KR0149256B1 - 씨모스 트랜지스터 제조방법 - Google Patents

씨모스 트랜지스터 제조방법

Info

Publication number
KR0149256B1
KR0149256B1 KR1019950026537A KR19950026537A KR0149256B1 KR 0149256 B1 KR0149256 B1 KR 0149256B1 KR 1019950026537 A KR1019950026537 A KR 1019950026537A KR 19950026537 A KR19950026537 A KR 19950026537A KR 0149256 B1 KR0149256 B1 KR 0149256B1
Authority
KR
South Korea
Prior art keywords
forming
region
transistor
ion implantation
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950026537A
Other languages
English (en)
Korean (ko)
Other versions
KR970013406A (ko
Inventor
정채현
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019950026537A priority Critical patent/KR0149256B1/ko
Priority to US08/701,585 priority patent/US5856215A/en
Priority to JP8221622A priority patent/JPH09107038A/ja
Priority to TW085110288A priority patent/TW302526B/zh
Priority to CN96113302A priority patent/CN1058809C/zh
Publication of KR970013406A publication Critical patent/KR970013406A/ko
Application granted granted Critical
Publication of KR0149256B1 publication Critical patent/KR0149256B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019950026537A 1995-08-25 1995-08-25 씨모스 트랜지스터 제조방법 Expired - Fee Related KR0149256B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019950026537A KR0149256B1 (ko) 1995-08-25 1995-08-25 씨모스 트랜지스터 제조방법
US08/701,585 US5856215A (en) 1995-08-25 1996-08-22 Method of fabricating a CMOS transistor
JP8221622A JPH09107038A (ja) 1995-08-25 1996-08-23 Ｃｍｏｓトランジスターの製造方法
TW085110288A TW302526B (OSRAM) 1995-08-25 1996-08-23
CN96113302A CN1058809C (zh) 1995-08-25 1996-08-25 制造cmos晶体管的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950026537A KR0149256B1 (ko) 1995-08-25 1995-08-25 씨모스 트랜지스터 제조방법

Publications (2)

Publication Number Publication Date
KR970013406A KR970013406A (ko) 1997-03-29
KR0149256B1 true KR0149256B1 (ko) 1998-10-01

Family

ID=19424476

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950026537A Expired - Fee Related KR0149256B1 (ko) 1995-08-25 1995-08-25 씨모스 트랜지스터 제조방법

Country Status (5)

Country Link
US (1) US5856215A (OSRAM)
JP (1) JPH09107038A (OSRAM)
KR (1) KR0149256B1 (OSRAM)
CN (1) CN1058809C (OSRAM)
TW (1) TW302526B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424170B1 (ko) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 반도체 소자의 풀 씨모스 에스램 셀 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176949A (ja) * 1997-12-15 1999-07-02 Sony Corp 半導体装置
KR100464664B1 (ko) * 2003-03-12 2005-01-03 주식회사 하이닉스반도체 고전압 소자의 웰 구조
JP2008205053A (ja) * 2007-02-17 2008-09-04 Seiko Instruments Inc 半導体装置
JP2008210902A (ja) * 2007-02-24 2008-09-11 Seiko Instruments Inc カレントミラー回路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107066A (en) * 1980-12-25 1982-07-03 Toshiba Corp Complementary semiconductor device and manufacture thereof
JPS5817655A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 半導体装置の製造方法
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
JPS61207052A (ja) * 1985-03-12 1986-09-13 Sanyo Electric Co Ltd 高耐圧ｃｍｏｓ半導体装置
DE3650638T2 (de) * 1985-03-22 1998-02-12 Nippon Electric Co Integrierte Halbleiterschaltung mit Isolationszone
JPH01289157A (ja) * 1988-05-17 1989-11-21 Fujitsu Ltd 相補型ｍｏｓトランジスタとその製造方法
JPH01308067A (ja) * 1988-06-06 1989-12-12 Nec Corp 半導体装置
JPH0252463A (ja) * 1988-08-17 1990-02-22 Texas Instr Japan Ltd 半導体集積回路装置
US5135888A (en) * 1989-01-18 1992-08-04 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
JPH0340463A (ja) * 1989-03-15 1991-02-21 Hitachi Ltd 半導体装置及びその製造方法
JPH0758701B2 (ja) * 1989-06-08 1995-06-21 株式会社東芝 半導体装置の製造方法
JP3184298B2 (ja) * 1992-05-28 2001-07-09 沖電気工業株式会社 Ｃｍｏｓ出力回路
US5506161A (en) * 1994-10-24 1996-04-09 Motorola, Inc. Method of manufacturing graded channels underneath the gate electrode extensions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424170B1 (ko) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 반도체 소자의 풀 씨모스 에스램 셀 제조방법

Also Published As

Publication number Publication date
US5856215A (en) 1999-01-05
JPH09107038A (ja) 1997-04-22
TW302526B (OSRAM) 1997-04-11
CN1149763A (zh) 1997-05-14
CN1058809C (zh) 2000-11-22
KR970013406A (ko) 1997-03-29

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