JP4691455B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4691455B2 JP4691455B2 JP2006053227A JP2006053227A JP4691455B2 JP 4691455 B2 JP4691455 B2 JP 4691455B2 JP 2006053227 A JP2006053227 A JP 2006053227A JP 2006053227 A JP2006053227 A JP 2006053227A JP 4691455 B2 JP4691455 B2 JP 4691455B2
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- heat spreader
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
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- H01L2224/73201—Location after the connecting process on the same surface
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- H01L2924/19101—Disposition of discrete passive components
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
基板に搭載された半導体素子と、
該半導体素子の周囲に配置された電子部品と、
前記半導体素子の背面に接合部材により接合された放熱部材と
を有し、
該放熱部材は、前記半導体素子の外周と前記電子部品との間に延在する隔離部を有することを特徴とする半導体装置。
付記1記載の半導体装置であって、
前記隔離部は、前記放熱部材に一体に形成され、前記半導体素子の全周を包囲するように枠状に形成されていることを特徴とする半導体装置。
付記2記載の半導体装置であって、
前記接合部材は、加熱溶融してから硬化させることにより前記半導体素子の前記背面を前記放熱部材に接合する金属接合部材であって、前記枠状の隔離部の内側に配置されていることを特徴とする半導体装置。
付記3記載の半導体装置であって、
前記放熱部材及び前記隔離部は、前記金属接合部材に対する濡れ性を有する材料により形成されることを特徴とする半導体装置。
付記3記載の半導体装置であって、
前記金属接合部材は、はんだ及び銀ペーストのうちの一つであることを特徴とする半導体装置。
付記2記載の半導体装置であって、
前記放熱部材は前記半導体素子及び前記電子部品を収容する凹部を有し、
該凹部の外周部が前記基板に接合され、
前記隔離部は前記放熱部材から前記基板に向かって延在し、前記隔離部の先端と前記基板との間に所定の空隙が形成されていることを特徴とする半導体装置。
付記1記載の半導体装置であって、
前記隔離部は、前記放熱部材に取り付けられた前記放熱部材とは異なる部材であり、前記半導体素子の全周を包囲するように枠状に形成されていることを特徴とする半導体装置。
付記7記載の半導体装置であって、
前記放熱部材は前記半導体素子及び前記電子部品を収容する凹部を有し、
前記隔離部は金属板の曲げ加工により形成され、前記放熱部材の凹部に嵌め込まれて固定されていることを特徴とする半導体装置。
付記7記載の半導体装置であって、
前記接合部材は、加熱溶融してから硬化させることにより前記半導体素子の前記背面を前記放熱部材に接合する金属接合部材であって、前記枠状の隔離部の内側に配置されていることを特徴とする半導体装置。
付記8記載の半導体装置であって、
前記隔離部は、前記金属接合部材に対する濡れ性を有する材料により形成されることを特徴とする半導体装置。
付記7記載の半導体装置であって、
前記金属接合部材は、はんだ及び銀ペーストのうちの一つであることを特徴とする半導体装置。
付記7記載の半導体装置であって、
前記放熱部材の前記凹部の外周部が前記基板に接合され、
前記隔離部は前記放熱部材から前記基板に向かって延在し、前記隔離部の先端と前記基板との間に所定の空隙が形成されていることを特徴とする半導体装置。
周囲に電子部品が配置された半導体素子の背面に接合部材により接合されるよう構成された放熱部材であって、
前記半導体素子の外周と前記電子部品との間に延在するように形成された隔離部を有することを特徴とする放熱部材。
付記13記載の放熱部材であって、
前記半導体素子と前記電子部品を収容する凹部を有し、
前記隔離部は前記半導体素子の外形より大きい枠状の部材であり、該凹部の底部から延在することを特徴とする放熱部材。
付記14記載の放熱部材であって、
前記隔離部の先端は、前記放熱部材の底部からの前記凹部の周囲部分の高さより低いことを特徴とする放熱部材。
付記13記載の放熱部材であって、
前記隔離部は金属板の曲げ加工により形成され、前記凹部に嵌め込まれて固定されていることを特徴とする放熱部材。
2 プリント基板
4 チップ部品
5 接合部材
6 アンダーフィル
8 接着材
10,20 ヒートスプレッダ
10a,20a 凹部
10b、20b 脚部
12 隔離部
12a 端部
22 隔離部材
22a 枠状部
22b 取り付け部
Claims (1)
- 基板に搭載された半導体素子と、
該半導体素子の周囲に配置された電子部品と、
前記半導体素子の背面に接合部材により接合された放熱部材と
を有し、
該放熱部材は、前記半導体素子の外周と前記電子部品との間に延在する隔離部を有し、
該隔離部は前記放熱部材の一部であって前記放熱部材と一体に形成されており、
前記隔離部は、前記半導体素子の全周を包囲するように枠状に形成されており、
前記放熱部材は前記半導体素子及び前記電子部品を収容する凹部を有し、
該凹部の外周部が前記基板に接合され、
前記隔離部は前記基板に向かって延在し、前記隔離部の先端と前記基板との間に所定の空隙が形成されていることを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006053227A JP4691455B2 (ja) | 2006-02-28 | 2006-02-28 | 半導体装置 |
US11/500,879 US20070200209A1 (en) | 2006-02-28 | 2006-08-09 | Semiconductor device and heat radiation member |
