以铋含有率为参数，制作用于用作接合材料1的薄片状的合金(合金箔1F)，评价在作成薄片状时有无轧制破裂。然后，使用未产生轧制破裂的组成的合金箔，如图1所示，将电力用半导体元件2与DBC基板3实际地使用合金箔1F接合，制作接合体10(称为评价样品10S)，通过热冲击(热循环)试验，进行耐热循环性的评价。以下，详细地进行说明。
<合金(箔)的制作>
以使合金中的铋含有率(wt％)成为期望的含有率的方式，用电子天平分别称量纯度99.9wt％的粒状的银和粉末状的铋(针状)，放入到石英玻璃制坩埚，在大气中用气焊炬或者高频感应加热装置进行加热/溶化。将炉整体保持为银的熔点以上，并以使铋均匀地分散的方式，用石英玻璃保护管搅拌，之后冷却/凝固，制作出样品合金1R。之后，如图1(a)所示，对样品合金1R进行轧制处理，制作出厚度：50～100μm、宽度：40mm的Ag－Bi合金薄片(合金箔1F)。
<铋含有率>
在制作出合金箔1F时的轧制处理中，如果在合金箔1F的两端部未产生3mm以上的轧制破裂，则作为评价结果，设为“○”，如果产生轧制破裂，则设为“×”。使铋的含有率在0.5wt％～7wt％之间变化，制作、评价6种评价样品10S(实施例1～3、比较例1～3)。表1示出其评价结果。另外，关于合金箔1F的制作方法，能够应用片材成型方法、冲压成型、粉末烧成法等，而不限于轧制处理。
[表1]
表1参数试验结果1
其结果，当在同样的轧制工序中进行比较时，如果铋的含有率是0.5wt％(比较例1)、1wt％(实施例1)、3wt％(实施例2)、5wt％(实施例3)的1～5wt％的范围，则不产生轧制破裂，是良好的结果(○)。如果铋含有率是比5wt％高的6wt％(比较例2)，则产生刚好与基准相同的3mm左右的轧制破裂，所以设为“△”。如果铋含有率是7wt％(比较例3)，则产生3mm以上的轧制破裂，所以设为“×”，未能得到良好的结果。
接下来，除了产生了轧制破裂的铋含有率是7wt％的合金箔1F(比较例3)以外，将铋含有率是0.5～5wt％的合金箔1F在氮气氛围中进行200℃×48hrs的退火(热)处理。然后，如图1(b)所示，将退火处理后的合金箔1F插入到接合表面被金(表面层2f)覆盖的SiC的电力用半导体元件2(厚度0.3mm×5mm×5mm)与对接合表面实施了镀银(形成有表面层3f)的DBC基板3(在图中仅示出导电层3a部分)之间。在该状态下，在甲酸还原气氛中，从室温升温，在达到接合温度300℃的时间点保持温度，进行10MPa加压，同时作为接合时间保持10min。这样，通过加热、加压，能够促进元件电极的表面层2f的金与合金箔1F的固相扩散反应(在元件电极的金内，合金中的银固相扩散而成的扩散层Ld2的生成)、DBC基板3表面层3f的银与合金箔1F的固相扩散反应(在DBC基板3侧的银内，合金中的银扩散而成的扩散层Ld3的生成)。在进行保持之后，停止加压，进行冷却，得到评价样品10S(实施例1～3、比较例1～2)。
接下来，将评价样品10S设置在热循环装置内，在－55℃×30min/200℃×30min的条件下进行热冲击试验。在热冲击循环达到1000个循环的时间点，将评价样品10S从装置取出，进行元件对角的剖面观察(观察长度：)，测定接合端部的裂纹长度。如果在接合部产生裂纹，则损害该部位的散热性，所以将在实际使用上对散热性产生影响的裂纹长度设为全长14mm的10％即1.4mm。然后，如果裂纹长度是1.4mm以上，则将耐热循环性(在表中“耐H/C性”)评价为“×”，如果是1.4mm以下，则评价为“○”。
其结果，如果铋的含有率是1wt％(实施例1)、3wt％(实施例2)、5wt％(实施例3)、即1～5wt％的范围，则裂纹进展是1.4mm以下，为良好(○)。另一方面，如果铋含有率是比1wt％少的0.5wt％(比较例1)，则裂纹进展1.4mm以上，所以是“×”，在是比5wt％多的6wt％(比较例2)时，裂纹也进展1.4mm以上，所以是“×”。这被认为是由于在铋含有率为1～5wt％的范围，添加到银的铋起到使银晶粒微细化的作用，延展性提高。另外，被认为是通过对Ag－Bi的合金箔1F在接合之前进行退火处理，从而消除在轧制时产生的加工硬化，并且进一步促进银晶粒以及部分析出的富铋的析出相的微细分散化，晶界(crystal grain boundaries)增加，由此促进晶界滑动(grain boundary sliding)，实现软化的促进和延展性的提高。
