JP2012103697A - アレイ基板及び液晶ディスプレイ - Google Patents
アレイ基板及び液晶ディスプレイ Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 105
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 46
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 238000009413 insulation Methods 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 239000002184 metal Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Thin Film Transistor (AREA)
Abstract
【解決手段】本発明は、アレイ基板と液晶ディスプレイを開示している。このアレイ基板は、サブストレートと、前記サブストレートに形成された、横縦方向に交差して複数の画素ユニットを囲んで形成したデータライン及びゲートラインと、を備え、各画素ユニットは画素電極と薄膜トランジスタースイッチ素子とを備え、前記薄膜トランジスタースイッチ素子は、ゲート電極、ソース電極、ドレイン電極、活性層を備え、前記ゲート電極と活性層との間にゲート絶縁層が設けられ、前記ゲート絶縁層は不透明絶縁層を含む。
【選択図】図2
Description
図面2は本発明の実施例1に係わるアレイ基板の一部を示した側面図である。図面2に示したように、このアレイ基板はサブストレート1を備える。サブストレート基板1には、横縦方向に交差して複数の画素ユニットを囲んで画成したデータライン5とゲートライン(図示しない)が形成されている。各画素ユニットは画素電極11と薄膜トランジスター(TFT)スイッチ素子とを備える。各薄膜トランジスタースイッチ素子は、ゲート電極3、ソース電極7、ドレイン電極8、活性層6を備える。ゲート電極3はサブストレート1に形成され、活性層6はゲート電極3の上に形成され、ソース電極7及びドレイン電極8は活性層6の上に形成されている。ゲート電極3と活性層6との間にはゲート絶縁層が設けられている。ゲート絶縁層は不透明絶縁層41を備える。
図面3は本発明の実施例2に係わるアレイ基板の一部を示した側面図である。図面3に示したように、このアレイ基板はサブストレート1を備える。サブストレート1には、横縦方向に交差して複数の画素ユニットを囲んで画成したデータライン5とゲートライン(図示しない)とが形成されている。各画素ユニットは画素電極11と薄膜トランジスター(TFT)スイッチ素子とを備える。各薄膜トランジスタースイッチ素子は、ゲート電極3、ソース電極7、ドレイン電極8、活性層6を備える。ゲート電極3はサブストレートに形成され、活性層6はゲート電極3に形成され、ソース電極7及びドレイン電極8は活性層6に形成されている。ゲート電極3と活性層6との間には、ゲート絶縁層が設けられている。ゲート絶縁層は不透明絶縁層41を備える。更に、ゲート絶縁層は透明絶縁層42を更に備え、透明絶縁層42は不透明絶縁層41の下に形成されている。
本発明の技術案の実施例3は液晶パネルを備える液晶ディスプレイを提供している。前記液晶パネルは、前記実施例により提供されたいずれの構造を有するアレイ基板及び対向基板を備え、前記対向基板とアレイ基板との間に液晶層が挟まれるように設けられている。この対向基板はカラーフィルター基板でもよい。即ち、その上に、例えば、RGBカラーフィルターユニットが形成されてもよい。アレイ基板にカラーフィルターユニットが形成されると、対向基板にカラーフィルターユニットを設置しなくても良い。
2、ゲートライン
3、ゲート電極
4、ゲート絶縁層
5、データライン
6、活性層
7、ソース電極
8、ドレイン電極
9、パッシベーション層
10、パッシベーション層ビアホール
11、画素電極
17、フォトレジスト
19、TFTチャネル
41、不透明絶縁層
42、透明絶縁層
50、データライン金属薄膜
60、活性層薄膜
Claims (9)
- サブストレートと、
前記サブストレート基板に形成され横縦方向に交差することで複数の画素ユニットを囲んで画成するデータラインとゲートラインとを備えるアレイ基板であって、
各画素ユニットは、画素電極と薄膜トランジスタースイッチ素子とを備え、前記薄膜トランジスタースイッチ素子は、ゲート電極、ソース電極、ドレイン電極、活性層を備え、
前記ゲート電極と活性層との間にゲート絶縁層が設けられ、前記ゲート絶縁層は不透明絶縁層を含むことを特徴とするアレイ基板。 - 前記ゲート絶縁層は更に透明絶縁層を備え、前記透明絶縁層は前記不透明絶縁層の下に形成されたことを特徴とする請求項1に記載のアレイ基板。
- 前記不透明絶縁層は前記データライン、ソース電極、及びドレイン電極に対応して設けられたことを特徴とする請求項2に記載のアレイ基板。
- 前記不透明絶縁層の面積はその上のデータライン又は活性層の面積よりも大きいことを特徴とする請求項2又は3に記載のアレイ基板。
- 前記不透明絶縁層は黒い樹脂絶縁層であることを特徴とする請求項1〜3のいずれか一項に記載のアレイ基板。
- 前記不透明絶縁層の厚さは10000〜20000Åであることを特徴とする請求項1〜3のいずれか一項に記載のアレイ基板。
- 前記透明絶縁層の厚さは500〜5000Åであることを特徴とする請求項2又は3に記載のアレイ基板。
- 対向するように設けられた対向基板と、請求項1〜7のいずれか一項に記載のアレイ基板とを有する液晶パネルを備え、前記対向基板とアレイ基板との間に液晶層が挟まれるように形成されていることを特徴とする液晶ディスプレイ。
- 前記対向基板はカラーフィルター基板であることを特徴とする請求項8に記載の液晶ディスプレイ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010206017380U CN201867561U (zh) | 2010-11-09 | 2010-11-09 | 阵列基板和液晶显示器 |
CN201020601738.0 | 2010-11-09 |
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JP2012103697A true JP2012103697A (ja) | 2012-05-31 |
