CN105103286B - 半导体模块 - Google Patents

半导体模块 Download PDF

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CN105103286B
CN105103286B CN201480020473.6A CN201480020473A CN105103286B CN 105103286 B CN105103286 B CN 105103286B CN 201480020473 A CN201480020473 A CN 201480020473A CN 105103286 B CN105103286 B CN 105103286B
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solder
metal foil
semiconductor element
pin
semiconductor module
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CN105103286A (zh
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山田教文
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Fuji Electric Co Ltd
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Abstract

本发明的半导体模块的提高利用销接合的半导体模块的冷却能力。该半导体模块具备：与半导体元件(1)连接的销(4)；在上下表面具备第二金属箔(5c)、第一金属箔(5b)，并且第一金属箔(5b)和第二金属箔(5c)与销(4)电接合的销布线基板(5)；将销(4)与半导体元件(1)接合的焊料(3c)；在上下表面具备第三金属箔(2b)、第四金属箔(2c)，且使第三金属箔(2b)与半导体元件(1)的下表面接合的覆铜陶瓷基板(2)；与第四金属箔(2c)连接的第一冷却器(6)，其中，焊料的高度(H)与从半导体元件(1)到第一金属箔(5b)之间的距离(T)之比H/T在0.2以上且0.7以下的范围内。