US12/696,611 US8089146B2 (en) | 2006-02-28 | 2010-01-29 | Semiconductor device and heat radiation member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006053227A JP4691455B2 (ja) | 2006-02-28 | 2006-02-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007234781A JP2007234781A (ja) | 2007-09-13 |
JP4691455B2 true JP4691455B2 (ja) | 2011-06-01 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006053227A Expired - Fee Related JP4691455B2 (ja) | 2006-02-28 | 2006-02-28 | 半導体装置 |
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US (2) | US20070200209A1 (ja) |
JP (1) | JP4691455B2 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5309732B2 (ja) * | 2008-07-02 | 2013-10-09 | 日本精工株式会社 | 電動パワーステアリング装置 |
US8390112B2 (en) * | 2008-09-30 | 2013-03-05 | Intel Corporation | Underfill process and materials for singulated heat spreader stiffener for thin core panel processing |
US7816784B2 (en) * | 2008-12-17 | 2010-10-19 | Fairchild Semiconductor Corporation | Power quad flat no-lead semiconductor die packages with isolated heat sink for high-voltage, high-power applications, systems using the same, and methods of making the same |
CN102792441B (zh) * | 2010-03-12 | 2016-07-27 | 富士通株式会社 | 散热结构及其制造方法 |
JP5447175B2 (ja) | 2010-05-17 | 2014-03-19 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP5573645B2 (ja) * | 2010-12-15 | 2014-08-20 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5799565B2 (ja) * | 2011-04-22 | 2015-10-28 | 株式会社ソシオネクスト | 半導体装置及びその製造方法 |
JP2013115083A (ja) * | 2011-11-25 | 2013-06-10 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP6060527B2 (ja) * | 2012-05-31 | 2017-01-18 | 株式会社ソシオネクスト | 半導体パッケージ |
JP6036083B2 (ja) * | 2012-09-21 | 2016-11-30 | 株式会社ソシオネクスト | 半導体装置及びその製造方法並びに電子装置及びその製造方法 |
US9196537B2 (en) | 2012-10-23 | 2015-11-24 | Nxp B.V. | Protection of a wafer-level chip scale package (WLCSP) |
JP5892184B2 (ja) * | 2014-03-18 | 2016-03-23 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
FR3049764B1 (fr) * | 2016-03-30 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif electronique pourvu d'un organe de dissipation de la chaleur |
JP2019186375A (ja) * | 2018-04-10 | 2019-10-24 | 富士通コンポーネント株式会社 | 通信モジュール |
FR3092932A1 (fr) * | 2019-02-14 | 2020-08-21 | Stmicroelectronics (Grenoble 2) Sas | Dispositif électronique comprenant un capot |
CN110416097B (zh) * | 2019-06-12 | 2021-05-11 | 苏州通富超威半导体有限公司 | 防止铟金属溢出的封装结构及封装方法 |
JP2021052134A (ja) | 2019-09-26 | 2021-04-01 | 株式会社デンソー | 電子制御装置 |
WO2022138441A1 (ja) * | 2020-12-23 | 2022-06-30 | 株式会社村田製作所 | 高周波モジュール及び通信装置 |
WO2022224537A1 (ja) * | 2021-04-20 | 2022-10-27 | 日立Astemo株式会社 | 車載装置 |
US20240203820A1 (en) * | 2022-12-20 | 2024-06-20 | Qualcomm Incorporated | Package comprising a lid structure with a compartment |
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Also Published As
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US20070200209A1 (en) | 2007-08-30 |
US20100127364A1 (en) | 2010-05-27 |
JP2007234781A (ja) | 2007-09-13 |
US8089146B2 (en) | 2012-01-03 |
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