CN104704626A - 用于快速热处理的最小接触边缘环 - Google Patents

用于快速热处理的最小接触边缘环 Download PDF

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CN104704626A
CN104704626A CN201380051474.2A CN201380051474A CN104704626A CN 104704626 A CN104704626 A CN 104704626A CN 201380051474 A CN201380051474 A CN 201380051474A CN 104704626 A CN104704626 A CN 104704626A
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潘恒
赛拉朱·泰拉瓦尔尤拉
凯文·J·鲍蒂斯塔
杰弗里·托宾
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Abstract

本公开内容的实施例大体涉及一种在工艺腔室中支撑基板的支撑环。在一个实施例中，支撑环包含：内环；外环，所述外环通过平面部分连接至内环的外部周边；边缘唇，所述边缘唇从内环的内部周边径向向内延伸以形成支撑凸部；及基板支撑件，所述基板支撑件从边缘唇的顶表面向上延伸。基板支撑件可为绕边缘唇的圆周设置的连续环形体。基板支撑件从背侧绕基板的整个周边支撑基板而具有最小化的接触表面以将基板与边缘唇热切断。特定而言，基板支撑件提供与基板的背表面的实质线接触。

Description

用于快速热处理的最小接触边缘环
技术领域
本公开内容的实施例大体涉及一种在工艺腔室中支撑基板的支撑环。
背景技术
在诸如半导体基板之类的基板处理中，将基板放置于工艺腔室中的支撑件上且在工艺腔室中维持适宜的处理条件。举例而言，可在受控的加热周期中加热基板以热处理所述基板。例如，能通过设置于腔室中的基板上方和/或下方的加热灯阵列来加热基板。能使用热处理例如来对基板上的已经离子注入的层进行退火、执行热氧化或氮化工艺或在基板上执行热化学气相沉积工艺。
已观察到，横跨基板的温度梯度的变化能导致基板的不均匀处理。由于来自接触支撑件(或其他腔室部件)的基板区域及不接触支撑件的基板区域的不均匀对流或传导性热损失，在不同的基板区域出现不均匀的温度。能使用基板支撑环减小基板中的温度梯度，所述基板支撑环从腔室壁向内延伸且围绕基板的周边。具体而言，通过具有接触基板边缘的环形唇的支撑环的边缘在基板的周边上支撑待热处理的基板。支撑环有效地扩展或推出基板中从基板周边至支撑环的外部边缘的温度梯度。基板与支撑环的重叠亦避免或最小化高温辐射能从辐射热源(通常设置于基板上方)在支撑环内侧或外侧上的支撑环边缘周围漏失。
具有环形边缘的支撑环可能无法在快速加热速率工艺中提供横跨基板的足够的温度均匀性，所述快速加热速率工艺例如在快速热处理(rapid thermalprocessing；RTP)系统中具有至少约200℃/秒的加热速率的工艺。在这些工艺中，支撑环与基板之间的加热速率差导致沿基板的周边的温度梯度在加热工艺步骤期间变得不可接受地高。基板亦可经历由固体-固体热接触的方位变化引起的温度变化，主要取决于基板与支撑环之间的变化的表面光洁度及平面度/平坦度。在某些情况中，因为基板与支撑环的环形唇在基板的边缘附近重叠，所以仅仅通过测量及调整基板的温度难以实现边缘附近的均匀温度分布。特别是在减小的压强(例如3托)下加热基板时，尤其难以实现横跨基板的温度均匀性。这是因为基板与支撑环之间重叠区域处的接触阻力(contact resistance)在较低压强下更大(因为通过紧密接触点的流动是主导的)，使基板的边缘处的温度分布比中央区域处的温度分布明显更高。