Description

半导体模块
技术领域
本发明涉及在利用销接合的半导体模块中，能够提高冷却能力的半导体模块。
背景技术
作为公开了利用销接合的半导体模块，已知有以下专利文献1、2的半导体模块。
专利文献1的图1公开了被穿插进印刷基板的植入销和半导体元件进行电接合的结构。
专利文献2的图7、8、11公开了半导体元件与多个柱电极通过焊料接合的内容。
现有技术文献
专利文献
专利文献1：WO2011/083737号公报
专利文献2：日本特开2009-64852号公报
发明内容
技术问题
专利文献1、2公开了作为抑制因长期使用导致接线框与电极之间的剥离现象的对策而提出的销接合构造的半导体模块，但是，该半导体模块的构造存在以下问题，由于只对半导体元件的单面进行冷却的构造而导致冷却能力低下，难以充分发挥半导体元件的能力。
为了解决上述的问题，本发明的目的在于，提供在利用销接合的半导体模块中，能够提高冷却能力的半导体模块。
技术方案
发明人发现在利用销接合的半导体模块中，通过将对销和半导体元件进行接合的焊料的厚度最优化，从而能够提高半导体模块的冷却能力，本发明得以实现。
为了解决上述问题，本发明的半导体模块具备：半导体元件；销，其与上述半导体元件的一个面电连接以及热连接；销布线基板，其具备销布线用绝缘基板、配置在上述销布线用绝缘基板的下表面的第一金属箔、以及配置在上述销布线用绝缘基板的上表面的第二金属箔，并且，上述第一金属箔和上述第二金属箔与上述销电接合；焊料，其将上述销和上述半导体元件接合；覆铜陶瓷基板，其具备陶瓷绝缘基板、配置在上述陶瓷绝缘基板的上表面的第三金属箔，以及配置在上述陶瓷绝缘基板的下表面的第四金属箔，上述第三金属箔与上述半导体元件的下表面接合；以及第一冷却器，其与上述第四金属箔热连接，其中，上述焊料的高度H与从上述半导体元件到上述销布线用绝缘基板的上述第一金属箔之间的距离T之比H/T在0.2以上且0.7以下的范围内。
优选地，在本发明的半导体模块中，上述焊料的线膨胀系数小于22.0ppm/K。
优选地，在本发明的半导体模块中，上述焊料为SnSb系焊料。
优选地，在本发明的半导体模块中，上述SnSb系焊料以质量百分比计含有13％的Sb来作为主要成分。
优选地，在本发明的半导体模块中，上述焊料为SnAg系焊料。
发明的效果
根据本发明，将在半导体元件产生的热量向在半导体元件表面通过焊接进行了销接合的销布线基板，以及在半导体元件背面通过焊料进行了接合的陶瓷绝缘基板这两者传导，由此能够提高冷却能力。另外，在上述销接合中，使焊料高度H与从半导体元件到第一金属箔之间的距离T之比(H/T)在0.2以上且0.7以下，由此能够通过焊料的蓄热效果缓和导热过渡现象，并且抑制半导体元件表面的温度上升。
附图说明
图1是本发明的一个实施方式的半导体模块的剖面示意图。
图2是表示焊料高度与半导体元件最高温度Tj的关系的图。
图3是表示焊料高度与半导体元件最高温度Tj的减少率的关系的图。
图4是表示焊料高度与作用于半导体元件的应力的关系的图。
图5是表示焊料高度比与半导体元件最高温度Tj的减少率的关系的图。
图6是焊料高度比与作用于半导体元件的应力的减少率的关系的图。
具体实施方式
以下，参照附图说明本发明的半导体模块的实施方式。对相同的构成要素标注相同的附图标记，并省略重复的说明。需要说明的是，本发明不受限于下述的实施方式，在不变更其主旨的范围内可适当地进行变形来实施。
首先，对半导体模块的构造进行说明。
图1表示了本发明的半导体模块100的剖面示意图。半导体模块100具备半导体元件1、覆铜陶瓷(DCB)基板2、陶瓷绝缘基板2a、第三金属箔2b、第四金属箔2c、焊料3a、焊料3b、焊料3c、销4、销布线基板5、销布线用绝缘基板5a、第一金属箔(电路层)5b、第二金属箔5c、第一冷却器6、第一制冷剂通路6a、翅片6b、外部端子7a、外部端子7b、密封树脂8。
半导体元件1未被特别地限定，可以是例如绝缘栅双极晶体管(Insulated GateBipolar Transistor)、功率场效应晶体管(Metal OxideSemiconductor Field EffectTransistor)、续流二极管(Free WheelingDiode)，还可以是将这些晶体管在一个半导体元件中沿纵向形成的反向阻断绝缘栅双极晶体管(Reverse Blocking-Insulated GateBipolar Transistor)、反向导通绝缘栅双极晶体管(Reverse Conducting-InsulatedGate BipolarTransistor)。
销布线基板5由销布线用绝缘基板5a、第一金属箔(电路层)5b、第二金属箔5c构成，第一金属箔(电路层)5b以与半导体元件1对置的方式配置。销布线用绝缘基板5a未被特别限定，优选为介电常数低且热传导率高的材料，可以使用例如聚酰亚胺树脂和/或玻璃环氧树脂。需要说明的是，销布线用基板5并非必须是印刷基板，也可以是例如铜的薄板。第一金属箔(电路层)5b与第二金属箔5c未被特别地限定，优选为电阻低且热传导率高的材料，可以使用例如铜。
销4未被特别地限定，优选为电阻低且热传导率高金属，具体地为铜。销4的一端通过焊料3c被焊接到半导体元件1的上表面，另一端贯穿销布线基板5，并与第一金属箔(电路层)5b和第二金属箔5c接合。根据上述构造，能够将销4稳定地固定于半导体元件1和销布线基板5，在半导体元件1产生的热量经由销4向第二金属箔5c传递，能够提高半导体模块100的冷却效率。另外，对于销4而言，优选为相对于一个半导体元件1配置多个销。由此，可以在降低电阻的同时提高热传导性能。
第一冷却器6的内部为空洞，且具备多个翅片6b。翅片6b之间成为制冷剂通路6a。制冷剂未被特别地限定，例如，可以使用乙烯乙二醇水溶液、水等液体制冷剂，也可以使用空气那样的气体制冷剂，还可以使用像含氯氟烃那样的在冷却器蒸发并以气化热来冷却冷却器的可相变的制冷剂。
