TWI601233B - 用於急速熱處理的最小接觸邊緣環 - Google Patents

用於急速熱處理的最小接觸邊緣環 Download PDF

Info

Publication number
TWI601233B
TWI601233B TW102138503A TW102138503A TWI601233B TW I601233 B TWI601233 B TW I601233B TW 102138503 A TW102138503 A TW 102138503A TW 102138503 A TW102138503 A TW 102138503A TW I601233 B TWI601233 B TW I601233B
Authority
TW
Taiwan
Prior art keywords
substrate
substrate support
ring
support
edge lip
Prior art date
Application number
TW102138503A
Other languages
English (en)
Other versions
TW201421612A (zh
Inventor
潘恒
塔拉法爾祖拉塞拉朱
鮑提斯塔凱文Ｊ
托比恩傑弗瑞
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201421612A publication Critical patent/TW201421612A/zh
Application granted granted Critical
Publication of TWI601233B publication Critical patent/TWI601233B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

用於急速熱處理的最小接觸邊緣環
本揭示案之實施例大體而言係關於一種在製程腔室中支撐基板之支撐環。
在諸如半導體基板之基板處理中，將基板放置於製程腔室中的支撐件上且在製程腔室中維持適宜的處理條件。舉例而言，可在受控加熱循環中加熱基板以熱處理該基板。可(例如)藉由安置於腔室中之基板上方及/或下方的加熱燈陣列來加熱基板。可使用熱處理(例如)以使得已在基板上離子植入的層退火，執行熱氧化或氮化製程，或在基板上執行熱化學氣相沉積製程。
已觀察到，跨越基板之溫度梯度變化可導致基板之不均勻處理。由於自基板接觸支撐件(或其他腔室組件)之區域及不接觸支撐件之基板區域的不均勻對流或傳導熱損失，在不同的基板區域發生不均勻的溫度。可使用基板支撐環減小基板中的溫度梯度，該基板支撐環自腔室壁向內延伸且圍繞基板之周邊。具體而言，藉由具有接觸基板邊緣之環 形唇的支撐環之邊緣在基板之周邊上支撐待熱處理之該基板。支撐環有效地擴大或推出基板中自基板周邊至支撐環之外緣的溫度梯度。基板與支撐環之重疊亦避免或最小化高溫輻射能從支撐環內側或外側上之支撐環邊緣周圍的輻射熱源(通常安置於基板上方)漏泄。
具有環形邊緣的支撐環可能無法急速加熱速率製程中提供跨越基板的足夠溫度均勻性，該等急速加熱速率製程例如在急速熱處理(rapid thermal processing；RTP)系統中具有至少約200℃/秒之加熱速率的製程。在該等製程中，支撐環與基板之間的加熱速率差異導致沿基板之周邊的溫度梯度在加熱製程步驟期間變得異常高。基板亦可經歷由固體間熱接觸中的方位變化引起的溫度變化，主要取決於基板與支撐環之間的可變表面光潔度及平面度/平坦度。在某些情況中，因為基板與支撐環之環形唇在基板之邊緣附近重疊，所以僅僅藉由量測及調整基板之溫度難以實現邊緣附近的均勻溫度分佈。特別是在減小的壓力(例如，3托)下加熱基板時，尤其難以實現跨越基板的溫度均勻性。此原因在於基板與支撐環之間重疊區域處的接觸阻力在較低壓力下更大(因為穿過緊密接觸點之流動為主導性)，引起基板之邊緣處的溫度分佈比中央區域處的彼溫度分佈明顯更高。
因此，需要具有改良的支撐環以避免或最小化基板與支撐環之間的熱耦合，使得支撐環不會在熱處理期間導致基板內的溫度梯度過大。
