SG11201508398TA - Silicon wafer polishing composition - Google Patents

Silicon wafer polishing composition

Info

Publication number
SG11201508398TA
SG11201508398TA SG11201508398TA SG11201508398TA SG11201508398TA SG 11201508398T A SG11201508398T A SG 11201508398TA SG 11201508398T A SG11201508398T A SG 11201508398TA SG 11201508398T A SG11201508398T A SG 11201508398TA SG 11201508398T A SG11201508398T A SG 11201508398TA
Authority
SG
Singapore
Prior art keywords
silicon wafer
polishing composition
wafer polishing
composition
silicon
Prior art date
Application number
SG11201508398TA
Other languages
English (en)
Inventor
Kohsuke Tsuchiya
Hisanori Tansho
Taiki Ichitsubo
Yoshio Mori
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201508398TA publication Critical patent/SG11201508398TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
SG11201508398TA 2013-06-07 2014-05-02 Silicon wafer polishing composition SG11201508398TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013120328 2013-06-07
JP2014010836 2014-01-23
PCT/JP2014/062176 WO2014196299A1 (ja) 2013-06-07 2014-05-02 シリコンウエハ研磨用組成物

Publications (1)

Publication Number Publication Date
SG11201508398TA true SG11201508398TA (en) 2015-11-27

Family

ID=52007952

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201508398TA SG11201508398TA (en) 2013-06-07 2014-05-02 Silicon wafer polishing composition

Country Status (8)

Country Link
US (2) US20160122591A1 (enExample)
EP (1) EP3007213B1 (enExample)
JP (2) JP6037416B2 (enExample)
KR (1) KR102239045B1 (enExample)
CN (1) CN105264647B (enExample)
SG (1) SG11201508398TA (enExample)
TW (1) TWI650410B (enExample)
WO (1) WO2014196299A1 (enExample)

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JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
KR102520942B1 (ko) * 2015-02-12 2023-04-13 가부시키가이샤 후지미인코퍼레이티드 실리콘 웨이퍼의 연마 방법 및 표면 처리 조성물
US10748778B2 (en) 2015-02-12 2020-08-18 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
CN107735471B (zh) * 2015-07-10 2021-02-12 费罗公司 用于抛光有机聚合物基眼用基材的浆液组合物和添加剂以及方法
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
WO2017150118A1 (ja) * 2016-02-29 2017-09-08 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
SG11201901590SA (en) * 2016-09-21 2019-03-28 Fujimi Inc Composition for surface treatment
WO2018180479A1 (ja) * 2017-03-31 2018-10-04 株式会社フジミインコーポレーテッド 研磨用組成物
JP6916039B2 (ja) * 2017-06-05 2021-08-11 Ａｔシリカ株式会社 研磨用組成物
KR102685348B1 (ko) 2017-11-06 2024-07-17 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 그의 제조 방법
JP7353051B2 (ja) * 2019-03-26 2023-09-29 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP7356248B2 (ja) * 2019-03-28 2023-10-04 株式会社フジミインコーポレーテッド リンス用組成物およびリンス方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JP7512035B2 (ja) * 2019-12-24 2024-07-08 ニッタ・デュポン株式会社 研磨用組成物
US20230143074A1 (en) * 2020-03-13 2023-05-11 Fujimi Incorporated Polishing composition and polishing method
JP7752601B2 (ja) * 2020-03-13 2025-10-10 株式会社フジミインコーポレーテッド 研磨用組成物
JP7562453B2 (ja) 2021-03-12 2024-10-07 キオクシア株式会社 研磨液、研磨装置、及び研磨方法
JP7821204B2 (ja) * 2021-06-14 2026-02-26 インテグリス・インコーポレーテッド 硬質基板の研削
KR20240167843A (ko) 2022-03-23 2024-11-28 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JPWO2024195575A1 (enExample) * 2023-03-20 2024-09-26
WO2024263357A1 (en) * 2023-06-21 2024-12-26 Corning Incorporated Coated articles, methods of polishing, and methods of making the same
TW202540372A (zh) * 2023-11-28 2025-10-16 日商大阪有機化學工業股份有限公司 研磨組合物

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KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
KR20010046395A (ko) * 1999-11-12 2001-06-15 안복현 연마용 조성물
WO2004068570A1 (ja) * 2003-01-31 2004-08-12 Hitachi Chemical Co., Ltd. Cmp研磨剤及び研磨方法
EP1870928A4 (en) * 2005-04-14 2009-01-21 Showa Denko Kk POLISH
CN102965025B (zh) 2005-11-11 2014-10-29 日立化成株式会社 氧化硅用研磨剂、其用途以及研磨方法
TWI437083B (zh) * 2006-07-28 2014-05-11 昭和電工股份有限公司 研磨組成物
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2008181955A (ja) * 2007-01-23 2008-08-07 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
KR101564673B1 (ko) * 2008-02-01 2015-10-30 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
WO2009104517A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US8652350B2 (en) * 2008-02-27 2014-02-18 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion
TWI546373B (zh) * 2008-04-23 2016-08-21 日立化成股份有限公司 研磨劑及其製造方法、基板研磨方法以及研磨劑套組及其製造方法
WO2010122985A1 (ja) * 2009-04-20 2010-10-28 日立化成工業株式会社 半導体基板用研磨液及び半導体基板の研磨方法
SG177270A1 (en) 2009-07-15 2012-02-28 Lam Res Corp Materials and systems for advanced substrate cleaning
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
JP4772156B1 (ja) 2010-07-05 2011-09-14 花王株式会社 シリコンウエハ用研磨液組成物
JP5939578B2 (ja) * 2011-02-03 2016-06-22 ニッタ・ハース株式会社 研磨用組成物およびそれを用いた研磨方法
SG11201405091TA (en) * 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP5822356B2 (ja) * 2012-04-17 2015-11-24 花王株式会社 シリコンウェーハ用研磨液組成物

Also Published As

Publication number Publication date
EP3007213A4 (en) 2017-02-22
US20170253767A1 (en) 2017-09-07
CN105264647B (zh) 2018-01-09
KR102239045B1 (ko) 2021-04-12
TWI650410B (zh) 2019-02-11
CN105264647A (zh) 2016-01-20
JP6037416B2 (ja) 2016-12-07
JP2016201557A (ja) 2016-12-01
US20160122591A1 (en) 2016-05-05
JP6360108B2 (ja) 2018-07-18
JPWO2014196299A1 (ja) 2017-02-23
EP3007213B1 (en) 2020-03-18
US10745588B2 (en) 2020-08-18
EP3007213A1 (en) 2016-04-13
KR20160013896A (ko) 2016-02-05
WO2014196299A1 (ja) 2014-12-11
TW201510197A (zh) 2015-03-16

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