CN105826167A - 半导体设备用衬底以及其制造方法 - Google Patents

半导体设备用衬底以及其制造方法 Download PDF

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CN105826167A
CN105826167A CN201610045414.5A CN201610045414A CN105826167A CN 105826167 A CN105826167 A CN 105826167A CN 201610045414 A CN201610045414 A CN 201610045414A CN 105826167 A CN105826167 A CN 105826167A
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西口浩平
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Abstract

本发明的目的在于提供一种能够利用将红色光或者红外光用于检测衬底的有无的半导体制造装置而无弊病地进行处理的半导体设备用衬底、以及该衬底的制造方法。本申请的技术方案涉及的半导体设备用衬底的特征在于具有：衬底(10)；防透金属和该衬底的材料相混合的反应层(12)，其设置在该衬底的背面，该防透金属与该衬底相比，红色光或者红外光的透过率低；以及金属薄膜层(14)，其形成在该反应层的背面，材料与该防透金属相同。

Description

半导体设备用衬底以及其制造方法
技术领域
本发明涉及例如用于制成半导体设备的衬底以及该衬底的制造方法。
背景技术
为了在半导体衬底上制作具有晶体管、电阻、以及电容器等的电路，对衬底实施各种各样的处理。例如，利用半导体制造装置在衬底上形成金属薄膜或者绝缘膜，或者利用曝光装置将抗蚀剂图案化。
在对衬底实施各种各样的处理的晶圆工艺中，由半导体制造装置内的衬底识别传感器，对衬底的有无进行检测。在Si衬底或者GaAs衬底的有无的检测中，利用这些衬底吸收(或者反射)红色光或者红外光的性质。具体地说，在红色光或者红外光射入至传感器时，识别为无衬底。另外，在红色光或者红外光被衬底吸收而不射入至传感器时，识别为具有衬底。
近年，在功率设备或者高频设备，有时使用与Si相比带隙较宽的SiC或者GaN等化合物半导体衬底。由于SiC或者GaN对于红色光或者红外光是透明的，因此不能够利用红色光或者红外光检测衬底的有无。
在专利文献1中，公开了利用设置在衬底的端部的全反射面对红色光等进行反射。
专利文献1：日本特开2010-141124号公报
在Si衬底或者GaAs衬底等的处理所用的半导体制造装置中，利用红色光或者红外光对衬底的有无进行检测。如果为了检测对于红色光或者红外光透明的衬底而构建新的检测系统则成本变高。因此，优选利用根据红色光或者红外光检测衬底的有无的已有半导体制造装置，处理对于这些光透明的衬底。但是，在专利文献1公开的技术中，因为在衬底的端部设置全反射面，所以存在在衬底中央部不能够检测衬底的有无的问题。
能够想到在对于红色光或者红外光透明的衬底的背面侧，形成红色光或者红外光的透过率低的Cr、W、Al等金属薄膜层，实现衬底的检测。但是，在反复进行热处理、干蚀刻、湿蚀刻、以及药液处理等的过程中，有时该金属薄膜层剥落、或者被蚀刻。
发明内容
本发明就是为了解决上述课题而提出的，其目的在于，提供一种能够利用将红色光或者红外光用于检测衬底的有无的半导体制造装置而无弊病地进行处理的半导体设备用衬底、以及该衬底的制造方法。
本申请的技术方案涉及的半导体设备用衬底的特征在于，具有：衬底；防透金属和该衬底的材料相混合的反应层，其设置在该衬底的背面，该防透金属与该衬底相比，红色光或者红外光的透过率低；以及金属薄膜层，其形成在该反应层的背面，材料与该防透金属相同。
本申请的技术方案涉及的半导体设备用衬底的制造方法的特征在于，具有下述工序：在衬底的背面，形成与该衬底相比红色光或者红外光的透过率低的金属薄膜层的工序；以及反应工序，对该衬底和该金属薄膜层进行加热，使该金属薄膜层的材料扩散至该衬底，形成该衬底的材料和该金属薄膜层的材料相混合的反应层。
发明的效果
根据本发明，通过使金属薄膜层的成分扩散至衬底，从而能够抑制金属薄膜层的剥落以及蚀刻。
附图说明
图1是实施方式1涉及的半导体设备用衬底的主视图。
图2是表示衬底的有无的检测方法的图。
图3是实施方式2涉及的半导体设备用衬底的主视图。
图4是实施方式3涉及的半导体设备用衬底的主视图。
图5是实施方式4涉及的半导体设备用衬底的主视图。
标号的说明
10衬底，12反应层，14金属薄膜层，16传感器，20半导体层，22绝缘膜，30蚀刻保护膜，40追加金属薄膜层。
具体实施方式
参照附图对本发明的实施方式涉及的半导体设备用衬底和该衬底的制造方法进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1
图1是本发明的实施方式1涉及的半导体设备用衬底的主视图。实施方式1涉及的半导体设备用衬底具有衬底10。衬底10例如由SiC或者GaN等对于红色光或者红外光透明的材料所形成。在衬底10的背面设置有反应层12。反应层12是与衬底10相比红色光或者红外光的透过率低的防透金属和衬底10的材料相混合的层。
