CN105374717A - 用于快速热处理腔室的透明反射板 - Google Patents

用于快速热处理腔室的透明反射板 Download PDF

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CN105374717A
CN105374717A CN201510817798.3A CN201510817798A CN105374717A CN 105374717 A CN105374717 A CN 105374717A CN 201510817798 A CN201510817798 A CN 201510817798A CN 105374717 A CN105374717 A CN 105374717A
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布莱克·R·凯尔梅尔
阿伦·M·亨特
亚历山大·N·勒纳
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/18—Arrangement of controlling, monitoring, alarm or like devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F27D11/02—Ohmic resistance heating
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    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment

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Abstract

本发明一般涉及用于处理基板的方法和设备。本发明的实施例包括用于处理包括陶瓷反射板的设备，该陶瓷反射板可为光学地透明。反射板可包括反射涂层，且反射板为反射板组件的一部分，其中反射板组设至底板。

Description

用于快速热处理腔室的透明反射板
本申请是申请日为2011年8月9日、申请号为201180038683.4、名称为“用于快速热处理腔室的透明反射板”的发明专利申请的分案申请。
背景
发明领域
本发明一般涉及半导体处理的领域。较具体地，本发明涉及使用在半导体热处理腔室(如，快速热处理腔室)中的反射板。
背景
快速热处理(RapidThermalProcessing，RTP)为在半导体制造期间用于退火基板的处理。在此处理期间，使用热辐射以在控制环境中将基板快速地加热至超过室温900度的最大温度。此最大温度依据处理而维持于低于一秒到数分钟。为进一步处理，基板接着冷却至室温。半导体制造处理具有数个RTP应用。这些应用包括热氧化(基板在氧或氧和氢的结合中加热，这些气体会导致基板氧化而形成二氧化硅)；高温浸泡退火(使用不同的气体混和物，如氮、氨或氧)；低温浸泡退火(一般用来退火沉积有金属的晶片)；和峰值退火(主要使用于基板需暴露至高温于非常短时间的处理)。在峰值退火期间，基板快速地加热至足以活化掺杂剂的最大温度，并在掺杂剂实质扩散前加速地冷却以终止活化处理。
使用高强度钨或卤素灯作为热辐射的源。当反射板将由晶片散发的热辐射朝晶片反射回去时，反射板(如显示于图2中且于后文进一步叙述)帮助维持温度均匀。
图1显示现存反射板27的侧截面。如图1中所示，辐射高温计灯管42经由在反射板27中的开口而突出，使得辐射高温计灯管具有晶片的清晰视界，如于图2中的最佳所视。现存反射板由铝所制成。高温计灯管42与铝反射板27表面齐平，在该铝反射板27表面上有反射涂层(图未示)且该铝反射板27表面面对晶片。因灯管和反射涂层暴露至腔室环境，晶片副产物材料可沉积于灯管及/或反射涂层上，这种情形导致于温度测量中的偏差。此偏差可快速且彻底地发生或于长时段小幅增加。此外，施加至铝反射板的反射涂层复杂且难以制成(高成本)，且反射涂层具有150℃的最大操作温度限制，且反射涂层在特定处理条件下有易于剥离的倾向。石英板60置于晶片和反射板27之间，且石英板60置于固定至反射板27的支架64上，而留下间隙62。石英板60帮助缓和于上所提及的某些问题。然而，仍需要减少于上述所讨论、与现存反射板有关的问题。
