CN104779256A - 阵列基板及其制备方法、液晶面板 - Google Patents

阵列基板及其制备方法、液晶面板 Download PDF

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CN104779256A
CN104779256A CN201510166113.3A CN201510166113A CN104779256A CN 104779256 A CN104779256 A CN 104779256A CN 201510166113 A CN201510166113 A CN 201510166113A CN 104779256 A CN104779256 A CN 104779256A
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高冬子
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种阵列基板，包括玻璃基板以及形成在所述玻璃基板上的多个像素结构，所述像素结构包括透光区域和非透光区域，其中，所述非透光区域包括依次形成于所述玻璃基板上的栅极、栅极绝缘层、有源层、源极/漏极和钝化层；所述透光区域包括直接形成在所述玻璃基板上的像素电极，所述像素电极延伸至所述非透光区域上，并且与所述源极或所述漏极电性连接。本发明还公开了如上所述阵列基板的制备方法以及包含该阵列基板的液晶面板。

Description

阵列基板及其制备方法、液晶面板
技术领域
本发明涉及液晶显示技术领域,尤其涉及一种阵列基板及其制备方法，还涉及包含该阵列基板的液晶面板。
背景技术
液晶显示器(Liquid Crystal Display，LCD)，为平面超薄的显示设备，液晶面板是液晶显示器的重要组成部分。常用的液晶面板至少包括相对设置的阵列基板(array substrate)和滤光基板(color filter substrate)以及位于阵列基板和滤光基板之间的液晶层。
阵列基板通常包括玻璃基板以及形成在所述玻璃基板上的多个像素结构。图1为现有的一种阵列基板的结构示意图，图中仅示例性的示出了其中的一个像素结构。如图1所示的，该像素结构1包括透光区域1a和非透光区域1b，其中非透光区域1b包括依次形成于玻璃基板2上的栅极3、栅极绝缘层4、有源层5、欧姆接触层6、源极/漏极7a、7b和钝化层8；透光区域1a包括依次形成于玻璃基板2上的栅极绝缘层4、钝化层8和像素电极9，像素电极9延伸至非透光区域1b上，通过过孔8a与源极或漏极7a、7b电性连接。
在液晶显示装置中，背光源发出的光要依次经过偏光片、玻璃基板、液晶层、彩色滤光片等等的吸收和折射，最终的透光率一般在6％左右，增加光线的透过率是提高背光源利用率的有效途径。在如上结构的阵列基板中，如图1所示的，在像素结构1的透光区域1a中，像素电极9与玻璃基板2之间还包括栅极绝缘层4和钝化层9。在阵列基板中，栅极绝缘层4和钝化层9只要是为了间隔非透光区域1b中不同层别的金属层，但是对于透光区域1a中的像素电极9与玻璃基板2，栅极绝缘层4和钝化层9却是多余的，还会因吸收和折射导致损失部分光，从而降低了光线的透过率，降低了背光源的利用率。
发明内容
鉴于现有技术存在的不足，本发明首先提供了一种阵列基板及其制备方法，通过对阵列基板中的像素结构进行改进，提高了像素结构中透光区域的光线透过率，提高了背光源的利用率。
为了实现上述目的，本发明采用了如下的技术方案：
一种阵列基板，包括玻璃基板以及形成在所述玻璃基板上的多个像素结构，所述像素结构包括透光区域和非透光区域，其中，所述非透光区域包括依次形成于所述玻璃基板上的栅极、栅极绝缘层、有源层、源极/漏极和钝化层；所述透光区域包括直接形成在所述玻璃基板上的像素电极，所述像素电极延伸至所述非透光区域上，并且与所述源极或所述漏极电性连接。
其中，所述钝化层上设置有一过孔，所述像素电极通过所述过孔与所述源极或所述漏极电性连接。
其中，所述有源层与所述源极/漏极之间还设置有欧姆接触层。
其中，所述栅极绝缘层的材料为SiNx或SiOx。
