JP6632469B2 - ウエハトレイ - Google Patents
ウエハトレイ Download PDFInfo
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- JP6632469B2 JP6632469B2 JP2016103218A JP2016103218A JP6632469B2 JP 6632469 B2 JP6632469 B2 JP 6632469B2 JP 2016103218 A JP2016103218 A JP 2016103218A JP 2016103218 A JP2016103218 A JP 2016103218A JP 6632469 B2 JP6632469 B2 JP 6632469B2
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- 238000009434 installation Methods 0.000 claims description 38
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 184
- 239000004065 semiconductor Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007634 remodeling Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
(ウエハトレイの構成)
図1は本実施の形態1におけるウエハトレイ10の上面図である。図2(a)は図1に示すウエハトレイ10のA−A’間における断面図である。ウエハトレイ10は、主面2aを含むトレイ本体2を備える。また、トレイ本体2は、トレイ本体2の径よりも小さな径を有するウエハ1aが設置可能なウエハ設置領域1が主面2a上に規定されている。また、トレイ本体2は、ここでは図示していない半導体製造装置によって処理可能なウエハ径と同等の径を有しており、またウエハトレイ10は、その半導体製造装置からは独立している。また、トレイ本体2の材質は、SiCもしくはTi、Al、石英、Si、ステンレス鋼のいずれかを含む。より具体的には、トレイ本体2の材質は、加熱を行う半導体プロセスでは熱膨張によるウエハ割れ等の問題を防ぐため、例えばSiCもしくはTi、Al、石英で作製する事が望ましく、加熱を行わない半導体プロセスでは例えばSiもしくはAl、ステンレス鋼を使用すれば安価に作製する事が可能である。なお、ウエハトレイ10に設置するウエハ1aは、例えば、SiもしくはSiC、GaN等である。
ウエハ1aを上記のウエハトレイ10に設置し、そのウエハトレイ10ごと半導体製造装置にて搬送もしくは処理を行うことにより、ロボット搬送・真空引き・大気解放等の各ステップにおいても、ウエハガイド3がストッパーとなり、ウエハトレイ10はウエハ1aの設置位置を安定化することができる。本実施の形態1では、6箇所にウエハガイド3を設けているため、確実にその設置位置を安定化できる。また、ウエハガイド3とウエハ1aとの間に間隔が設けられる場合、ウエハ設置領域1に対してウエハ1aの着脱が容易となり、また、ウエハガイド3とウエハ1aとが接している場合、ウエハ1aはウエハガイド3に確実に支持され、その設置位置が固定される。
図3は、実施の形態1に示したウエハトレイ10の変形例を表す平面図である。本実施の形態1の変形例に示すウエハトレイ10は、複数のウエハ設置領域1が互いに重なることなく主面2a上に規定されている。複数のウエハガイド3が各ウエハ設置領域1に対応して、上記の実施の形態1と同様に、主面2a上に設けられる。つまり、ウエハガイド3の設置箇所を、ウエハ1aの設置枚数に応じて増加させている。本変形例では、3つのウエハ設置領域1に対して計7箇所にウエハガイド3が設置されている。トレイ本体2の中央に設置されたウエハガイド3は各ウエハ設置領域1のいずれにも接してその機能を兼用している。よって、各ウエハ設置領域1に対しウエハガイド3が3箇所ずつ設けられている。以上のような構成により、ウエハトレイ10は、同時に処理可能なウエハ1aの枚数が増えるためランニングコストの低減および処理時間の短縮を可能とする。
本実施の形態2におけるウエハトレイ20について説明する。実施の形態1と同様の構成および動作は説明を省略する。図4(a)は、本実施の形態2におけるウエハトレイ20の平面図であり、図4(b)は図4(a)のC−C’間における断面図である。ウエハトレイ20は、実施の形態1に記載のウエハトレイ10のウエハガイド3に代わり、ザグリ部6を備える。すなわち、ウエハトレイ20は、ウエハ設置領域1を開口とし、ウエハ設置領域1の輪郭に沿った側壁6aを含むザグリ部6をさらに備える。またザグリ部6は底面6bを含む。また、ウエハトレイ20は、ザグリ部6の内側に、トレイ本体2を貫通する貫通穴7をさらに備える。
ウエハ1aはザグリ部6の底面6bに設置される。ウエハ1aが設置されたウエハトレイ20を用いた半導体製造装置の各処理ステップにおいて、トレイ本体2上のザグリ部6の側壁6aがストッパーの機能を発揮し、ウエハ1aの設置位置を安定化する。つまり、ザグリ部6は、実施の形態1のウエハガイド3と同等の効果を奏する。
図5は、実施の形態2に示したウエハトレイ20の変形例を表す平面図である。本実施の形態1の変形例に示すウエハトレイ20は、複数のウエハ設置領域1が互いに重なることなく主面2a上に規定されている。複数のザグリ部6が各ウエハ設置領域1に対応して、上記の実施の形態1と同様に、主面2aに設けられる。本変形例では、3箇所のウエハ設置領域1のそれぞれにザグリ部が設置されている。以上のような構成により、ウエハトレイ20は、同時に処理可能なウエハ1aの枚数が増えるためランニングコストの低減および処理時間の短縮を可能とする。
Claims (4)
- 第1の径を有する主面を備え、当該第1の径よりも小さな第2の径を有するウエハが設置可能なウエハ設置領域が前記主面上に規定されたトレイ本体と、
前記ウエハ設置領域の外側でかつ当該ウエハ設置領域の輪郭に隣接して前記主面に離散的に設けられたウエハガイドとを備え、
前記ウエハガイドは、裏面と頂部とを含み、前記裏面が前記主面に接して固定され、前記頂部の位置が前記主面よりも高く、
前記ウエハガイドの材料は硬化剤であり、
前記硬化剤は無機接着剤であり、
前記無機接着剤は、セラミック接着剤であることを特徴とするウエハトレイ。 - 前記トレイ本体と前記ウエハガイドとは、前記主面に対し前記ウエハガイドが着脱可能に固定される嵌合構造を備える請求項1に記載のウエハトレイ。
- 複数の前記ウエハ設置領域が互いに重なることなく前記主面上に規定され、
複数の前記ウエハガイドが各前記ウエハ設置領域に対応して設けられる請求項1もしくは請求項2に記載のウエハトレイ。 - 前記ウエハ設置領域の少なくとも一部の前記輪郭を含んで前記主面に設けられるウエハ着脱用開口をさらに備える請求項1から請求項3のいずれか一項に記載のウエハトレイ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2016103218A JP6632469B2 (ja) | 2016-05-24 | 2016-05-24 | ウエハトレイ |
US15/387,869 US10950486B2 (en) | 2016-05-24 | 2016-12-22 | Wafer tray |
