CN105247010A - 无溶剂的量子点交换方法 - Google Patents
无溶剂的量子点交换方法 Download PDFInfo
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- CN105247010A CN105247010A CN201480022380.7A CN201480022380A CN105247010A CN 105247010 A CN105247010 A CN 105247010A CN 201480022380 A CN201480022380 A CN 201480022380A CN 105247010 A CN105247010 A CN 105247010A
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- quantum dot
- siloxane polymer
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- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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Abstract
本发明描述了使用具有键合配体的硅氧烷聚合物,所述键合配体将取代量子点材料上的键合配体,无溶剂的配体交换方法。
Description
相关申请的交叉参考
本申请要求2013年3月14日提交的美国临时申请No.61/781,285的优先权,在此为了所有目的,通过参考将其全文引入。
发明背景
高性能下变频磷光体技术将在下一代的可见光发射中起到突出的作用,其中包括高效率固态白光照明(SSWL)。此外,这样的技术还适用于近红外(NIR)和红外(IR)发光技术。从紫外(UV)或蓝色发光半导体发光二极管(LED)下变频为蓝色、红色和绿色波长提供了用于传输商业上有吸引力的白色光源的快速、有效和成本合算的途径。不幸的是,现有的稀土活化的磷光体或卤代磷酸盐是目前用于固态下变频的主要来源,其最初被开发用于荧光灯和阴极射线管(CRT),因此当谈到SSWL的独特要求时,其具有许多关键的不足。正因为如此,虽然一些SSWL系统是可用的,但差的功率效率(<20光流明/瓦特(lm/W))、差的显色性(显色指数(CRI)<75)和极高的成本(>$200/千流明(klm))将该技术限制在小摊贩市场,如手电筒和人行道照明。
此外,由于在芯片/涂层界面处的光子的内反射,LED通常遭受降低的性能。典型地,LED被封装或涂布在聚合物材料中(其可以包含磷光体)以向发光芯片提供稳定性。目前这些涂层通过使用具有非常不同于基材(即,芯片)的折射率的无机或有机涂层制成,其由于在两种材料之间的界面处的折射率失配而导致有害的光学效应。此外,LED的温度可以超过100℃。为了允许可以伴随该温度上升的膨胀和收缩,柔性聚合物层(例如硅酮)通常与芯片接触放置。为了向LED提供另外的稳定性,该柔性层通常另外涂布有硬壳聚合物。
由于与LED相关的聚合物涂层的更低的折射率,所得LED结构在芯片/柔性聚合物界面处遭受光损失。然而,如果柔性层的折射率升高,那么由于内反射,在柔性聚合物和硬壳聚合物之间的高折射率/低折射率界面处将发生甚至更高的损失。
当使用常规的无机磷光体用于SSWL时,有若干关键因素导致差的功率效率。这些包括:在LED芯片和磷光体层界面处的总的内反射导致差的从LED到磷光体层的光摄取;由于磷光体颗粒产生的光散射以及LED芯片的寄生吸收、金属接触和屏蔽导致的从磷光体层到周围的差的摄取效率;在红光波长范围内的宽的磷光体发射导致未使用的光子发射到近IR;以及当在蓝光波长范围内激发时磷光体自身的差的下变频效率(这是吸收和发射效率的组合)。虽然效率通过UV激发改进,但是由于在UV中比在蓝光波长范围中的斯托克斯位移发射(Stokes-shiftedemission)更大且LED效率更低导致的另外的损失使其在整体上是不太吸引人的解决方案。
结果,差的效率驱动高效的拥有成本。成本还显著地受到构建这样的装置的费力的制造和组装过程的影响,例如在封装过程中将磷光体层异构集成到LED芯片上(美国能源部和光电产业发展协会(DOEandOptoelectronicsIndustryDevelopmentAssociation)"Lightemittingdiodes(LEDs)forgeneralillumination,"TechnologyRoadmap(2002))。在历史上,蓝色LED已与多种带边滤波器和磷光体联合使用来产生白光。然而,许多当前的滤波器允许光子从光谱的蓝端发射,从而限制了白色LED的质量。由于能够同时在蓝光中激发的可用磷光体颜色和颜色组合的数量有限,因此装置的性能还遭受差的显色性。因此,需要有效的纳米复合材料滤波器,可以调整所述滤波器以滤除在可见光(尤其是蓝端)、紫外和近红外光谱中的特定光子发射。
虽然针对SSWL的有机磷光体已取得了一些进展,但是有机材料具有若干不能克服的缺点,使其不可能成为针对高效SSWL的可行的解决方案。这些包括:快速光降解导致差的寿命,尤其在蓝光和近UV光的存在下;低的吸收效率;光散射、在芯片界面处的差的折射率匹配、对不同颜色的磷光体窄的和非重叠的吸收光谱使其难以或不可能同时激发多种颜色;和宽的发射光谱。因此需要聚合物层的简单制备方法,所述聚合物层帮助产生高质量、高强度的白光。令人惊讶地,本发明满足了该需求和其他需求。
发明简述
