KR102239045B1 - 실리콘 웨이퍼 연마용 조성물 - Google Patents

실리콘 웨이퍼 연마용 조성물 Download PDF

Info

Publication number
KR102239045B1
KR102239045B1 KR1020157034595A KR20157034595A KR102239045B1 KR 102239045 B1 KR102239045 B1 KR 102239045B1 KR 1020157034595 A KR1020157034595 A KR 1020157034595A KR 20157034595 A KR20157034595 A KR 20157034595A KR 102239045 B1 KR102239045 B1 KR 102239045B1
Authority
KR
South Korea
Prior art keywords
group
polishing
silicon wafer
amide group
containing polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157034595A
Other languages
English (en)
Korean (ko)
Other versions
KR20160013896A (ko
Inventor
고스케 츠치야
히사노리 단쇼
다이키 이치츠보
요시오 모리
Original Assignee
가부시키가이샤 후지미인코퍼레이티드
도아고세이가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 후지미인코퍼레이티드, 도아고세이가부시키가이샤 filed Critical 가부시키가이샤 후지미인코퍼레이티드
Publication of KR20160013896A publication Critical patent/KR20160013896A/ko
Application granted granted Critical
Publication of KR102239045B1 publication Critical patent/KR102239045B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • H01L21/02024
    • H01L21/02052
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/129Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020157034595A 2013-06-07 2014-05-02 실리콘 웨이퍼 연마용 조성물 Active KR102239045B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2013-120328 2013-06-07
JP2013120328 2013-06-07
JPJP-P-2014-010836 2014-01-23
JP2014010836 2014-01-23
PCT/JP2014/062176 WO2014196299A1 (ja) 2013-06-07 2014-05-02 シリコンウエハ研磨用組成物

Publications (2)

Publication Number Publication Date
KR20160013896A KR20160013896A (ko) 2016-02-05
KR102239045B1 true KR102239045B1 (ko) 2021-04-12

Family

ID=52007952

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157034595A Active KR102239045B1 (ko) 2013-06-07 2014-05-02 실리콘 웨이퍼 연마용 조성물

Country Status (8)

