CN104937132B - 等离子体装置、碳薄膜的制造方法及涂布方法 - Google Patents

等离子体装置、碳薄膜的制造方法及涂布方法 Download PDF

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Publication number
CN104937132B
CN104937132B CN201480005582.0A CN201480005582A CN104937132B CN 104937132 B CN104937132 B CN 104937132B CN 201480005582 A CN201480005582 A CN 201480005582A CN 104937132 B CN104937132 B CN 104937132B
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CN
China
Prior art keywords
cathode member
arc
plasma
plasma device
evaporation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201480005582.0A
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English (en)
Chinese (zh)
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CN104937132A (zh
Inventor
加藤健治
高桥正人
孙琦
三上隆司
宫崎俊博
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Nissin Electric Co Ltd
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Nissin Electric Co Ltd
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Plasma Technology (AREA)
CN201480005582.0A 2013-01-22 2014-01-21 等离子体装置、碳薄膜的制造方法及涂布方法 Expired - Fee Related CN104937132B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013-009363 2013-01-22
JP2013009363 2013-01-22
JP2013-010820 2013-01-24
JP2013010820 2013-01-24
PCT/JP2014/051141 WO2014115733A1 (ja) 2013-01-22 2014-01-21 プラズマ装置、それを用いたカーボン薄膜の製造方法およびコーティング方法

Publications (2)

Publication Number Publication Date
CN104937132A CN104937132A (zh) 2015-09-23
CN104937132B true CN104937132B (zh) 2017-10-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480005582.0A Expired - Fee Related CN104937132B (zh) 2013-01-22 2014-01-21 等离子体装置、碳薄膜的制造方法及涂布方法

Country Status (8)

Country Link
US (1) US20150371833A1 (https=)
EP (1) EP2949779A4 (https=)
JP (2) JP5954440B2 (https=)
KR (1) KR20150133179A (https=)
CN (1) CN104937132B (https=)
HK (1) HK1210629A1 (https=)
SG (1) SG11201505685SA (https=)
WO (1) WO2014115733A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017438A1 (ja) * 2014-07-28 2016-02-04 日本アイ・ティ・エフ株式会社 カーボン薄膜、それを製造するプラズマ装置および製造方法
JP2016195035A (ja) * 2015-03-31 2016-11-17 ウシオ電機株式会社 極端紫外光光源装置
JP7122316B2 (ja) * 2017-09-25 2022-08-19 住友電気工業株式会社 硬質炭素系被膜の製造方法、及び被膜付き部材
JP7067690B2 (ja) * 2020-04-24 2022-05-16 住友電工ハードメタル株式会社 切削工具
JP7660321B2 (ja) * 2020-08-06 2025-04-11 日本アイ・ティ・エフ株式会社 真空アーク蒸着装置
CN112133619B (zh) * 2020-09-22 2023-06-23 重庆臻宝科技股份有限公司 下部电极塑封夹具及塑封工艺
WO2022254611A1 (ja) * 2021-06-02 2022-12-08 住友電工ハードメタル株式会社 切削工具
JP2023008834A (ja) * 2021-07-02 2023-01-19 住友金属鉱山株式会社 カーボン棒ホルダーおよびカーボン棒削り方法
DE102021128160B3 (de) * 2021-10-28 2023-01-05 Joachim Richter Systeme und Maschinen GmbH & Co. KG Vorrichtung und Verfahren zum Herstellen einer Graphenschicht
WO2025243543A1 (ja) * 2024-05-24 2025-11-27 国立大学法人豊橋技術科学大学 真空アーク放電発生装置における陰極および真空アーク放電発生装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401543A (en) * 1993-11-09 1995-03-28 Minnesota Mining And Manufacturing Company Method for forming macroparticle-free DLC films by cathodic arc discharge
JP2000212729A (ja) * 1999-01-22 2000-08-02 Kobe Steel Ltd 真空ア―ク蒸着装置
JP2003183816A (ja) * 2001-12-13 2003-07-03 Ulvac Japan Ltd 同軸型真空アーク蒸着源
JP2003193219A (ja) * 2001-12-27 2003-07-09 Kobe Steel Ltd 真空アーク蒸発源
JP2006111930A (ja) * 2004-10-15 2006-04-27 Nissin Electric Co Ltd 成膜装置
JP2007126754A (ja) * 2006-12-21 2007-05-24 Nissin Electric Co Ltd 真空アーク蒸着装置
JP2007305336A (ja) * 2006-05-09 2007-11-22 Stanley Electric Co Ltd 直流高密度プラズマ源、成膜装置および膜の製造方法
JP2009215622A (ja) * 2008-03-12 2009-09-24 Nissin Electric Co Ltd 成膜装置
US20090291326A1 (en) * 2008-05-26 2009-11-26 Fuji Electric Device Technology Co., Ltd. Protective film mainly composed of a tetrahedral amorphous carbon film and a magnetic recording medium having the protective film
CN101636519A (zh) * 2007-03-02 2010-01-27 株式会社理研 电弧式蒸发源
JP4497719B2 (ja) * 1997-10-24 2010-07-07 ナンヤン テクノロジカル ユニヴァーシティ 金属被膜用および誘電性被膜用の陰極アーク源