在一个实施方案中,本发明提供用第二配体替代量子点上的第一配体的方法,该方法包括混合反应混合物,所述反应混合物包括具有非共价键合到量子点上的第一配体的多个量子点,和具有第二配体的硅氧烷聚合物,使得第二配体替代第一配体并且非共价键合到量子点上,其中该反应混合物基本上不含溶剂,由此不要求溶剂除去步骤,和其中硅氧烷聚合物的Tg小于约100℃,和粘度小于约1000cSt,从而用第二配体替代量子点上的第一配体。
附图简述
图1示出了实施例3的纳米晶体膜的归一化功率(样品蓝)vs时间的图表。
发明详述
I.概述
本发明提供用改进纳米晶体的溶解度和加工容易程度的配体交换在合成纳米晶体中所使用的纳米晶体配体的简单方法。在先的配体交换方法利用溶剂,例如甲苯,所述溶剂必须被除去。本发明的方法最小化溶剂用量,从而避免费力的溶剂除去步骤。本发明使用具有连接到硅氧烷聚合物上的合适的结合基团的低粘度硅氧烷聚合物替代溶剂。低粘度硅氧烷聚合物和剧烈混合的组合允许在不需要溶剂的情况下发生配体交换。
II.定义
“配体”是指稳定并增溶本发明量子点的部分。代表性配体是具有非-共价键合到量子点上的胺,羧基或硫醇基的那些。
"胺"是指-N(R)2基,其中R基尤其可以是氢,烷基,链烯基,炔基,环烷基,杂环烷基,芳基或杂芳基。R基团可以是相同或不同的。氨基可以是伯氨基(每一R是氢),仲氨基(一个R是氢),或叔氨基(每一R不是氢)。
"硫醇"是指–SH基。
"羧基"是指化学式为-C(O)OH或-CO2H的羧酸基。可将羧基连接到任何合适的基团,例如烷基上,形成羧烷基。
"膦"是指化学式为-PR3的基团,其中R基可以是任何合适的基团,例如氢,烷基或芳基。膦也可以被氧化,形成化学式为-P(=O)R2的氧化膦,其中R基可以是任何合适的基团,例如氢,烷基或芳基。
"量子点"或"纳米晶体"是指基本上为单晶的纳米结构。纳米晶体具有至少一个尺寸小于约500nm的区域或特征尺寸,并低至近似小于约1nm的数量级。如本文所使用,当提及任何数值时,“约”是指规定值的±10%的值(例如,约100nm包括90nm至110nm的尺寸范围,包含90nm和110nm)。术语“纳米晶体”、“量子点”、“纳米点”和“点”可容易地被普通技术人员理解并描绘类似结构,并且在本文中互换使用。本发明还包括使用多晶或无定形纳米晶体。
"非-共价键合"是指两个实体通过非-共价键,例如离子键,氢键键合,疏水相互作用或者范德华力键合在一起。
"混合反应混合物"是指混合至少两种不同物种的方法,使得它们可反应,从而或者改性起始反应物之一或者形成第三不同的物种,一种产物。然而,应当理解,所得反应产物可以直接由所添加的试剂之间反应或者由来自一种或多种添加的试剂的中间体生产,所述中间体可在该反应混合物中产生。
“硅氧烷聚合物”或“聚硅氧烷”是指具有式-Si(R2)O-的单体重复单元的聚合物。硅氧烷聚合物的R基团可以是相同或不同的,并且可以为任何合适的基团,其中包括但不限于,氢,烷基,杂烷基,烷基胺,羧烷基,链烯基,炔基,环烷基,杂环烷基,芳基和杂芳基。当两个R基团均不为氢时,该硅氧烷聚合物可以称为“硅酮”。硅氧烷聚合物可以是直链的、支链的或环状的。硅氧烷聚合物可以包含单一类型的单体重复单元,从而形成均聚物。备选地,硅氧烷聚合物可以包含两种或更多种类型的单体重复单元,以形成共聚物,所述共聚物可以是无规共聚物或嵌段共聚物。
硅氧烷聚合物的一个实施方案是GenesseePolymers988(GP-988),一种商购于GeneseePolymersofBurton,Michigan的聚合物。GP-988是一种无规共聚物,其中一个单体包括烷基胺基:
"玻璃化转变温度"或"Tg"是指无定形固体从固体、玻璃态转变为更多地液态时的温度。
"粘度"是指流体变形的阻力。粘度尤其可定义为剪切粘度,动态粘度,运动粘度或本体粘度。代表性的单位包括,但不限于,帕-秒(Pa·s,其中帕相当于N·s/m2或kg·(m·s)-1)或泊(P)(它相当于0.1Pa·s),和沲(St)(它相当于1cm2·s-1(在20℃下的运动粘度为约1cSt)。还常常使用厘沲(cSt),且相当于1mm2·s-1。可用于本发明的硅氧烷聚合物的粘度可以小于约1000cSt。GP-988的粘度为约250cSt。
“烷基”是指具有规定数量的碳原子的直链或支链的饱和脂肪族基团。烷基可以包括任何数量的碳,如C1-2、C1-3、C1-4、C1-5、C1-6、C1-7、C1-8、C1-9、C1-10、C1-12、C1-14、C1-16、C1-18、C1-20,C8-20、C12-20、C14-20、C16-20和C18-20。例如,C1-6烷基包括但不限于,甲基、乙基、丙基、异丙基、丁基、异丁基、仲丁基、叔丁基、戊基、异戊基、己基等。其他烷基包括辛烷基、壬烷基、癸烷基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、十九烷基和二十烷基。烷基可以是取代或未取代的。
“杂烷基”是指任何合适长度的并具有1至5个杂原子如N、O和S的烷基。额外的杂原子也可以是有用的,其中包括但不限于,B、Al、Si和P。杂原子还可以是氧化的,例如但不限于-S(O)-和-S(O)2-。例如,杂烷基可以包括醚(亚乙基氧基和聚(亚乙基氧基))、硫醚和烷基胺。杂烷基的杂原子部分可以替代烷基的氢,以形成羟基、巯基或氨基。备选地,杂原子部分可以是连接原子,或插入两个碳原子之间。
“烷基胺”是指连接于如上所述的烷基并且一般地具有式-C1-8烷基-NR2的胺。所述烷基胺基的烷基部分连接到本发明的硅氧烷聚合物上。任何合适的烷基链都是有用的。连接到氮原子上的R基可以是任何合适的基团,其中包括氢和烷基。此外,R基团可以是相同或不同的。烷基胺也可包括长链烷基,其中该烷基可以是C8-20。
