JP5866075B2 - 接合材の製造方法、接合方法、および電力用半導体装置 - Google Patents
接合材の製造方法、接合方法、および電力用半導体装置 Download PDFInfo
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- JP5866075B2 JP5866075B2 JP2015528782A JP2015528782A JP5866075B2 JP 5866075 B2 JP5866075 B2 JP 5866075B2 JP 2015528782 A JP2015528782 A JP 2015528782A JP 2015528782 A JP2015528782 A JP 2015528782A JP 5866075 B2 JP5866075 B2 JP 5866075B2
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- bonding
- power semiconductor
- bonding material
- silver
- diffusion layer
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- 239000000463 material Substances 0.000 title claims description 81
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 238000000034 method Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 47
- 229910052797 bismuth Inorganic materials 0.000 claims description 46
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 42
- 229910052709 silver Inorganic materials 0.000 claims description 42
- 239000004332 silver Substances 0.000 claims description 42
- 238000009792 diffusion process Methods 0.000 claims description 39
- 239000000956 alloy Substances 0.000 claims description 35
- 229910045601 alloy Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000005304 joining Methods 0.000 claims description 19
- 239000012071 phase Substances 0.000 claims description 13
- 239000007790 solid phase Substances 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- CCXYPVYRAOXCHB-UHFFFAOYSA-N bismuth silver Chemical compound [Ag].[Bi] CCXYPVYRAOXCHB-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 31
- 238000000137 annealing Methods 0.000 description 27
- 239000000758 substrate Substances 0.000 description 26
- 239000011888 foil Substances 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 16
- 229910001152 Bi alloy Inorganic materials 0.000 description 14
- 238000005096 rolling process Methods 0.000 description 12
- 229910052718 tin Inorganic materials 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
- 239000002344 surface layer Substances 0.000 description 10
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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- B23K35/24—Selection of soldering or welding materials proper
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- B23K35/3006—Ag as the principal constituent
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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Description
図1〜図2は、本発明の実施の形態1にかかる接合材、接合材を用いた接合方法、およびそれらを用いて製造された電力用半導体装置について説明するためのものである。図1は接合材を用いて電力用半導体素子を回路基板に接合する際の工程ごとの接合材あるいは接合部分の断面図であって、図1(a)は合金材を接合材として用いるために薄片状に圧延する様子を示す断面模式図、図1(b)は接合対象どうしを接合する前の状態を示す断面図、図1(c)は接合後の接合部分の状態を示す断面図である。また、図2は接合材および接合方法を用いて接合(製造)した電力用半導体装置の構成を示す断面図である。
