SG11201508398TA - Silicon wafer polishing composition - Google Patents

Silicon wafer polishing composition

Info

Publication number
SG11201508398TA
SG11201508398TA SG11201508398TA SG11201508398TA SG11201508398TA SG 11201508398T A SG11201508398T A SG 11201508398TA SG 11201508398T A SG11201508398T A SG 11201508398TA SG 11201508398T A SG11201508398T A SG 11201508398TA SG 11201508398T A SG11201508398T A SG 11201508398TA
Authority
SG
Singapore
Prior art keywords
silicon wafer
polishing composition
wafer polishing
composition
silicon
Prior art date
Application number
SG11201508398TA
Other languages
English (en)
Inventor
Kohsuke Tsuchiya
Hisanori Tansho
Taiki Ichitsubo
Yoshio Mori
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201508398TA publication Critical patent/SG11201508398TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
SG11201508398TA 2013-06-07 2014-05-02 Silicon wafer polishing composition SG11201508398TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013120328 2013-06-07
JP2014010836 2014-01-23
PCT/JP2014/062176 WO2014196299A1 (ja) 2013-06-07 2014-05-02 シリコンウエハ研磨用組成物

Publications (1)

Publication Number Publication Date
SG11201508398TA true SG11201508398TA (en) 2015-11-27

Family

ID=52007952

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201508398TA SG11201508398TA (en) 2013-06-07 2014-05-02 Silicon wafer polishing composition

Country Status (8)

Country Link
US (2) US20160122591A1 (enExample)
EP (1) EP3007213B1 (enExample)
JP (2) JP6037416B2 (enExample)
KR (1) KR102239045B1 (enExample)
CN (1) CN105264647B (enExample)
SG (1) SG11201508398TA (enExample)
TW (1) TWI650410B (enExample)
WO (1) WO2014196299A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
US20180030313A1 (en) * 2015-02-12 2018-02-01 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
US10748778B2 (en) 2015-02-12 2020-08-18 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
JP6654696B2 (ja) * 2015-07-10 2020-02-26 フエロ コーポレーション 有機ポリマー系眼用基材を研磨するためのスラリー組成物及び方法、並びに眼用レンズ
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
EP3425016B1 (en) * 2016-02-29 2021-01-27 Fujimi Incorporated Polishing composition and polishing method using same
JP6880047B2 (ja) * 2016-09-21 2021-06-02 株式会社フジミインコーポレーテッド 表面処理組成物
CN110462797B (zh) * 2017-03-31 2023-09-22 福吉米株式会社 研磨用组合物
JP6916039B2 (ja) * 2017-06-05 2021-08-11 Ａｔシリカ株式会社 研磨用組成物
KR102685348B1 (ko) 2017-11-06 2024-07-17 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 그의 제조 방법
JP7353051B2 (ja) * 2019-03-26 2023-09-29 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP7356248B2 (ja) * 2019-03-28 2023-10-04 株式会社フジミインコーポレーテッド リンス用組成物およびリンス方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JP7512035B2 (ja) * 2019-12-24 2024-07-08 ニッタ・デュポン株式会社 研磨用組成物
JP7752601B2 (ja) * 2020-03-13 2025-10-10 株式会社フジミインコーポレーテッド 研磨用組成物
JP7741793B2 (ja) * 2020-03-13 2025-09-18 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP7562453B2 (ja) 2021-03-12 2024-10-07 キオクシア株式会社 研磨液、研磨装置、及び研磨方法
JP7821204B2 (ja) * 2021-06-14 2026-02-26 インテグリス・インコーポレーテッド 硬質基板の研削
KR20240167843A (ko) 2022-03-23 2024-11-28 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
WO2024195575A1 (ja) * 2023-03-20 2024-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
WO2024263357A1 (en) * 2023-06-21 2024-12-26 Corning Incorporated Coated articles, methods of polishing, and methods of making the same
WO2025115883A1 (ja) * 2023-11-28 2025-06-05 大阪有機化学工業株式会社 研磨組成物
WO2026083982A1 (ja) * 2024-10-16 2026-04-23 大阪有機化学工業株式会社 研磨組成物および共重合体