“羧烷基”是指连接到如上所述的烷基上并且一般地具有式-C1-8烷基-C(O)OH的羧基。该羧烷基的烷基部分连接到本发明的硅氧烷聚合物上。任何合适的烷基链都是有用的。羧烷基也可包括脂肪酸,其中烷基可以是8-30个碳原子。可用于本发明的脂肪酸的实例包括,但不限于,辛酸(C8),癸酸(C10),月桂酸(C12),肉豆蔻酸(C14),棕榈酸(C16),棕榈油酸(C16),硬脂酸(C18),异硬脂酸(C18),油酸(C18),异油酸(C18),亚油酸(C18),α-亚油酸(C18),γ-亚麻酸(C18),花生酸(C20),鳕油酸(C20),花生四烯酸(C20),十二碳五烯酸(C20),二十二烷酸(C22),芥酸(C22),二十二碳六烯酸(C22),二十四烷酸(C24)和二十六烷酸(C26)。
“链烯基”是指具有至少2个碳原子和至少一个双键的直链或支链烃。链烯基可以包括任何数量的碳,如C2、C2-3、C2-4、C2-5、C2-6、C2-7、C2-8、C2-9、C2-10、C2-12、C2-14、C2-16、C2-18、C2-20,C8-20、C12-20、C14-20、C16-20和C18-20。链烯基可以具有任何适合数量的双键,其中包括但不限于,1、2、3、4、5个或更多个。链烯基的实例包括但不限于,乙烯基(vinyl)(乙烯基(ethenyl))、丙烯基、异丙烯基、1-丁烯基、2-丁烯基、异丁烯基、丁二烯基、1-戊烯基、2-戊烯基、异戊烯基、1,3-戊二烯基、1,4-戊二烯基、1-己烯基、2-己烯基、3-己烯基、1,3-己二烯基、1,4-己二烯基、1,5-己二烯基、2,4-己二烯基或1,3,5-己三烯基。链烯基可以是取代或未取代的。
“炔基”是指具有至少2个碳原子和至少一个三键的直链或支链烃。炔基可以包括任何数量的碳,如C2、C2-3、C2-4、C2-5、C2-6、C2-7、C2-8、C2-9、C2-10、C2-12、C2-14、C2-16、C2-18、C2-20、C8-20、C12-20、C14-20、C16-20和C18-20。炔基的实例包括但不限于,乙炔基、丙炔基、1-丁炔基、2-丁炔基、异丁炔基、仲丁炔基、丁二炔基、1-戊炔基、2-戊炔基、异戊炔基、1,3-戊二炔基、1,4-戊二炔基、1-己炔基、2-己炔基、3-己炔基、1,3-己二炔基、1,4-己二炔基、1,5-己二炔基、2,4-己二炔基或1,3,5-己三炔基。炔基可以是取代或未取代的。
“环烷基”是指含有3至12个环原子或规定数量的原子的饱和的或部分饱和的单环、稠合双环或桥接多环的环组合。环烷基可以包括任何数量的碳,如C3-6、C4-6、C5-6、C3-8、C4-8、C5-8、C6-8、C3-9、C3-10、C3-11、C3-12、C6-10或C6-12。饱和的单环环烷基环包括例如,环丙基、环丁基、环戊基、环己基和环辛基。饱和的双环和多环环烷基环包括例如,降冰片烷、[2.2.2]双环辛烷、十氢萘和金刚烷。环烷基还可以是部分不饱和的,在环中具有一个或多个双键或三键。代表性的部分不饱和环烷基包括但不限于,环丁烯、环戊烯、环己烯、环己二烯(1,3-和1,4-异构体)、环庚烯、环庚二烯、环辛烯、环辛二烯(1,3-、1,4-和1,5-异构体)、降冰片烯和降冰片二烯。当环烷基是饱和的单环C3-8环烷基时,例举的基团包括但不限于环丙基、环丁基、环戊基、环己基、环庚基和环辛基。当环烷基是饱和的单环C3-6环烷基时,例举的基团包括但不限于,环丙基、环丁基、环戊基和环己基。环烷基可以是取代或未取代的。
“杂环烷基”是指具有3-12个环成员和1-4个N,O和S杂原子的饱和环体系。额外的杂原子也可以是有用的,其中包括,但不限于,B,Al,Si和P。杂原子还可以是氧化的,例如但不限于-S(O)-和-S(O)2-。杂环烷基可包括任何数量的环原子,例如3-6,4-6,5-6,3-8,4-8,5-8,6-8,3-9,3-10,3-11,或3-12个环成员。任何合适数量的杂原子可包括在杂环烷基内,例如1,2,3,或4,或1-2,1-3,1-4,2-3,2-4,或3-4。杂环烷基可包括诸如下述之类的基团:氮杂环丙烷,氮杂环丁烷,吡咯烷,哌啶,吖庚因,azocane,奎宁环,吡唑烷,咪唑烷,哌嗪(1,2-,1,3-和1,4-异构体),氧杂环丙烷,氧杂环丁烷,四氢呋喃,噁烷(四氢吡喃),氧杂环庚烷,四氢呋喃,硫杂环丁烷,thiolane(四氢噻吩),thiane(四氢噻喃),噁唑烷,异噁唑烷,噻唑烷,异噻唑烷,二氧杂环戊烷,二硫杂环戊烷,吗啉,硫吗啉,二噁烷或二噻烷。杂环烷基也可以稠合成芳族或非-芳族环体系,形成包括但不限于下述的成员:二氢吲哚。杂环烷基可以是未取代或取代的。例如,杂环烷基可以被C1-6烷基或氧(=O)取代。
“芳基”是指具有任何合适数量的环原子和任何合适数量的环的芳族环体系。芳基可以包括任何合适数量的环原子,如6、7、8、9、10、11、12、13、14、15或16个环原子,以及6至10个、6至12个或6至14个环成员。芳基可以是单环的、稠合的以形成双环或三环基团或由键连接以形成联芳基。代表性的芳基包括苯基、萘基和联苯基。其他芳基包括苄基,其具有亚甲基连接基团。一些芳基具有6至12个环成员,如苯基、萘基或联苯基。其他芳基具有6至10个环成员,如苯基或萘基。一些其他芳基具有6个环成员,如苯基。芳基可以是取代或未取代的。