本揭示案之實施例大體而言係關於一種在製程腔室中的熱處理期間支撐基板之支撐環。藉由支撐環之邊緣唇將待熱處理之基板支撐於基板周邊上。支撐環可沿製程腔室之內部圓周表面向內徑向延伸及圍繞基板之周邊。支撐環具有邊緣唇，該邊緣唇自支撐環之表面向內徑向延伸。在一個實施例中，邊緣唇具有沿邊緣唇安置(亦即，在邊緣唇之圓周周圍延長)的連續環狀基板支撐件。邊緣唇自邊緣唇之頂表面延伸。基板支撐件自具有最小化接觸表面的背側繞基板之整個周邊支撐基板以將基板與邊緣唇熱切斷。基板支撐件提供與基板之背表面的實質線接觸。在一個實例中，基板支撐件具有半球形頂表面以減小可用於支撐環之邊緣唇與基板之間熱傳導的接觸面積，導致跨越基板具有最小邊緣溫度梯度之改良的溫度分佈改良。
在一個實施例中，提供一種基板支撐環。基板支撐環包含：環主體；邊緣唇，自環主體之表面向內徑向延伸；及基板支撐件，自邊緣唇之頂表面向上延伸，其中基板支撐件為連續環形主體。
在另一實施例中，支撐環包含：內環；外環，經由平面部分連接至內環之外部周邊；及邊緣唇，自內環之內部周邊向內徑向延伸以形成支撐凸部。支撐環包含自邊緣唇之頂表面向上延伸的基板支撐件，且基板支撐件為安置於邊緣唇之邊緣附近內部的連續環形主體。基板支撐件自背側以最小化接觸表面繞基板之整個周邊支撐基板以將基板與邊緣唇熱切斷。具體而言基板支撐件提供與基板之背表面的實質線 接觸。
在又一實施例中，提供一種在熱處理腔室中處理基板之方法。該方法包括以下步驟：提供基板支撐環，該基板支撐環具有環主體及自環主體之表面向內徑向延伸的邊緣唇；及藉由圍繞邊緣唇之圓周安置的基板支撐件在基板之周邊邊緣附近支撐基板之背表面，其中配置該基板支撐件以藉由與基板之背表面的線接觸來最小化基板與支撐環之間的熱耦合。
10‧‧‧急速熱處理腔室
12‧‧‧基板
13‧‧‧出入口
14‧‧‧環形支撐環
15‧‧‧邊緣唇
16‧‧‧處理特徵
18‧‧‧製程區域
20‧‧‧透明石英窗口
22‧‧‧起模頂桿
24‧‧‧輻射加熱設備
26‧‧‧燈
27‧‧‧反射管道
28‧‧‧反射體
30‧‧‧可旋轉圓筒
32‧‧‧可旋轉凸緣
34‧‧‧中心
40‧‧‧高溫計
42‧‧‧光學光導管
44‧‧‧電腦化控制器
53‧‧‧第二壁
60‧‧‧內部圓周表面
200‧‧‧支撐環
202‧‧‧外環
203‧‧‧內部周邊
204‧‧‧內環
205‧‧‧外部周邊
206‧‧‧平面部分
206A‧‧‧頂表面
207‧‧‧內部周邊
208‧‧‧邊緣唇
208A‧‧‧頂表面
210‧‧‧基板支撐件
212‧‧‧基板
212A‧‧‧上表面
212B‧‧‧背表面
214‧‧‧凹部
230‧‧‧圓筒
260‧‧‧離散部分
290‧‧‧中央開口
因此，為了可詳細理解本揭示案之上文所敍述的特徵，可參考實施例更具體描述上文簡要概述之本揭示案，一些實施例圖示於隨附圖式中。然而，應注意，隨附圖式僅圖示出本揭示案之典型實施例，且因此該等圖式不欲視為本揭示案範疇之限制，因為本揭示案可允許其他同等有效之實施例。
第1圖示意地圖示具有基板支撐環的示例性急速熱處理腔室。
第2A圖示意地圖示根據一個實施例可用於代替第1圖之基板支撐環的具有連續環狀基板支撐件的支撐環之橫截面側視圖。
第2B圖示意地圖示第2A圖之邊緣唇之局部俯視圖。
第2C圖示意地圖示根據另一實施例邊緣唇之局部俯視圖。
示例性急速熱處理腔室
第1圖示意地表示急速熱處理腔室10。穿過閥門或出入口13將待熱處理之基板12(例如，諸如矽基板之半導體基板)傳遞至處理腔室10之製程區域18中。藉由環形支撐環14在基板周邊上支撐基板12。邊緣唇15自環形支撐環14向內延伸及接觸基板12之周邊邊緣。可定向基板以使得在基板12之前表面中已形成的處理特徵16朝上面向在上側由透明石英窗口20所界定之製程區域18。亦即，基板12之前表面面向燈26之陣列。在一些實施例中，具有已形成於基板12之前表面上的處理特徵的基板12之前表面可避開燈26之陣列(亦即，面向高溫計40)。與示意圖相反，特徵16的大部分不突出超過基板12之前表面的實質距離，但是在前表面之平面內部及平面附近構成圖案。