因此，需要具有改良的支撑环以避免或最小化基板与支撑环之间的热耦合，使得支撑环不会在热处理期间在基板内产生过大的温度梯度。
发明内容
本公开内容的实施例大体涉及一种在工艺腔室中的热处理期间支撑基板的支撑环。由支撑环的边缘唇于基板周边支撑待热处理的基板。支撑环可沿工艺腔室的内部圆周表面径向向内延伸并围绕基板的周边。支撑环具有边缘唇，所述边缘唇从支撑环的表面径向向内延伸。在一个实施例中，边缘唇被提供有沿边缘唇设置(亦即，绕边缘唇的圆周布置)的连续环状基板支撑件。边缘唇从边缘唇的顶表面延伸。基板支撑件从背侧绕基板的整个周边支撑基板而具有最小化的接触表面以将基板与边缘唇热切断。基板支撑件提供与基板的背表面的实质线接触。在一个实例中，基板支撑件具有半球形顶表面以减小可用于支撑环的边缘唇与基板之间热传导的接触面积，导致横跨基板的具有最小边缘温度梯度的改良的温度分布。
在一个实施例中，提供一种基板支撑环。所述基板支撑环包含：环形主体(ring body)；边缘唇，所述边缘唇从环形主体的表面径向向内延伸；及基板支撑件，所述基板支撑件从边缘唇的顶表面向上延伸，其中基板支撑件为连续环形体(ring-shaped body)。
在另一实施例中，支撑环包含：内环；外环，所述外环通过平面部分连接至内环的外部周边；及边缘唇，所述边缘唇从内环的内部周边径向向内延伸以形成支撑凸部(ledge)。支撑环包含从边缘唇的顶表面向上延伸的基板支撑件，且基板支撑件为设置于边缘唇的边缘附近内的连续环形体。基板支撑件从背侧绕基板的整个周边支撑基板而具有最小化的接触表面以将基板与边缘唇热切断。特定而言，基板支撑件提供与基板的背表面的实质线接触。
在又另一实施例中，提供一种在热处理腔室中处理基板的方法。所述方法包括以下步骤：提供基板支撑环，所述基板支撑环具有环形主体及从环形主体的表面径向向内延伸的边缘唇；及通过围绕边缘唇的圆周设置的基板支撑件来在基板的周边边缘附近支撑基板的背表面，其中所述基板支撑件被配置成通过与基板的背表面的线接触来最小化基板与支撑环之间的热耦合。
附图说明
为了能详细理解本公开内容的上述特征，可通过参考实施例获得以上简要概述的本公开内容的更具体的描述，一些实施例图示于附图中。然而，应注意，附图仅图示出本公开内容的典型实施例，且因此这些附图不应被视为对本公开内容范围的限制，因为本公开内容可允许其他同等有效的实施例。
图1示意地图示具有基板支撑环的示例性快速热处理腔室。
图2A示意地图示根据一个实施例的可用于代替图1的基板支撑环的具有连续环状基板支撑件的支撑环的侧视截面图。
图2B示意地图示图2A的边缘唇的局部俯视图。
图2C示意地图示根据另一实施例的边缘唇的局部俯视图。
具体实施方式
示例性快速热处理腔室
图1示意地表示快速热处理腔室10。待热处理的基板12(例如诸如硅基板之类的半导体基板)穿过阀或出入口13进入处理腔室10的工艺区域18中。由环形支撑环14在基板周边支撑基板12。边缘唇15从环形支撑环14向内延伸并接触基板12的周边边缘。可定向基板以使在基板12的前表面中已形成的处理特征16朝上面向在基板上侧由透明石英窗口20界定的工艺区域18。亦即，基板12的前表面面向灯26的阵列。在一些实施例中，具有形成于基板12的前表面上的处理特征的基板12的前表面可不面向灯26的阵列，亦即面向高温计40。与示意图相反，特征16的大部分不突出超过基板12的前表面的实质距离，而是在前表面的平面内及平面附近构成图案。