“杂芳基”是指含有5-16个环原子的单环或稠合双环或三环的芳族环组合,其中1-5个环原子是杂原子,例如N,O或S。额外的杂原子也可以是有用的,其中包括但不限于,B,Al,Si和P。杂原子还可以是氧化的,例如但不限于-S(O)-和-S(O)2-。杂芳基可包括任何数量的环原子,例如3-6,4-6,5-6,3-8,4-8,5-8,6-8,3-9,3-10,3-11,或3-12个环成员。任何合适数量的杂原子可包括在杂芳基内,例如1,2,3,4或5,或1-2,1-3,1-4,1-5,2-3,2-4,2-5,3-4,或3-5。杂芳基可具有5-8个环成员和1-4个杂原子,或5-8个环成员和1-3个杂原子,或者5-6个环成员和1-4个杂原子,或者5-6个环成员和1-3个杂原子。杂芳基可以包括诸如下述之类的基团:吡咯,吡啶,咪唑,吡唑,三唑,四唑,哌嗪,嘧啶,吡嗪,三嗪(1,2,3-,1,2,4-和1,3,5-异构体),噻吩,呋喃,噻唑,异噻唑,噁唑和异噁唑。杂芳基也可以稠合成芳族环体系,例如苯环,以形成包括但不限于下述的成员:苯并吡咯类,例如吲哚和异吲哚,苯并吡啶类,例如喹啉和异喹啉,苯并哌嗪(喹喔啉),苯并嘧啶(喹唑啉),苯并哒嗪类,例如酞嗪和邻二氮杂萘,苯并噻吩和苯并呋喃。其他杂芳基包括通过键连接的杂芳基环,例如联吡啶。杂芳基可以是取代或未取代的。
III.无溶剂的配体交换
本发明涉及在没有使用溶剂的情况下交换量子点上配体的方法。使用低粘度硅氧烷聚合物替代溶剂,其中该硅氧烷聚合物是替代配体。在一些实施方案中,本发明提供用第二配体替代量子点上的第一配体的方法,该方法包括混合反应混合物,所述反应混合物包括具有非共价键合到量子点上的第一配体的多个量子点,和具有第二配体的硅氧烷聚合物,使得第二配体替代第一配体并且非共价键合到量子点上,其中该反应混合物基本上不含溶剂,使得不要求溶剂除去步骤,和其中硅氧烷聚合物的Tg小于约100℃,和粘度小于约1000cSt,从而用第二配体替代量子点上的第一配体。
第一配体
第一配体可以是任何合适的配体,例如胺(伯,仲或叔胺),羧基,硫醇,膦或氧化膦。在一些实施方案中,第一配体可以是胺,羧基,硫醇,磷或氧化膦。在一些实施方案中,第一配体可以是胺,羧基或硫醇。
当第一配体是胺时,该胺可以是烷基胺。在一些实施方案中,第一配体可以是伯胺或仲胺。在一些其他实施方案中,第一配体可以是伯胺。代表性的胺包括,但不限于辛基胺,癸基胺,十二烷基胺,十二烷基胺,十四烷基胺或十六烷基胺。在一些其他实施方案中,第一配体可以是癸基胺。
当第一配体是羧基时,该羧基可以是羧烷基。在一些实施方案中,第一配体可以是羧基。代表性羧基包括但不限于,辛酸,癸酸,月桂酸,肉豆蔻酸和棕榈酸。在一些实施方案中,第一配体可以是月桂酸。
在本发明中可使用任何合适的膦或氧化膦作为第一配体。在一些实施方案中,第一配体可以是膦或氧化膦。代表性膦和氧化膦包括,但不限于,三己基膦,三辛基膦(TOP),三癸基膦,三己基氧化膦,三辛基氧化膦(TOPO),三癸基氧化膦。在一些实施方案中,第一配体可以是三辛基膦或三辛基氧化膦。代表性第一配体包括但不限于,癸基胺,月桂酸,三辛基膦和三辛基氧化膦。
硅氧烷聚合物
硅氧烷聚合物可以是玻璃化转变温度小于100℃,粘度小于1000cSt和具有适合于键合到量子点上且能替代第一键合配体的官能团的任何合适的硅氧烷聚合物。硅氧烷聚合物的特征在于具有-Si-O-Si-主链,且用通式-Si(R2)O-表示,其中R基可以是相同或不同的,且可以是任何合适的基团,其中包括的不限于,氢,烷基,杂烷基,烷基胺,羧烷基,链烯基,炔基,环烷基,杂环烷基,芳基和杂芳基。硅氧烷聚合物可以是直链,支链或环状的。硅氧烷聚合物可包括单一类型的单体重复单元,从而形成均聚物。备选地,硅氧烷聚合物可包括两种或更多种类型的单体重复单元,形成共聚物,该共聚物可以是无规共聚物或嵌段共聚物。
合适的硅氧烷聚合物可商购于GeneseePolymersofBurton,Michigan或GelestofMorrisville,Pennsylvania。备选地,硅氧烷聚合物可使用本领域技术人员已知的方法来制备。不管从商业来源获得还是重新制备硅氧烷聚合物,该硅氧烷聚合物可以具有任何合适的分子量,玻璃化转变温度和粘度,只要它含有适合于键合到量子点上的配体即可。合适的配体包括,但不限于,胺,羧基和硫醇基,它们能借助氢键键合,疏水相互作用或范德华力键合到量子点上。在一些实施方案中,硅氧烷聚合物包括胺或羧基键合基团作为第二配体。在其他实施方案中,硅氧烷聚合物包括胺键合基团作为第二配体。在一些其他实施方案中,硅氧烷聚合物包括羧基键合基团作为第二配体。
在一些实施方案中,硅氧烷聚合物可以是GeneseePolymers988:
硅氧烷聚合物典型地具有低的玻璃化转变温度和低粘度,这取决于聚合物的尺寸和侧挂于聚合物主链上的基团。例如,本发明的硅氧烷聚合物的玻璃化转变温度可以是小于约100℃,或者90,80,70,60,50,40,30,25,20,15,10,5或0℃。在一些实施方案中,硅氧烷聚合物的玻璃化转变温度可以小于约50℃。在其他实施方案中,硅氧烷聚合物的玻璃化转变温度可以小于约25℃。
本发明的硅氧烷聚合物可具有任何合适的粘度。例如,该硅氧烷聚合物的粘度可以小于约5000cSt,4000,3000,2000,1000,900,800,700,600,500,400,300,250,200,150,100,50或约1cSt。在一些实施方案中,该硅氧烷聚合物的粘度可以小于约1000cSt。在其他实施方案中,该硅氧烷聚合物的粘度可以小于约500cSt。在一些其他实施方案中,该硅氧烷聚合物的粘度可以小于约250cSt。
在一些实施方案中,该硅氧烷聚合物具有结构式I:
其中R1,R3,R4和R5各自可以独立地为C1-8烷基,环烷基或芳基;每一R2可以独立地为C1-8杂烷基,C2-8烷基胺和C2-8羧烷基;下标m可以是整数1-500;和下标n可以是整数0-500。
任何合适数量的下标m和n可以存在于式I的硅氧烷聚合物内。例如,下标m和n的数值可以是约1-约500,或约5-约100,或约5-约50,或约10-约50,或约10-约25。备选地,下标m和n的数值可以是约5,10,15,20,25,30,40,50,60,70,80,90或约100。
任何合适数量的下标m和n可以存在于本发明的量子点键合-配体内。当m和n均大于0时,下标m与n之比可以是约100:1,90:1,80:1,75:1,70:1,60:1,50:1,40:1,30:1,25:1,20:1,15:110:1,5:1,4:1,3:1,2.5:12:1,1:1,1:2,1:2.5,1:3,1:4,1:5,1:10,1:15,1:20,1:25,1:30,1:40,1:50,1:60,1:70,1:75,1:80,1:90或约1:100。在一些实施方案中,下标m与n之比是约1:100-约1:1。在其他实施方案中,下标m与下标n之比是约1:100-约1:10。在一些其他实施方案中,下标m与下标n之比是约1:50-约1:10。在仍然其他实施方案中,下标m与下标n之比是约1:20。
该硅氧烷聚合物可具有任何合适的分子量。例如,硅氧烷聚合物的分子量可以是约1000道尔顿(Da)-约20kDa,或分子量为约1kDa,2,3,4,5,6,7,8,9,10,15或20kDa。
可存在任何合适量的硅氧烷聚合物。例如,与量子点相比,该硅氧烷聚合物的存在量可以较大,大约相等,或者较小(重量/重量)。在一些实施方案中,硅氧烷聚合物的存在量可以是反应混合物的1%,2,3,4,5,6,7,8,9,10,15,20,25,30,35,40,45,50,60,70,80,90,95,96,97,98或99%(重量/重量)。
量子点
可在本发明中使用任何合适的量子点。QD的材料性质可以基本上是均一的,或在某些实施方案中可以是不均一的。QD的光学性质可以由其粒径、化学或表面组成确定;和/或由本领域可用的适合的光学测试确定。在约1nm和约15nm的范围内调节纳米晶体尺寸的能力使得在整个光谱中的光电发射覆盖范围能够为显色性提供强大的多样性。颗粒封装提供了针对化学和UV劣化剂的稳健性。
额外的例举的纳米结构包括但不限于,纳米线、纳米棒、纳米管、支链纳米结构、纳米四角晶(nanotetrapod)、三角晶(tripod)、双角晶(bipod)、纳米颗粒和具有至少一个区域或特征尺寸(任选地三个尺寸中的每一个)的类似结构,其尺寸小于约500nm,例如,小于约200nm,小于约100nm,小于约50nm,或甚至小于约20nm或小于约10nm。典型地,区域或特征尺寸将沿着结构的最小轴。纳米结构可以是,例如,基本上结晶的、基本上单晶的、多晶的、无定形的或其组合。
可以使用本领域技术人员已知的任何方法制备在本发明中使用的QD(或其它纳米结构)。例如,合适的QD和用于形成合适的QD的方法包括公开于以下中的那些:美国专利No.6,225,198,美国专利No.6,207,229,美国专利No.6,322,901,美国专利No.6,872,249,美国专利No.6,949,206,美国专利No.7,572,393,美国专利No.7,267,865,美国专利No.7,374,807,于2005年12月9日提交的美国专利申请No.2008/0118755,和美国专利No.6,861,155,将其各自的全部内容引入本文作为参考。
在本发明中使用的QD(或其它纳米结构)可以由任何合适的材料制备,合适地为无机材料,和更合适地无机导电或半导电材料。合适的半导体材料包括任何类型的半导体,其中包括II-VI族、III-V族、IV-VI族和IV族半导体。合适的半导体材料包括但不限于,Si、Ge、Sn、Se、Te、B、C(包括金刚石)、P、BN、BP、BAs、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、ZnO、ZnS、ZnSe、ZnTe、CdS、CdSe、CdSeZn、CdTe、HgS、HgSe、HgTe、BeS、BeSe、BeTe、MgS、MgSe、GeS、GeSe、GeTe、SnS、SnSe、SnTe、PbO、PbS、PbSe、PbTe、CuF、CuCl、CuBr、CuI、Si3N4、Ge3N4、Al2O3、(Al、Ga、In)2(S、Se、Te)3、Al2CO3,和两种或更多种这样的半导体的合适的组合。
在一些实施方案中,半导体纳米晶体或其他纳米结构还可以包含掺杂剂,如p型掺杂剂或n型掺杂剂。在本发明中有用的纳米晶体(或其他纳米结构)还可以包含II-VI或III-V半导体。II-VI或III-V半导体纳米晶体和纳米结构的实例包括来自周期表第II族的任何元素(如Zn、Cd和Hg)与来自第VI族的任何元素(如S、Se、Te、Po)的任何组合;和来自周期表第III族的元素(如B、Al、Ga、In和Tl)与来自第V族的任何元素(如N、P、As、Sb和Bi)的任何组合。其他合适的无机纳米结构包括金属纳米结构。合适的金属包括但不限于,Ru、Pd、Pt、Ni、W、Ta、Co、Mo、Ir、Re、Rh、Hf、Nb、Au、Ag、Ti、Sn、Zn、Fe、FePt等。