其中，所述钝化层的材料为SiNx或SiOx。
如上所述的阵列基板的制备方法，包括步骤：
S10、在玻璃基板上制备栅极；
S20、在经过步骤S10之后的玻璃基板上依次制备栅极绝缘层薄膜、有源层、欧姆接触层、以及源极/漏极，其中所述栅极绝缘层薄膜覆盖所述像素结构的透光区域和非透光区域；
S30、在经过步骤S20之后的玻璃基板上制备钝化层薄膜，其中所述钝化层薄膜覆盖所述像素结构的透光区域和非透光区域；
S40、通过刻蚀工艺在所述钝化层薄膜上制备一过孔，同时将覆盖于所述透光区域上的所述栅极绝缘层薄膜和所述钝化层薄膜刻蚀去除，在所述透光区域暴露出所述玻璃基板；
S50、在经过步骤S40之后的玻璃基板上制备像素电极，其中所述像素电极在所述透光区域内连接于所述玻璃基板上，并且所述像素电极通过所述过孔与所述源极或所述漏极电性连接。
其中，所述步骤S10具体包括： 
在所述玻璃基板上形成一层栅极金属薄膜；
在所述栅极金属薄膜上涂覆光刻胶，并通过对光刻胶的曝光、显影保留栅极图形区域的光刻胶；
刻蚀掉暴露出的栅极金属薄膜并剥离剩余的光刻胶，形成所述栅极。
其中，所述步骤S20具体包括： 
在形成所述栅极的玻璃基板上依次形成栅极绝缘层薄膜、有源层薄膜、欧姆接触层薄膜以及源极/漏极金属薄膜，并在所述源极/漏极金属薄膜上涂覆光刻胶；
采用双色调掩膜板对光刻胶进行曝光显影，保留源极区域和漏极区域对应的光刻胶及沟道区域对应的光刻胶；
刻蚀掉暴露出的源极/漏极金属薄膜、欧姆接触层薄膜和有源层薄膜；
经过灰化处理去掉所述沟道区域对应的光刻胶，并刻蚀沟道区域上方的欧姆接触层薄膜以及源极/漏极金属薄膜；
剥离剩余的光刻胶，获得所述栅极绝缘层薄膜、有源层、欧姆接触层、以及源极/漏极。
其中，所述步骤S40具体包括： 
在所述钝化层薄膜上涂覆光刻胶，并通过对光刻胶的曝光、显影，在过孔区域和透光区域暴露出所述钝化层薄膜；
通过刻蚀工艺在所述过孔区域刻蚀去除所述钝化层薄膜，获得所述过孔；在所述透光区域刻蚀去除所述钝化层薄膜和栅极绝缘层薄膜，暴露出所述玻璃基板。
本发明还提供了一种液晶面板，包括相对设置的阵列基板和滤光基板以及位于所述阵列基板和滤光基板之间的液晶层，其中，所述阵列基板采用了如上所述的阵列基板。
相比于现有技术，本发明实施例提供的阵列基板以及液晶面板，通过对阵列基板中的像素结构进行改进，去除了透光区域中的栅极绝缘层和钝化层，使得透光区域中像素电极直接制备于玻璃基板上，从而提高了像素结构中透光区域的光线透过率，提高了背光源的利用率。
附图说明
图1是现有的一种阵列基板的结构示意图。
图2是本发明实施例提供的阵列基板的结构示意图。
图3a-图3h是本发明实施例提供的制备方法中各步骤形成的产品的图示。
图4是本发明实施例提供的液晶面板的结构示意图。
具体实施方式
下面将结合附图以及具体实施例，对本发明实施例中的技术方案进行详细地描述，显然，所描述的实施例仅仅是本发明一部分实例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护范围。
参阅图2，本实施例提供的一种阵列基板，其包括玻璃基板20以及形成在所述玻璃基板20上的多个像素结构10(附图中仅示例性示出了其中的一个像素结构10的局部剖面图)，该像素结构10包括透光区域10a和非透光区域10b。其中，所述非透光区域10b包括依次形成于所述玻璃基板20上的栅极30、栅极绝缘层40、有源层50、源极/漏极70a、70b和钝化层80。所述透光区域10a包括直接形成在所述玻璃基板20上的像素电极90，所述像素电极90延伸至所述非透光区域10b上，并且与所述源极/漏极70a、70b电性连接(在此，应当理解为像素电极90与源极70a或漏极70b的其中一个电性连接)。进一步地，为了使源极/漏极70a、70b与有源层50具有良好的电接触，所述有源层50与所述源极/漏极70a、70b之间还设置有欧姆接触层60。
具体地，所述钝化层80上设置有一过孔80a，所述像素电极90通过所述过孔80a与所述源极70a或漏极70b电性连接。 
其中，所述栅极绝缘层40的材料可以选择为SiNx或SiOx，所述钝化层80的材料可以选择为SiNx或SiOx。