图3示出代表性的接合材料的剖面照片。在图3中，图3(a)是退火前的剖面照片，图3(b)是退火后的剖面照片。另外，白色的部位是富铋的析出相X，黑色是母材(Ag)的相Y。在富铋的析出相X的粒径测定中，使用了图像软件ImageJ。具体而言，对剖面照片进行2值化，用白色显示富铋的析出相X，包围该白色部分，根据事先估计的尺度而计算面积S。根据得到的面积S，基于下述式，计算出粒径L。
S＝π×(L/2)^2 (1)
S：面积、L：富铋的析出相的粒径
L = ( 4 &times; S / &pi; ) - - - ( 2 )
其结果，关于富铋的析出相X的粒径，在铋含有率是1～5wt％时，在退火之前(图3(a))是3～8μm，但在退火之后(图3(b))，成为0.2～1.0μm，由此，也被认为证实上述机制。
银具有比铋高的热传导率，所以如果从热传导率的观点考虑，则优选不添加铋。但是，例如，锡(Sn)系、铅(Pb)系的焊料材料的热传导率约为50W/m·K左右，纯银的热传导率约为420W/m·K。另一方面，由株式会社Bethel(日文：株式会社べテル)通过光交流法测定铋的含有率为1～5wt％的合金箔1F的热传导率，约为150～300W/m·K左右，热传导率高达焊料的约3倍，被确认是散热性优良的材料。
<热处理条件(温度)>
接下来，研究了退火处理温度的最佳值。在对铋含有率被设为1～5wt％的样品合金1R进行轧制而作为合金箔1F之后，以退火温度为参数，将退火时间固定为与上述相同的48hrs，进行热处理。然后，通过与上述同样的处理，制作出8种评价样品10S(实施例4～7、比较例4～7)，通过热循环后的剖面观察，评价裂纹进展度。表2示出其评价结果。
[表2]
表2参数试验结果2
其结果，根据将退火温度设定为150℃的实施例4、实施例6、将退火温度设定为300℃的实施例5、实施例7的评价结果，在退火温度为150℃～300℃的范围，裂纹进展是1.4mm以下而成为“○”。另一方面，在退火温度是比150℃低的140℃(比较例4、比较例6)的情况下，Ag－Bi合金的组织的微细化所致的软化不进展，应力缓和性低，所以裂纹进展1.4mm以上而成为“×”。在退火温度是比300℃高的320℃(比较例5、比较例7)的情况下，可能是由于相比于微细分散效果，铋的晶粒由于热而粗大化，起到抑制晶界滑动那样的作用，所以应力缓和性变低，裂纹进展1.4mm以上而成为“×”。其结果，如下情况被确认：在退火温度中存在合适值(范围)，在铋含有率是1～5wt％的Ag－Bi合金中，150～300℃是合适值。
<热处理条件(时间)>
接下来，研究退火处理时间的最佳值。在对铋含有率被设为1～5wt％的样品合金1R进行轧制而作为合金箔1F之后，在上述退火温度的上限值和下限值的各个温度下，以退火时间为参数，进行热处理。然后，通过与上述同样的处理，制作出19种评价样品10S(实施例8～19、比较例8～14)，通过热循环后的剖面观察，评价裂纹进展度。表3示出其评价结果。
[表3]
表3参数试验结果3
其结果，在退火温度是150或者300℃下，在将退火时间设定为10hrs的情况(实施例8、实施例11、实施例14、实施例17)、设定为30hrs的情况(实施例9、实施例12、实施例15、实施例18)、设定为100hrs的情况(实施例10、实施例13、实施例16、实施例19)下，即在退火时间为10～100hrs的范围，裂纹进展是1.4mm以下而成为“○”。在退火处理时间设定为比10hrs短的8hrs的情况(比较例8、比较例9、比较例10、比较例11)下，Ag－Bi合金的组织的微细化所致的软化不进展，应力缓和性低，所以裂纹进展1.4mm以上而成为“×”。
在退火处理温度是温度范围的上限即300℃的情况下，如果保持超过上述时间范围的120hrs，则应力缓和性变低，裂纹进展1.4mm以上而成为“×”。这被认为是由于相比于微细分散效果，铋的晶粒由于热而粗大化，起到抑制晶界滑动那样的作用。另外，被确认在温度范围中的比300℃低的温度的情况下，直至保持时间为100hrs为止，耐热循环性裂纹抗性为“○”，但在其以上长的时间中，微细分散效果显现至何种程度不详。但是，在量产处理中，优选更短的时间的处理，如果是100hrs(约4日)以上的退火处理，则作为量产处理，在节拍的观点中是不合适的。因此，如果在直至100hrs的处理范围确认了裂纹抗性，则在量产上没有问题。其结果，如下情况被确认：在退火处理时间中，在铋含有率是1～5wt％的Ag－Bi合金中，当是150～300℃的退火处理时，如果是10～100hrs，则能够得到良好的结果。
