KR102239045B1 - 실리콘 웨이퍼 연마용 조성물 - Google Patents
실리콘 웨이퍼 연마용 조성물 Download PDFInfo
- Publication number
- KR102239045B1 KR102239045B1 KR1020157034595A KR20157034595A KR102239045B1 KR 102239045 B1 KR102239045 B1 KR 102239045B1 KR 1020157034595 A KR1020157034595 A KR 1020157034595A KR 20157034595 A KR20157034595 A KR 20157034595A KR 102239045 B1 KR102239045 B1 KR 102239045B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- polishing
- silicon wafer
- amide group
- containing polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H01L21/02024—
-
- H01L21/02052—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/129—Preparing bulk and homogeneous wafers by polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2013-120328 | 2013-06-07 | ||
| JP2013120328 | 2013-06-07 | ||
| JPJP-P-2014-010836 | 2014-01-23 | ||
| JP2014010836 | 2014-01-23 | ||
| PCT/JP2014/062176 WO2014196299A1 (ja) | 2013-06-07 | 2014-05-02 | シリコンウエハ研磨用組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160013896A KR20160013896A (ko) | 2016-02-05 |
| KR102239045B1 true KR102239045B1 (ko) | 2021-04-12 |
Family
ID=52007952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157034595A Active KR102239045B1 (ko) | 2013-06-07 | 2014-05-02 | 실리콘 웨이퍼 연마용 조성물 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20160122591A1 (enExample) |
| EP (1) | EP3007213B1 (enExample) |
| JP (2) | JP6037416B2 (enExample) |
| KR (1) | KR102239045B1 (enExample) |
| CN (1) | CN105264647B (enExample) |
| SG (1) | SG11201508398TA (enExample) |
| TW (1) | TWI650410B (enExample) |
| WO (1) | WO2014196299A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6403324B2 (ja) * | 2014-12-25 | 2018-10-10 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
| JP6366139B2 (ja) * | 2014-12-25 | 2018-08-01 | 花王株式会社 | シリコンウェーハ用研磨液組成物の製造方法 |
| KR102520942B1 (ko) * | 2015-02-12 | 2023-04-13 | 가부시키가이샤 후지미인코퍼레이티드 | 실리콘 웨이퍼의 연마 방법 및 표면 처리 조성물 |
| US10748778B2 (en) | 2015-02-12 | 2020-08-18 | Fujimi Incorporated | Method for polishing silicon wafer and surface treatment composition |
| CN107735471B (zh) * | 2015-07-10 | 2021-02-12 | 费罗公司 | 用于抛光有机聚合物基眼用基材的浆液组合物和添加剂以及方法 |
| JP6801964B2 (ja) * | 2016-01-19 | 2020-12-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びシリコン基板の研磨方法 |
| WO2017150118A1 (ja) * | 2016-02-29 | 2017-09-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびこれを用いた研磨方法 |
| SG11201901590SA (en) * | 2016-09-21 | 2019-03-28 | Fujimi Inc | Composition for surface treatment |
| WO2018180479A1 (ja) * | 2017-03-31 | 2018-10-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP6916039B2 (ja) * | 2017-06-05 | 2021-08-11 | Atシリカ株式会社 | 研磨用組成物 |
| KR102685348B1 (ko) | 2017-11-06 | 2024-07-17 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 그의 제조 방법 |
| JP7353051B2 (ja) * | 2019-03-26 | 2023-09-29 | 株式会社フジミインコーポレーテッド | シリコンウェーハ研磨用組成物 |
| JP7356248B2 (ja) * | 2019-03-28 | 2023-10-04 | 株式会社フジミインコーポレーテッド | リンス用組成物およびリンス方法 |
| CN110922897B (zh) * | 2019-11-18 | 2024-03-08 | 宁波日晟新材料有限公司 | 一种用于硅化合物的低雾值无损伤抛光液及其制备方法 |
| JP7512035B2 (ja) * | 2019-12-24 | 2024-07-08 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| US20230143074A1 (en) * | 2020-03-13 | 2023-05-11 | Fujimi Incorporated | Polishing composition and polishing method |
| JP7752601B2 (ja) * | 2020-03-13 | 2025-10-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7562453B2 (ja) | 2021-03-12 | 2024-10-07 | キオクシア株式会社 | 研磨液、研磨装置、及び研磨方法 |
| JP7821204B2 (ja) * | 2021-06-14 | 2026-02-26 | インテグリス・インコーポレーテッド | 硬質基板の研削 |
| KR20240167843A (ko) | 2022-03-23 | 2024-11-28 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| JPWO2024195575A1 (enExample) * | 2023-03-20 | 2024-09-26 | ||
| WO2024263357A1 (en) * | 2023-06-21 | 2024-12-26 | Corning Incorporated | Coated articles, methods of polishing, and methods of making the same |