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
KR20010046395A (ko) * 1999-11-12 2001-06-15 안복현 연마용 조성물
US7838482B2 (en) * 2003-01-31 2010-11-23 Hitachi Chemical Co. Ltd. CMP polishing compound and polishing method
TWI361218B (en) * 2005-04-14 2012-04-01 Showa Denko Kk Polishing composition
EP1956642A4 (en) 2005-11-11 2011-04-06 Hitachi Chemical Co Ltd POLISHING AGENT FOR SILICONE OXIDE, LIQUID ADDITIVE AND POLISHING PROCESS
TWI437083B (zh) * 2006-07-28 2014-05-11 昭和電工股份有限公司 研磨組成物
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2008181955A (ja) * 2007-01-23 2008-08-07 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
EP2237311A4 (en) * 2008-02-01 2011-11-30 Fujimi Inc POLISHING COMPOSITION AND POLISHING METHOD THEREFOR
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
WO2009107472A1 (ja) * 2008-02-27 2009-09-03 Jsr株式会社 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、化学機械研磨用水系分散体の再生方法
CN107199502A (zh) * 2008-04-23 2017-09-26 日立化成株式会社 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法
WO2010122985A1 (ja) * 2009-04-20 2010-10-28 日立化成工業株式会社 半導体基板用研磨液及び半導体基板の研磨方法
SG177270A1 (en) 2009-07-15 2012-02-28 Lam Res Corp Materials and systems for advanced substrate cleaning
US9536752B2 (en) * 2009-11-11 2017-01-03 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and polishing method for substrate using same
JP4772156B1 (ja) 2010-07-05 2011-09-14 花王株式会社 シリコンウエハ用研磨液組成物
US20140030897A1 (en) * 2011-02-03 2014-01-30 Sumco Corporation Polishing composition and polishing method using the same
CN104137232A (zh) * 2012-02-21 2014-11-05 日立化成株式会社 研磨剂、研磨剂组和基体的研磨方法
JP5822356B2 (ja) 2012-04-17 2015-11-24 花王株式会社 シリコンウェーハ用研磨液組成物

Also Published As

Publication number Publication date
JP6360108B2 (ja) 2018-07-18
JP2016201557A (ja) 2016-12-01
TWI650410B (zh) 2019-02-11
US20170253767A1 (en) 2017-09-07
KR20160013896A (ko) 2016-02-05
WO2014196299A1 (ja) 2014-12-11
EP3007213A1 (en) 2016-04-13
US20160122591A1 (en) 2016-05-05
CN105264647B (zh) 2018-01-09
KR102239045B1 (ko) 2021-04-12
EP3007213B1 (en) 2020-03-18
CN105264647A (zh) 2016-01-20
TW201510197A (zh) 2015-03-16
JPWO2014196299A1 (ja) 2017-02-23
US10745588B2 (en) 2020-08-18
JP6037416B2 (ja) 2016-12-07
EP3007213A4 (en) 2017-02-22

Similar Documents

Publication Publication Date Title
EP3007213A4 (en) Composition for silicon wafer polishing
EP3062337A4 (en) Polishing liquid composition for silicon wafers
SG10201406877WA (en) Method for chemical mechanical polishing silicon wafers
SG11201609077VA (en) Composition for polishing silicon wafers
ZA201604565B (en) Abrasive cleaning composition
TWI563660B (en) Semiconductor device
SG11201407916RA (en) Polishing solution composition for wafers
SG11201604650SA (en) Semiconductor device
SG10201601511RA (en) Semiconductor device
EP3055376A4 (en) Mixed abrasive polishing compositions
GB201506501D0 (en) Semiconductor device
LT2891637T (lt) Monokristalinio silicio substrato tekstūravimo priedas ir jo panaudojimas
GB2514918B (en) Nitride semiconductor substrate
SG11201601941SA (en) Polishing composition
SG11201704360UA (en) Method for polishing silicon wafer
GB201510735D0 (en) Semiconductor device
SG10201704400YA (en) Doping media for the local doping of silicon wafers
SG11201601847WA (en) Polishing composition
SG11201603049WA (en) Semiconductor device fabrication
EP3010037A4 (en) Silicon carbide semiconductor device manufacturing method
SG11201505900XA (en) Polishing pad
EP3096348A4 (en) Wafer grinding device
SG11201505490RA (en) Surface selective polishing compositions
SG11201705202PA (en) Polishing solution composition for silicon oxide film polishing
SG11201603413PA (en) Semiconductor device