关于接合条件，主要是接合气氛、接合温度、加压、保持时间为参数。在上述参数试验中，使用了甲酸还原气氛作为接合气氛，但也可以是氢还原气氛。
关于接合温度，是促进覆盖接合对象的接合面的金属与Ag－Bi合金之间的固相扩散反应的温度即可，在参数试验中，设为300℃，但只要是250～300℃的范围，就能够得到同样的效果。如果将接合温度设定为比250℃低的温度，则与接合面的固相扩散反应不进展，所以无法得到良好的接合部。另外，被认为在设定为比250℃低的温度的情况下，如果延长保持时间，扩散也进展，但如果考虑量产处理，则在实用上不能应用。
另一方面，如果将接合温度设定为比300℃高的温度，则产生构成DBC基板3的导电层3a、3b的铜的软化。因此，如果在比300℃高的接合温度下制作评价样品10S，则初始接合部即使良好，当施加热循环试验时，也在DBC基板3中产生翘曲，并且表面起伏，成为凹凸形状。于是，在接合端部中，由于DBC基板3的翘曲而产生裂纹，在接合内部，变得无法追随DBC基板3的凹凸，产生相对接合面而言纵向的裂纹。因此，接合温度优选为250℃～300℃。
关于接合时间，是产生覆盖接合对象的接合面的金属与Ag－Bi合金之间的固相扩散反应的时间即可，在上述中设为10min，但即便是5min，也能够得到良好的接合部。如果接合时间过长，则量产处理中的节拍长，是不利的，所以5～10min为最佳。
虽然加压力还取决于接合面的平坦性，但在本次评价中使用的电力用半导体元件2的表面平坦性Ra都是50nm以下，在评价中使用的DBC基板3的表面的平坦性Ra都是1μm以下。如果是这样的平坦性，则如果对Ag－Bi系的合金箔1F进行10～30MPa加压，就能够得到良好的接合。另外，使用了合金箔1F的表面平坦性Ra都是1μm以下的合金箔。
关于覆盖接合面的金属，只要是金、银、铜中的任意的组合，则电力用半导体元件2以及DBC基板3都能够得到良好的接合。另外，即便是锡，也能够得到良好的接合部，但锡的熔点是230℃左右，在接合温度250～300℃下熔融。在该情况下，银扩散到锡中，与微细的金属间化合物(Ag3Sn)一起，形成熔点220℃的锡与银的共晶相(Sn－3Ag(wt％))，所以损害耐热性，所以不优选。另外，铋扩散到锡中，形成熔点138℃的锡与铋的共晶相(Sn－58Bi(wt％))，所以损害耐热性，所以不优选。
另外，在需要与锡表面接合的情况下，需要以在Sn与Ag－Bi合金的界面使熔点低的锡单相或者锡与银的共晶相、锡与铋的共晶相不残留的方式进行充分加热。然后，需要使界面部分全部由至少包括Ag3Sn、Ag5Sn的金属间化合物形成。
关于接合对象，在本实施方式1的电力用半导体装置100中，示出了在电力用半导体元件2与DBC基板3的接合或者电力用半导体元件2与引线端子4的接合中使用了Ag－Bi合金的接合材料1的例子。但是，在电力用半导体装置100中，不限于DBC基板3，通常，在电路基板下设置有散热板，对电路基板与散热板的接合也能够应用本发明的接合材料1。
另外，在本实施方式1的电力用半导体装置100中，示出了在作为开关元件、整流元件发挥功能的电力用半导体元件2中，使用了碳化硅的例子，但不限于此，在以往的硅系的元件中也能够应用。但是，在使用了如碳化硅、氮化镓系材料或者金刚石那样被称为宽带隙半导体元件的元件的情况下，电力损失比以往使用的用硅形成的元件低，所以能够使电力用半导体装置100高效化。另外，耐电压性高且容许电流密度也高，所以能够使电力用半导体装置100小型化。进而，宽带隙半导体元件的耐热性高，所以能够进行高温动作，还能够进行散热器的散热片的小型化、水冷部的空冷化，所以能够使电力用半导体装置100进一步小型化。
另一方面，为了发挥宽带隙半导体元件的性能，需要降低在电力用半导体元件2中流过电流时的电阻，并且效率良好地使在电力用半导体元件2中产生的热散热。因此，如果使用本发明的实施方式所记载的Ag－Bi合金系的接合材料1来安装电力用半导体元件2，则散热特性、电传导性也优良，并且在制造时、驱动时的热循环下，也能够维持坚固的接合，所以能够得到可靠性高的电力用半导体装置100。
