CN104934384B - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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CN104934384B
CN104934384B CN201510117186.3A CN201510117186A CN104934384B CN 104934384 B CN104934384 B CN 104934384B CN 201510117186 A CN201510117186 A CN 201510117186A CN 104934384 B CN104934384 B CN 104934384B
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semiconductor substrate
heat sink
solder
jut
semiconductor device
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CN104934384A (zh
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林将司
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Abstract

本发明涉及一种半导体装置及半导体装置的制造方法，其在于散热板上钎焊接合有半导体基板的半导体装置中，提供了一种使散热性提高的技术。半导体装置(10)具有：半导体基板(20)；焊料(64)，其被接合于半导体基板(20)上；散热板(50)，其为经由焊料(64)而与半导体基板(20)连接的散热板，并具有与焊料(64)接触的突起部(54)；树脂(70)，其将半导体基板(20)、焊料(64)、和突起部(54)密封。

Description

半导体装置及半导体装置的制造方法
技术领域
本发明涉及一种半导体装置。
背景技术
在专利文献1中，公开了一种半导体装置。在该半导体装置中，半导体芯片的下表面被钎焊接合于下侧散热装置上。半导体芯片的上表面被钎焊接合于上侧散热装置上。半导体芯片与软钎料通过模压树脂而被密封。
在先技术文献
专利文献
专利文献1：日本特开2006-165534号公报
发明内容
发明所要解决的课题
在如专利文献1这样的于散热板上钎焊接合有半导体基板的半导体装置中，期望散热性的进一步提高。
用于解决课题的方法
本发明的半导体装置具有：半导体基板；焊料，其被接合于所述半导体基板上；散热板，其为经由所述焊料而与所述半导体基板连接的散热板，并具有突起部，所述突起部被形成在所述散热板的经由所述焊料而与所述半导体基板连接的区域的外侧并且与所述焊料接触；树脂，其将所述半导体基板、所述焊料、和所述突起部密封。
在该半导体装置中，在半导体基板上所产生的热量经由焊料而被传递到散热板上。此外，由于焊料与突起部接触，因此，在从焊料起经由突起部的路径上热量也被传递到散热板上。由此，在该半导体装置中，热量从半导体基板被传到散热板上的路径较宽。因此，根据该半导体装置，能够更适当地对半导体基板的温度上升进行抑制。
此外，本発明提供一种制造半导体装置的方法。该方法具有通过树脂而对如下的半成品进行模压的工序，所述半成品具有半导体基板、被接合于所述半导体基板上的焊料和经由所述焊料而与所述半导体基板连接的散热板。所述散热板具有突起部，所述突起部被形成在所述散热板经由焊料而与所述半导体基板连接的区域的外侧。在所述工序中，通过所述树脂而将所述半导体基板、所述焊料和所述突起部密封。在所述工序中，通过被所述树脂按压而使所述突起部倾斜，从而使所述突起部与所述焊料接触。
根据该方法，能够制造出半导体基板的散热路径较宽的半导体装置。
附图说明
图1为实施方式中的半导体装置10的纵剖视图。
图2为实施方式中的半导体装置10的制造工序的说明图。
图3为实施方式中的半导体装置10的制造工序的说明图。
图4为改变例中的半导体装置的纵剖视图。
具体实施方式
图1所示的实施方式的半导体装置10具有半导体基板20、下侧散热板30、垫块40、上侧散热板50和树脂层70。
半导体基板20具有半导体层、被形成在半导体层的下表面上的下部电极(图示省略)和被形成在半导体层的上表面上的上部电极(省略图示)。下部电极被形成在半导体层的下表面全部区域内。上部电极被形成在半导体层的上表面的中央部处。即，上部电极的面积小于半导体层的上表面的面积。
下侧散热板30被配置于半导体基板20的下侧。下侧散热板30由Cu等热传导率较高的金属而构成。下侧散热板30通过软钎料层62(即，焊料)而与半导体基板20的下部电极连接。即，软钎料层62被接合于半导体基板20的下部电极上，并且被接合于下侧散热板30的上表面上。
垫块40被配置于半导体基板20的上侧。垫块40由Cu等热传导率较高的金属而构成。垫块40通过软钎料层64而与半导体基板20的上部电极连接。即，软钎料层64被接合于半导体基板20的上部电极上，并且被接合于垫块40的下表面上。
上侧散热板50被配置于垫块40的上侧。上侧散热板50由Cu等热传导率较高的金属而构成。上侧散热板50具有主体52和两个突起部54。两个突起部54从主体52的下表面52a向下侧突出。下表面52a之中被两个突起部54夹着区域成为用于安装垫块40的安装面56。安装面56通过软钎料层66而与垫块40的上表面连接。即，软钎料层66被接合于垫块40的上表面上，并且被接合于上侧散热板50的安装面56上。各突起部54向垫块40侧倾斜。各突起部54的顶端与软钎料层64及垫块40接触。另外，虽然未图示，但在半导体基板20的上表面上，除了上述的上部电极之外，还形成有未图示的信号输入输出用的电极。如上文所述，通过经由垫块40而使上侧散热板50与半导体基板20的上部电极连接，从而能够防止上侧散热板50与信号输入输出用的电极或配线接触的情况。