虽然普通技术人员已知的任何方法可以用于产生纳米晶体磷光体,但是合适地使用用于无机纳米材料磷光体的控制生长的溶液相胶体方法。参见Alivisatos,A.P.,"Semiconductorclusters,nanocrystals,andquantumdots,"Science271:933(1996);X.Peng,M.Schlamp,A.Kadavanich,A.P.Alivisatos,"EpitaxialgrowthofhighlyluminescentCdSe/CdSCore/Shellnanocrystalswithphotostabilityandelectronicaccessibility,"J.Am.Chem.Soc.30:7019-7029(1997);和C.B.Murray,D.J.Norris,M.G.Bawendi,"SynthesisandcharacterizationofnearlymonodisperseCdE(E=sulfur,selenium,tellurium)semiconductornanocrystallites,"J.Am.Chem.Soc.115:8706(1993),将其全部公开内容引入本文作为参考。该制造工艺技术利用低成本可加工性,无需洁净室和昂贵的制造设备。在这些方法中,将在高温下经历热解的金属前体迅速注入到有机表面活性剂分子的热溶液中。这些前体在高温下分裂并反应成有核纳米晶体。在该初始的成核相后,通过将单体加入到生长的晶体中开始生长相。该结果是溶液中的独立的晶体纳米颗粒,其具有覆盖在其表面的有机表面活性剂分子。
利用这一方法,合成作为初始的成核事件在数秒内发生,接着在升高的温度下晶体生长数分钟。参数如温度、所存在的表面活性剂的类型、前体材料和表面活性剂与单体的比例可以调整以改变反应的性质和进程。温度控制成核事件的结构相、前体的分解速率和生长速率。有机表面活性剂分子介导溶解度和纳米晶体形状的控制两者。表面活性剂与单体的比例、表面活性剂彼此之间的比例、单体彼此之间的比例和单体的单个浓度强烈地影响生长动力学。
在半导体纳米晶体中,光诱导的发射由纳米晶体的带边态产生。来自发光纳米晶体的带边发射与源于表面电子态的辐射和非辐射衰减通道竞争。X.Peng等,J.Am.Chem.Soc.30:7019-7029(1997)。结果,表面缺陷如悬空键的存在提供了非辐射性重组中心,并有助于降低的发射效率。钝化和去除表面陷阱态的有效和永久的方法是在纳米晶体的表面上外延生长无机壳材料。X.Peng等,J.Am.Chem.Soc.30:7019-7029(1997)。壳材料可以如此选择以使电子水平相对于芯材料为I型(例如,具有更大的能带隙以提供将电子和空穴集中在芯的电位阶跃)。结果,非辐射性重组的概率可降低。
通过将含有壳材料的有机金属前体加入含有芯纳米晶体的反应混合物中来获得芯-壳结构。在该情况下,芯充当核且壳从其表面生长,而不是成核事件之后接着生长。将反应温度保持低以有利于将壳材料单体加入到芯表面,同时防止壳材料的纳米晶体独立成核。表面活性剂存在于反应混合物中以引导壳材料的控制生长并确保溶解度。当在两种材料之间具有低的晶格失配时,获得均匀和外延生长的壳。
用于制备芯-壳发光纳米晶体的例举材料包括但不限于Si、Ge、Sn、Se、Te、B、C(包括金刚石)、P、Co、Au、BN、BP、BAs、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、ZnO、ZnS、ZnSe、ZnTe、CdS、CdSe、CdSeZn、CdTe、HgS、HgSe、HgTe、BeS、BeSe、BeTe、MgS、MgSe、GeS、GeSe、GeTe、SnS、SnSe、SnTe、PbO、PbS、PbSe、PbTe、CuF、CuCl、CuBr、CuI、Si3N4、Ge3N4、Al2O3、(Al、Ga、In)2(S、Se、Te)3、Al2CO3,和两种或更多种这样的材料的合适的组合。用于本发明的实践中的例举的芯-壳发光纳米晶体包括但不限于(以芯/壳表示)CdSe/ZnS、InP/ZnS、PbSe/PbS、CdSe/CdS、CdTe/CdS、CdTe/ZnS等。
在一些实施方案中,由于该材料的合成的相对成熟度,CdSe用作纳米晶体材料。由于一般表面化学的使用,还可以替代不含镉的纳米晶体。例举的发光纳米晶体材料包括CdSe或ZnS,包括包含CdSe/CdS/ZnS、CdSe/ZnS、CdSeZn/CdS/ZnS、CdSeZn/ZnS、InP/ZnS、PbSe/PbS、CdSe/CdS、CdTe/CdS或CdTe/ZnS的芯/壳发光纳米晶体。最优选地,本发明的量子点可以包括芯-壳QD,其具有包括CdSe的芯和至少一个包括CdS或ZnS的包封壳层。在其他实施方案中,InP用作纳米晶体材料。
在一些实施方案中,量子点可以是第II-VI族,第III-V族,第IV-VI族,或第IV族半导体。在其他实施方案中,量子点可以是Si,Ge,Sn,Se,Te,B,C,P,BN,BP,BAs,AlN,AlP,AlAs,AlSb,GaN,GaP,GaAs,GaSb,InN,InP,InAs,InSb,AlN,AlP,AlAs,AlSb,GaN,GaP,GaAs,GaSb,ZnO,ZnS,ZnSe,ZnTe,CdS,CdSe,CdSeZn,CdTe,HgS,HgSe,HgTe,BeS,BeSe,BeTe,MgS,MgSe,GeS,GeSe,GeTe,SnS,SnSe,SnTe,PbO,PbS,PbSe,PbTe,CuF,CuCl,CuBr,CuI,Si3N4,Ge3N4,Al2O3,Al2,Ga2,In2,S3,Se3,Te3,或Al2CO3.在一些其他实施方案中,量子点可以包括CdSe,CdTe或InP。