可上升及下降複數個起模頂桿22(諸如三個起模頂桿)以當在輪葉或機器人刀片(未圖示)之間傳遞基板時支撐基板12之背側，將基板送入處理腔室中及支撐環14上。將輻射加熱設備24定位於窗口20上方且配置該輻射加熱設備以將輻射能經由窗口20導向基板12。在處理腔室10中，輻射加熱設備可包括大量(示例性數目為409)高強度鹵鎢燈26，該等鹵鎢燈定位於窗口20上方以六邊形密集裝填陣列排列的各別反射管道27中。燈26之陣列有時稱為燈頭。然而，應設想，可替代使用其他輻射加熱設備。大體而言，該等配置涉及電阻加熱以迅速提升輻射源之溫度。適宜燈之實例包 括：汞汽燈，具有圍繞燈絲的玻璃或矽石之包封；及閃光燈，包含圍繞諸如氙之氣體的玻璃或矽石之包封，當激勵該氣體時氣體提供熱源。如本文所使用，術語燈意欲覆蓋包括圍繞熱源之包封的燈。燈之「熱源」指可增加基板之溫度的材料或元件，例如可經激勵的燈絲或氣體或發射輻射的材料之固體區域(諸如LED或固態雷射及雷射二極體)。
如本文所使用，急速熱處理或RTP指能夠以約50℃/秒及以上之速率(例如，約100℃/秒至150℃/秒之速率及約200℃/秒至400℃/秒之速率)均勻加熱基板的設備或製程。RTP腔室中的典型降溫(冷卻)速率處於約80℃/秒至150℃/秒之範圍內。在RTP腔室中執行的一些製程需要跨越基板的溫度變化小於數攝氏溫度。因此，RTP腔室必須包括燈或其他適宜加熱系統及加熱系統控制，該等系統能夠以至高達約100℃/秒至150℃/秒及約200℃/秒至400℃/秒之速率加熱，使得急速熱處理腔室與不具有能夠以該等速率急速加熱之加熱系統及加熱控制系統的其他類型熱腔室區別開來。具有此加熱控制系統的RTP腔室可在5秒以內使得樣本退火，例如在1秒以內及在一些實施例中為數毫秒以內。
重要的是控制跨越基板12的溫度至跨越基板12均勻的嚴密界定溫度。一種改良均勻性之被動手段可包括在基板12下方安置的反射體28。反射體28平行於比基板12更大的區域延伸且在該區域上方延伸。反射體28有效地將自基板12發射的熱輻射反射回基板12以增強基板12之表觀發射率。基板12與反射體28之間的間隔可介於約3mm至9mm 之間，且空腔之寬度與厚度之深寬比有利地大於20。可由鋁製成且具有高反射表面塗層或多層介電干涉鏡的反射體28之頂部與基板12之背側形成用於增強基板之有效發射率的反射空腔，從而改良溫度量測之準確度。在某些實施例中，反射體28可具有更加不規則的表面或具有黑色或其他顏色表面以更近似黑體壁。可在第二壁53(係由金屬製成的水冷基座53)上沉積反射體28以尤其在冷卻期間將基板的過量輻射散去。因此，處理腔室10之製程區域具有至少兩個實質平行壁，其中第一壁為窗口20，由對輻射透明的材料(諸如石英)製成，及第二壁53實質上平行於第一壁且由明顯不透明的金屬製成。
一種改良均勻性之方式包括在可旋轉圓筒30上支撐支撐環14，該圓筒經磁性耦接至位於處理腔室10外部的可旋轉凸緣32。馬達(未圖示)旋轉凸緣32且因此繞中心34旋轉基板，該中心亦為大體對稱腔室之中心線。或者，可旋轉圓筒30之底部可為磁浮圓筒，由安置於可旋轉凸緣32中的磁體將該圓筒固持就位且由可旋轉凸緣32中的旋轉磁場自可旋轉凸緣32中的線圈旋轉該圓筒。
另一改良均勻性之方式係將燈26分成繞中心軸34大體環狀排列的區域。控制電路系統改變傳遞至不同區域中的燈26之電壓，從而定製輻射能之徑向分佈。分區加熱之動態控制受一個或複數個高溫計40影響，該等高溫計經由經定位以穿過反射體28中的孔面向基板12之背側的一或更多個光學光導管42耦接，以量測跨越旋轉基板12之半徑的溫度。 光導管42可由包括藍寶石、金屬及矽石纖維的各種結構形成。電腦化控制器44接收高溫計40之輸出且因此控制提供給燈26之不同環的電壓，從而在處理期間動態控制輻射加熱強度及圖案。高溫計大體上量測介於約700nm至1000nm之範圍內的(例如)40nm之窄波長頻寬內的光強度。控制器44或其他儀器經由自保持於彼溫度下之黑體輻射的光強度之光譜分佈之熟知的普朗克分佈(Planck distribution)將光強度轉換至溫度。然而，測高溫術受到基板12正被掃描之部分之發射率影響。發射率ε可在對於黑體1與對於完美反射體0之間變化，且因此與基板背側之反射率R=1-ε成反比。儘管基板之背表面通常係均勻的以便預期發射率均勻，但是背側組合物可取決於先前處理而變化。可藉由進一步包括發射率儀及控制器44內部之控制算法以包括量測之發射率來改良測高溫術，該發射率儀光學地探測基板以在相關波長範圍內量測面向基板之部分之發射率或反射率。