DE102017206993.7A DE102017206993A1 (de) | 2016-05-24 | 2017-04-26 | Wafer-Träger |
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JP2016103218A JP6632469B2 (ja) | 2016-05-24 | 2016-05-24 | ウエハトレイ |
Publications (2)
Publication Number | Publication Date |
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JP2017212282A JP2017212282A (ja) | 2017-11-30 |
JP6632469B2 true JP6632469B2 (ja) | 2020-01-22 |
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JP2016103218A Active JP6632469B2 (ja) | 2016-05-24 | 2016-05-24 | ウエハトレイ |
Country Status (3)
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US (1) | US10950486B2 (ja) |
JP (1) | JP6632469B2 (ja) |
DE (1) | DE102017206993A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109244030A (zh) * | 2018-07-09 | 2019-01-18 | 浙江晶盛机电股份有限公司 | 一种用于外延生长装置的多功能晶片衬底基座 |
CN113235072A (zh) * | 2021-04-13 | 2021-08-10 | 拓荆科技股份有限公司 | 一种可用于机械手传输的托盘 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0590238A (ja) * | 1991-09-27 | 1993-04-09 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置の基板回転保持具 |
JPH06151550A (ja) | 1992-11-05 | 1994-05-31 | Toshiba Corp | ウェハーフォーク |
US5800686A (en) * | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
JPH0718440U (ja) * | 1993-09-07 | 1995-03-31 | 日新電機株式会社 | 多形状基板対応型試料台 |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
JPH0878513A (ja) * | 1994-09-02 | 1996-03-22 | Kokusai Electric Co Ltd | 半導体ウェーハホルダー及び半導体製造装置 |
JP2001345300A (ja) * | 2000-05-31 | 2001-12-14 | Disco Abrasive Syst Ltd | 半導体ウエーハ加工体および半導体ウエーハ加工体を保持するチャックテーブルを備えた加工装置 |
JP4526683B2 (ja) * | 2000-10-31 | 2010-08-18 | 株式会社山形信越石英 | 石英ガラス製ウェーハ支持治具及びその製造方法 |
JP2002334817A (ja) * | 2001-05-08 | 2002-11-22 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
US20050092255A1 (en) * | 2003-11-04 | 2005-05-05 | Taiwan Semiconductor Manufacturing Co. Ltd. | Edge-contact wafer holder for CMP load/unload station |
JP2007109771A (ja) * | 2005-10-12 | 2007-04-26 | Matsushita Electric Ind Co Ltd | プラズマ処理装置用のトレイ |
CN101663744B (zh) | 2007-04-23 | 2012-08-15 | 株式会社爱发科 | 支撑部件以及托架和支撑方法 |
US20100098519A1 (en) * | 2008-10-17 | 2010-04-22 | Memc Electronic Materials, Inc. | Support for a semiconductor wafer in a high temperature environment |
US20100175237A1 (en) * | 2009-01-15 | 2010-07-15 | Diamond Productions Canada Ltd. | System for mounting an abrasive tool to a drive plate of grinding and polishing machines |
WO2011070741A1 (ja) * | 2009-12-11 | 2011-06-16 | 株式会社Sumco | Cvd用トレーおよびそれを用いた成膜方法 |
WO2014065955A1 (en) * | 2012-10-24 | 2014-05-01 | Applied Materials, Inc. | Minimal contact edge ring for rapid thermal processing |
US9536770B2 (en) * | 2014-01-14 | 2017-01-03 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
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2016
- 2016-05-24 JP JP2016103218A patent/JP6632469B2/ja active Active
- 2016-12-22 US US15/387,869 patent/US10950486B2/en active Active
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2017
- 2017-04-26 DE DE102017206993.7A patent/DE102017206993A1/de active Pending
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JP2017212282A (ja) | 2017-11-30 |
US10950486B2 (en) | 2021-03-16 |
US20170345704A1 (en) | 2017-11-30 |
DE102017206993A1 (de) | 2017-11-30 |
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