多个升降杆22(比如三个升降杆)可上升及下降以当在轮叶或机械手叶片(未图示)之间传递基板时支撑基板12的背侧，将基板送入处理腔室中及支撑环14上。将辐射加热设备24定位于窗口20上方且配置所述辐射加热设备以将辐射能通过窗口20导向基板12。在处理腔室10中，辐射加热设备可包括大量(示例性数目为409)高强度卤钨灯26，这些卤钨灯定位于窗口20上方以六边形密集装填(close-packed)的阵列布置的各个反射管道27中。灯26的阵列有时称为灯头。然而，应设想到，可替代使用其他辐射加热设备。大体而言，这些配置涉及电阻式加热以迅速提升辐射源的温度。适合的灯的实例包括：汞汽灯，所述汞汽灯具有围绕灯丝的玻璃或硅石的包封；及闪光灯，所述闪光灯包含围绕诸如氙之类的气体的玻璃或硅石的包封，当激励所述气体时气体提供热源。如本文所使用，术语灯意欲覆盖包括围绕热源的包封的灯。灯的“热源”指能够增加基板的温度的材料或元件，例如能被激励的灯丝或气体或发射辐射的材料的固体区域(比如LED或固态激光器及激光二极管)。
如本文所使用，快速热处理或RTP指能够以约50℃/秒及更高的速率(例如以约100℃/秒至150℃/秒的速率及约200℃/秒至400℃/秒的速率)均匀加热基板的设备或工艺。RTP腔室中的典型降温(冷却)速率处于约80℃/秒至150℃/秒的范围内。在RTP腔室中执行的一些工艺要求横跨基板的温度变化小于几摄氏度。因此，RTP腔室必须包括灯或其他适合的加热系统及加热系统控制，这些系统能够以高达约100℃/秒至150℃/秒及约200℃/秒至400℃/秒的速率加热，使得快速热处理腔室与不具有能够以这些速率快速加热的加热系统及加热控制系统的其他类型热腔室区别开来。具有此加热控制系统的RTP腔室可在小于5秒内使样本退火，例如在小于1秒内及在一些实施例中在数毫秒内使样本退火。
将横跨基板12的温度控制至横跨基板12均匀的严密界定的温度是重要的。一种改良均匀性的被动手段可包括在基板12下方设置的反射体28。反射体28平行于基板12延伸且延伸越过比基板12更大的区域。反射体28有效地将从基板12发射的热辐射反射回基板12以增强基板12的表观发射率。基板12与反射体28之间的间隔可介于约3mm至9mm之间，且腔的宽度与厚度的深宽比有利地大于20。可由铝制成且具有高反射性表面涂层或多层介电干涉镜的反射体28的顶部与基板12的背侧形成用于增强基板的有效发射率的反射腔，从而改良温度测量的准确度。在某些实施例中，反射体28可具有更加不规则的表面或具有黑色或其他颜色的表面以更近似黑体壁。可在第二壁53(第二壁53是由金属制成的水冷式基座53)上放置反射体28以尤其在冷却期间将来自基板的过量辐射散去。因此，处理腔室10的工艺区域具有至少两个实质平行的壁，其中第一壁为窗口20，窗口20由对辐射透明的材料(比如石英)制成，第二壁53实质上平行于第一壁且由明显不透明的金属制成。
一种改良均匀性的方式包括在可旋转圆筒30上支撑支撑环14，所述圆筒磁性耦合至位于处理腔室10外部的可旋转凸缘32。电机(未图示)使凸缘32旋转且因此使基板围绕基板的中心34旋转，所述中心亦为大体对称的腔室的中心线。或者，可旋转圆筒30的底部可为磁浮圆筒，通过设置于可旋转凸缘32中的磁体将所述磁浮圆筒固持在适当位置且由可旋转凸缘32中的来自可旋转凸缘32中的线圈的旋转磁场使所述圆筒旋转。
改良均匀性的另一方式是将灯26分成绕中心轴34大体环状布置的区域。控制电路系统改变传递至不同区域中的灯26的电压，从而调制辐射能的径向分布。分区加热的动态控制受一个或多个高温计40影响，这些高温计通过被定位成穿过反射体28中的孔而面向基板12的背侧的一或更多个光学光导管42耦接，以测量横跨旋转基板12的半径的温度。光导管42可由包括蓝宝石、金属及硅石(silica)纤维的各种结构形成。计算机化控制器44接收高温计40的输出且因此控制供给至灯26的不同环的电压，从而在处理期间动态控制辐射加热强度及图案。高温计通常测量介于约700nm至1000nm的范围内的例如40nm的窄波长带宽中的光强度。