概述
所以，本发明的一个或多个实施例涉及一种用于处理基板的设备，所述基板具有一前侧和一后侧。所述设备包括：处理区，所述处理区位于腔室内，所述腔室由邻近辐射加热源的窗口而限定于一侧上，所述辐射加热源位于所述处理区的外侧；及反射板，所述反射板相对所述辐射加热源而设置，所述反射板包括由陶瓷材料所制成的主体和位于所述反射板的一侧上的反射涂层，和延伸经过至少所述反射涂层的多个孔。在一个实施例中，所述陶瓷材料包含光学地透明的陶瓷。在一个实施例中，所述光学地透明的材料选自氧化铝、碳化硅、石英和蓝宝石。依据一实施例，所述反射板的所述侧具有最接近所述辐射加热源的第一表面和最远离所述辐射加热源的第二表面，所述第二表面具有所述涂层于所述第二表面上。
在一个或多个实施例中，所述孔间隔开以容纳高温计探针。在一个或多个实施例中，所述孔仅延伸经过所述反射涂层。在一个或多个实施例中，所述反射板安装于底板(baseplate)以提供反射板组件。在一个实施例中，所述反射板和所述底板以低于约5mm而间隔。在其它实施例中，所述反射板和所述底板直接接触且未间隔。在一个或多个实施例中，所述反射板组件包括支架以将所述反射板和所述基板以一分隔关系而分离。
在一个实施例中，所述反射涂层包括多个介电层。在一个实施例中，所述陶瓷材料包含掺杂剂以增加由所述反射板所吸收的热量。在一个或多个实施例中，所述掺杂剂选自稀土材料、氢氧基和上述材料的结合。在一个或多个实施例中，所述底板包括多个开口，所述开口与在所述反射板中的所述孔对齐。
在本发明的第二方面实施例中，关于一种用于快速热处理腔的反射板组件设备，所述反射板组件设备包括：底板，所述底板具有穿过所述底板的多个开口以容纳高温计探针；及反射板，所述反射板包括由陶瓷材料所制成的主体和位于所述反射板的一侧上的反射涂层，和延伸经过至少所述反射涂层的多个孔，所述孔与经过所述底板的所述开口对齐，其中所述反射板组设至所述底板，使得在所述底板中的所述开口和所述反射板中的所述孔对齐。在一个实施例中，所述底板包括多个支架以将所述反射板和所述基板以一分隔关系而维持。在一个实施例中，具有所述涂层的所述侧面对所述基板。在一个或多个实施例中，所述陶瓷材料为光学地透明。在一个或多个实施例中，所述陶瓷材料选自氧化铝、碳化硅、石英和蓝宝石。在一个或多个实施例中，所述陶瓷材料包含掺杂剂以增加由所述反射板所吸收的热量，其中所述掺杂剂选自稀土材料、氢氧基和上述材料的结合。
附图简要说明
本发明的更特别的说明(上文简要概述的)可参照本发明的实施例(这些实施例描绘于所附的附图)而获得。应注意，所附的附图仅说明本发明的典型实施例，且不因此被视为对本发明范围的限制，因本发明可允许其它同等有效的实施例。
图1为传统快速热处理腔室反射板组件的侧截面图；
图2显示快速热处理腔室；
图3为依据本发明一实施例的反射板的立体图；
图4为依据本发明一实施例的反射板组件的侧截面图；
图5为依据本发明一实施例的反射板组件的侧截面图；
图6为依据本发明一实施例的反射板组件的侧截面图。
为促进了解，尽可能使用相同的标号来表示附图中所共有的相同元件。
具体描述
在说明本发明的几个示范实施例之前，应理解本发明并未限于下文说明中的结构或处理步骤的细节。本发明可包括其它实施例，且可以各种方式执行或实现。
图2概要地呈现依据本发明的实施例的快速热处理腔室10，该快速热处理腔室10包括反射板设备。Peuse等人在美国专利第5,848,842和6,179,466号中说明此种反应器及此反应器的仪器的进一步细节。举例来说，待热处理的基板或晶片12、半导体晶片(如，硅晶片)通过阀或存取端口(accessport)13进入腔室10的处理区18。晶片12由在此实施例中以环形边缘环14显示的基板支撑件而支撑于晶片周缘上，该环形边缘环14可具有接触晶片12的角落的环状坡架15。Ballance等人在美国专利第6,395,363号中更完整地说明边缘环和边缘环的支撑功能。晶片被定向使得已形成于晶片12的前表面中的所处理的特征结构16向上(对照向下的重力场)面朝处理区18，该处理区18由透明石英窗口20限定在处理区18的上侧。