DCB基板2由陶瓷绝缘基板2a、第三金属箔2b、第四金属箔2c构成，在陶瓷绝缘基板2a的上表面配置有第三金属箔2b，在陶瓷绝缘基板2a的下表面配置有第四金属箔2c。DCB基板2的第三金属箔2b与半导体元件1的下表面接合。DCB是Direct Copper Bonding的缩写，在陶瓷绝缘基板上直接接合铜等金属箔。由于陶瓷绝缘基板2a是绝缘的，第三金属箔2b和第四金属箔2c被电绝缘。需要说明的是，陶瓷绝缘基板2a的材质未被特别地限定，优选为热传导率高的材料，可以使用例如Si3N4、AIN、AI2O3。
焊料3a将半导体元件1的下表面和第三金属箔2b连接来进行电连接和热连接。焊料3b将DCB基板2的第四金属箔2c与第一冷却器6的外壁连接，将从半导体元件1传导至DCB基板2的热量传导至第一冷却器6。
外部端子7a、7b为使半导体元件1和外部之间导通的端子，使主电力导通。外部端子7a、7b与DCB基板2的第三金属箔2b通过焊料电连接，从上表面向外部导出。半导体模块100具备未图示的控制端子。控制端子为用于控制半导体元件1的端子，从外部控制半导体元件1。
密封树脂8对除以下区域进行密封，该区域包括半导体模块100的第一冷却器6、第一冷却器6的与第四金属箔2c的接合面、向外部端子7a，7b的外部导出的区域、向未图示的控制端子的外部导出的区域。密封树脂8具有预定的绝缘性能，只要成形性良好就不受到特别地限定，例如，可以优选环氧树脂等。
图1所示的半导体模块只具有一个半导体元件，但是也可以具备多个由半导体元件1和销4构成的组合。通过将多个半导体元件1并联连接，可以增加半导体模块能够处理的额定输出。另外，多个半导体元件1的种类也可以变更为各种不同的种类的半导体元件。例如，也可以是将IGBT与FWD并联连接的结构。
接下来，对半导体元件1和销4的接合部的详细情况以及其作用效果进行说明。
销4通过焊料3c被焊接到半导体元件1的上表面。在焊料3c的表面和销布线基板5的第一金属箔(电路层)5b之间设有间隙。
这里，将焊料的高度设为H，将从半导体元件到销布线用绝缘基板的上述第一金属箔之间的距离设为T。销与焊料之间的界面的端的部分存在焊料在销的周围上升的情况。上述焊料的高度H是指，从上述半导体元件与焊料之间的界面到上述焊料的上表面的最下面的高度。在存在多个上述销时，上述焊料的高度H是指，上述半导体元件与焊料之间的界面到销和销之间的焊料的上表面的最下面的高度。
在本申请的半导体模块中，上述焊料的高度H与从上述半导体元件到上述销布线用绝缘基板的上述第一金属箔之间的距离T之比H/T优选为在0.2以上且0.7以下。若H/T不足0.2，则过渡热状态下的上述焊料的蓄热效果不充分，半导体元件最高温度Tj会超过安全温度范围。若高于0.7，则对半导体元件作用的应力变得过大，在高温动作试验、热周期试验下会被破坏。
根据这样的结构，焊料的高度H与从上述半导体元件到上述销布线用绝缘基板的上述第一金属箔的距离T之比H/T在0.2以上且0.7以下的范围内，因此通过上述焊料的蓄热效果能够降低过渡热状态下的半导体元件最高温度Tj，并且，能够减少对半导体元件的应力。
另外，在上述的半导体模块中，优选为上述H/T在0.26以上且0.53以下的范围内。根据这样的结构，能够进一步提高半导体模块的冷却能力，还能够降低作用于半导体元件的应力，能够提高半导体模块的寿命。
另外，在上述的半导体模块中，优选为上述焊料的线膨胀系数小于22.0ppm/K。并且，进一步优选为上述焊料的线膨胀系数在21.2ppm/K以下。在焊料的线膨胀系数为22.0ppm/K以上的情况下，当半导体元件发热时，因销和焊料的线膨胀系数不同而产生热应力，容易对半导体元件施加热应力。
根据这样的结构，能够使焊料的线膨胀系数接近销的线膨胀系数，能够减小作用于半导体元件的热应力。销的材质只要是热传导率高且接近焊料的线膨胀系数的金属，就不受到特别地限定，优选使用热传导率高的铜。具体地，上述焊料可以优选使用SnSb系焊料、SnAg系焊料。SnSb系焊料主要成分优选为Sn13Sb,该SnSb系焊料以质量百分比计含有13％的Sb来作为主要成分。Sn13Sb焊料线膨胀系数在21.2ppm/K以下，因此能够减少作用于半导体元件的热应力。
本发明的作用效果可以通过热模拟以及热应力模拟来验证。以下，对图1示出的半导体模块的模拟结果进行说明。
图2表示焊料高度H与半导体元件最高温度Tj的关系。可知焊料高度H越高，越能够减少半导体元件1的动作时的半导体元件最高温度Tj。
图3为表示从图2换算得到的、焊料高度与半导体元件最高温度Tj的减少率的关系的图。可知通过增加焊料高度H，可以达到最大9％的温度减少效果。
图4为表示焊料高度H和作用于半导体元件1的应力的关系的图。可知若增加焊料高度H，则芯片应力增加，且超过240MPa。
图5为表示焊料高度比H/T和半导体元件最高温度Tj的减少率的关系的图，图6为焊料高度比H/T和作用于半导体元件1的应力的减少率的关系的图。在焊料高度比H/T在0.2以上的情况下，可以将半导体元件最高温度Tj减少2％以上，将安全温度范围增加4℃。另外，在焊料高度比H/T在0.7以下的情况下，能够减小应力6％以上，在高温动作试验下的故障率得到改善。
如以上那样，根据本发明的实施例，能够提供在利用销接合的半导体模块中，能够提高冷却能力的半导体模块。
符号说明
1：半导体元件
2：DCB基板
2a：陶瓷绝缘基板
2b：第三金属箔
2c：第四金属箔
3a，3b，3c：焊料
4：销
5：销布线基板
5a：销布线用绝缘基板
5b：第一金属箔(电路层)
5c：第二金属箔
6：第一冷却器
6a：第一制冷剂通路
6b：翅片
7a，7b：外部端子
8：密封树脂
100：半导体模块