在反应层12的背面形成有金属薄膜层14。金属薄膜层14由与上述的防透金属相同的材料所形成。金属薄膜层14例如由包含Ni的合金或者Ni所形成。包含Ni的合金例如是NiCr、NiFe、NiMo、NiTi、或者NiW。
对本发明的实施方式1涉及的半导体设备用衬底的制造方法进行说明。首先，在衬底10的背面，形成红色光或者红外光的透过率低于衬底10的金属薄膜层14。金属薄膜层14例如利用蒸镀法或者溅射法而形成。
接着，实施反应工序。在反应工序中，对衬底10和金属薄膜层14进行加热，使金属薄膜层14的材料扩散至衬底10，形成衬底10的材料和金属薄膜层14的材料相混合的反应层12。衬底10和金属薄膜层14优选利用快速热退火法等加热至大于或等于850℃。
对这样完成的衬底，反复实施用于在衬底上形成半导体元件的热处理、干蚀刻、湿蚀刻、以及药液处理等。而且，在进行衬底的操作(输送)或者定位等时，向有衬底的地方或者无衬底的地方照射红色光或者红外光，检测衬底的有无。图2是表示衬底的有无的检测方法的图。作为红色光或者红外光的光线15射入至衬底并被金属薄膜层14反射。这种情况下，由于光线15不射入至传感器16，因此识别为在半导体制造装置内存在衬底。另一方面，在光线15射入至传感器16的情况下识别为在半导体制造装置内无衬底。
但是，仅利用蒸镀法、溅射法、或者化学气相生长法形成金属薄膜层(Cr、W、Ar等)，金属薄膜层相对于衬底的附着力较弱。在晶圆工艺中，如果金属薄膜层剥落、或者被蚀刻，则变得不能检测衬底的有无，会引起衬底识别错误。为了防止这种情况，在本发明的实施方式1中，使金属薄膜层14的成分扩散至衬底10而形成了反应层12。反应层12会提高衬底10与金属薄膜层14的附着力。利用反应层12，能够防止金属薄膜层14剥落、或者被蚀刻的情况。因此，能够利用将红色光或者红外光用于检测衬底的有无的半导体制造装置而无弊病地进行处理。
本发明的实施方式1涉及的半导体设备用衬底，由于在衬底10的背面整体形成有反应层12以及金属薄膜层14，因此既可以使红色光或者红外光射入至衬底的端部，也可以射入至衬底的中央部。
本发明的实施方式1涉及的半导体设备用衬底的特征在于，利用反应层12防止了金属薄膜层14的剥落等。在不失该特征的范围内能够进行各种各样的变形。例如，也可以在衬底10上形成(透明的)衬底或者半导体层。此外，关于下述的实施方式涉及的半导体设备用衬底和该衬底的制造方法，由于与实施方式1的共同点多，因此以与实施方式1的不同点为中心进行说明。
实施方式2
图3是实施方式2涉及的半导体设备用衬底的主视图。该衬底具有：半导体层20，其形成在衬底10的表面；以及绝缘膜22，其形成在半导体层20的表面。绝缘膜22例如是SiN膜或者SiO膜。
对实施方式2涉及的半导体设备用衬底的制造方法进行说明。在反应工序之前，在衬底10的表面形成半导体层20，在半导体层20的表面形成绝缘膜22。绝缘膜22利用化学气相生长法或者溅射法而形成。然后，实施反应工序。在反应工序中由于衬底会变为高温，因此有可能会发生半导体层20的变质，但是利用绝缘膜22能够防止半导体层20的变质。由此，即使是在反应工序之前在衬底10上形成有半导体层20的情况下，也能够通过设置绝缘膜22而防止半导体层20的变质。
实施方式3
图4是实施方式3涉及的半导体设备用衬底的主视图。该衬底在金属薄膜层14的背面具有蚀刻保护膜30。蚀刻保护膜30由SiC、HfO2、ZnO2、或者贵金属所形成。贵金属例如是Au、Pt、或者Pd。蚀刻保护膜30在晶圆工艺的蚀刻工序中难以被蚀刻。
蚀刻保护膜30是在金属薄膜层14的背面，利用真空蒸镀法、溅射法、化学气相生长法、或者ALD法而形成的。既可以在反应工序之前形成蚀刻保护膜30，也可以在反应工序之后形成蚀刻保护膜30。
因为在晶圆工艺中多次地实施蚀刻处理，所以存在金属薄膜层14由于该蚀刻处理而发生膜减少的可能。因此，在本发明的实施方式3中，在金属薄膜层14的背面设置了蚀刻保护膜30。利用蚀刻保护膜30，能够抑制由蚀刻处理引起的金属薄膜层14的膜减少。
实施方式4
图5是实施方式4涉及的半导体设备用衬底的主视图。在金属薄膜层14的背面形成有追加金属薄膜层40。追加金属薄膜层40例如由W、Cr、或者Al所形成。由W、Cr、或者Al所形成的追加金属薄膜层40与由包含Ni的合金或者Ni所形成的金属薄膜层14相比对于红色光或者红外光的透过率较低。在追加金属薄膜层40的背面形成有蚀刻保护膜30。蚀刻保护膜30由SiC、HfO2、ZnO2、或者贵金属所形成。
本发明的实施方式4涉及的半导体设备用衬底的制造方法具有下述工序：在金属薄膜层14的背面，由W、Cr、或者Al形成追加金属薄膜层40的工序；以及在追加金属薄膜层40的背面，由SiC、HfO2、ZnO2、或者贵金属形成蚀刻保护膜30的工序。这些工序既可以在反应工序之前实施，也可以在反应工序之后实施。
与金属薄膜层14相比，追加金属薄膜层40对于红色光或者红外光的透过率较低，因此能够提高衬底的有无的检测精度。也可以省略蚀刻保护膜30。此外，也可以将至此为止已说明的各实施方式涉及的半导体设备用衬底以及半导体设备用衬底的制造方法的特征适当地进行组合而使用。

Claims (14)

1.一种半导体设备用衬底，其特征在于，
具有：
衬底；
防透金属和所述衬底的材料相混合的反应层，其设置在所述衬底的背面，该防透金属与所述衬底相比，红色光或者红外光的透过率低；以及
金属薄膜层，其形成在所述反应层的背面，材料与所述防透金属相同。
2.根据权利要求1所述的半导体设备用衬底，其特征在于，
具有：
半导体层，其形成在所述衬底的表面；以及
绝缘膜，其形成在所述半导体层的表面。
3.根据权利要求1或2所述的半导体设备用衬底，其特征在于，
在所述金属薄膜层的背面具有蚀刻保护膜，该蚀刻保护膜由SiC、HfO2、ZnO2或者贵金属所形成。
4.根据权利要求1或2所述的半导体设备用衬底，其特征在于，
在所述金属薄膜层的背面具有追加金属薄膜层，该追加金属薄膜层由W、Cr或者Al所形成。
5.根据权利要求4所述的半导体设备用衬底，其特征在于，
在所述追加金属薄膜层的背面具有蚀刻保护膜，该蚀刻保护膜由SiC、HfO2、ZnO2或者贵金属所形成。
6.根据权利要求1或2所述的半导体设备用衬底，其特征在于，
所述金属薄膜层由包含Ni的合金或者Ni所形成。
7.根据权利要求1或2所述的半导体设备用衬底，其特征在于，
所述衬底由SiC或者GaN所形成。
8.一种半导体设备用衬底的制造方法，其特征在于，
具有下述工序：
在衬底的背面，形成与所述衬底相比红色光或者红外光的透过率低的金属薄膜层的工序；以及
反应工序，对所述衬底和所述金属薄膜层进行加热，使所述金属薄膜层的材料扩散至所述衬底，形成所述衬底的材料和所述金属薄膜层的材料相混合的反应层。
9.根据权利要求8所述的半导体设备用衬底的制造方法，其特征在于，
在所述反应工序之前，具有下述工序：在所述衬底的表面形成半导体层，并在所述半导体层的表面形成绝缘膜。
10.根据权利要求8或9所述的半导体设备用衬底的制造方法，其特征在于，
具有下述工序：
在所述金属薄膜层的背面，由SiC、HfO2、ZnO2或者贵金属形成蚀刻保护膜。
11.根据权利要求8或9所述的半导体设备用衬底的制造方法，其特征在于，
具有下述工序：
在所述金属薄膜层的背面，由W、Cr或者Al形成追加金属薄膜层。
12.根据权利要求11所述的半导体设备用衬底的制造方法，其特征在于，
具有下述工序：
在所述追加金属薄膜层的背面，由SiC、HfO2、ZnO2或者贵金属形成蚀刻保护膜。
13.根据权利要求8或9所述的半导体设备用衬底的制造方法，其特征在于，
所述金属薄膜层由包含Ni的合金或者Ni所形成。
14.根据权利要求8或9所述的半导体设备用衬底的制造方法，其特征在于，
所述衬底由SiC或者GaN所形成。
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