| TW202540372A (zh) * | 2023-11-28 | 2025-10-16 | 日商大阪有機化學工業股份有限公司 | 研磨組合物 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100663781B1 (ko) * | 2003-01-31 | 2007-01-02 | 히다치 가세고교 가부시끼가이샤 | Cμρ연마제 및 연마방법 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447551B1 (ko) * | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
| KR20010046395A (ko) * | 1999-11-12 | 2001-06-15 | 안복현 | 연마용 조성물 |
| EP1870928A4 (en) * | 2005-04-14 | 2009-01-21 | Showa Denko Kk | POLISH |
| CN102965025B (zh) | 2005-11-11 | 2014-10-29 | 日立化成株式会社 | 氧化硅用研磨剂、其用途以及研磨方法 |
| TWI437083B (zh) * | 2006-07-28 | 2014-05-11 | 昭和電工股份有限公司 | 研磨組成物 |
| JP2008091524A (ja) * | 2006-09-29 | 2008-04-17 | Fujifilm Corp | 金属用研磨液 |
| JP2008181955A (ja) * | 2007-01-23 | 2008-08-07 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
| JP2009123880A (ja) * | 2007-11-14 | 2009-06-04 | Showa Denko Kk | 研磨組成物 |
| KR101564673B1 (ko) * | 2008-02-01 | 2015-10-30 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 이를 이용한 연마 방법 |
| WO2009104517A1 (ja) * | 2008-02-18 | 2009-08-27 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| US8652350B2 (en) * | 2008-02-27 | 2014-02-18 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion |
| TWI546373B (zh) * | 2008-04-23 | 2016-08-21 | 日立化成股份有限公司 | 研磨劑及其製造方法、基板研磨方法以及研磨劑套組及其製造方法 |
| WO2010122985A1 (ja) * | 2009-04-20 | 2010-10-28 | 日立化成工業株式会社 | 半導体基板用研磨液及び半導体基板の研磨方法 |
| SG177270A1 (en) | 2009-07-15 | 2012-02-28 | Lam Res Corp | Materials and systems for advanced substrate cleaning |
| JP5878020B2 (ja) * | 2009-11-11 | 2016-03-08 | 株式会社クラレ | 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法 |
| JP4772156B1 (ja) | 2010-07-05 | 2011-09-14 | 花王株式会社 | シリコンウエハ用研磨液組成物 |
| JP5939578B2 (ja) * | 2011-02-03 | 2016-06-22 | ニッタ・ハース株式会社 | 研磨用組成物およびそれを用いた研磨方法 |
| SG11201405091TA (en) * | 2012-02-21 | 2014-09-26 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set, and substrate polishing method |
| JP5822356B2 (ja) * | 2012-04-17 | 2015-11-24 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
-
2014
- 2014-05-02 CN CN201480032514.3A patent/CN105264647B/zh active Active
- 2014-05-02 JP JP2015521346A patent/JP6037416B2/ja active Active
- 2014-05-02 US US14/895,318 patent/US20160122591A1/en not_active Abandoned
- 2014-05-02 KR KR1020157034595A patent/KR102239045B1/ko active Active
- 2014-05-02 WO PCT/JP2014/062176 patent/WO2014196299A1/ja not_active Ceased
- 2014-05-02 SG SG11201508398TA patent/SG11201508398TA/en unknown
- 2014-05-02 EP EP14807048.5A patent/EP3007213B1/en active Active
- 2014-05-21 TW TW103117769A patent/TWI650410B/zh active
-
2016
- 2016-07-08 JP JP2016135649A patent/JP6360108B2/ja active Active
-
2017
- 2017-05-23 US US15/602,679 patent/US10745588B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100663781B1 (ko) * | 2003-01-31 | 2007-01-02 | 히다치 가세고교 가부시끼가이샤 | Cμρ연마제 및 연마방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3007213A4 (en) | 2017-02-22 |
| US20170253767A1 (en) | 2017-09-07 |
| CN105264647B (zh) | 2018-01-09 |
| TWI650410B (zh) | 2019-02-11 |
| CN105264647A (zh) | 2016-01-20 |
| JP6037416B2 (ja) | 2016-12-07 |
| JP2016201557A (ja) | 2016-12-01 |
| US20160122591A1 (en) | 2016-05-05 |
| JP6360108B2 (ja) | 2018-07-18 |
| JPWO2014196299A1 (ja) | 2017-02-23 |
| SG11201508398TA (en) | 2015-11-27 |
| EP3007213B1 (en) | 2020-03-18 |
| US10745588B2 (en) | 2020-08-18 |
| EP3007213A1 (en) | 2016-04-13 |
| KR20160013896A (ko) | 2016-02-05 |
| WO2014196299A1 (ja) | 2014-12-11 |
| TW201510197A (zh) | 2015-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
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| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
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| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
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| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
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| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
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| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |