SG11201407916RA - Polishing solution composition for wafers - Google Patents
Polishing solution composition for wafersInfo
- Publication number
- SG11201407916RA SG11201407916RA SG11201407916RA SG11201407916RA SG11201407916RA SG 11201407916R A SG11201407916R A SG 11201407916RA SG 11201407916R A SG11201407916R A SG 11201407916RA SG 11201407916R A SG11201407916R A SG 11201407916RA SG 11201407916R A SG11201407916R A SG 11201407916RA
- Authority
- SG
- Singapore
- Prior art keywords
- wafers
- solution composition
- polishing solution
- polishing
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012120037 | 2012-05-25 | ||
| PCT/JP2013/064068 WO2013176122A1 (en) | 2012-05-25 | 2013-05-21 | Polishing solution composition for wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201407916RA true SG11201407916RA (en) | 2015-03-30 |
Family
ID=49623811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201407916RA SG11201407916RA (en) | 2012-05-25 | 2013-05-21 | Polishing solution composition for wafers |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9133366B2 (en) |
| EP (1) | EP2858096B1 (en) |
| JP (1) | JP6028942B2 (en) |
| KR (1) | KR102123906B1 (en) |
| CN (1) | CN104321850B (en) |
| MY (1) | MY171383A (en) |
| SG (1) | SG11201407916RA (en) |
| TW (1) | TWI557219B (en) |
| WO (1) | WO2013176122A1 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201507438YA (en) | 2013-03-19 | 2015-10-29 | Fujimi Inc | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
| US10717899B2 (en) | 2013-03-19 | 2020-07-21 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
| JP5857310B2 (en) | 2013-09-30 | 2016-02-10 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing the same |
| JP6246638B2 (en) * | 2014-03-24 | 2017-12-13 | 株式会社フジミインコーポレーテッド | Polishing method and polishing composition used therefor |
| JP6506913B2 (en) * | 2014-03-31 | 2019-04-24 | ニッタ・ハース株式会社 | Polishing composition and polishing method |
| JP6559936B2 (en) * | 2014-09-05 | 2019-08-14 | 日本キャボット・マイクロエレクトロニクス株式会社 | Slurry composition, rinse composition, substrate polishing method and rinse method |
| JP6356164B2 (en) * | 2016-01-15 | 2018-07-11 | 関西ペイント株式会社 | Conductive paste for lithium ion battery positive electrode and composite paste for lithium ion battery positive electrode |
| KR102286318B1 (en) * | 2016-03-30 | 2021-08-06 | 가부시키가이샤 후지미인코퍼레이티드 | A surface treatment composition, a method for producing a surface treatment composition, a method for surface treatment, and a method for producing a semiconductor substrate |
| KR102508181B1 (en) * | 2016-12-28 | 2023-03-09 | 니타 듀퐁 가부시키가이샤 | Polishing composition and polishing method |
| JP7450532B2 (en) * | 2018-03-30 | 2024-03-15 | 株式会社フジミインコーポレーテッド | polishing composition |
| JP7361467B2 (en) * | 2018-12-25 | 2023-10-16 | ニッタ・デュポン株式会社 | polishing composition |
| US11702570B2 (en) * | 2019-03-27 | 2023-07-18 | Fujimi Incorporated | Polishing composition |
| JP7267893B2 (en) * | 2019-03-27 | 2023-05-02 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP7433042B2 (en) * | 2019-12-24 | 2024-02-19 | ニッタ・デュポン株式会社 | polishing composition |
| CN115895451A (en) * | 2021-09-30 | 2023-04-04 | 昆山欣谷微电子材料有限公司 | Alkaline polishing solution composition for preparing hydrophilic surface silicon wafer |
| KR102684678B1 (en) * | 2021-10-14 | 2024-07-15 | 닛산 가가쿠 가부시키가이샤 | Post-polishing composition used after primary polishing of silicon wafers |
| CN115662877B (en) * | 2022-09-08 | 2023-08-04 | 东海县太阳光新能源有限公司 | Monocrystalline silicon surface cleaning method |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11140427A (en) * | 1997-11-13 | 1999-05-25 | Kobe Steel Ltd | Polishing liquid and polishing |
| JP4462593B2 (en) * | 2001-07-26 | 2010-05-12 | 花王株式会社 | Polishing liquid composition |
| CN100378145C (en) | 2001-06-21 | 2008-04-02 | 花王株式会社 | Grinding liquid composition |
| JP4593064B2 (en) * | 2002-09-30 | 2010-12-08 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method using the same |
| US7553345B2 (en) | 2002-12-26 | 2009-06-30 | Kao Corporation | Polishing composition |
| JP4076853B2 (en) * | 2002-12-26 | 2008-04-16 | 花王株式会社 | Polishing liquid composition |
| JP2005097445A (en) * | 2003-09-25 | 2005-04-14 | Yasuhiro Tani | Carrier particle for abrasive, abrasive and polishing method |
| JP2005268665A (en) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | Polishing composition |