控制器44或其他仪器通过从保持在某温度的黑体辐射的光强度的光谱分布的熟知的普朗克分布(Planck distribution)来将光强度转换成温度。然而，测高温术受到基板12正被扫描的部分的发射率的影响。发射率ε可在对于黑体的1至对于完美反射体的0之间变化，且因此是基板背侧的反射率R＝1-ε的反测量值(inverse measure)。尽管基板的背表面通常是均匀的以致预期均匀的发射率，但是背侧组成可根据当前处理而变化。可通过进一步包括发射率仪(emissometer)及控制器44内部的控制算法来改良测高温术，所述发射率仪用以光学地探测基板以在相关波长范围内测量发射率仪面对的基板的部分的发射率或反射率，所述控制算法用以包括测量的发射率。
示例性支撑环
图2A是根据一个实施例的可用于代替图1的支撑环14的支撑环200的示意性侧视截面图。可在处理腔室(例如图1所示的快速热处理腔室10)内设置图2A图示的支撑环200，且支撑环200可沿处理腔室10的内部圆周表面60径向向内延伸。支撑环可为连续环状体(或在一些实施例中可为非连续的环状体)，所述环状体实质上围绕基板的周边。如下文中将更详细论述的，支撑环围绕具有环形基板支撑件的边缘唇以与基板的背表面线接触。在一些实施例中，边缘唇可具有沿支撑环的圆周变化的径向宽度以便在加热工艺期间控制边缘唇的弯曲。应注意，仅出于说明性目的将基板212图示为具有方形边缘，因为基板212可具有圆形边缘。
在图2A中所示的一个实施例中，支撑环200通常包括具有中央开口290(图2B)的环形主体。支撑环200具有外环202及内环204。外环202通过平面部分206连接至内环204，平面部分206从外环202的内部周边203径向向内延伸至内环204的外部周边205。可通过诸如图1中所示的可旋转圆筒30之类的圆筒230支撑外环202。对于顶部加热类型配置，可旋转圆筒230可仅从外环202向内接触支撑环200。亦即，外环202的底表面与平面部分206的顶表面206a相对以防止漏光及提供所需机械稳定性。支撑环200进一步包括边缘唇208，边缘唇208从内环204的内部周边207径向向内延伸以形成支撑凸部，来在基板212的周边边缘附近支撑基板212的背表面212b。
边缘唇208的宽度可根据基板212的直径变化。边缘唇208可具有介于约15mm至约40mm之间的宽度。边缘唇208可在基板212下方延伸足够距离，为标称12英寸(300mm)的基板产生介于约0.5mm与约5.0mm之间的范围内的径向重叠区域“D1”。在一些情况中，可将径向重叠区域“D1”延伸至约15mm至约30mm，例如对于300mm基板延伸至约20mm至约25mm。应注意，本公开内容中所使用的术语“重叠”按图2A中D1所示测量。边缘唇208可为具有一致径向宽度的连续环形。或者，边缘唇208可具有沿支撑环的圆周变化的径向宽度以减少用于制造边缘唇的材料的量及以最小化或消除加热工艺期间边缘唇208的弯曲。
边缘唇208的顶表面208a可相对低于平面部分206的顶表面206a以形成能够于内环204的内部周边207内固持基板212的凹部214。具体而言，通过边缘唇208经由在边缘唇208的顶表面208a上形成的基板支撑件210来支撑基板。内环204的上表面可处于与基板212的上表面212a的高程度(elevation)大致相同的高程度。在一个实施例中，内环204可具有约0mm至约3mm的高度“D2”，例如约1mm的高度。内环204可具有减小的高度以用于降低晶片边缘温度，因为所述高度减小了基板212与支撑环200之间的热耦合。可将基板支撑件210定位于在基板212的背表面212b与边缘唇208之间所产生的重叠区域“D1”内。换言之，基板支撑件210被设置在边缘唇208的边缘附近内。基板支撑件210从边缘唇208的顶表面208a向上且垂直于边缘唇208的纵向轴“A”延伸。基板支撑件210可具有与内环204的高度“D2”相同的高度“H”。在一个实施例中，基板支撑件210具有约0.5mm至约3mm的高度“H”，例如约0.7mm的高度。