示例性支撐環
第2A圖係根據一個實施例可用於代替第1圖之支撐環14的支撐環200之示意性橫截面側視圖。可在處理腔室(例如，第1圖所示之急速熱處理腔室10)內部安置第2A圖圖示之支撐環200且該支撐環沿處理腔室10之內部圓周表面60向內徑向延伸。支撐環可為連續環主體(或在一些實施例中可為離散環狀主體)，該環主體實質上圍繞基板之周邊。如下文中將更詳細論述的，支撐環圍繞具有環形基板支撐件的邊緣唇以與基板之背表面線接觸。在一些實施例中，邊緣 唇可具有沿支撐環之圓周變化的徑向寬度以便在加熱製程期間控制邊緣唇之彎曲。應注意，僅出於說明性目的將基板212圖示為具有方形邊緣，因為基板212可具有圓形邊緣。
在第2A圖中所示之一個實施例中，支撐環200大體上包括具有中央開口290(第2B圖)的環形主體。支撐環200具有外環202及內環204。外環202經由平面部分206連接至內環204，該平面部分自外環202之內部周邊203向內徑向延伸至內環204之外部周邊205。可藉由諸如第1圖中所示之可旋轉圓筒30之圓筒230支撐外環202。對於頂部加熱類型配置，可旋轉圓筒230可僅自外環202向內接觸支撐環200。亦即，外環202之底表面與平面部分206之頂表面206a相對以防止漏光及提供所需機械穩定性。支撐環200進一步包括邊緣唇208，該邊緣唇自內環204之內部周邊207向內徑向延伸以形成支撐凸部，來在基板212之周邊邊緣附近支撐基板212之背表面212b。
邊緣唇208之寬度可根據基板212之直徑變化。邊緣唇208可具有介於約15mm至約40mm之間之寬度。邊緣唇208可在基板212下方延伸足夠距離，為標稱12吋(300mm)之基板產生介於約0.5mm與約5.0mm之間範圍內的徑向重疊區域「D1」。在一些情況中，可將徑向重疊區域「D1」延伸至約15mm至約30mm，例如對於300mm基板延伸至約20mm至約25mm。應注意，本揭示案中所使用之術語「重疊」按第2A圖中D1所示量測。邊緣唇208可為具有一致徑向寬度之連續環形。或者，邊緣唇208可具有沿支撐環之圓 周變化的徑向寬度以減少用於製造邊緣唇之材料數量及以最小化或消除加熱製程期間邊緣唇208之彎曲。
邊緣唇208之頂表面208a可相對位於平面部分206之頂表面206a下方以形成能夠於內環204之內部周邊207內固持基板212之凹部214。具體而言，藉由邊緣唇208經由在邊緣唇208之頂表面208a上所形成之基板支撐件210來支撐基板。內環204之上表面可處於與基板212之上表面212a之彼高度大致相同的高度。在一個實施例中，內環204可具有約0mm至約3mm之高度「D2」，例如約1mm。內環204可具有減小的高度用於降低晶圓邊緣溫度，因為該高度減小了基板212與支撐環200之間的熱耦合。可將基板支撐件210定位於在基板212之背表面212b與邊緣唇208之間所產生的重疊區域「D1」內。換言之，在邊緣唇208之邊緣附近內安置基板支撐件210。基板支撐件210自邊緣唇208之頂表面208a向上且垂直於邊緣唇208之縱向軸「A」延伸。基板支撐件210可具有與內環204之高度「D2」相同的高度「H」。在一個實施例中，基板支撐件210具有約0.5mm至約3mm之高度「H」，例如約0.7mm。
基板支撐件210可為繞邊緣唇208之圓周安置的連續環主體。在第2B圖中圖示環主體之一實例，該圖示意地圖示第2A圖之邊緣唇之局部俯視圖。配置基板支撐件210以使得基板支撐件210的一部分圍繞基板(第2B圖中未圖示)之周邊且部分地抵住基板之周邊。不管加熱燈之配置如何，具有連續環主體的基板支撐件210可為有利的，因為連續環主 體藉由阻擋製程腔室中源輻射之光到達與源輻射相面對安置的高溫計而避免可能的漏光問題。另外，咸信連續環主體為基板212提供了更好且穩固的支撐，因為在加熱製程期間由基板支撐件210旋轉支撐基板212。應設想，基板支撐件可由繞邊緣唇208之圓周分佈在邊緣唇208之頂表面208a上之離散或分離部分260形成，產生如第2C圖所示的環狀基板支撐件。在此情況中，離散部分260之數目之範圍可自3個至10個，例如第2C圖所示的離散部分260為7個。亦應設想，離散部分260之數目可取決於離散部分260之尺寸以及邊緣唇208之表面積而變化。
