CN104766807A - 一种检测化学气相沉积薄膜小微粒的方法 - Google Patents

一种检测化学气相沉积薄膜小微粒的方法 Download PDF

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Publication number
CN104766807A
CN104766807A CN201410004522.9A CN201410004522A CN104766807A CN 104766807 A CN104766807 A CN 104766807A CN 201410004522 A CN201410004522 A CN 201410004522A CN 104766807 A CN104766807 A CN 104766807A
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Prior art keywords
chemical vapor
vapor deposition
deposition film
thin film
small particle
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CN201410004522.9A
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崔永鹏
孙洪福
王铁渠
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Priority to CN201410004522.9A priority Critical patent/CN104766807A/zh
Publication of CN104766807A publication Critical patent/CN104766807A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

本发明公开了一种检测化学气相淀积薄膜小微粒的方法，至少包含以下步骤：步骤1、准备晶圆基材；步骤2、在晶圆基材上沉积金属；步骤3、在沉积金属上沉积化学气相淀积薄膜；步骤4、开始刻蚀过程；步骤5、利用表面扫描工具扫描化学气相淀积薄膜的缺陷。本发明能够检测到PECVD薄膜的小微粒，降低废料风险。

Description

一种检测化学气相沉积薄膜小微粒的方法
技术领域
本发明涉及半导体制造技术领域，具体涉及一种检测化学气相沉积薄膜小微粒的方法。
背景技术
等离子体增强化学气相沉积方法（Plasma Enhanced Chemical Vapor Deposition，PECVD）是制备薄膜材料的几种方法中技术最为成熟、操作较为简单的一种，并且可以制备均匀性高的大面积薄膜。现有技术中，PECVD方法制备的薄膜通常会含有小的微粒，这些小微粒不能够被良率改善表面扫描工具检测到，并且小微粒会影响晶圆的良率。
发明内容
本发明的目的在于提供一种检测化学气相沉积薄膜小微粒的方法，能够检测到PECVD薄膜的小微粒，降低废料风险。
为了达到上述目的，本发明通过以下技术方案实现：一种检测化学气相淀积薄膜小微粒的方法，其特征在于，至少包含以下步骤：
步骤1、准备晶圆基材；
步骤2、在晶圆基材上沉积金属；
步骤3、在沉积金属上沉积化学气相淀积薄膜；
步骤4、开始刻蚀过程；
步骤5、利用表面扫描工具扫描化学气相淀积薄膜的缺陷。
上述的步骤1中的晶圆基材为氧化物。
上述的步骤2中沉积的金属为铝。
上述的步骤4还包含以下步骤：
步骤4.1、将化学气相淀积薄膜刻蚀掉，仅剩下不易检测的小颗粒；
步骤4.2、进行金属刻蚀。
本发明与现有技术相比具有以下优点：由于晶圆基材为氧化物，便于金属基材更好的粘附于硅基材；由于沉积一层铝，方便监测薄膜的小微粒。
附图说明
图1为本发明一种检测化学气相淀积薄膜小微粒的方法的流程图。
具体实施方式
以下结合附图，通过详细说明一个较佳的具体实施例，对本发明做进一步阐述。
如图1所示，一种检测化学气相淀积薄膜小微粒的方法，其特征在于，至少包含以下步骤： 
步骤1、准备晶圆基材，晶圆基材为氧化物，能够提高金属基材和硅基材之间的附着力；
步骤2、在晶圆基材上沉积金属，沉积的金属主要为铝；
步骤3、在沉积金属上沉积化学气相淀积薄膜，此薄膜上有小的微粒；
步骤4、开始刻蚀过程；
步骤4.1、将化学气相淀积薄膜刻蚀掉，仅剩下不易检测的小颗粒；
步骤4.2、金属刻蚀，通入CL2/CHF3/N2，在压力为12mTorr的等离子体环境下进行干法刻蚀，晶圆的温度控制在40度，由于不同的刻蚀过程在化学气相沉积薄膜和金属层之间具有选择性，采用铝会容易监测出来，这样有缺陷的地方就有铝存在。
步骤5、利用表面扫描工具扫描化学气相淀积薄膜的缺陷，可以检测到0.1um左右的小颗粒。
尽管本发明的内容已经通过上述优选实施例作了详细介绍，但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后，对于本发明的多种修改和替代都将是显而易见的。因此，本发明的保护范围应由所附的权利要求来限定。

Claims (4)

1.一种检测化学气相淀积薄膜小微粒的方法，其特征在于，至少包含以下步骤：
步骤1、准备晶圆基材；
步骤2、在晶圆基材上沉积金属；
步骤3、在沉积金属上沉积化学气相淀积薄膜；
步骤4、开始刻蚀过程；
步骤5、利用表面扫描工具扫描化学气相淀积薄膜的缺陷。
2.如权利要求1所述的检测化学气相淀积薄膜小微粒的方法，其特征在于，所述的步骤1中的晶圆基材为氧化物。
3.如权利要求1所述的检测化学气相淀积薄膜小微粒的方法，其特征在于，所述的步骤2中沉积的金属为铝。
4.如权利要求1所述的检测化学气相淀积薄膜小微粒的方法，其特征在于，所述的步骤4还包含以下步骤：
步骤4.1、将化学气相淀积薄膜刻蚀掉，仅剩下不易检测的小颗粒；
步骤4.2、进行金属刻蚀。
CN201410004522.9A 2014-01-06 2014-01-06 一种检测化学气相沉积薄膜小微粒的方法 Pending CN104766807A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473370A (zh) * 2018-11-16 2019-03-15 上海华力微电子有限公司 一种晶圆表面颗粒的脱机检测方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5271796A (en) * 1991-03-27 1993-12-21 Kabushiki Kaisha Toshiba Method and apparatus for detecting defect on semiconductor substrate surface
US6975386B2 (en) * 2001-06-01 2005-12-13 Kabushiki Kaisha Toshiba Film quality inspecting method and film quality inspecting apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5271796A (en) * 1991-03-27 1993-12-21 Kabushiki Kaisha Toshiba Method and apparatus for detecting defect on semiconductor substrate surface
US6975386B2 (en) * 2001-06-01 2005-12-13 Kabushiki Kaisha Toshiba Film quality inspecting method and film quality inspecting apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C.E.MOROSANU: "《Thin films by Chemical Vapor Deposition》", 31 December 1990 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473370A (zh) * 2018-11-16 2019-03-15 上海华力微电子有限公司 一种晶圆表面颗粒的脱机检测方法

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