透明石英窗口20位于距晶片12实质距离处，使得窗口在处理期间对基板的冷却具有最小的影响。典型地，在晶片12和窗口20之间的距离为大约20mm。相对示意图而言，大部分的特征结构16并未突出超过晶片12的表面的实质距离，但在表面平面内或附近处构成图案。当晶片在将晶片带入腔室内的桨状物(paddle)或机器人叶片(robotblade)(未图示)并放置于边缘环14间处理时，举升销22可上升或下降以支撑晶片12的后侧。辐射加热设备24置于窗口20之上以引导辐射能朝向晶片12并因此加热晶片。在反应器或处理腔室10中，辐射加热设备包括位于各反射管27中的大量高强度钨-卤素灯26(示范数量为409个)，所述反射管27以六方密堆积(ahexagonalclose-packed)的方式而配置于窗口20上。
期望将遍布晶片12的温度控制成均匀遍布晶片12的接近限定温度。依此考虑，反射板28以平行且大于晶片12的区域的方式而延伸，该反射板28并面向晶片12的后侧。反射板28有效地将从晶片12散发的热辐射朝晶片12反射回去。在晶片12与反射板28之间的间隔可在3至9mm的范围内，且空腔的宽度对厚度的宽厚比(aspectratio)有利地大于20。如上所述的反射板28由铝所制成，且包含金涂层或多层介电干涉镜，在晶片12的后侧有效地形成黑体空腔，该黑体空腔易于从晶片12的较温暖部分提供热量至较冷部分。在其它实施例中，举例来说，如披露于美国专利号第6,839,507和7,041,931号中，反射板28可具有较不规则的表面或具有黑色或其它颜色的表面。反射板28可支撑于由金属制成的水冷却基底53上以由水散热多余的辐射(尤其在冷却期间时)。因此，处理腔室的处理区18具有至少两个实质平行壁，其中第一壁为由透明以供辐射的材料(如，石英)所制成的窗口20，第二壁/基底53实质平行第一壁，该第二壁/基底53由金属所制成且明显为不透明的。
灯26被分割成数区，所述区一般绕中央轴34配置成类环状。控制电路在不同区中改变传送至灯26的电压，以由此调整辐射能的辐射分布。区域加热的动态控制由经一个或多个光学灯管42耦接的一个或多个高温计40而影响，所述一个或多个光学灯管42被放置以经由在反射体28中的孔而面对晶片12的后侧，以测量遍布旋转晶片12的半径的温度。灯管42可由各种结构所形成，所述结构包括蓝宝石、金属及石英光纤。计算机化控制器44接收高温计40的输出并相应控制供应至不同环的灯26的电压，以由此在处理期间动态控制辐射加热强度和图案。高温计一般在约700至1000nm的范围中测量在窄波长带宽(如，40nm)中的光强度。控制器44或其它仪器经由众所周知的光强度的光谱分布的普朗克分布(Plankdistribution)而将光强度转换成温度，该光强度由维持于该温度的黑体辐射出。
显示于图2的腔室允许晶片12支撑件被轻易地举升于腔室内侧的不同的垂直位置以允许控制基板的热暴露(thermalexposure)。应理解显示于图2的结构并不意欲作为限制。特别地，本发明不限于热源或灯在一侧或基板的表面处指向且高温计在晶片的相对侧处指向的结构。
如上所述，在处理腔室的处理区中的晶片温度一般通过辐射高温测量(radiationpyrometry)而测量。尽管辐射高温测量可相当精确，如果此辐射由高温计而检测，则在辐射高温计带宽内和从热源产生的辐射可受到高温计信号的判读而干扰。在应用材料公司的RTP系统中，此情形由处理套件和由晶片本身而最小化。处理套组将晶片与旋转系统耦接。处理套件可包括如在图2中以标号30所示的支撑汽缸(supportcylinder)。处理套件也可包括未显示于图中但可使用于一些处理腔室结构中的支撑环。此支撑环基本为支撑边缘环的辅助边缘环，如于图2中以标号14所示的边缘环。
灯26的阵列有时称为灯头。然而，其它辐射加热设备可作为替换。一般而言，这些设备包括电阻加热，以快速的提高辐射源的温度。合适灯的例子包括具有环绕灯丝的玻璃或石英外壳的水银蒸气灯，和环绕气体(如，氙)(当气体被充能时，提供热源)的玻璃或石英外壳的闪光灯(flashlamp)。当于本文使用时，术语“灯”意欲覆盖包括环绕热源的外壳的灯。灯的“热源”与可增加基板温度的材料或元件有关(如，灯丝或可被充能的气体)。
