CN101807550A - 阵列基板及其制造方法和液晶显示器 - Google Patents
阵列基板及其制造方法和液晶显示器 Download PDFInfo
- Publication number
- CN101807550A CN101807550A CN200910077351.1A CN200910077351A CN101807550A CN 101807550 A CN101807550 A CN 101807550A CN 200910077351 A CN200910077351 A CN 200910077351A CN 101807550 A CN101807550 A CN 101807550A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 73
- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 63
- 239000010408 film Substances 0.000 claims description 119
- 239000010410 layer Substances 0.000 claims description 96
- 238000005516 engineering process Methods 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 28
- 230000005540 biological transmission Effects 0.000 claims description 23
- 239000004973 liquid crystal related substance Substances 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
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- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 25
- 239000000047 product Substances 0.000 description 10
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- 238000012797 qualification Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (18)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910077351.1A CN101807550B (zh) | 2009-02-18 | 2009-02-18 | 阵列基板及其制造方法和液晶显示器 |
US12/702,495 US8553184B2 (en) | 2009-02-18 | 2010-02-09 | Manufacturing method of an array substrate including a four step process |
US14/017,692 US9070848B2 (en) | 2009-02-18 | 2013-09-04 | Array substrate and liquid crystal display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910077351.1A CN101807550B (zh) | 2009-02-18 | 2009-02-18 | 阵列基板及其制造方法和液晶显示器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101807550A true CN101807550A (zh) | 2010-08-18 |
CN101807550B CN101807550B (zh) | 2013-05-22 |
Family
ID=42559590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910077351.1A Expired - Fee Related CN101807550B (zh) | 2009-02-18 | 2009-02-18 | 阵列基板及其制造方法和液晶显示器 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8553184B2 (zh) |
CN (1) | CN101807550B (zh) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569185A (zh) * | 2010-12-22 | 2012-07-11 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和液晶显示器 |
CN102569192A (zh) * | 2012-03-06 | 2012-07-11 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
CN102709235A (zh) * | 2011-10-26 | 2012-10-03 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
WO2013131284A1 (zh) * | 2012-03-06 | 2013-09-12 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
CN103560114A (zh) * | 2013-11-15 | 2014-02-05 | 京东方科技集团股份有限公司 | 一种tft阵列基板及其制造方法、显示装置 |
CN104779256A (zh) * | 2015-04-09 | 2015-07-15 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法、液晶面板 |
CN107946318A (zh) * | 2017-11-27 | 2018-04-20 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
CN108269764A (zh) * | 2018-02-01 | 2018-07-10 | 京东方科技集团股份有限公司 | 一种显示面板的制作方法、显示面板及显示装置 |
CN110221470A (zh) * | 2019-06-27 | 2019-09-10 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示装置 |
CN110729236A (zh) * | 2019-10-23 | 2020-01-24 | 成都中电熊猫显示科技有限公司 | 阵列基板的制造方法、阵列基板及显示面板 |
CN111864035A (zh) * | 2020-07-31 | 2020-10-30 | 上海天马微电子有限公司 | 显示面板、显示面板的制作方法和显示装置 |
CN113383263A (zh) * | 2019-02-05 | 2021-09-10 | 脸谱科技有限责任公司 | 基于混合tft的微型显示投影仪的架构 |
CN113625485A (zh) * | 2021-07-28 | 2021-11-09 | 深圳莱宝高科技股份有限公司 | 阵列基板及其制作方法、显示装置 |
US11699773B2 (en) | 2019-06-19 | 2023-07-11 | Meta Platforms Technologies, Llc | Process flow for hybrid TFT-based micro display projector |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2009154168A1 (ja) * | 2008-06-17 | 2009-12-23 | 株式会社日立製作所 | 有機発光素子、その作製方法、その作製装置及びそれを用いた有機発光装置 |
WO2012004925A1 (ja) * | 2010-07-08 | 2012-01-12 | シャープ株式会社 | 半導体装置及びその製造方法並びに液晶表示装置 |
CN102629588B (zh) * | 2011-12-13 | 2014-04-16 | 京东方科技集团股份有限公司 | 阵列基板的制造方法 |
CN102544029A (zh) * | 2012-02-07 | 2012-07-04 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管阵列基板及其制作方法 |
CN103107140B (zh) * | 2013-01-28 | 2016-01-13 | 京东方科技集团股份有限公司 | 一种薄膜晶体管阵列基板及其制作方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2990046B2 (ja) * | 1995-08-16 | 1999-12-13 | 日本電気株式会社 | 反射型液晶表示装置及びその製造方法 |