電力用半導体装置100は、図2に示すように、回路基板として、窒化ケイ素(Si3N4)製の基材3iの両面に銅(Cu)の導電層3a、3bが形成されたDBC基板3(Direct Bonded Copper)の回路面(導電層3a)側に、縦型の電力用半導体素子2A、2B(まとめて電力用半導体素子2)が実装されたものである。電力用半導体素子2A、2Bの表面電極には、配線部材であるリード端子4が銀を主体とした板状の接合材1を用いて接合されているとともに、裏面もDBC基板3に対して接合材1を用いて接合されている。そして、DBC基板3の裏面(導電層3b)側と、リード端子4の外部回路との接続端側を除き、全面が封止体5によって封止されてパッケージ化されたものである。
Gate Bipolar Transistor)やMOSFET(Metal Oxide
Semiconductor Field-Effect-Transistor)のようなスイッチング素子、またはダイオードのような整流素子がある。例えば、MOSFETの場合、電力用半導体素子2のDBC基板3側の面にはドレイン電極が形成されている。そして、ドレイン電極と反対側(図で上側)の面には、ゲート電極やソース電極が、領域を分けて形成されているが、説明を簡略化するため、上側の面は、主電力用のソース電極のみを記載して説明する。
合金中のビスマス含有率(wt%)が所望の含有率になるように、純度99.9wt%の粒状の銀と粉末状のビスマス(針状)をそれぞれ電子天秤で秤量して、石英ガラス製るつぼに入れ、大気中でガストーチまたは高周波誘導加熱装置で加熱・溶解した。炉全体を銀の融点以上に保持し、ビスマスがまんべんなく分散するように石英ガラス保護管で攪拌した後、冷却・凝固させて試料合金1Rを作成した。その後、図1(a)に示すように、試料合金1Rに圧延処理をおこない、厚さ:50〜100μm、幅:40mmのAg―Bi合金薄片(合金箔1F)を作製した。
合金箔1Fを作成した際の圧延処理で、合金箔1Fの両端部に3mm以上の圧延割れが生じていなければ評価結果として「○」、圧延割れが生じていれば「×」とした。ビスマスの含有率を0.5wt%〜7wt%までの間で変化させて6種の評価サンプル10S(実施例1〜3、比較例1〜3)を作成し、評価した。その評価結果を表1に示す。なお、合金箔1Fの作製方法については、シート成形方法、プレス成形、粉末焼成法などを適用でき、圧延処理に限定するものではない。
10S(実施例1〜3、比較例1〜2)を得た。
S=π×(L/2)^2 (1)
S:面積、L:ビスマスリッチな析出相の粒径
L=√(4×S/π) (2)
次に、アニール処理温度の最適値について検討した。ビスマス含有率が1〜5wt%とした試料合金1Rを圧延して合金箔1Fとした後、アニール温度をパラメータとし、アニール時間は、上記と同じ48hrsに固定して、熱処理を行った。そして、上記と同様のプロセスで8種の評価サンプル10S(実施例4〜7、比較例4〜7)を作製し、ヒートサイクル後の断面観察により、クラック進展度を評価した。その評価結果を表2に示す。
次に、アニール処理時間の最適値について検討した。ビスマス含有率が1〜5wt%とした試料合金1Rを圧延して合金箔1Fとした後、上述したアニール温度の上限値と下限値のそれぞれで、アニール時間をパラメータとして熱処理を行った。そして、上記と同様のプロセスで19種の評価サンプル10S(実施例8〜19、比較例8〜14)を作製し、ヒートサイクル後の断面観察により、クラック進展度を評価した。その評価結果を表3に示す。
2f:表面層、 3:DBC基板(回路基板)、 3a:導電層(回路パターン)、
3f:表面層、 4:リード端子、 5:封止体、 10:接合体、
10S:評価サンプル、 100:電力用半導体装置。
Claims (11)
- 接合対象である金属部材に接触させた状態で加熱することにより、前記金属部材の中に固相拡散反応による銀の拡散層を形成し、前記金属部材と接合される、ビスマスを含み銀を主成分とする合金で構成された板状の接合材の製造方法であって、
ビスマスを1質量%以上、5質量%以下含有することを特徴とする接合材の製造方法。 - 前記ビスマスと銀の合金は、ビスマスリッチな相の粒径が、0.2〜1.0μmであることを特徴とする請求項1に記載の接合材の製造方法。
- 前記接合材は、50μm〜100μmの厚みを有することを特徴とする請求項1または2に記載の接合材の製造方法。
- 請求項1から3のいずれか1項に記載の接合材の製造方法により製造された接合材を用いて接合する方法であって、
前記接合材を150℃以上、300以下の温度で熱処理する熱処理工程と、
2つの接合対象の間に、前記熱処理工程を経た接合材を挟み、前記接合材の融点よりも低い温度に加熱して、前記2つの接合対象のそれぞれに前記銀の拡散層を形成する拡散層形成工程と、
を含むことを特徴とする接合方法。 - 前記熱処理の時間が10時間以上、100時間以下であることを特徴とする請求項4に記載の接合方法。
- 前記拡散層形成工程における加熱温度が、250℃以上、300℃以下であることを特徴とする請求項4または5に記載の接合方法。
- 前記拡散層形成工程が、還元雰囲気で行われることを特徴とする請求項4から6のいずれか1項に記載の接合方法。
- 回路パターンが形成された回路基板と、
前記回路パターンに接合された電力用半導体素子と、を備え、
前記回路基板と前記電力用半導体素子との接合部は、
前記電力用半導体素子の側に形成された第1拡散層と、
ビスマスを含み銀を主成分とする合金で構成された接合材と、
前記回路パターンの側に形成された第2拡散層と、から形成され、
前記第1拡散層および前記第2拡散層は前記接合材から銀が拡散して前記接合材と接合されていることを特徴とする電力用半導体装置。 - 前記第1拡散層および前記第2拡散層は、金、銀、銅のいずれかによる金属層に銀が拡散して形成されていることを特徴とする請求項8に記載の電力用半導体装置。
- 前記電力用半導体素子がワイドバンドギャップ半導体材料により形成されていることを特徴とする請求項8または9に記載の電力用半導体装置。
- 前記ワイドバンドギャップ半導体材料は、炭化ケイ素、窒化ガリウム系材料、およびダイヤモンドのうちのいずれかであることを特徴とする請求項10に記載の電力用半導体装置。
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