当于本文使用时，快速热处理即RTP指可以约50℃/秒和更高的速率(如，以100至150℃/秒和200至400℃/秒的速率)均匀地加热晶片的设备或处理。在RTP腔室中典型的下降(冷却)速率为在80至150℃/秒的范围。执行于RTP腔室中的某些处理需要遍布基板作低于几度摄氏温度的温度变化。因此，RTP腔室必须包括灯或其它合适的加热系统和可以高达100至150℃/秒，和200至400℃/秒的速率加热的加热系统控制，这是造成快速热处理腔室与其它不具有加热系统和可以这些速率快速加热的加热控制系统的热腔室不同处。依据本发明的另一方面，本发明的实施例也可应用于快速退火(flashannealing)。当在本文使用时，快速退火指将一试样在低于5秒中退火，具体地，低于1秒且在某些实施例中为低于几毫秒。
改善温度均匀度的一种方式包括将边缘环14支撑于旋转汽缸30上，该旋转汽缸30磁性地耦接至位于腔室外侧的旋转凸缘32。转子(未图示)转动凸缘32并因此绕转子的中心34转动晶片，中心34也为一般对称腔室的中心线。
改善均匀度的另一种方式将灯26分割成数区，所述区一般绕中央轴34配置成类环状。控制电路在不同区中改变传送至灯26的电压，以由此调整辐射能的辐射分布。区域加热的动态控制由经一个或多个光学灯管42耦接的一个或多个高温计40而影响，所述一个或多个光学灯管42被放置以经由在反射体28中的孔而面对晶片12的后侧，以测量遍布旋转晶片12的半径的温度。灯管42可由各种结构所形成，所述结构包括蓝宝石、金属及石英光纤。计算机化控制器44接收高温计40的输出并相应控制供应至不同环的灯26的电压，以由此在处理期间动态控制辐射加热强度和图案。高温计一般在约700至1000nm的范围中测量在窄波长带宽(如，40nm)中的光强度。控制器44或其它仪器经由众所周知的光强度的光谱分布的普朗克分布而将光强度转换成温度，该光强度由维持于该温度的黑体辐射出。
显示于图2的腔室允许晶片12支撑件被轻易地举升于腔室内侧的不同的垂直位置以允许控制基板的热暴露。应理解显示于图1的结构并不意欲作为限制。特别地，本发明不限于热源或灯在一侧或基板的表面处指向且高温计在晶片的相对侧处指向的结构。
如上所述，在处理腔室的处理区中的晶片温度一般通过辐射高温测量而测量。尽管辐射高温测量可相当精确，如果此辐射由高温计而检测，则在辐射高温计带宽内和从热源产生的辐射可受到高温计信号的判读而干扰。在应用材料公司的RTP系统中，此情形由处理套件和由晶片本身而最小化。处理套组将晶片与旋转系统耦接。处理套件可包括如在图1中以标号30所示的支撑汽缸。处理套件也可包括未显示于图中但可使用于一些处理腔室结构中的支撑环。此支撑环基本为支撑边缘环的辅助边缘环，如于图2中以标号14所示的边缘环。
依据本发明的第一方面，提供有改良的反射板28和反射板组件。图3显示使用于设备(该设备显示于图2中)的反射板28种类的立体图，该反射板28包括开口以允许举升销22经过该反射板28的顶侧29而突出。
在一个或多个实施例中，反射板28主体由光学地透明的材料(如，石英、蓝宝石或透明钇铝石榴石)所制成。反射板还包括用于如图1中所示容纳高温计灯管42的多个灯管孔。
反射板组件25显示于依据本发明的一实施例的图4中。应注意，用来容纳显示于图3中的举升销的开口未显示于图4中。反射板组件包括底板(baseplate)19，基板19在一个实施例中由合适的金属(如，不锈钢)所制成。底板19可固定至腔室底部，举例来说，由螺栓、螺丝或其它合适的紧固件而固定至如图2中所示的腔室基底53。底板19具有开口，高温计灯管42可通过开口。在底板中的开口与反射板中的孔对齐以容纳高温计灯管。反射板组件25进一步包括反射板28，反射板的主体由陶瓷所制成，陶瓷包含(但不限于)氧化铝、碳化硅、石英、蓝宝石。此陶瓷依据所选择的实施例而可为或不可为光学地透明的。随着穿孔允许高温计灯管通过陶瓷，涂层可沉积于第一表面上，且陶瓷不需为光学地透明的。依据一个实施例，如果涂层沉积于第二表面上时，则陶瓷应为光学地透明的。第一表面反射体将导致较冷的反射板，而这种情形可能为所期望的或非所期望的。第二表面反射体将导致较温暖的反射板，且涂层也通过变成埋入或沉积于涂层顶部的副产物而从任何处理较佳地屏蔽。
