CN201867561U - 阵列基板和液晶显示器 - Google Patents
阵列基板和液晶显示器 Download PDFInfo
- Publication number
- CN201867561U CN201867561U CN2010206017380U CN201020601738U CN201867561U CN 201867561 U CN201867561 U CN 201867561U CN 2010206017380 U CN2010206017380 U CN 2010206017380U CN 201020601738 U CN201020601738 U CN 201020601738U CN 201867561 U CN201867561 U CN 201867561U
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- array base
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- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 13
- 238000009413 insulation Methods 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000012528 membrane Substances 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000010408 film Substances 0.000 abstract description 33
- 238000005286 illumination Methods 0.000 abstract description 11
- 239000011159 matrix material Substances 0.000 abstract description 10
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 238000005530 etching Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 14
- 238000002161 passivation Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 235000002918 Fraxinus excelsior Nutrition 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000002956 ash Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Abstract
Description
Claims (8)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010206017380U CN201867561U (zh) | 2010-11-09 | 2010-11-09 | 阵列基板和液晶显示器 |
US13/291,253 US8860898B2 (en) | 2010-11-09 | 2011-11-08 | Array substrate and liquid crystal display |
KR1020110116091A KR101322885B1 (ko) | 2010-11-09 | 2011-11-08 | 어레이 기판과 액정 디스플레이 |
JP2011245425A JP2012103697A (ja) | 2010-11-09 | 2011-11-09 | アレイ基板及び液晶ディスプレイ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010206017380U CN201867561U (zh) | 2010-11-09 | 2010-11-09 | 阵列基板和液晶显示器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201867561U true CN201867561U (zh) | 2011-06-15 |
Family
ID=44138713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010206017380U Expired - Lifetime CN201867561U (zh) | 2010-11-09 | 2010-11-09 | 阵列基板和液晶显示器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8860898B2 (zh) |
JP (1) | JP2012103697A (zh) |
KR (1) | KR101322885B1 (zh) |
CN (1) | CN201867561U (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102854677A (zh) * | 2012-09-10 | 2013-01-02 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板的制造方法及显示装置 |
CN103199095A (zh) * | 2013-04-01 | 2013-07-10 | 京东方科技集团股份有限公司 | 显示器、薄膜晶体管阵列基板及其制造工艺 |
CN103727464A (zh) * | 2014-01-08 | 2014-04-16 | 昆山龙腾光电有限公司 | 背光模组及其制造方法 |
CN103887234A (zh) * | 2012-12-20 | 2014-06-25 | 北京京东方光电科技有限公司 | 一种tft阵列基板及其制造方法 |
WO2016161672A1 (zh) * | 2015-04-09 | 2016-10-13 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法、液晶面板 |
CN106997130A (zh) * | 2017-04-05 | 2017-08-01 | 惠科股份有限公司 | 一种显示面板及其制程和显示装置 |
CN109148595A (zh) * | 2018-08-13 | 2019-01-04 | 深圳市华星光电技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
CN109634004A (zh) * | 2018-11-12 | 2019-04-16 | 惠科股份有限公司 | 一种显示面板、制作方法和显示装置 |
CN110992835A (zh) * | 2019-12-20 | 2020-04-10 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及其驱动方法 |
CN111785735A (zh) * | 2020-07-02 | 2020-10-16 | Tcl华星光电技术有限公司 | 阵列基板及其制作方法、显示面板 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629585B (zh) * | 2011-11-17 | 2014-07-23 | 京东方科技集团股份有限公司 | 一种显示装置、薄膜晶体管、阵列基板及其制造方法 |
EP3141142A1 (de) | 2015-09-09 | 2017-03-15 | D. Swarovski KG | Farblich veränderbare schmucksteine |