如以上那样，根据本实施方式的接合材料1，提供板状的接合材料1，构成为：通过在与作为接合对象的金属部件(例如电力用半导体元件2的元件电极的表面层2f、DBC基板3的导电层3a的表面层3f)接触的状态下进行加热，从而在金属部件(例如作为材料，是金、银、铜)中形成基于固相扩散反应的银的扩散层Ld2、Ld3、与金属部件接合，所述接合材料1含有铋与银的合金，其中，所述接合材料1含有1质量％以上且5质量％以下的铋，所以能够适度地缓和弹性率，得到同时实现耐热性和应力缓和性的接合。
另外，接合材料1是具有50μm～100μm的厚度的轧制材料，无需使厚度多余地增加就能够形成接合体10，能够容易地制作小型且高效的电力用半导体装置100。另外，能够容易地得到适合于接合的面精度。
另外，根据本实施方式的接合方法，包括：热处理工序，在150℃以上且300以下的温度下对接合材料1进行热处理；以及扩散层形成工序，在两个接合对象(例如电力用半导体元件2、DBC基板3)之间，夹着经过了热处理工序的接合材料1，加热至比接合材料1的熔点低的温度，在两个接合对象的各个中形成银的扩散层Ld2、Ld3，所以本实施方式的接合方法能够得到应力缓和性优良且坚固的接合。
如果将热处理工序中的热处理时间设为10小时以上且100小时以下，则能够可靠地得到应力缓和效果。
扩散层形成工序中的加热温度是250℃以上且300℃以下，所以不使接合对象劣化，而能够得到坚固的接合。
在还原气氛(例如氢气气氛或者甲酸气氛)下进行扩散层形成工序，所以在接合材料1、接合对象的接合面不产生氧化覆膜，能够可靠地使银的扩散层Ld2、Ld3形成。
另外，根据本实施方式的电力用半导体装置100，具备形成有电路图案(导电层3a)的电路基板(DBC基板3)和与电路图案(导电层3a)接合的电力用半导体元件2，电力用半导体元件2与电路图案(导电层3a)通过本实施方式的接合方法接合，所以电力用半导体元件2与DBC基板3的接合的耐热性高且具备应力缓和性。因此，即使反复进行高温运转、功率循环，也能够维持坚固的接合，能够得到可靠性高的电力用半导体装置100。
在电力用半导体元件2以及电路图案(导电层3a)的相对置的面的各个面，作为金属部件，形成有基于金、银、铜中的任意的金属而形成的金属层2f、3f，所以能够可靠地得到银的扩散层Ld2、Ld3。

Claims (11)

1.一种板状的接合材料，通过在与作为接合对象的金属部件接触的状态下进行加热，从而在所述金属部件中形成利用固相扩散反应的银的扩散层，与所述金属部件接合，所述接合材料含有铋与银的合金，其中，
所述接合材料含有1质量％以上且5质量％以下的铋。
2.根据权利要求1所述的接合材料，其特征在于，
所述铋与银的合金的富铋的相的粒径是0.2～1.0μm。
3.根据权利要求1或者2所述的接合材料，其特征在于，
所述接合材料是具有50μm～100μm的厚度的板材。
4.一种接合方法，使用权利要求1至3中的任意一项所述的接合材料进行接合，所述接合方法的特征在于，包括：
热处理工序，在150℃以上且300以下的温度下对所述接合材料进行热处理；以及
扩散层形成工序，在两个接合对象之间，夹着经过了所述热处理工序的接合材料，加热至比所述接合材料的熔点低的温度，在所述两个接合对象的各个中形成所述银的扩散层。
5.根据权利要求4所述的接合方法，其特征在于，
所述热处理的时间是10小时以上且100小时以下。
6.根据权利要求4或者5所述的接合方法，其特征在于，
所述扩散层形成工序中的加热温度是250℃以上且300℃以下。
7.根据权利要求4至6中的任意一项所述的接合方法，其特征在于，
所述扩散层形成工序是在还原气氛下进行的。
8.一种电力用半导体装置，其特征在于，具备：
电路基板，形成有电路图案；以及
电力用半导体元件，与所述电路图案接合，
所述电力用半导体元件和所述电路图案通过权利要求4至7中的任意一项所述的接合方法接合。
9.根据权利要求8所述的电力用半导体装置，其特征在于，
在所述电力用半导体元件以及所述电路图案的相对置的面的各个面，作为所述金属部件，形成有基于金、银、铜中的任意的金属而形成的金属层。
10.根据权利要求8或者9所述的电力用半导体装置，其特征在于，
所述电力用半导体元件包含宽带隙半导体材料。
11.根据权利要求10所述的电力用半导体装置，其特征在于，
所述宽带隙半导体材料是碳化硅、氮化镓系材料以及金刚石中的任意的材料。
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