Country Link
US (2) US20160122591A1 (enExample)
EP (1) EP3007213B1 (enExample)
JP (2) JP6037416B2 (enExample)
KR (1) KR102239045B1 (enExample)
CN (1) CN105264647B (enExample)
SG (1) SG11201508398TA (enExample)
TW (1) TWI650410B (enExample)
WO (1) WO2014196299A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
KR102520942B1 (ko) * 2015-02-12 2023-04-13 가부시키가이샤 후지미인코퍼레이티드 실리콘 웨이퍼의 연마 방법 및 표면 처리 조성물
US10748778B2 (en) 2015-02-12 2020-08-18 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
CN107735471B (zh) * 2015-07-10 2021-02-12 费罗公司 用于抛光有机聚合物基眼用基材的浆液组合物和添加剂以及方法
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
WO2017150118A1 (ja) * 2016-02-29 2017-09-08 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
SG11201901590SA (en) * 2016-09-21 2019-03-28 Fujimi Inc Composition for surface treatment
WO2018180479A1 (ja) * 2017-03-31 2018-10-04 株式会社フジミインコーポレーテッド 研磨用組成物
JP6916039B2 (ja) * 2017-06-05 2021-08-11 Atシリカ株式会社 研磨用組成物
KR102685348B1 (ko) 2017-11-06 2024-07-17 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 그의 제조 방법
JP7353051B2 (ja) * 2019-03-26 2023-09-29 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP7356248B2 (ja) * 2019-03-28 2023-10-04 株式会社フジミインコーポレーテッド リンス用組成物およびリンス方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JP7512035B2 (ja) * 2019-12-24 2024-07-08 ニッタ・デュポン株式会社 研磨用組成物
US20230143074A1 (en) * 2020-03-13 2023-05-11 Fujimi Incorporated Polishing composition and polishing method
JP7752601B2 (ja) * 2020-03-13 2025-10-10 株式会社フジミインコーポレーテッド 研磨用組成物
JP7562453B2 (ja) 2021-03-12 2024-10-07 キオクシア株式会社 研磨液、研磨装置、及び研磨方法
JP7821204B2 (ja) * 2021-06-14 2026-02-26 インテグリス・インコーポレーテッド 硬質基板の研削
KR20240167843A (ko) 2022-03-23 2024-11-28 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JPWO2024195575A1 (enExample) * 2023-03-20 2024-09-26
WO2024263357A1 (en) * 2023-06-21 2024-12-26 Corning Incorporated Coated articles, methods of polishing, and methods of making the same
TW202540372A (zh) * 2023-11-28 2025-10-16 日商大阪有機化學工業股份有限公司 研磨組合物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663781B1 (ko) * 2003-01-31 2007-01-02 히다치 가세고교 가부시끼가이샤 Cμρ연마제 및 연마방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
KR20010046395A (ko) * 1999-11-12 2001-06-15 안복현 연마용 조성물
EP1870928A4 (en) * 2005-04-14 2009-01-21 Showa Denko Kk POLISH
CN102965025B (zh) 2005-11-11 2014-10-29 日立化成株式会社 氧化硅用研磨剂、其用途以及研磨方法
TWI437083B (zh) * 2006-07-28 2014-05-11 昭和電工股份有限公司 研磨組成物
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2008181955A (ja) * 2007-01-23 2008-08-07 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
KR101564673B1 (ko) * 2008-02-01 2015-10-30 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
WO2009104517A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US8652350B2 (en) * 2008-02-27 2014-02-18 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion
TWI546373B (zh) * 2008-04-23 2016-08-21 日立化成股份有限公司 研磨劑及其製造方法、基板研磨方法以及研磨劑套組及其製造方法
WO2010122985A1 (ja) * 2009-04-20 2010-10-28 日立化成工業株式会社 半導体基板用研磨液及び半導体基板の研磨方法
SG177270A1 (en) 2009-07-15 2012-02-28 Lam Res Corp Materials and systems for advanced substrate cleaning
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
JP4772156B1 (ja) 2010-07-05 2011-09-14 花王株式会社 シリコンウエハ用研磨液組成物
JP5939578B2 (ja) * 2011-02-03 2016-06-22 ニッタ・ハース株式会社 研磨用組成物およびそれを用いた研磨方法
SG11201405091TA (en) * 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP5822356B2 (ja) * 2012-04-17 2015-11-24 花王株式会社 シリコンウェーハ用研磨液組成物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663781B1 (ko) * 2003-01-31 2007-01-02 히다치 가세고교 가부시끼가이샤 Cμρ연마제 및 연마방법

Also Published As

Publication number Publication date
EP3007213A4 (en) 2017-02-22
US20170253767A1 (en) 2017-09-07
CN105264647B (zh) 2018-01-09
TWI650410B (zh) 2019-02-11
CN105264647A (zh) 2016-01-20
JP6037416B2 (ja) 2016-12-07
JP2016201557A (ja) 2016-12-01
US20160122591A1 (en) 2016-05-05
JP6360108B2 (ja) 2018-07-18
JPWO2014196299A1 (ja) 2017-02-23
SG11201508398TA (en) 2015-11-27
EP3007213B1 (en) 2020-03-18
US10745588B2 (en) 2020-08-18
EP3007213A1 (en) 2016-04-13
KR20160013896A (ko) 2016-02-05
WO2014196299A1 (ja) 2014-12-11
TW201510197A (zh) 2015-03-16

Similar Documents

Publication Publication Date Title
KR102239045B1 (ko) 실리콘 웨이퍼 연마용 조성물
JP5890583B2 (ja) 研磨用組成物および研磨物製造方法
JP6387032B2 (ja) 研磨用組成物、研磨用組成物製造方法および研磨物製造方法
KR102397821B1 (ko) 실리콘 웨이퍼 연마용 조성물
JP6259723B2 (ja) シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット
JP5920840B2 (ja) 研磨用組成物およびその製造方法
JP6255287B2 (ja) 研磨方法およびそれに用いられる研磨用組成物
KR101732331B1 (ko) 실리콘 웨이퍼 연마용 조성물
KR101753022B1 (ko) 실리콘 웨이퍼 연마용 조성물

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000