在使用離散部分260的情況中，應為徑向重疊區域定尺寸以實質上阻擋自燈頭至位於基板下方的高溫計之任何可能的漏光。舉例而言，可將徑向重疊區域延伸至約15mm至約30mm，例如對於300mm基板延伸至約20mm至約25mm。
可使用雷射加工技術或任何適宜技術在邊緣唇208之頂表面208a上形成基板支撐件210。基板支撐件210可為任何適宜形狀，諸如矩形、菱形、正方形、半球形、六邊形、三角形突起部分或不同形狀突起部分之混合。基板支撐件210可為與基板具有減小接觸表面之任何形狀。舉例而言，基板支撐件210可具有半球形頂表面。就有效熱質減小而言，半球形頂表面可為有利的，因為半球形頂表面能夠藉由將表面接觸轉為連續線接觸(第2B圖)或離散線接觸(第2C圖)來進一步減小邊緣唇與基板之間的表面接觸面積。
在本揭示案中，「線接觸」可指具有小於約500μm(例如，約5μm與約200μm之間，諸如50μm)之徑向寬度的線。基板支撐件210以邊緣唇208與基板212之間的最小接觸面積及最小熱傳遞支撐基板。對於標稱12吋(300mm)的基板，邊緣唇208與基板之接觸面積可小於約15cm2或以下，例如約5cm2或以下，諸如約1cm2至約3cm2。應設想，與基板之背表面實體接觸的線之寬度可取決於基板支撐件210之形狀變化。亦應設想，只要以基板支撐件210與基板212之背表面212b之間的最小化接觸面積安全地支撐基板212，基板支撐件210之形狀及/或尺寸便可變化。在一個實例中，基板支撐件210之尺寸可在約0.1mm與約10mm之間的廣泛極限值範圍內變化，諸如在約0.2mm與約2mm之間，例如寬度為約1mm。
將表面接觸轉換成連續線接觸實質上減小了可用於支撐環200之邊緣唇208與基板212之間熱傳導的接觸面積，從而甚至在約3托之減小壓力下消除或最小化熱處理期間基板中過量的溫度梯度。減小基板212與支撐環200之間的表面接觸面積亦將允許更好地管理由基板212與邊緣唇208之重疊引起的熱質不連續性。因此，減小了由基板之邊緣周圍的熱損失導致的熱梯度變形，產生跨越基板具有最小邊緣溫度梯度之改良的溫度分佈。邊緣唇208與基板212之間減小的接觸面積進一步減少了處理腔室中可能的粒子污染。對於如第1圖所示之頂部輻射加熱配置，可定製自輻射熱源的輻射僅用加熱基板而無需過多擔心重疊區域中的熱質不連續 性，因為經由基板支撐件210將基板與邊緣唇208熱切斷。因此，本發明之基板支撐件可轉變為更快的可實現加熱升溫率或減小的峰值功率狀況。
基板支撐件210可由對用於基板之溫度量測的頻率範圍內之輻射透明的材料製成。在一個實例中，基板支撐件210由碳化矽製成。亦涵蓋諸如碳化矽合金、陶瓷、或高溫材料(諸如非晶矽、Al2O2、ZrO2、Si3N4或類似材料)之其他材料。基板支撐件210可視情況塗覆有二氧化矽(SiO2)或任何其他適宜材料以避免高溫下與基板212之背表面212b的Si-Si黏結，該黏結可導致基板潛在黏附至基板支撐件。支撐環200可由類似於基板的材料製成以便最小化基板與支撐環之間的吸收率/反射率失配。在一個實例中，支撐環200由碳化矽製成。在某些實施例中，支撐環200可視情況塗覆有多晶矽(polycrystalline silicon；polysilicon)層以使得該塗層對用於熱處理腔室中基板之溫度量測的頻率範圍內之輻射不透明。在此情況中，取決於支撐環200之厚度或取決於(例如)在支撐環200中所使用的SiC之不透明度，多晶矽層之厚度可在介於約20μm與約50μm之間範圍內變化。
儘管上文所述係針對本揭示案之實施例，但是可在不脫離本揭示案之基本範疇的情況下設計出其他及進一步實施例，且由以下申請專利範圍決定本揭示案之範疇。
200‧‧‧支撐環
202‧‧‧外環
203‧‧‧內部周邊
204‧‧‧內環
205‧‧‧外部周邊
206‧‧‧平面部分
206A‧‧‧頂表面
207‧‧‧內部周邊
208‧‧‧邊緣唇
208A‧‧‧頂表面
210‧‧‧基板支撐件
212‧‧‧基板
212B‧‧‧背表面
214‧‧‧凹部
230‧‧‧圓筒

Claims (18)

  1. 一種基板支撐環，該支撐環包含：一環主體；一邊緣唇，自該環主體之一表面徑向延伸；以及一基板支撐件，自該邊緣唇之一頂表面向上延伸，其中該基板支撐件為沿該邊緣唇的一圓周安置的一連續環形主體，且該基板支撐件包含具有約5μm至約200μm的一徑向寬度之一基板接觸表面。
  2. 如請求項1所述之基板支撐環，其中該基板支撐件具有約0.5mm至約3mm之一高度。
  3. 如請求項1所述之基板支撐環，其中該基板接觸表面具有選自由半球形、菱形及三角形組成的群組中之一形狀。
  4. 如請求項1所述之基板支撐環，其中該基板支撐件塗覆有二氧化矽。
  5. 一種基板支撐環，該支撐環包含：一內環；一外環，經由一平面部分連接至該內環之一外部周邊；一邊緣唇，自該內環之一內部周邊向內徑向延伸以形成一支撐凸部；以及 一基板支撐件，自該支撐凸部之一頂表面向上延伸，其中該基板支撐件為在該支撐凸部的一圓周安置的一連續環形主體，其中該基板支撐件包含碳化矽，且該基板支撐件包含具有約5μm至約200μm的一徑向寬度之一基板接觸表面。
  6. 如請求項5所述之基板支撐環，其中該平面部分自該外環之一內部周邊徑向延伸至該內環之該外部周邊。
  7. 如請求項5所述之基板支撐環，其中該基板接觸表面具有選自由半球形、菱形及三角形組成的群組中之一形狀。
  8. 如請求項7所述之基板支撐環，其中該基板接觸表面具有一半球形。
  9. 如請求項5所述之基板支撐環，其中該基板支撐件具有約0.5mm至約3mm之一高度。
  10. 如請求項6所述之基板支撐環，其中該內環具有約0mm至約3mm之一高度。
  11. 如請求項5所述之基板支撐環，其中該基板支撐件塗覆有二氧化矽。
  12. 一種在一熱處理腔室中處理一基板之方法，該方法包含以下步驟：提供一基板支撐環，該基板支撐環具有一環主體及自該環主體之一表面向內徑向延伸的一邊緣唇；以及藉由繞該邊緣唇之一圓周安置的一基板支撐件在一基板之一周邊邊緣附近支撐該基板之一背表面，其中該基板支撐件藉由與該基板之該背表面的一線接觸來支撐該基板。
  13. 如請求項12所述之方法，其中該邊緣唇在該基板之該背表面下方延伸約0.5mm至約5.0mm的一距離。
  14. 如請求項12所述之方法，其中該基板支撐件為自該邊緣唇之一頂表面向上延伸的一連續環形主體。
  15. 如請求項12所述之方法，其中該基板支撐件具有約0.5mm至約3mm之一高度。
  16. 如請求項12所述之方法，其中該基板支撐件包含一頂表面，該頂表面具有選自由半球形、菱形及三角形組成的群組中之一形狀。
  17. 如請求項16所述之方法，其中該基板支撐件之該頂表面具有小於約500μm之一徑向寬度。
  18. 一種基板支撐環，該支撐環包含：一內環；一外環，經由一平面部分連接至該內環之一外部周邊；一邊緣唇，自該內環之一內部周邊徑向延伸以形成一支撐凸部；以及一基板支撐件，自該支撐凸部之一頂表面向上延伸，其中該基板支撐件為繞該支撐凸部的一圓周安置的一連續環形主體，其中該基板支撐件包含碳化矽且該基板支撐件塗覆有一多晶矽(polycrystalline silicon)層，且其中該基板支撐件提供具有約5μm至約200μm的一徑向寬度之一基板接觸表面。
TW102138503A 2012-10-24 2013-10-24 用於急速熱處理的最小接觸邊緣環 TWI601233B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261718090P 2012-10-24 2012-10-24
US14/030,728 US9558982B2 (en) 2012-10-24 2013-09-18 Minimal contact edge ring for rapid thermal processing

