WO2015064231A1 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- WO2015064231A1 WO2015064231A1 PCT/JP2014/074484 JP2014074484W WO2015064231A1 WO 2015064231 A1 WO2015064231 A1 WO 2015064231A1 JP 2014074484 W JP2014074484 W JP 2014074484W WO 2015064231 A1 WO2015064231 A1 WO 2015064231A1
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- Prior art keywords
- metal foil
- solder
- semiconductor element
- pin
- semiconductor module
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 229910000679 solder Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000011888 foil Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000000919 ceramic Substances 0.000 claims description 15
- 229910006913 SnSb Inorganic materials 0.000 claims description 6
- 229910007637 SnAg Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 abstract description 9
- 230000035882 stress Effects 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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Abstract
Description
2 DCB基板
2a セラミック絶縁基板
2b 第3金属箔
2c 第4金属箔
3a,3b,3c ハンダ
4 ピン
5 ピン配線基板
5a ピン配線用絶縁基板
5b 第1金属箔(回路層)
5c 第2金属箔
6 第1冷却器
6a 第1冷媒通路
6b フィン
7a,7b 外部端子
8 封止樹脂
100 半導体モジュール
Claims (5)
- 半導体素子と、
前記半導体素子の一方の面に電気的および熱的に接続されたピンと、
ピン配線用絶縁基板、前記ピン配線用絶縁基板の下面に配置した第1金属箔、および前記ピン配線用絶縁基板の上面に配置した第2金属箔を備えており、かつ前記第1金属箔と前記第2金属箔と前記ピンとが電気的に接合しているピン配線基板と、
前記ピンと前記半導体素子を接合したハンダと、
セラミック絶縁基板、前記セラミック絶縁基板の上面に配置した第3金属箔、および前記セラミック絶縁基板の下面に配置した第4金属箔を備えており、前記第3金属箔が前記半導体素子の下面に接合されているDCB基板と、
前記第4金属箔に熱的に接続された第1冷却器と、
を備えた半導体モジュールであって、
前記ハンダの高さHと、前記半導体素子から前記ピン配線用絶縁基板の前記第1金属箔までの間の距離Tとの比であるH/Tが0.2以上、0.7以下の範囲内であることを特徴とする半導体モジュール。 - 前記ハンダの線膨張係数が22.0ppm/K未満である請求項1に記載の半導体モジュール。
- 前記ハンダは、SnSb系ハンダである請求項1又は2に記載の半導体モジュール。
- 前記SnSb系ハンダは、主成分としてSbを13質量%含有する請求項3に記載の半導体モジュール。
- 前記ハンダは、SnAg系ハンダである請求項1又は2に記載の半導体モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112014001491.5T DE112014001491T5 (de) | 2013-10-30 | 2014-09-17 | Halbleitermodul |
CN201480020473.6A CN105103286B (zh) | 2013-10-30 | 2014-09-17 | 半导体模块 |
JP2015544858A JP6149938B2 (ja) | 2013-10-30 | 2014-09-17 | 半導体モジュール |
US14/878,596 US9299637B2 (en) | 2013-10-30 | 2015-10-08 | Semiconductor module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013225513 | 2013-10-30 | ||
JP2013-225513 | 2013-10-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/878,596 Continuation US9299637B2 (en) | 2013-10-30 | 2015-10-08 | Semiconductor module |
Publications (1)
Publication Number | Publication Date |
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WO2015064231A1 true WO2015064231A1 (ja) | 2015-05-07 |
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ID=53003844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2014/074484 WO2015064231A1 (ja) | 2013-10-30 | 2014-09-17 | 半導体モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US9299637B2 (ja) |
JP (1) | JP6149938B2 (ja) |
CN (1) | CN105103286B (ja) |
DE (1) | DE112014001491T5 (ja) |
WO (1) | WO2015064231A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022244392A1 (ja) | 2021-05-18 | 2022-11-24 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015064232A1 (ja) * | 2013-10-29 | 2015-05-07 | 富士電機株式会社 | 半導体モジュール |
DE102016216207A1 (de) | 2016-08-29 | 2018-03-01 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mikromechanischen Sensors |
DE102016218207A1 (de) * | 2016-09-22 | 2018-03-22 | Robert Bosch Gmbh | Elektronische Baugruppe, insbesondere eine elektronische Leistungsbaugruppe für Hybridfahrzeuge oder Elektrofahrzeuge |
JP7006024B2 (ja) * | 2017-08-30 | 2022-01-24 | 富士電機株式会社 | 半導体装置及びその製造方法 |
CN108493244A (zh) * | 2018-05-29 | 2018-09-04 | 杭州玄冰科技有限公司 | 一种功率管 |
Citations (4)
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JP2009231690A (ja) * | 2008-03-25 | 2009-10-08 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP2011138968A (ja) * | 2009-12-28 | 2011-07-14 | Senju Metal Ind Co Ltd | 面実装部品のはんだ付け方法および面実装部品 |
JP2013089809A (ja) * | 2011-10-19 | 2013-05-13 | Fuji Electric Co Ltd | 半導体装置とその製造方法 |
JP2013125804A (ja) * | 2011-12-14 | 2013-06-24 | Fuji Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
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JP5241177B2 (ja) | 2007-09-05 | 2013-07-17 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
JP5268786B2 (ja) * | 2009-06-04 | 2013-08-21 | 三菱電機株式会社 | 半導体モジュール |
JP5527330B2 (ja) | 2010-01-05 | 2014-06-18 | 富士電機株式会社 | 半導体装置用ユニットおよび半導体装置 |
JP5732880B2 (ja) * | 2011-02-08 | 2015-06-10 | 株式会社デンソー | 半導体装置及びその製造方法 |
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2014
- 2014-09-17 JP JP2015544858A patent/JP6149938B2/ja not_active Expired - Fee Related
- 2014-09-17 CN CN201480020473.6A patent/CN105103286B/zh not_active Expired - Fee Related
- 2014-09-17 WO PCT/JP2014/074484 patent/WO2015064231A1/ja active Application Filing
- 2014-09-17 DE DE112014001491.5T patent/DE112014001491T5/de not_active Withdrawn
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2015
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009231690A (ja) * | 2008-03-25 | 2009-10-08 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP2011138968A (ja) * | 2009-12-28 | 2011-07-14 | Senju Metal Ind Co Ltd | 面実装部品のはんだ付け方法および面実装部品 |
JP2013089809A (ja) * | 2011-10-19 | 2013-05-13 | Fuji Electric Co Ltd | 半導体装置とその製造方法 |
JP2013125804A (ja) * | 2011-12-14 | 2013-06-24 | Fuji Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
Cited By (1)
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WO2022244392A1 (ja) | 2021-05-18 | 2022-11-24 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
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JP6149938B2 (ja) | 2017-06-21 |
DE112014001491T5 (de) | 2015-12-10 |
JPWO2015064231A1 (ja) | 2017-03-09 |
CN105103286A (zh) | 2015-11-25 |
CN105103286B (zh) | 2018-01-23 |
US20160027716A1 (en) | 2016-01-28 |
US9299637B2 (en) | 2016-03-29 |
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