CN1058809C - 制造cmos晶体管的方法 - Google Patents

制造cmos晶体管的方法 Download PDF

Info

Publication number
CN1058809C
CN1058809C CN96113302A CN96113302A CN1058809C CN 1058809 C CN1058809 C CN 1058809C CN 96113302 A CN96113302 A CN 96113302A CN 96113302 A CN96113302 A CN 96113302A CN 1058809 C CN1058809 C CN 1058809C
Authority
CN
China
Prior art keywords
forming
transistor
gate electrode
well
common gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN96113302A
Other languages
English (en)
Chinese (zh)
Other versions
CN1149763A (zh
Inventor
郑採贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of CN1149763A publication Critical patent/CN1149763A/zh
Application granted granted Critical
Publication of CN1058809C publication Critical patent/CN1058809C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN96113302A 1995-08-25 1996-08-25 制造cmos晶体管的方法 Expired - Fee Related CN1058809C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR26537/1995 1995-08-25
KR26537/95 1995-08-25
KR1019950026537A KR0149256B1 (ko) 1995-08-25 1995-08-25 씨모스 트랜지스터 제조방법

Publications (2)

Publication Number Publication Date
CN1149763A CN1149763A (zh) 1997-05-14
CN1058809C true CN1058809C (zh) 2000-11-22

Family

ID=19424476

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96113302A Expired - Fee Related CN1058809C (zh) 1995-08-25 1996-08-25 制造cmos晶体管的方法

Country Status (5)

Country Link
US (1) US5856215A (OSRAM)
JP (1) JPH09107038A (OSRAM)
KR (1) KR0149256B1 (OSRAM)
CN (1) CN1058809C (OSRAM)
TW (1) TW302526B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101271900B (zh) * 2007-02-17 2012-03-21 精工电子有限公司 半导体器件

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176949A (ja) * 1997-12-15 1999-07-02 Sony Corp 半導体装置
KR100424170B1 (ko) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 반도체 소자의 풀 씨모스 에스램 셀 제조방법
KR100464664B1 (ko) * 2003-03-12 2005-01-03 주식회사 하이닉스반도체 고전압 소자의 웰 구조
JP2008210902A (ja) * 2007-02-24 2008-09-11 Seiko Instruments Inc カレントミラー回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460833A1 (en) * 1990-05-31 1991-12-11 STMicroelectronics, Inc. Field effect device with polycrystaline silicon channel

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107066A (en) * 1980-12-25 1982-07-03 Toshiba Corp Complementary semiconductor device and manufacture thereof
JPS5817655A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 半導体装置の製造方法
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
JPS61207052A (ja) * 1985-03-12 1986-09-13 Sanyo Electric Co Ltd 高耐圧ｃｍｏｓ半導体装置
DE3650638T2 (de) * 1985-03-22 1998-02-12 Nippon Electric Co Integrierte Halbleiterschaltung mit Isolationszone
JPH01289157A (ja) * 1988-05-17 1989-11-21 Fujitsu Ltd 相補型ｍｏｓトランジスタとその製造方法
JPH01308067A (ja) * 1988-06-06 1989-12-12 Nec Corp 半導体装置
JPH0252463A (ja) * 1988-08-17 1990-02-22 Texas Instr Japan Ltd 半導体集積回路装置
JPH0340463A (ja) * 1989-03-15 1991-02-21 Hitachi Ltd 半導体装置及びその製造方法
JPH0758701B2 (ja) * 1989-06-08 1995-06-21 株式会社東芝 半導体装置の製造方法
JP3184298B2 (ja) * 1992-05-28 2001-07-09 沖電気工業株式会社 Ｃｍｏｓ出力回路
US5506161A (en) * 1994-10-24 1996-04-09 Motorola, Inc. Method of manufacturing graded channels underneath the gate electrode extensions

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460833A1 (en) * 1990-05-31 1991-12-11 STMicroelectronics, Inc. Field effect device with polycrystaline silicon channel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101271900B (zh) * 2007-02-17 2012-03-21 精工电子有限公司 半导体器件

Also Published As

Publication number Publication date
US5856215A (en) 1999-01-05
JPH09107038A (ja) 1997-04-22
KR0149256B1 (ko) 1998-10-01
TW302526B (OSRAM) 1997-04-11
CN1149763A (zh) 1997-05-14
KR970013406A (ko) 1997-03-29

Similar Documents

Publication Publication Date Title
US5753550A (en) Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
JPH07211799A (ja) Ｄｒａｍセルの製造方法
CN1058809C (zh) 制造cmos晶体管的方法
US5650346A (en) Method of forming MOSFET devices with buried bitline capacitors
US5936289A (en) Semiconductor device
JP3775803B2 (ja) 半導体集積回路装置およびその製造方法
US4570175A (en) Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations
JPH0969577A (ja) Ｓｒａｍセル
JP2001526003A (ja) Ｍｏｓトランジスタを有する半導体装置
JP2547800B2 (ja) 半導体集積回路装置及びその製造方法
US5895945A (en) Single polysilicon neuron MOSFET
US5773855A (en) Microelectronic circuit including silicided field-effect transistor elements that bifunction as interconnects
JPH08330440A (ja) シリコン・オン・インシュレータ半導体装置
JPS6195563A (ja) 半導体記憶装置
US6544830B2 (en) Method of manufacturing a semiconductor device with multiple emitter contact plugs
JP2544419B2 (ja) 半導体集積回路装置及びその製造方法
JPH02148852A (ja) 半導体装置およびその製造方法
US6396110B1 (en) Semiconductor device with multiple emitter contact plugs
KR100369695B1 (ko) 메모리 셀, 반도체 집적회로 및 그 제조 방법
JP3009450B2 (ja) 半導体集積回路装置及びその製造方法
KR100325469B1 (ko) 반도체장치의금속배선시콘택부형성방법및그구조
JPH05291512A (ja) 半導体装置の製造方法
JP2001332639A (ja) Ｍｏｓ型半導体記憶装置およびその製造方法
JPS58142564A (ja) 半導体装置とその製造方法
JPS63293858A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20001122

Termination date: 20100825