Publications (2)

Publication Number Publication Date
TW201421612A TW201421612A (zh) 2014-06-01
TWI601233B true TWI601233B (zh) 2017-10-01

Family

ID=50485715

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102138503A TWI601233B (zh) 2012-10-24 2013-10-24 用於急速熱處理的最小接觸邊緣環

Country Status (5)

Country Link
US (1) US9558982B2 (zh)
KR (1) KR101923050B1 (zh)
CN (1) CN104704626B (zh)
TW (1) TWI601233B (zh)
WO (1) WO2014065955A1 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI541928B (zh) * 2011-10-14 2016-07-11 晶元光電股份有限公司 晶圓載具
CN104064490A (zh) * 2013-03-22 2014-09-24 株式会社东芝 半导体制造装置以及半导体晶片支架
KR102289792B1 (ko) 2013-11-06 2021-08-17 어플라이드 머티어리얼스, 인코포레이티드 졸 겔 코팅된 지지 링
SG11201608905XA (en) 2014-05-21 2016-12-29 Applied Materials Inc Thermal processing susceptor
US9517539B2 (en) * 2014-08-28 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer susceptor with improved thermal characteristics
CN107109688A (zh) * 2015-01-23 2017-08-29 应用材料公司 用于在晶片中消除沉积谷的新基座设计
JP6632469B2 (ja) * 2016-05-24 2020-01-22 三菱電機株式会社 ウエハトレイ
US20170353994A1 (en) * 2016-06-06 2017-12-07 Applied Materials, Inc. Self-centering pedestal heater
KR102099116B1 (ko) * 2017-07-31 2020-04-09 세메스 주식회사 기판 처리 장치 및 방법
KR102538177B1 (ko) 2017-11-16 2023-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
KR102404061B1 (ko) 2017-11-16 2022-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
US20190259635A1 (en) * 2018-02-17 2019-08-22 Applied Materials, Inc. Process kit for processing reduced sized substrates
KR102577456B1 (ko) 2018-03-20 2023-09-12 매슨 테크놀로지 인크 열처리 시스템에서의 국부적인 가열을 위한 지지 플레이트
KR102406942B1 (ko) 2019-09-16 2022-06-10 에이피시스템 주식회사 엣지 링 및 이를 포함하는 열처리 장치
US11764101B2 (en) * 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
KR20230117632A (ko) * 2020-02-11 2023-08-08 램 리써치 코포레이션 웨이퍼 베벨/에지 상의 증착을 제어하기 위한 캐리어 링 설계들
JP7461214B2 (ja) * 2020-05-19 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US20220136772A1 (en) * 2020-11-05 2022-05-05 Applied Materials, Inc. Rtp substrate temperature one for all control algorithm
US11791197B2 (en) 2021-08-20 2023-10-17 Mrsi Systems Llc Die bonding system with wafer lift and level assembly
US20240263299A1 (en) * 2023-02-06 2024-08-08 Applied Materials, Inc. Module for flipping substrates in vacuum