发光纳米晶体可以由不能透氧的材料制成,从而简化在QD磷光体材料中的QD的氧屏障要求和耐光性。在一些实施方案中,发光纳米晶体可以涂覆有一种或多种本发明的量子点键合配体并分散于具有一种或多种如以下更详细地讨论的基质材料的有机聚合物基质中。发光纳米晶体可以进一步涂覆有一个或多个无机层,所述无机层具有一种或多种材料,如二氧化硅、氧化铝或二氧化钛(例如,SiO2、Si2O3、TiO2或Al2O3),以密闭地密封QD。
可使用本发明的量子点组合物来形成照明装置,例如背光模块(BLU)。典型的BLU可包括夹在两层屏障层之间的QD膜。本发明的QD膜可包括单一量子点和单一量子点键合-配体,或者多个量子点和多个量子点键合-配体。例如,本发明的QD膜可包括镉量子点,例如CdS,CdTe,CdSe,CdSe/CdS,CdTe/CdS,CdTe/ZnS,CdSe/CdS/ZnS,CdSe/ZnS,CdSeZn/CdS/ZnS,或CdSeZn/ZnS,和具有胺键合基团的量子点键合配体。本发明的QD膜可包括InP量子点,例如InP或InP/ZnS,和具有羧基键合基团的量子点键合-配体。
在一些实施方案中,本发明的QD膜包括含镉和铟两者的量子点。当含镉和铟两者的量子点存在时,QD膜可包括含镉量子点的第一膜和含铟量子点的第二膜。这些膜然后可层叠在彼此之上,形成层状膜。在一些实施方案中,可在每一镉和铟膜之间层叠屏障膜或其他类型的膜。在其他实施方案中,在单一的QD膜内,一起混合镉和铟量子点与各自的量子点键合-配体。
具有或者单一层或者多层膜的混合QD膜具有的优点是,减少系统中的镉量。例如,镉可以下降到低于300ppm,200,100,75,50或25ppm。在一些实施方案中,QD膜含有小于约100ppm镉。在其他实施方案中,QD膜含有小于约50ppm。
其他工艺因子
可在任何合适的条件,例如温度,时间,压力,氛围和光下实践本发明的方法。例如,可使用任何合适的混合装置。在一些实施方案中,混合可以借助磁或机械搅拌。
可在任何合适的温度下进行本发明的方法。例如,可在低于室温,在室温或者高于室温的温度下进行该方法。在一些实施方案中,该温度可以是约25℃,或30,40,50,60,70,75,80,90或100℃。在其他实施方案中,可加热该反应混合物到至少约50℃。在一些其他实施方案中,可加热该反应混合物到至少约75℃。其他温度是本发明的方法中是有用的,且被本领域技术人员意识到。
可进行本发明的方法任何合适的时间段。例如,可进行该方法10分钟,15,20,25,30,45,或60分钟,以及1小时,2,3,4,5或更多小时。在一些实施方案中,可进行混合至少约30分钟。在其他实施方案中,可进行混合至少约1小时。在一些其他实施方案中,可进行混合至少约2小时。
可在任何合适的压力下进行本发明的方法。例如,该压力可以是在大约大气压下,低于大气压或者高于大气压。大气压定义为约14.7lbs·in-2(psi),约101千帕(kPa)和约1bar。在一些实施方案中,可在大约大气压下进行该混合。
可在本发明的方法中使用任何合适的氛围。例如,该氛围可以是惰性氛围或者非-惰性氛围。惰性氛围可尤其由诸如氮气或氩气之类的气体提供。非-惰性氛围包括在海平面处的氛围。在一些实施方案中,该氛围是惰性氛围。其他氛围在本发明的方法中是有用的。
可在任何合适的光条件下进行本发明的方法。例如,可在暗处,在其中排除特定波长的有限的光条件下,或者在没有任何预防措施来排除光的情况下进行该方法。
IV.实施例
实施例1.GP-988和绿色纳米晶体糊剂
在壳合成之后,在2x体积乙醇中洗涤甲苯纳米晶体溶液,其中该纳米晶体沉淀,并使用离心,沉降成压实的饼状物。然后从湿饼中滗析掉洗涤溶剂,然后在交换中使用糊状饼。对于QD合成和成壳的参考文献来说,参见Alivisatos,A.P.,"Semiconductorclusters,nanocrystals,andquantumdots,"Science271:933(1996);X.Peng,M.Schlamp,A.Kadavanich,A.P.Alivisatos,"EpitaxialgrowthofhighlyluminescentCdSe/CdSCore/Shellnanocrystalswithphotostabilityandelectronicaccessibility,"J.Am.Chem.Soc.30:7019-7029(1997);和C.B.Murray,D.J.Norris,M.G.Bawendi,"SynthesisandcharacterizationofnearlymonodisperseCdE(E=sulfur,selenium,tellurium)semiconductornanocrystallites,"J.Am.Chem.Soc.115:8706(1993),X.Peng等,J.Am.Chem.Soc.30:7019-7029(1997)。
将1.5gGP-988加入到绿色纳米晶体糊剂(来自15mL洗涤过的纳米晶体,滗析掉它的洗涤溶剂)中,用刮刀,然后用搅拌棒充分地搅拌,同时经2小时加热到90℃。冷却该溶液到室温并滗析到另一小瓶中。对于绿色的纳米晶体糊剂来说,典型的重量比为在8.0gGP988内0.8g糊剂,和对于红色的纳米晶体糊剂来说,为在6.0gGP988内0.12g糊剂。在用于溶剂交换的材料规格中,交换的绿色聚合物323-13E的量子产率测量结果为86.8%,和红色聚合物323-013F为87.2%。采用以上的绿色聚合物和红色聚合物制造的膜在胺固化的环氧树脂(Epic91)内混合,和热固化,在加速测试平台(灯箱III)上显示出280h的寿命,这在标准溶剂加工的材料膜的范围内。