| US7052373B1 (en) * | 2005-01-19 | 2006-05-30 | Anji Microelectronics Co., Ltd. | Systems and slurries for chemical mechanical polishing |
| JP4472747B2 (en) * | 2005-01-26 | 2010-06-02 | エルジー・ケム・リミテッド | Cerium oxide abrasive and polishing slurry |
| US7368388B2 (en) * | 2005-04-15 | 2008-05-06 | Small Robert J | Cerium oxide abrasives for chemical mechanical polishing |
| JP5335183B2 (en) * | 2006-08-24 | 2013-11-06 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method |
| KR101184731B1 (en) * | 2008-03-20 | 2012-09-20 | 주식회사 엘지화학 | Method for preparing cerium oxide, cerium oxide prepared therefrom and cmp slurry comprising the same |
| JP5575735B2 (en) * | 2008-07-03 | 2014-08-20 | 株式会社フジミインコーポレーテッド | Polishing composition concentrate |
| JP5474400B2 (en) * | 2008-07-03 | 2014-04-16 | 株式会社フジミインコーポレーテッド | Semiconductor wetting agent, polishing composition and polishing method using the same |
| WO2010086893A1 (en) * | 2009-01-27 | 2010-08-05 | 三洋化成工業株式会社 | Cleaning agent for copper-wired semiconductor |
| KR101172647B1 (en) * | 2009-10-22 | 2012-08-08 | 히다치 가세고교 가부시끼가이샤 | Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate |
| KR101075966B1 (en) * | 2010-03-09 | 2011-10-21 | 주식회사 엘지화학 | Crystalline cerium oxide and preparation method of the same |
| KR101443468B1 (en) * | 2010-03-12 | 2014-09-22 | 히타치가세이가부시끼가이샤 | Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same |
| DE112011103232T5 (en) * | 2010-09-27 | 2013-06-27 | Fujimi Incorporated | Surface treatment composition and surface treatment method using the same |
| JP2012079964A (en) * | 2010-10-04 | 2012-04-19 | Nissan Chem Ind Ltd | Polishing liquid composition for semiconductor wafer |
| SG11201407087XA (en) * | 2012-05-22 | 2014-12-30 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| US9932497B2 (en) * | 2012-05-22 | 2018-04-03 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
-
2013
- 2013-05-21 KR KR1020147031215A patent/KR102123906B1/en active IP Right Grant
- 2013-05-21 WO PCT/JP2013/064068 patent/WO2013176122A1/en active Application Filing
- 2013-05-21 US US14/402,184 patent/US9133366B2/en active Active
- 2013-05-21 SG SG11201407916RA patent/SG11201407916RA/en unknown
- 2013-05-21 MY MYPI2014703462A patent/MY171383A/en unknown
- 2013-05-21 EP EP13793117.6A patent/EP2858096B1/en active Active
- 2013-05-21 CN CN201380026118.5A patent/CN104321850B/en active Active
- 2013-05-21 JP JP2014516802A patent/JP6028942B2/en active Active
- 2013-05-24 TW TW102118408A patent/TWI557219B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2858096A4 (en) | 2016-03-09 |
| KR102123906B1 (en) | 2020-06-17 |
| EP2858096A1 (en) | 2015-04-08 |
| US9133366B2 (en) | 2015-09-15 |
| CN104321850A (en) | 2015-01-28 |
| JPWO2013176122A1 (en) | 2016-01-14 |
| TW201412960A (en) | 2014-04-01 |
| CN104321850B (en) | 2016-11-23 |
| TWI557219B (en) | 2016-11-11 |
| KR20150020265A (en) | 2015-02-25 |
| MY171383A (en) | 2019-10-10 |
| EP2858096B1 (en) | 2017-01-11 |
| WO2013176122A1 (en) | 2013-11-28 |
| US20150123027A1 (en) | 2015-05-07 |
| JP6028942B2 (en) | 2016-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11201407916RA (en) | Polishing solution composition for wafers | |
| SG11201502768UA (en) | Polishing composition | |
| SG11201503355WA (en) | Polishing composition | |
| EP2840591A4 (en) | Composition for silicon wafer polishing liquid | |
| SG11201403552SA (en) | Polishing composition | |
| SG10201604609WA (en) | Polishing Composition | |
| EP2742526A4 (en) | Wafer carrier | |
| SG11201503751TA (en) | Polishing composition | |
| SG11201505037VA (en) | Polishing composition | |
| SG11201405708VA (en) | Polishing method | |
| GB2510468B (en) | Substrates for semiconductor devices | |
| GB201118868D0 (en) | Semiconductor compounds | |
| SG11201502766QA (en) | Polishing composition | |
| SG11201501849RA (en) | Polishing composition | |
| HK1208173A1 (en) | Bromocriptine formulations | |
| HK1210709A1 (en) | Composition for external use | |
| EP2777878A4 (en) | Polishing composition | |
| EP2915859A4 (en) | Polishing composition | |
| HK1251161A1 (en) | Composition for preventing headaches | |
| SG10201508894WA (en) | Keyed wafer carrier | |
| PL2726238T3 (en) | Chuck | |
| GB2510248B (en) | Substrates for semiconductor devices | |
| EP2743968A4 (en) | Composition for polishing compound semiconductor | |
| ZA201406203B (en) | Adjuvant compositions | |
| SG11201402486TA (en) | Polishing composition |