Claims (8)

1.一种半导体模块，其特征在于，具备：
半导体元件；
销，其与所述半导体元件的上表面电连接以及热连接；
销布线基板，其具备销布线用绝缘基板、配置在所述销布线用绝缘基板的下表面的第一金属箔、以及配置在所述销布线用绝缘基板的上表面的第二金属箔，并且，所述第一金属箔和所述第二金属箔与所述销电接合；
焊料，其将所述销和所述半导体元件接合；
覆铜陶瓷基板，其具备陶瓷绝缘基板、配置在所述陶瓷绝缘基板的上表面的第三金属箔，以及配置在所述陶瓷绝缘基板的下表面的第四金属箔，所述第三金属箔与所述半导体元件的下表面接合；以及
第一冷却器，其与所述第四金属箔热连接，
其中，整个所述焊料与相对于一个所述半导体元件配置的多个所述销连接，
从所述半导体元件与所述焊料之间的界面到所述焊料的上表面的最下面的高度H与从所述半导体元件到所述销布线用绝缘基板的所述第一金属箔之间的距离T之比H/T在0.2以上且0.7以下的范围内。
2.根据权利要求1记载的半导体模块，其特征在于，所述焊料的线膨胀系数小于22.0ppm/K。
3.根据权利要求1记载的半导体模块，其特征在于，所述焊料为SnSb系焊料。
4.根据权利要求3记载的半导体模块，其特征在于，所述SnSb系焊料以质量百分比计含有13％的Sb来作为主要成分。
5.根据权利要求1记载的半导体模块，其特征在于，所述焊料为SnAg系焊料。
6.根据权利要求2记载的半导体模块，其特征在于，所述焊料为SnSb系焊料。
7.根据权利要求6记载的半导体模块，其特征在于，所述SnSb系焊料以质量百分比计含有13％的Sb来作为主要成分。
8.根据权利要求2记载的半导体模块，其特征在于，所述焊料为SnAg系焊料。
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