KR20210091390A (ko) * | 2020-01-13 | 2021-07-22 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62181471A (ja) * | 1986-02-05 | 1987-08-08 | Komatsu Ltd | 薄膜トランジスタ |
JPH0486891A (ja) * | 1990-07-31 | 1992-03-19 | Fuji Xerox Co Ltd | El発光装置 |
KR100223899B1 (ko) * | 1996-01-15 | 1999-10-15 | 구자홍 | 액정표시장치의 구조 및 제조방법 |
KR20010004014A (ko) | 1999-06-28 | 2001-01-15 | 김영환 | 액정표시소자 및 그의 제조방법 |
JP2002108250A (ja) * | 2000-09-29 | 2002-04-10 | Sharp Corp | アクティブマトリックス駆動型自発光表示装置及びその製造方法 |
TWI261135B (en) * | 2002-05-28 | 2006-09-01 | Chi Mei Optoelectronics Corp | Method for fabricating thin film transistors of a TFT-LCD |
KR20060078131A (ko) | 2004-12-30 | 2006-07-05 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
JP4396744B2 (ja) * | 2006-09-15 | 2010-01-13 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
KR101279654B1 (ko) | 2006-10-25 | 2013-06-27 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
-
2010
- 2010-11-09 CN CN2010206017380U patent/CN201867561U/zh not_active Expired - Lifetime
-
2011
- 2011-11-08 US US13/291,253 patent/US8860898B2/en not_active Expired - Fee Related
- 2011-11-08 KR KR1020110116091A patent/KR101322885B1/ko active IP Right Grant
- 2011-11-09 JP JP2011245425A patent/JP2012103697A/ja active Pending
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102854677A (zh) * | 2012-09-10 | 2013-01-02 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板的制造方法及显示装置 |
CN103887234A (zh) * | 2012-12-20 | 2014-06-25 | 北京京东方光电科技有限公司 | 一种tft阵列基板及其制造方法 |
CN103199095A (zh) * | 2013-04-01 | 2013-07-10 | 京东方科技集团股份有限公司 | 显示器、薄膜晶体管阵列基板及其制造工艺 |
WO2014161234A1 (zh) * | 2013-04-01 | 2014-10-09 | 京东方科技集团股份有限公司 | 薄膜晶体管阵列基板及其制造方法和显示器 |
CN103199095B (zh) * | 2013-04-01 | 2016-06-08 | 京东方科技集团股份有限公司 | 显示器、薄膜晶体管阵列基板及其制造工艺 |
CN103727464A (zh) * | 2014-01-08 | 2014-04-16 | 昆山龙腾光电有限公司 | 背光模组及其制造方法 |
CN103727464B (zh) * | 2014-01-08 | 2016-02-24 | 昆山龙腾光电有限公司 | 背光模组及其制造方法 |
US9804464B2 (en) | 2015-04-09 | 2017-10-31 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate and method for preparing the same, liquid crystal panel |
WO2016161672A1 (zh) * | 2015-04-09 | 2016-10-13 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法、液晶面板 |
CN106997130A (zh) * | 2017-04-05 | 2017-08-01 | 惠科股份有限公司 | 一种显示面板及其制程和显示装置 |
CN106997130B (zh) * | 2017-04-05 | 2018-06-15 | 惠科股份有限公司 | 一种显示面板及其制程和显示装置 |
WO2018184275A1 (zh) * | 2017-04-05 | 2018-10-11 | 惠科股份有限公司 | 一种显示面板及其制程和显示装置 |
US11366364B2 (en) | 2017-04-05 | 2022-06-21 | HKC Corporation Limited | Display panel and manufacturing method thereof and display device |
CN109148595A (zh) * | 2018-08-13 | 2019-01-04 | 深圳市华星光电技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
CN109148595B (zh) * | 2018-08-13 | 2021-07-06 | Tcl华星光电技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
CN109634004A (zh) * | 2018-11-12 | 2019-04-16 | 惠科股份有限公司 | 一种显示面板、制作方法和显示装置 |
CN110992835A (zh) * | 2019-12-20 | 2020-04-10 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及其驱动方法 |
CN111785735A (zh) * | 2020-07-02 | 2020-10-16 | Tcl华星光电技术有限公司 | 阵列基板及其制作方法、显示面板 |
CN111785735B (zh) * | 2020-07-02 | 2022-07-12 | Tcl华星光电技术有限公司 | 阵列基板及其制作方法、显示面板 |
Also Published As
Publication number | Publication date |
---|---|
US20120113366A1 (en) | 2012-05-10 |
JP2012103697A (ja) | 2012-05-31 |
KR20120049834A (ko) | 2012-05-17 |
US8860898B2 (en) | 2014-10-14 |
KR101322885B1 (ko) | 2013-10-29 |
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