反射板28具有与底板19直径相似的直径。反射板28安装于底板19上方。安装反射板28的一种合适方法是放置反射板28于支架33上，使得反射板28和底板19分隔而提供少于约5mm的间隙45。在一个或多个实施例中，反射板28和底板19通过少于约1mm而分隔，且在其它实施例中，并无间隔在反射板28和底板19之间。在所示的结构中，支架33由底板而定位且容纳，但放置和支撑反射板28。反射板28可进一步包括施加于反射体28的任一侧或两侧的反射涂层35。所以，反射板组件25包括反射板28，该反射板28置于支架33上，该支架33由底板19所约束，高温计灯管42通过该支架33，该高温计灯管42被螺固至腔室底部53。在某些实施例中，举升销46通过支架33。通过以光学地透明的陶瓷(如，石英或蓝宝石)而制造反射板28的主体，反射涂层可置于反射板的后侧37上(远离晶片12)。在此方向中，涂布的后侧37未直接地暴露至晶片处理副产物，且因此涂层较不易受到剥离。此外，显示延伸入涂层但可与涂层35齐平的高温计探针或灯管42也未直接暴露至副产物。因此，光学地透明的反射板将吸收多的辐射能且将变得更热。
在所示的实施例中，在反射板28的后侧37上有未施加涂层的区域，使得高温计通过光学地透明的反射板28仍具有至晶片的清晰视野。这些未涂布的区域可与涂布表面齐平或和涂布表面相距1mm内。在所示的实施中，这些未涂布的区域形成盲孔(blindhole)或盲口(blindopening)。在替代实施例中，高温计开口可为孔41或穿孔148(如图5中所示)的形式。在图6所示的一个或多个实施例中，提供盲孔248，使得高温计灯管42可被设计为大致上与反射涂层齐平，但因于组件中层叠的公差而允许垂直变化。此外，盲孔提供一种便利的方式以准确地定位掩模，此方式可使用于涂布处理期间以确保这些区域保持未涂布。在一个或多个实施例中，在涂层中的空隙可在涂层沉积前通过掩模或涂层去除处理(如，激光烧蚀)而产生，这些处理选择地仅去除一些区域中的涂层，这些区域是高温计需要进入处理环境的视线的区域。在一个或多个实施例中，涂层可施加至第一表面的顶侧29，开口或孔可部分地或完全地延伸经过于顶侧29上的涂层。
在所示具有涂层35在反射板28的后侧35上的反射板组件25的结构中，晶片副产物沉积在反射板28上的速率降低，因此延伸出可称之为清洁间的平均晶片(MeanWaferBetweenClean，MWBC)。MWBC指必须在反射板28上执行清洁以减少或去除副产物沉积在反射板28上前所处理晶片的平均数。因为光必须通过光学地透明反射板主体而至反射涂层且接着沿光线发射出去的路径经由光学地透明反射板主体而反射回去，具有面对底板表面(即，后侧37或第二表面)的反射涂层的光学地透明的反射板28继续变热。在操作期间保持的热量可通过在反射涂层35中具有掺杂剂(如稀土元素)或具有较高的氢氧基浓度来调整。如果光学地透明的反射板28具有较高的氢氧基含量，则反射板28将吸收更多的辐射能。
在一替代实施例中，反射板28的主体由不透明陶瓷所制成。在此实施例中，如果反射涂层35置于反射板28的顶侧29上，光将从涂层反射。此可通过避免在早先的加热处理中不平均加热晶片，而有助于允许反射板28保持较冷。陶瓷(如，石英或蓝宝石)在大温度范围(如在约22℃至约800℃的范围中)具有低的热膨胀系数。因此，相较于铝反射板，反射涂层可较轻易地施加。相较于铝或不锈钢，涂层倾向较易于粘着至陶瓷材料(如，石英)。依据一个或多个实施例，反射涂层具有约400℃的最大操作温度(相较于在铝反射板上的反射涂层而言，为约200℃)。再次地，因为较高的操作温度能力，晶片副产物沉积可减少或接近消除。
反射涂层35可为任何种类的材料。提供具有反射层的薄层的窗口用于在特定范围的波长中反射的处理和服务的提供者为已知。此涂布服务的一个提供者如JDSUniphase。一般而言，可使用在反射涂层35中的材料可为高指数或低指数的介电材料的任何结合的替代层，这些介电材料对大部分从热源散发的辐射为实质透明，如，二氧化钛-二氧化硅或五氧化二钽-二氧化硅。在一个实施例中，反射层由SiO2和Ta2O5层所制成。在另一个实施例中，反射层由SiO2和TiO2所制成。在一特定实施例中，最外层包含SiO2。
在一个实施例中，层可包括具有多(薄)层不同折射指数的光学地透明材料，折射指数有时称为介质镜(dielectricmirror)。多层介质镜可如反射过滤器而运作，其中辐射被反射。辐射可在其它元件上依据于辐射波长、辐射的入射角、所施加介电材料的特性(包括所施加介电材料的折射指数)、每层的厚度、具有不同厚度的层数及层的配置而选择地反射。
此说明书从头到尾所指的“一个实施例”、“一个或多个实施例”或“一实施例”意指结合该实施例所述的特定特征、结构、材料或特性被包括在本发明的至少一个实施例中。因此，此说明书从头到尾出现在各个位置的短语如“在一个或多个实施例中”、“在一些实施例中”、“在一个实施例中”或“在一实施例中”不必然指本发明的相同实施例。此外，特定的特征、结构、材料或特性可在一个或多个实施例中以合适的方式作结合。
尽管本发明于此已参照特定实施例作说明，应理解，这些实施例仅作为解释本发明的原理和应用。对本领域技术人员而言，可对本发明的方法及设备所作的各种修改及变化显而易见，且不背离本发明的精神和范围。举例来说，尽管本发明已关于特定种类的加热灯，其它的变化例也为可行。因此，本发明意欲包括于所附权利要求书和权利要求书的等效物的范围内修改和变化。

Claims (20)

1.一种用于处理基板的设备，所述基板具有前侧和后侧，所述设备包括：
处理区，所述处理区位于腔室内，所述腔室由邻近辐射加热源的窗口而限定于一侧上，所述辐射加热源位于所述处理区的外侧；及
反射板，所述反射板相对所述辐射加热源而设置，所述反射板包括由陶瓷材料所制成的主体和位于所述反射板的一侧上的反射涂层，和延伸经过至少所述反射涂层的多个孔。
2.如权利要求1所述的设备，其中所述陶瓷材料包含光学地透明的陶瓷。
3.如权利要求2所述的设备，其中所述光学地透明的陶瓷选自氧化铝、碳化硅、石英和蓝宝石。
4.如权利要求3所述的设备，其中所述反射板的所述侧具有最接近所述辐射加热源的第一表面和最远离所述辐射加热源的第二表面，所述第二表面具有所述涂层于所述第二表面上。
5.如权利要求4所述的设备，其中所述孔间隔开以容纳高温计探针。
6.如权利要求5所述的设备，其中所述孔仅延伸经过所述反射涂层。
7.如权利要求5所述的设备，其中所述反射板安装于底板以提供反射板组件。
8.如权利要求7所述的设备，其中所述反射板和所述底板以低于约5mm而间隔。
9.如权利要求7所述的设备，其中所述反射板和所述底板直接接触且未间隔。
10.如权利要求8所述的设备，其中所述反射板组件包括支架以将所述反射板和所述底板以一分隔关系而分离。
11.如权利要求1所述的设备，其中所述反射涂层包括多个介电层。
12.如权利要求1所述的设备，其中所述陶瓷材料包含掺杂剂以增加由所述反射板所吸收的热量。
13.如权利要求11所述的设备，其中所述掺杂剂选自稀土材料、氢氧基和上述材料的结合。
14.如权利要求9所述的设备，其中所述底板包括多个开口，所述开口与在所述反射板中的所述孔对齐。
15.一种用于快速热处理腔室的反射板组件设备，所述反射板组件设备包括：
底板，所述底板具有穿过所述底板的多个开口以容纳高温计探针；及
反射板，所述反射板包括由陶瓷材料所制成的主体和位于所述反射板的一侧上的反射涂层，和延伸经过至少所述反射涂层的多个孔，所述孔与经过所述底板的所述开口对齐，其中所述反射板组设至所述底板，使得在所述底板中的所述开口和所述反射板中的所述孔对齐。
16.如利要求15所述的设备，其中所述底板包括多个支架以将所述反射板和所述底板以一分隔关系而维持。
17.如利要求15所述的设备，其中具有所述涂层的所述侧面对所述底板。
18.如利要求17所述的设备，其中所述陶瓷材料为光学地透明。
19.如利要求18所述的设备，其中所述陶瓷材料选自氧化铝、碳化硅、石英和蓝宝石。
20.如利要求18所述的设备，其中所述陶瓷材料包含掺杂剂以增加由所述反射板所吸收的热量，其中所述掺杂剂选自稀土材料、氢氧基和上述材料的结合。
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