基板支撑件210可为绕边缘唇208的圆周设置的连续环形体。在图2B中图示环形体的一实例，该图示意地图示图2A的边缘唇的局部俯视图。配置基板支撑件210以使得基板支撑件210的一部分围绕基板(图2B中未图示)的周边且部分地越过基板的周边。不管加热灯的配置如何，具有连续环形主体的基板支撑件210可为有利的，因为连续环形主体通过阻挡工艺腔室中源辐射的光到达与源辐射相对设置的高温计而避免可能的漏光问题。另外，相信连续环形主体为基板212提供了更好且稳固的支撑，因为在加热工艺期间由基板支撑件210旋转地支撑基板212。应设想到，基板支撑件可由绕边缘唇208的圆周分布在边缘唇208的顶表面208a上的离散或分离部分260形成，产生如图2C所示的环状基板支撑件。在此情况中，离散部分260的数目的范围可从3个至10个，例如如图2C所示的7个离散部分260。亦应设想到，离散部分260的数目可根据离散部分260的尺寸以及边缘唇208的表面积而变化。
在使用离散部分260的情况中，应为径向重叠区域定尺寸以实质上阻挡从灯头至位于基板下方的高温计的任何可能的漏光。举例而言，可将径向重叠区域延伸至约15mm至约30mm，例如对于300mm基板延伸至约20mm至约25mm。
可使用激光加工技术或任何适合的技术在边缘唇208的顶表面208a上形成基板支撑件210。基板支撑件210可为任何适合形状，比如矩形、菱形、正方形、半球形、六边形、三角形突起或不同形状突起的混合。基板支撑件210可为与基板具有减小接触表面的任何形状。举例而言，基板支撑件210可具有半球形顶表面。就有效热质量(thermal mass)减小而言，半球形顶表面可为有利的，因为半球形顶表面能够通过将表面接触转为连续线接触(图2B)或离散线接触(图2C)来进一步减小边缘唇与基板之间的表面接触面积。
在本公开内容中，“线接触”可指具有小于约500μm(例如约5μm与约200μm之间，比如50μm)的径向宽度的线。基板支撑件210以边缘唇208与基板212之间的最小接触面积及最小热传递支撑基板。对于标称12英寸(300mm)的基板，边缘唇208至基板的接触面积可小于约15cm2或更小，例如约5cm2或更小，比如约1cm2至约3cm2。应设想到，与基板的背表面实体接触的线的宽度可根据基板支撑件210的形状变化。亦应设想到，只要以基板支撑件210与基板212的背表面212b之间的最小化接触面积安全地支撑基板212，基板支撑件210的形状和/或尺寸便可变化。在一个实例中，基板支撑件210的尺寸可在约0.1mm与约10mm之间的广泛限制范围内变化，比如在约0.2mm与约2mm之间，例如宽度为约1mm。
将表面接触转换成连续线接触实质上减小了可用于支撑环200的边缘唇208与基板212之间热传导的接触面积，从而即使在约3托的减小压强下也消除或最小化热处理期间基板中过大的温度梯度。减小基板212与支撑环200之间的表面接触面积亦将允许更好地管理由基板212与边缘唇208的重叠引起的热质量不连续性。因此，减小了由基板的边缘周围的热损失导致的热梯度变形，产生横跨基板的具有最小边缘温度梯度的改良的温度分布。边缘唇208与基板212之间减小的接触面积进一步减少了处理腔室中可能的颗粒污染。对于如图1所示的顶部辐射加热配置，能调制来自辐射热源的辐射以仅用以加热基板而无需过多担心重叠区域中的热质量不连续性，因为通过基板支撑件210将基板与边缘唇208热切断。因此，本发明的基板支撑件可转变为更快的能实现的加热升温速率或减小的剧增功率(spike power)情况。
