CN105489483A - 处理具有掩模的被处理体的方法 - Google Patents

处理具有掩模的被处理体的方法 Download PDF

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Publication number
CN105489483A
CN105489483A CN201510634852.0A CN201510634852A CN105489483A CN 105489483 A CN105489483 A CN 105489483A CN 201510634852 A CN201510634852 A CN 201510634852A CN 105489483 A CN105489483 A CN 105489483A
Authority
CN
China
Prior art keywords
plasma
gas
mask
processing apparatus
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510634852.0A
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English (en)
Chinese (zh)
Inventor
木原嘉英
久松亨
本田昌伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN202011049271.8A priority Critical patent/CN112133630B/zh
Publication of CN105489483A publication Critical patent/CN105489483A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN201510634852.0A 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法 Pending CN105489483A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011049271.8A CN112133630B (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-206614 2014-10-07
JP2014206614A JP6382055B2 (ja) 2014-10-07 2014-10-07 被処理体を処理する方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202011049271.8A Division CN112133630B (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法

Publications (1)

Publication Number Publication Date
CN105489483A true CN105489483A (zh) 2016-04-13

Family

ID=54199559

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201510634852.0A Pending CN105489483A (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法
CN202011049271.8A Active CN112133630B (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202011049271.8A Active CN112133630B (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法

Country Status (7)

Country Link
US (1) US9607811B2 (https=)
EP (1) EP3007205B1 (https=)
JP (1) JP6382055B2 (https=)
KR (1) KR102311575B1 (https=)
CN (2) CN105489483A (https=)
SG (1) SG10201508134VA (https=)
TW (1) TWI661464B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109155252A (zh) * 2016-05-25 2019-01-04 东京毅力科创株式会社 处理被处理体的方法
CN110581050A (zh) * 2018-06-07 2019-12-17 东京毅力科创株式会社 处理方法和等离子体处理装置

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JP6559430B2 (ja) 2015-01-30 2019-08-14 東京エレクトロン株式会社 被処理体を処理する方法
JP6462477B2 (ja) 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
KR102362282B1 (ko) * 2016-03-29 2022-02-11 도쿄엘렉트론가부시키가이샤 피처리체를 처리하는 방법
KR20170114579A (ko) 2016-04-05 2017-10-16 주식회사 만도 전압 제어 방법 및 그 제어 시스템
JP6832171B2 (ja) 2017-01-24 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法
JP6895352B2 (ja) * 2017-09-12 2021-06-30 東京エレクトロン株式会社 被加工物を処理する方法
JP6886940B2 (ja) * 2018-04-23 2021-06-16 東京エレクトロン株式会社 プラズマ処理方法
TWI820667B (zh) * 2018-06-19 2023-11-01 美商應用材料股份有限公司 間隙填充物沉積方法及類金剛石之碳的間隙填充物材料
JP7345283B2 (ja) * 2018-07-26 2023-09-15 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
CN116837349A (zh) * 2018-07-26 2023-10-03 东京毅力科创株式会社 等离子体处理装置
JP7178918B2 (ja) 2019-01-30 2022-11-28 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び処理システム
JP7240946B2 (ja) * 2019-04-26 2023-03-16 株式会社トリケミカル研究所 酸化珪素膜形成方法
US11955318B2 (en) * 2021-03-12 2024-04-09 Applied Materials, Inc. Ash rate recovery method in plasma strip chamber
TW202308466A (zh) * 2021-06-22 2023-02-16 日商東京威力科創股份有限公司 電漿處理方法、電漿處理裝置及電漿處理系統

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CN101903991A (zh) * 2007-12-18 2010-12-01 美光科技公司 用于隔离间距倍增材料环的部分的方法及相关结构
US20110237082A1 (en) * 2007-06-08 2011-09-29 Tokyo Electron Limited Micro pattern forming method
CN102822943A (zh) * 2010-04-02 2012-12-12 东京毅力科创株式会社 掩模图案的形成方法以及半导体装置的制造方法
WO2013125523A1 (ja) * 2012-02-20 2013-08-29 東京エレクトロン株式会社 電源システム、プラズマエッチング装置及びプラズマエッチング方法
CN104011837A (zh) * 2011-10-27 2014-08-27 应用材料公司 用于蚀刻低k及其它介电质膜的制程腔室

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JP2007123766A (ja) * 2005-10-31 2007-05-17 Tokyo Electron Ltd エッチング方法、プラズマ処理装置及び記憶媒体
JP5698950B2 (ja) * 2009-10-23 2015-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US8298951B1 (en) * 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
WO2014042192A1 (ja) * 2012-09-13 2014-03-20 東京エレクトロン株式会社 被処理基体を処理する方法、及びプラズマ処理装置
KR102052936B1 (ko) * 2012-11-13 2019-12-06 삼성전자 주식회사 반도체 소자 제조 방법
JP6366454B2 (ja) * 2014-10-07 2018-08-01 東京エレクトロン株式会社 被処理体を処理する方法

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US20110237082A1 (en) * 2007-06-08 2011-09-29 Tokyo Electron Limited Micro pattern forming method
CN101903991A (zh) * 2007-12-18 2010-12-01 美光科技公司 用于隔离间距倍增材料环的部分的方法及相关结构
US20100124618A1 (en) * 2008-11-14 2010-05-20 Asm Japan K.K. Method of Forming Insulation Film Using Plasma Treatment Cycles
CN102822943A (zh) * 2010-04-02 2012-12-12 东京毅力科创株式会社 掩模图案的形成方法以及半导体装置的制造方法
CN104011837A (zh) * 2011-10-27 2014-08-27 应用材料公司 用于蚀刻低k及其它介电质膜的制程腔室
WO2013125523A1 (ja) * 2012-02-20 2013-08-29 東京エレクトロン株式会社 電源システム、プラズマエッチング装置及びプラズマエッチング方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109155252A (zh) * 2016-05-25 2019-01-04 东京毅力科创株式会社 处理被处理体的方法
CN109155252B (zh) * 2016-05-25 2023-01-10 东京毅力科创株式会社 处理被处理体的方法
CN110581050A (zh) * 2018-06-07 2019-12-17 东京毅力科创株式会社 处理方法和等离子体处理装置
CN110581050B (zh) * 2018-06-07 2024-06-11 东京毅力科创株式会社 处理方法和等离子体处理装置

Also Published As

Publication number Publication date
EP3007205B1 (en) 2017-08-16
US9607811B2 (en) 2017-03-28
CN112133630A (zh) 2020-12-25
TW201626434A (zh) 2016-07-16
CN112133630B (zh) 2024-08-13
KR20160041764A (ko) 2016-04-18
US20160099131A1 (en) 2016-04-07
EP3007205A1 (en) 2016-04-13
KR102311575B1 (ko) 2021-10-08
JP6382055B2 (ja) 2018-08-29
SG10201508134VA (en) 2016-05-30
JP2016076621A (ja) 2016-05-12
TWI661464B (zh) 2019-06-01

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Application publication date: 20160413

RJ01 Rejection of invention patent application after publication