树脂层70对下侧散热板30的上表面、软钎料层62、半导体基板20、软钎料层64、垫块40、软钎料层66、以及上侧散热板50的下表面进行覆盖。
下侧散热板30与上侧散热板50兼作为用于向半导体基板20通电的电极。当向半导体基板20通电时，半导体基板20将会发热。在半导体基板20上所产生的热量以图1的箭头标记100所示的路径而被传递到下侧散热板30上。由于半导体基板20的下部电极被形成在半导体基板20的下表面全部区域内，因此，如箭头标记100所示，热量从半导体基板20朝向下侧散热板30在扩散的同时进行传递。因此，热量被有效地从半导体基板20传递至下侧散热板30。
此外，在半导体基板20上所产生的热量以图1的箭头标记102所示的路径而被传递到上侧散热板50上。并且，由于突起部54与软钎料层64及垫块40接触，因此，通过箭头标记104所示的路径也使热量从半导体基板20被传递到上侧散热板50上。由此，在半导体装置10中，上侧的散热路径并不限定于垫块40，通过经由了突起部54的路径也将使热量被传递到上侧散热板50上。因此，如箭头标记102、104所示，热量从半导体基板20朝向上侧散热板50而在扩散的同时被进行传递。因此，热量被有效地从半导体基板20传递到上侧散热板50。
如上文所说明的那样，在该半导体装置10中，即使半导体基板20的上部电极的面积较小，也能够有效地从半导体基板20向上侧散热板50传递热量。因此，在该半导体装置10中，能够有效地对半导体基板20的温度上升进行抑制。
接下来，对半导体装置10的制造方法进行说明。首先，准备图2所示的上侧散热板50。在该阶段中，上侧散热板50的突起部54相对于下表面52a而被大致垂直地直立设置。接下来，通过进行软钎焊，从而如图2所示，对上侧散热板50、垫块40、半导体基板20及下侧散热板30进行连接。即，通过软钎料层62而使半导体基板20的下部电极连接在下侧散热板30的上表面上。通过软钎料层64而使半导体基板20的上部电极连接在垫块40的下表面上。通过软钎料层66而使垫块40的上表面连接在上侧散热板50的安装面56上。在下文中，将图2所示的部件称为半成品12。
接下来，如图3所示，将半成品12设置于成形模具80的型腔82内。在成形模具80上形成有与型腔82连通的浇口84。各突起部54被设置于与浇口84对置的位置处。即，突起部54的外侧的表面(即，与垫块40对置的表面的相反侧的表面)与浇口84对置。接下来，通过浇口84而将树脂填充于型腔82内。于是，如图3所示，通过从浇口84向型腔82内流入的树脂的压力，从而使各突起部54以向垫块40侧倾斜的方式而变形。即，各突起部54被树脂按压而运动。其结果为，各突起部54的顶端与软钎料层62及垫块40接触。如此，当各突起部54被树脂按压而向垫块40侧倾斜时，即使在垫块40的厚度或位置(尤其图3中的纵向的位置)上存在偏差(误差)的情况下，也能够使各突起部54切实地与垫块40及软钎料层62接触。此外，被填充于型腔82内的树脂将下侧散热板30的上表面、软钎料层62、半导体基板20、软钎料层64、垫块40、软钎料层66、和上侧散热板50的下表面密封。当被填充于型腔82内的树脂固化时，将成为图1中的树脂层70。由此，图1的半导体装置10完成。
另外，虽然在上述的实施方式中，半导体基板20经由垫块40而与上侧散热板50连接，但也可以为如下结构，即，不存在垫块40，半导体基板20仅经由软钎料层而与上侧散热板50连接。例如，如图4所示，也可以在上侧散热板50上设置凸状的基座部58，并通过软钎料层68而使基座部58与半导体基板20连接。通过这种结构，也能够防止上侧散热板50与半导体基板20的上表面上的信号控制用的电极或配线接触的情况。此外，即使采用这种结构，也能够通过使各突起部54与软钎料层68接触，从而从半导体基板20向上侧散热板50有效地进行散热。
以上，虽然对本发明的具体示例进行了详细说明，但这些仅为例示，并不对专利的权利要求书进行限定。在专利的权利要求书所记载的技术中，包括对上文所例示的具体示例进行了各种的变形、变更的方式。
在本说明书或附图中所说明的技术要素为，单独或通过各种组合的方式来发挥技术上的有用性的要素，其并不限定于申请时的各权利要求项所记载的组合。此外，本说明书或附图所例示的技术为同时达成多个目的的技术，而达成其中的一个目的本身也具有技术上的有用性。
符号说明
10…半导体装置；
12：半成品
20：半导体基板
30：下侧散热板
40：垫块
50：上侧散热板
54：突起部
62：软钎料层
64：软钎料层
66：软钎料层
70：树脂层
80：成形模具
82：型腔
84：浇口

Claims (2)

1.一种方法，其为制造半导体装置的方法，其中，
具有通过树脂而对如下的半成品进行模压的工序，所述半成品具有半导体基板、被接合于所述半导体基板上的焊料和经由所述焊料而与所述半导体基板连接的散热板，
所述散热板具有突起部，所述突起部被形成在所述散热板经由焊料而与所述半导体基板连接的区域的外侧，
在所述工序中，通过所述树脂而将所述半导体基板、所述焊料和所述突起部密封，
在所述工序中，通过被所述树脂按压而使所述突起部倾斜，从而使所述突起部与所述焊料接触。
2.如权利要求1所述的方法，其中，
所述半成品还具有被配置于所述散热板与所述焊料之间的垫块，
在所述半成品中，所述散热板经由所述垫块和所述焊料而与所述半导体基板连接，
在所述工序中，使所述突起部与所述焊料及所述垫块接触。
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