可基于纳米晶体糊剂(NC)比配体聚合物的量来改变最终的光学密度(OD)。OD是在460nm下,在固定路径长度(通常1cm)下的吸光度。在洗涤之前测量NC生长溶液的OD,并用于通过下述关系式来计算在交换中所使用的聚合物量:VxOD=VxOD。在洗涤之前的生长溶液典型地为8-20OD。最终的硅氧烷聚合物材料的所需OD范围可以是30-80OD。因此,洗涤1000mL12OD生长溶液,通过离心压实,并滗析成湿饼糊剂。所得糊剂量通常为约0.5-5.0%洗涤之前的起始NC溶液体积。若所需的最终OD为约50,则将在交换中使用240mLGP988(1000X12=240X50)。在洗涤和交换中常常存在一些损失,因此典型地目标是较高的OD,然后可随后用配体聚合物稀释成所需的最终OD。
也可同样将QD糊剂加入到GP988流体中(添加顺序可以颠倒),取决于可用的分配和混合装置,这可以是优选的。
实施例2.GP-988和红色纳米晶体糊剂
将2.25gGP-988加入到红色纳米晶体糊剂(来自15ml洗涤过的纳米晶体,滗析掉它的洗涤溶剂)中,用刮刀,然后用搅拌棒充分地搅拌,同时经2小时加热到90℃。冷却该溶液到室温并滗析到另一小瓶中。
实施例3.制备纳米晶体膜
由在环氧树脂Epic91中的实施例1的绿色浓缩物和实施例2的红色浓缩物制造膜。加速可靠度试验表明与PORESH膜类似的稳定性,具体地,在加速测试平台(灯箱III)上275h的寿命,这在标准溶剂加工过的材料膜范围内。
尽管为了清楚地理解的目的,通过阐述和实施例详细地描述了前述发明,但本领域技术人员要理解,可在所附权利要求的范围内实践某些变化和改性。此外,本文提供的每一参考文献通过参考全文引入,其程度与每一参考文献单独地通过参考引入一样。在本申请和本文提供的参考文献之间存在冲突的情况下,本申请将占主导。
Claims (15)
1.用第二配体替代量子点上的第一配体的方法,该方法包括:
混合反应混合物,所述反应混合物包括具有非共价键合到量子点上的第一配体的多个量子点,和含第二配体的硅氧烷聚合物,使得第二配体替代第一配体并且非共价键合到量子点上,
其中该反应混合物基本上不含溶剂,由此不要求溶剂除去步骤,且其中硅氧烷聚合物的Tg小于约100℃,且粘度小于约1000cSt,从而用第二配体替代量子点上的第一配体。
2.权利要求1的方法,其中第一配体选自胺,羧酸,硫醇,膦和氧化膦。
3.权利要求1的方法,其中第一配体包括伯胺。
4.权利要求1的方法,其中量子点选自第II-VI族,第III-V族,第IV-VI族,和第IV族半导体。
5.权利要求1的方法,其中量子点选自Si,Ge,Sn,Se,Te,B,C,P,BN,BP,BAs,AlN,AlP,AlAs,AlSb,GaN,GaP,GaAs,GaSb,InN,InP,InAs,InSb,AlN,AlP,AlAs,AlSb,GaN,GaP,GaAs,GaSb,ZnO,ZnS,ZnSe,ZnTe,CdS,CdSe,CdSeZn,CdTe,HgS,HgSe,HgTe,BeS,BeSe,BeTe,MgS,MgSe,GeS,GeSe,GeTe,SnS,SnSe,SnTe,PbO,PbS,PbSe,PbTe,CuF,CuCl,CuBr,CuI,Si3N4,Ge3N4,Al2O3,Al2,Ga2,In2,S3,Se3,Te3,和Al2CO3。
6.权利要求1的方法,其中量子点选自CdSe,CdTe和InP。
7.权利要求1的方法,其中硅氧烷聚合物的Tg小于约50℃。
8.权利要求1的方法,其中硅氧烷聚合物的Tg小于约25℃。
9.权利要求1的方法,其中硅氧烷聚合物包括胺或羧基键合基团作为第二配体。
10.权利要求1的方法,其中硅氧烷聚合物是GeneseePolymers988。
11.权利要求1的方法,其中加热该反应混合物到至少约50℃。
12.权利要求1的方法,其中加热该反应混合物到至少约75℃。
13.权利要求1的方法,其中进行混合至少约30分钟。
14.权利要求1的方法,其中进行混合至少约1小时。
15.权利要求1的方法,其中进行混合约2小时。
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WO2014159927A2 (en) | 2014-10-02 |
US9005480B2 (en) | 2015-04-14 |
US20140264189A1 (en) | 2014-09-18 |
EP2970764B1 (en) | 2018-03-07 |
KR102203599B1 (ko) | 2021-01-14 |
JP6250785B2 (ja) | 2017-12-20 |
CA2905890A1 (en) | 2014-10-02 |
KR20150126959A (ko) | 2015-11-13 |
EP2970764A2 (en) | 2016-01-20 |
WO2014159927A3 (en) | 2015-10-29 |
JP2016524543A (ja) | 2016-08-18 |
EP2970764A4 (en) | 2016-12-14 |
CN105247010B (zh) | 2017-10-24 |
CA2905890C (en) | 2022-02-08 |
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