基板支撑件210可由对用于基板的温度测量的频率范围内的辐射透明的材料制成。在一个实例中，基板支撑件210由碳化硅制成。亦设想到诸如碳化硅合金、陶瓷或高温材料(比如非晶硅石、Al2O2、ZrO2、Si3N4或类似材料)之类的其他材料。基板支撑件210可视情况涂覆有二氧化硅(SiO2)或任何其他适合材料以避免高温下基板支撑件与基板212的背表面212b的Si-Si粘结，所述粘结可导致基板潜在地粘附至基板支撑件。支撑环200可由类似于基板的材料制成以便最小化基板与支撑环之间的吸收率/反射率失配。在一个实例中，支撑环200由碳化硅制成。在某些实施例中，支撑环200可视情况涂覆有多晶硅(polycrystalline silicon；polysilicon)层以使得支撑环200对用于热处理腔室中基板的温度测量的频率范围内的辐射不透明。在此情况中，根据支撑环200的厚度或根据例如在支撑环200中所使用的SiC的不透明度，多晶硅层的厚度可在约20μm与约50μm之间的范围内变化。
尽管前述内容针对本公开内容的实施例，但是可在不背离本公开内容的基本范围的情况下设计出其他及进一步的实施例，且由以下权利要求书确定本公开内容的范围。

Claims (15)

1.一种基板支撑环，所述支撑环包含：
环形主体；
边缘唇，所述边缘唇从所述环形主体的表面径向向内延伸；以及
基板支撑件，所述基板支撑件从所述边缘唇的顶表面向上延伸，其中所述基板支撑件为沿所述边缘唇设置的连续环形体。
2.如权利要求1所述的支撑环，其中所述基板支撑件具有约0.5mm至约3mm的高度。
3.如权利要求1所述的支撑环，其中所述基板支撑件包含顶表面，所述顶表面具有选自由半球形、菱形及三角形组成的群组的形状。
4.如权利要求3所述的支撑环，其中所述基板支撑件的所述顶表面具有小于约500μm的径向宽度。
5.一种基板支撑环，所述支撑环包含：
内环；
外环，所述外环通过平面部分连接至所述内环的外部周边；
边缘唇，所述边缘唇从所述内环的内部周边径向向内延伸以形成支撑凸部；以及
基板支撑件，所述基板支撑件从所述边缘唇的顶表面向上延伸，其中所述基板支撑件为沿所述边缘唇设置的连续环形体。
6.如权利要求5所述的支撑环，其中所述平面部分从所述外环的内部周边径向向内延伸至所述内环的所述外部周边。
7.如权利要求5所述的支撑环，其中所述基板支撑件包含顶表面，所述顶表面具有选自由半球形、菱形及三角形组成的群组的形状。
8.如权利要求7所述的支撑环，其中所述基板支撑件的所述顶表面具有小于约500μm的径向宽度。
9.如权利要求8所述的支撑环，其中所述基板支撑件包含半球形顶表面。
10.如权利要求5所述的支撑环，其中所述基板支撑件具有约0.5mm至约3mm的高度。
11.如权利要求5所述的支撑环，其中所述内环具有约0mm至约3mm的高度。
12.一种在热处理腔室中处理基板的方法，所述方法包含以下步骤：
提供基板支撑环，所述基板支撑环具有环形主体及从所述环形主体的表面径向向内延伸的边缘唇；以及
通过绕所述边缘唇的圆周设置的基板支撑件在基板的周边边缘附近支撑所述基板的背表面，其中所述基板支撑件是从所述边缘唇的顶表面向上延伸的连续环形体且所述基板支撑件通过与所述基板的所述背表面线接触来支撑所述基板。
13.如权利要求12所述的方法，其中所述边缘唇在所述基板的所述背表面下方延伸约0.5mm至约5.0mm的距离。
14.如权利要求12所述的方法，其中所述基板支撑件具有约0.5mm至约3mm的高度。
15.如权利要求12所述的方法，其中所述基板支撑件包含顶表面，所述顶表面具有选自由半球形、菱形及三角形组成的群组的形状。
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