CN105264647B - 硅晶圆研磨用组合物 - Google Patents

硅晶圆研磨用组合物 Download PDF

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Publication number
CN105264647B
CN105264647B CN201480032514.3A CN201480032514A CN105264647B CN 105264647 B CN105264647 B CN 105264647B CN 201480032514 A CN201480032514 A CN 201480032514A CN 105264647 B CN105264647 B CN 105264647B
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CN
China
Prior art keywords
group
polishing
silicon wafer
abrasive grains
amide group
Prior art date
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Active
Application number
CN201480032514.3A
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English (en)
Chinese (zh)
Other versions
CN105264647A (zh
Inventor
土屋公亮
丹所久典
市坪大辉
森嘉男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
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Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of CN105264647A publication Critical patent/CN105264647A/zh
Application granted granted Critical
Publication of CN105264647B publication Critical patent/CN105264647B/zh
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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN201480032514.3A 2013-06-07 2014-05-02 硅晶圆研磨用组合物 Active CN105264647B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013-120328 2013-06-07
JP2013120328 2013-06-07
JP2014-010836 2014-01-23
JP2014010836 2014-01-23
PCT/JP2014/062176 WO2014196299A1 (ja) 2013-06-07 2014-05-02 シリコンウエハ研磨用組成物

Publications (2)

Publication Number Publication Date
CN105264647A CN105264647A (zh) 2016-01-20
CN105264647B true CN105264647B (zh) 2018-01-09

Family

ID=52007952

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480032514.3A Active CN105264647B (zh) 2013-06-07 2014-05-02 硅晶圆研磨用组合物

Country Status (8)

Country Link
US (2) US20160122591A1 (enExample)
EP (1) EP3007213B1 (enExample)
JP (2) JP6037416B2 (enExample)
KR (1) KR102239045B1 (enExample)
CN (1) CN105264647B (enExample)
SG (1) SG11201508398TA (enExample)
TW (1) TWI650410B (enExample)
WO (1) WO2014196299A1 (enExample)

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JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
US10748778B2 (en) 2015-02-12 2020-08-18 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
KR102520942B1 (ko) * 2015-02-12 2023-04-13 가부시키가이샤 후지미인코퍼레이티드 실리콘 웨이퍼의 연마 방법 및 표면 처리 조성물
WO2017011115A1 (en) * 2015-07-10 2017-01-19 Ferro Corporation Slurry composition and additives and method for polishing organic polymer-based ophthalmic substrates
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
WO2017150118A1 (ja) * 2016-02-29 2017-09-08 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
CN109716487B (zh) * 2016-09-21 2023-12-01 福吉米株式会社 表面处理组合物
KR20190134692A (ko) * 2017-03-31 2019-12-04 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP6916039B2 (ja) * 2017-06-05 2021-08-11 Atシリカ株式会社 研磨用組成物
CN111315835B (zh) * 2017-11-06 2022-08-26 福吉米株式会社 研磨用组合物及其制造方法
JP7353051B2 (ja) * 2019-03-26 2023-09-29 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP7356248B2 (ja) * 2019-03-28 2023-10-04 株式会社フジミインコーポレーテッド リンス用組成物およびリンス方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JP7512035B2 (ja) * 2019-12-24 2024-07-08 ニッタ・デュポン株式会社 研磨用組成物
JP7752601B2 (ja) * 2020-03-13 2025-10-10 株式会社フジミインコーポレーテッド 研磨用組成物
CN115244659A (zh) * 2020-03-13 2022-10-25 福吉米株式会社 研磨用组合物及研磨方法
JP7562453B2 (ja) 2021-03-12 2024-10-07 キオクシア株式会社 研磨液、研磨装置、及び研磨方法
JP2024523285A (ja) * 2021-06-14 2024-06-28 インテグリス・インコーポレーテッド 硬質基板の研削
KR20240167843A (ko) 2022-03-23 2024-11-28 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JPWO2024195575A1 (enExample) * 2023-03-20 2024-09-26
WO2025115883A1 (ja) * 2023-11-28 2025-06-05 大阪有機化学工業株式会社 研磨組成物

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Publication number Priority date Publication date Assignee Title
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
KR20010046395A (ko) * 1999-11-12 2001-06-15 안복현 연마용 조성물
TWI276169B (en) * 2003-01-31 2007-03-11 Hitachi Chemical Co Ltd CMP abrasive and polishing method
WO2006112519A1 (ja) * 2005-04-14 2006-10-26 Showa Denko K.K. 研磨組成物
WO2007055278A1 (ja) 2005-11-11 2007-05-18 Hitachi Chemical Co., Ltd. 酸化ケイ素用研磨剤、添加液および研磨方法
TWI437083B (zh) * 2006-07-28 2014-05-11 Showa Denko Kk 研磨組成物
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2008181955A (ja) * 2007-01-23 2008-08-07 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
SG10201605686XA (en) * 2008-02-01 2016-08-30 Fujimi Inc Polishing Composition And Polishing Method Using The Same
WO2009104517A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US8652350B2 (en) * 2008-02-27 2014-02-18 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion
KR101250090B1 (ko) * 2008-04-23 2013-04-03 히타치가세이가부시끼가이샤 연마제 및 이 연마제를 이용한 기판의 연마방법
WO2010122985A1 (ja) * 2009-04-20 2010-10-28 日立化成工業株式会社 半導体基板用研磨液及び半導体基板の研磨方法
CN102471726A (zh) 2009-07-15 2012-05-23 朗姆研究公司 高级基底清洁的材料和系统
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
JP4772156B1 (ja) 2010-07-05 2011-09-14 花王株式会社 シリコンウエハ用研磨液組成物
SG192220A1 (en) * 2011-02-03 2013-09-30 Nitta Haas Inc Polishing composition and polishing method using the same
SG11201405091TA (en) * 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP5822356B2 (ja) * 2012-04-17 2015-11-24 花王株式会社 シリコンウェーハ用研磨液組成物

Also Published As

Publication number Publication date
CN105264647A (zh) 2016-01-20
JP6360108B2 (ja) 2018-07-18
JPWO2014196299A1 (ja) 2017-02-23
US10745588B2 (en) 2020-08-18
EP3007213A4 (en) 2017-02-22
JP6037416B2 (ja) 2016-12-07
WO2014196299A1 (ja) 2014-12-11
EP3007213A1 (en) 2016-04-13
JP2016201557A (ja) 2016-12-01
TWI650410B (zh) 2019-02-11
KR102239045B1 (ko) 2021-04-12
US20170253767A1 (en) 2017-09-07
SG11201508398TA (en) 2015-11-27
KR20160013896A (ko) 2016-02-05
EP3007213B1 (en) 2020-03-18
US20160122591A1 (en) 2016-05-05
TW201510197A (zh) 2015-03-16

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