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005018161A1 (de) * 2005-04-19 2006-11-02 Aixtron Ag Halbleiterbehandlungsvorrichtung zur Durchführung eines RTP Verfahrens

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5848889A (en) * 1996-07-24 1998-12-15 Applied Materials Inc. Semiconductor wafer support with graded thermal mass
US5960555A (en) 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5879128A (en) 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US6395363B1 (en) 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
US6133152A (en) 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
US6280183B1 (en) * 1998-04-01 2001-08-28 Applied Materials, Inc. Substrate support for a thermal processing chamber
US6264467B1 (en) 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation
US6494955B1 (en) 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
JP2003059852A (ja) * 2001-08-10 2003-02-28 Dainippon Screen Mfg Co Ltd 基板の熱処理装置
US7256375B2 (en) 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
US7704327B2 (en) 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
US7127367B2 (en) 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
US6888104B1 (en) 2004-02-05 2005-05-03 Applied Materials, Inc. Thermally matched support ring for substrate processing chamber
US7648579B2 (en) 2004-02-13 2010-01-19 Asm America, Inc. Substrate support system for reduced autodoping and backside deposition
US8658945B2 (en) 2004-02-27 2014-02-25 Applied Materials, Inc. Backside rapid thermal processing of patterned wafers
JP2006093283A (ja) * 2004-09-22 2006-04-06 Sumco Corp ウェーハ支持具
US7972441B2 (en) 2005-04-05 2011-07-05 Applied Materials, Inc. Thermal oxidation of silicon using ozone
DE102006042026B4 (de) * 2006-09-07 2016-08-04 Infineon Technologies Ag Vorrichtung zum Halten eines Substrats und Verfahren zur Behandlung eines Substrats
US7589377B2 (en) * 2006-10-06 2009-09-15 The Boeing Company Gate structure with low resistance for high power semiconductor devices
US8221602B2 (en) * 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
JP5537766B2 (ja) * 2007-07-04 2014-07-02 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
US8283607B2 (en) 2008-04-09 2012-10-09 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US8249436B2 (en) 2008-05-02 2012-08-21 Applied Materials, Inc. System for non radial temperature control for rotating substrates
CN102124820B (zh) 2008-08-19 2014-09-10 朗姆研究公司 用于静电卡盘的边缘环
US8287650B2 (en) 2008-09-10 2012-10-16 Applied Materials, Inc. Low sloped edge ring for plasma processing chamber
KR102118069B1 (ko) 2009-12-31 2020-06-02 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 엣지 및 경사면 증착을 수정하기 위한 쉐도우 링
US8744250B2 (en) * 2011-02-23 2014-06-03 Applied Materials, Inc. Edge ring for a thermal processing chamber

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005018161A1 (de) * 2005-04-19 2006-11-02 Aixtron Ag Halbleiterbehandlungsvorrichtung zur Durchführung eines RTP Verfahrens

Also Published As

Publication number Publication date
US9558982B2 (en) 2017-01-31
KR20150074073A (ko) 2015-07-01
US20140113458A1 (en) 2014-04-24
CN104704626B (zh) 2017-12-05
KR101923050B1 (ko) 2018-11-29
TW201421612A (zh) 2014-06-01
CN104704626A (zh) 2015-06-10
WO2014065955A1 (en) 2014-05-01

Similar Documents

Publication Publication Date Title
TWI601233B (zh) 用於急速熱處理的最小接觸邊緣環
TWI512884B (zh) 改良的邊緣環的周緣
US9449858B2 (en) Transparent reflector plate for rapid thermal processing chamber
JP6688865B2 (ja) 熱処理チャンバのための支持シリンダー
US10147623B2 (en) Pyrometry filter for thermal process chamber
US10455642B2 (en) Rapid thermal processing chamber with linear control lamps
TWI613715B (zh) 反射性襯墊
US9768052B2 (en) Minimal contact edge ring for rapid thermal processing
TWI545654B (zh) 用於快速熱處理腔之透明反射板