如上提供的阵列基板中，去除了透光区域中的栅极绝缘层和钝化层，使得透光区域中像素电极直接制备于玻璃基板上，从而提高了像素结构中透光区域的光线透过率，提高了背光源的利用率。
下面参阅附图3a-图3h详细说明如上提供的阵列基板的制备工艺过程。
该阵列基板的制备方法包括步骤：
S10、在玻璃基板20上制备栅极30。具体地，如图3a和图3b所示，首先在所述玻璃基板20上形成一层栅极金属薄膜30a；然后在所述栅极金属薄膜30a上涂覆光刻胶，并通过对光刻胶的曝光、显影保留栅极图形区域的光刻胶；最 后刻蚀掉暴露出的栅极金属薄膜30a并剥离剩余的光刻胶，形成所述栅极30。
S20、在经过步骤S10之后的玻璃基板20上依次制备栅极绝缘层薄膜40a、有源层50、欧姆接触层60、以及源极/漏极70a、70b，其中所述栅极绝缘层薄膜40a覆盖所述像素结构10的透光区域10a和非透光区域10b。
具体地，参阅附图3c-图3e，首先,在形成所述栅极30的玻璃基板20上依次形成栅极绝缘层薄膜40a、有源层薄膜50a、欧姆接触层薄膜60a以及源极/漏极金属薄膜70，并在所述源极/漏极金属薄膜70上涂覆光刻胶(图中未示出)，如图3c所示。
然后,采用双色调掩膜板对光刻胶进行曝光显影，保留源极70a区域和漏极70b区域对应的光刻胶及沟道区域对应的光刻胶；刻蚀掉暴露出的源极/漏极金属薄膜70、欧姆接触层薄膜60a和有源层薄膜50a，得到如图3d所示的结构。
最后,经过灰化处理去掉所述沟道区域对应的光刻胶，并刻蚀沟道区域上方的欧姆接触层薄膜60a以及源极/漏极金属薄膜70，剥离剩余的光刻胶，获得所述栅极绝缘层薄膜40a、有源层50、欧姆接触层60、以及源极/漏极70a、70b，如图3e所示。
S30、在经过步骤S20之后的玻璃基板20上制备钝化层薄膜80b，其中所述钝化层薄膜80b覆盖所述像素结构10的透光区域10a和非透光区域10b，如图3f所示。
S40、通过刻蚀工艺在所述钝化层薄膜80b上制备一过孔80a，以暴露出用于与像素电极90电性相连的源极70a或漏极70b；同时，还将所述透光区域10a的栅极绝缘层薄膜40a和钝化层薄膜80b刻蚀去除，使所述透光区域10a暴露出所述玻璃基板20，获得最终的栅极绝缘层40和钝化层80。具体地，首先在所述钝化层薄膜80b上涂覆光刻胶，并通过对光刻胶的曝光、显影，在过孔80a区域和透光区域10a暴露出所述钝化层薄膜80b；然后通过刻蚀工艺在所述过孔区80a域刻蚀去除所述钝化层薄膜80b，获得所述过孔80a；在所述透光区域10a刻蚀去除所述钝化层薄膜80b和栅极绝缘层薄膜40a，暴露出所述玻璃基板20,如图3g所示。
S50、在经过步骤S40之后的玻璃基板20上制备像素电极90，其中所述像素电极90在所述透光区域10a内直接连接于所述玻璃基板20上，并且所述像素电极90通过所述过孔80a与所述源极70a或漏极70b电性连接,如图3h所示。
如上的制备工艺中，在步骤S40时通过一次MASK工艺，在制备过孔的同时将覆盖于所述透光区域的栅极绝缘层薄膜和钝化层薄膜刻蚀去除，不需要额外增加工序，其工艺简单，易于实施，并且最终制备得到了具有更高透过率的阵列基板。
本实施例中还提供了一种液晶面板，如图4所示，该液晶面板包括相对设置的阵列基板100和滤光基板200以及位于所述阵列基板100和滤光基板200之间的液晶层300，其中，所述阵列基板100采用了本实施例中提供的阵列基板。
综上所述，本发明实施例提供的阵列基板以及液晶面板，通过对阵列基板中的像素结构进行改进，去除了透光区域中的栅极绝缘层和钝化层，使得透光区域中像素电极直接制备于玻璃基板上，从而提高了像素结构中透光区域的光线透过率，提高了背光源的利用率。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (10)

1.一种阵列基板，包括玻璃基板(20)以及形成在所述玻璃基板(20)上的多个像素结构(10)，所述像素结构(10)包括透光区域(10a)和非透光区域(10b)，其特征在于，所述非透光区域(10b)包括依次形成于所述玻璃基板(20)上的栅极(30)、栅极绝缘层(40)、有源层(50)、源极/漏极(70a、70b)和钝化层(80)；所述透光区域(10a)包括直接形成在所述玻璃基板(20)上的像素电极(90)，所述像素电极(90)延伸至所述非透光区域(10b)上，并且与所述源极或所述漏极(70a、70b)电性连接。