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US3836451A (en) * 1968-12-26 1974-09-17 A Snaper Arc deposition apparatus
US4673477A (en) * 1984-03-02 1987-06-16 Regents Of The University Of Minnesota Controlled vacuum arc material deposition, method and apparatus
EP0444538B2 (de) * 1990-03-01 2002-04-24 Balzers Aktiengesellschaft Vorrichtung und Verfahren zum Verdampfen von Material im Vakuum sowie Anwendung des Verfahrens
US5269898A (en) * 1991-03-20 1993-12-14 Vapor Technologies, Inc. Apparatus and method for coating a substrate using vacuum arc evaporation
JP2002105628A (ja) 2000-10-03 2002-04-10 Nissin Electric Co Ltd 真空アーク蒸着装置
JP2003003251A (ja) * 2001-06-20 2003-01-08 Olympus Optical Co Ltd 薄膜形成方法及び薄膜形成装置並びに蒸着源
JP4109503B2 (ja) * 2002-07-22 2008-07-02 日新電機株式会社 真空アーク蒸着装置
GB2450933A (en) * 2007-07-13 2009-01-14 Hauzer Techno Coating Bv Method of providing a hard coating
US8114256B2 (en) * 2007-11-30 2012-02-14 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
JP5649308B2 (ja) * 2009-04-28 2015-01-07 株式会社神戸製鋼所 成膜速度が速いアーク式蒸発源及びこのアーク式蒸発源を用いた皮膜の製造方法
WO2013015280A1 (ja) * 2011-07-26 2013-01-31 日新電機株式会社 プラズマ装置およびそれを用いたカーボン薄膜の製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401543A (en) * 1993-11-09 1995-03-28 Minnesota Mining And Manufacturing Company Method for forming macroparticle-free DLC films by cathodic arc discharge
JP4497719B2 (ja) * 1997-10-24 2010-07-07 ナンヤン テクノロジカル ユニヴァーシティ 金属被膜用および誘電性被膜用の陰極アーク源
JP2000212729A (ja) * 1999-01-22 2000-08-02 Kobe Steel Ltd 真空ア―ク蒸着装置
JP2003183816A (ja) * 2001-12-13 2003-07-03 Ulvac Japan Ltd 同軸型真空アーク蒸着源
JP2003193219A (ja) * 2001-12-27 2003-07-09 Kobe Steel Ltd 真空アーク蒸発源
JP2006111930A (ja) * 2004-10-15 2006-04-27 Nissin Electric Co Ltd 成膜装置
JP2007305336A (ja) * 2006-05-09 2007-11-22 Stanley Electric Co Ltd 直流高密度プラズマ源、成膜装置および膜の製造方法
JP2007126754A (ja) * 2006-12-21 2007-05-24 Nissin Electric Co Ltd 真空アーク蒸着装置
CN101636519A (zh) * 2007-03-02 2010-01-27 株式会社理研 电弧式蒸发源
JP2009215622A (ja) * 2008-03-12 2009-09-24 Nissin Electric Co Ltd 成膜装置
US20090291326A1 (en) * 2008-05-26 2009-11-26 Fuji Electric Device Technology Co., Ltd. Protective film mainly composed of a tetrahedral amorphous carbon film and a magnetic recording medium having the protective film

Also Published As

Publication number Publication date
EP2949779A1 (en) 2015-12-02
JP2016172927A (ja) 2016-09-29
KR20150133179A (ko) 2015-11-27
EP2949779A4 (en) 2016-10-05
JP6460034B2 (ja) 2019-01-30
HK1210629A1 (en) 2016-04-29
WO2014115733A1 (ja) 2014-07-31
SG11201505685SA (en) 2015-09-29
JPWO2014115733A1 (ja) 2017-01-26
JP5954440B2 (ja) 2016-07-20
CN104937132A (zh) 2015-09-23
US20150371833A1 (en) 2015-12-24

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