US20030053016A1 (en) * | 2000-02-16 | 2003-03-20 | Hirofumi Kubota | Formed body, reflecting plate, reflection display device, and method for fabricating reflecting plate |
JP2004198606A (ja) * | 2002-12-17 | 2004-07-15 | Koninkl Philips Electronics Nv | 光拡散反射層を有する液晶表示装置及びその製造方法 |
KR100945442B1 (ko) | 2003-02-28 | 2010-03-05 | 엘지디스플레이 주식회사 | 씨오티 구조 반투과형 액정표시장치 |
KR100493437B1 (ko) * | 2003-03-17 | 2005-06-07 | 엘지.필립스 엘시디 주식회사 | 액정표시모듈 |
KR101057779B1 (ko) * | 2004-06-05 | 2011-08-19 | 엘지디스플레이 주식회사 | 반투과형 박막 트랜지스터 기판 및 그 제조 방법 |
KR101085142B1 (ko) * | 2004-12-24 | 2011-11-21 | 엘지디스플레이 주식회사 | 수평 전계 박막 트랜지스터 기판 및 그 제조 방법 |
KR101192073B1 (ko) * | 2005-06-28 | 2012-10-17 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치 및 그 제조방법 |
TWI314658B (en) * | 2005-09-09 | 2009-09-11 | Au Optronics Corp | Pixel structure of transflective tft lcd panel and fabricating method thereof |
KR101166842B1 (ko) * | 2005-12-29 | 2012-07-19 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판의 제조 방법 및 이를 이용한박막 트랜지스터 어레이 기판 |
KR20070070382A (ko) | 2005-12-29 | 2007-07-04 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
KR20070083018A (ko) * | 2006-02-20 | 2007-08-23 | 삼성전자주식회사 | 액정표시장치의 제조방법 |
JP4814776B2 (ja) * | 2006-12-14 | 2011-11-16 | 株式会社 日立ディスプレイズ | 半透過型液晶表示装置 |
-
2009
- 2009-02-18 CN CN200910077351.1A patent/CN101807550B/zh not_active Expired - Fee Related
-
2010
- 2010-02-09 US US12/702,495 patent/US8553184B2/en not_active Expired - Fee Related
-
2013
- 2013-09-04 US US14/017,692 patent/US9070848B2/en active Active
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569185A (zh) * | 2010-12-22 | 2012-07-11 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和液晶显示器 |
US9111814B2 (en) | 2010-12-22 | 2015-08-18 | Boe Technology Group Co., Ltd. | Array substrate, manufacturing method thereof and LCD |
CN102709235A (zh) * | 2011-10-26 | 2012-10-03 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN102709235B (zh) * | 2011-10-26 | 2015-04-29 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN102569192A (zh) * | 2012-03-06 | 2012-07-11 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
WO2013131282A1 (zh) * | 2012-03-06 | 2013-09-12 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
WO2013131284A1 (zh) * | 2012-03-06 | 2013-09-12 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
CN102569192B (zh) * | 2012-03-06 | 2014-04-09 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
CN103560114A (zh) * | 2013-11-15 | 2014-02-05 | 京东方科技集团股份有限公司 | 一种tft阵列基板及其制造方法、显示装置 |
CN103560114B (zh) * | 2013-11-15 | 2017-07-18 | 京东方科技集团股份有限公司 | 一种tft阵列基板及其制造方法、显示装置 |
WO2016161672A1 (zh) * | 2015-04-09 | 2016-10-13 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法、液晶面板 |
CN104779256A (zh) * | 2015-04-09 | 2015-07-15 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法、液晶面板 |
US9804464B2 (en) | 2015-04-09 | 2017-10-31 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate and method for preparing the same, liquid crystal panel |
CN104779256B (zh) * | 2015-04-09 | 2018-08-24 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法、液晶面板 |
CN107946318A (zh) * | 2017-11-27 | 2018-04-20 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
CN108269764A (zh) * | 2018-02-01 | 2018-07-10 | 京东方科技集团股份有限公司 | 一种显示面板的制作方法、显示面板及显示装置 |
CN113383263A (zh) * | 2019-02-05 | 2021-09-10 | 脸谱科技有限责任公司 | 基于混合tft的微型显示投影仪的架构 |
US11699773B2 (en) | 2019-06-19 | 2023-07-11 | Meta Platforms Technologies, Llc | Process flow for hybrid TFT-based micro display projector |
CN110221470A (zh) * | 2019-06-27 | 2019-09-10 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示装置 |
CN110729236A (zh) * | 2019-10-23 | 2020-01-24 | 成都中电熊猫显示科技有限公司 | 阵列基板的制造方法、阵列基板及显示面板 |
CN111864035A (zh) * | 2020-07-31 | 2020-10-30 | 上海天马微电子有限公司 | 显示面板、显示面板的制作方法和显示装置 |
CN113625485A (zh) * | 2021-07-28 | 2021-11-09 | 深圳莱宝高科技股份有限公司 | 阵列基板及其制作方法、显示装置 |
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