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JP2011245425A Pending JP2012103697A (ja) | 2010-11-09 | 2011-11-09 | アレイ基板及び液晶ディスプレイ |
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US (1) | US8860898B2 (ja) |
JP (1) | JP2012103697A (ja) |
KR (1) | KR101322885B1 (ja) |
CN (1) | CN201867561U (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102629585B (zh) * | 2011-11-17 | 2014-07-23 | 京东方科技集团股份有限公司 | 一种显示装置、薄膜晶体管、阵列基板及其制造方法 |
CN102854677A (zh) * | 2012-09-10 | 2013-01-02 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板的制造方法及显示装置 |
CN103887234A (zh) * | 2012-12-20 | 2014-06-25 | 北京京东方光电科技有限公司 | 一种tft阵列基板及其制造方法 |
CN103199095B (zh) * | 2013-04-01 | 2016-06-08 | 京东方科技集团股份有限公司 | 显示器、薄膜晶体管阵列基板及其制造工艺 |
CN103727464B (zh) * | 2014-01-08 | 2016-02-24 | 昆山龙腾光电有限公司 | 背光模组及其制造方法 |
CN104779256B (zh) * | 2015-04-09 | 2018-08-24 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法、液晶面板 |
EP3141142A1 (de) | 2015-09-09 | 2017-03-15 | D. Swarovski KG | Farblich veränderbare schmucksteine |
CN106997130B (zh) * | 2017-04-05 | 2018-06-15 | 惠科股份有限公司 | 一种显示面板及其制程和显示装置 |
CN109148595B (zh) * | 2018-08-13 | 2021-07-06 | Tcl华星光电技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
CN109634004A (zh) * | 2018-11-12 | 2019-04-16 | 惠科股份有限公司 | 一种显示面板、制作方法和显示装置 |
CN110992835B (zh) * | 2019-12-20 | 2022-06-17 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及其驱动方法 |
KR20210091390A (ko) * | 2020-01-13 | 2021-07-22 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN111785735B (zh) * | 2020-07-02 | 2022-07-12 | Tcl华星光电技术有限公司 | 阵列基板及其制作方法、显示面板 |
USD1029455S1 (en) | 2021-12-16 | 2024-06-04 | Shawn Purcell | Clothing garment |
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JPS62181471A (ja) * | 1986-02-05 | 1987-08-08 | Komatsu Ltd | 薄膜トランジスタ |
JPH0486891A (ja) * | 1990-07-31 | 1992-03-19 | Fuji Xerox Co Ltd | El発光装置 |
US5742365A (en) * | 1996-01-15 | 1998-04-21 | Lg Electronics, Inc. | Liquid crystal display device and method for manufacturing the same in which a light shielding layer is over the gate electrode or a gate electrode is in a trench |
JP2002108250A (ja) * | 2000-09-29 | 2002-04-10 | Sharp Corp | アクティブマトリックス駆動型自発光表示装置及びその製造方法 |
JP2003347555A (ja) * | 2002-05-28 | 2003-12-05 | Chi Mei Electronics Corp | 薄膜トランジスター液晶表示装置及びその薄膜トランジスター製作方法 |
JP2008096970A (ja) * | 2006-09-15 | 2008-04-24 | Seiko Epson Corp | 電気光学装置及び電子機器 |
KR20080037242A (ko) * | 2006-10-25 | 2008-04-30 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
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US8860898B2 (en) | 2014-10-14 |
CN201867561U (zh) | 2011-06-15 |
KR101322885B1 (ko) | 2013-10-29 |
KR20120049834A (ko) | 2012-05-17 |
US20120113366A1 (en) | 2012-05-10 |
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