2.根据权利要求1所述的阵列基板，其特征在于，所述钝化层(80)上设置有一过孔(80a)，所述像素电极(90)通过所述过孔(80a)与所述源极或所述漏极(70a、70b)电性连接。
3.根据权利要求1所述的阵列基板，其特征在于，所述有源层(50)与所述源极/漏极(70a、70b)之间还设置有欧姆接触层(60)。
4.根据权利要求1所述的阵列基板，其特征在于，所述栅极绝缘层(40)的材料为SiNx或SiOx。
5.根据权利要求1所述的阵列基板，其特征在于，所述钝化层(80)的材料为SiNx或SiOx。
6.如权利要求1-5任一所述的阵列基板的制备方法，包括步骤：
S10、在玻璃基板(20)上制备栅极(30)；
S20、在经过步骤S10之后的玻璃基板(20)上依次制备栅极绝缘层薄膜(40a)、有源层(50)、欧姆接触层(60)、以及源极/漏极(70a、70b)，其中所述栅极绝缘层薄膜(40a)覆盖所述像素结构(10)的透光区域(10a)和非透光区域(10b)；
S30、在经过步骤S20之后的玻璃基板(20)上制备钝化层薄膜(80b)，其中所述钝化层薄膜(80b)覆盖所述像素结构(10)的透光区域(10a)和非透光区域(10b)；
S40、通过刻蚀工艺在所述钝化层薄膜(80b)上制备一过孔(80a)，同时将覆盖于所述透光区域(10a)上的所述栅极绝缘层薄膜(40a)和所述钝化层薄膜(80b)刻蚀去除，并且在所述透光区域(10a)暴露出所述玻璃基板(20)；
S50、在经过步骤S40之后的玻璃基板(20)上制备像素电极(90)，其中所述像素电极(90)在所述透光区域(10a)内直接形成在所述玻璃基板(20)上，并且所述像素电极(90)通过所述过孔(80a)与所述源极或所述漏极(70a、70b)电性连接。
7.根据权利要求6所述的阵列基板制作方法，其特征在于，所述步骤S10具体包括：
在所述玻璃基板(20)上形成一层栅极金属薄膜(30a)；
在所述栅极金属薄膜(30a)上涂覆光刻胶，并通过对光刻胶的曝光、显影保留栅极图形区域的光刻胶；
刻蚀掉暴露出的栅极金属薄膜(30a)并剥离剩余的光刻胶，形成所述栅极(30)。
8.根据权利要求6所述的阵列基板制作方法，其特征在于，所述步骤S20具体包括：
在形成所述栅极(30)的玻璃基板(20)上依次形成栅极绝缘层薄膜(40a)、有源层薄膜(50a)、欧姆接触层薄膜(60a)以及源极/漏极金属薄膜(70)，并在所述源极/漏极金属薄膜(70)上涂覆光刻胶；
采用双色调掩膜板对光刻胶进行曝光显影，保留源极(70a)区域和漏极(70b)区域对应的光刻胶及沟道区域对应的光刻胶；
刻蚀掉暴露出的源极/漏极金属薄膜(70)、欧姆接触层薄膜(60a)和有源层薄膜(50a)；
经过灰化处理去掉所述沟道区域对应的光刻胶，并刻蚀沟道区域上方的欧姆接触层薄膜(60a)以及源极/漏极金属薄膜(70)；
剥离剩余的光刻胶，获得所述栅极绝缘层薄膜(40a)、有源层(50)、欧姆接触层(60)、以及源极/漏极(70a、70b)。
9.根据权利要求6所述的阵列基板制作方法，其特征在于，所述步骤S40具体包括：
在所述钝化层薄膜(80b)上涂覆光刻胶，并通过对光刻胶的曝光、显影，在过孔(80a)区域和透光区域(10a)暴露出所述钝化层薄膜(80b)；
通过刻蚀工艺在所述过孔区(80a)域刻蚀去除所述钝化层薄膜(80b)，获得所述过孔(80a)；同时，在所述透光区域(10a)刻蚀去除所述钝化层薄膜(80b)和栅极绝缘层薄膜(40a)，暴露出所述玻璃基板(20)。
10.一种液晶面板，包括相对设置的阵列基板(100)和滤光基板(200)以及位于所述阵列基板(100)和滤光基板(200)之间的液晶层(300)，其特征在于，所述阵列基板(100)为权利要求1-5任一所述的阵列基板。
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