CN104681521A - 用于集成电路制造的物品、工艺、系统 - Google Patents
用于集成电路制造的物品、工艺、系统 Download PDFInfo
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- CN104681521A CN104681521A CN201510053757.1A CN201510053757A CN104681521A CN 104681521 A CN104681521 A CN 104681521A CN 201510053757 A CN201510053757 A CN 201510053757A CN 104681521 A CN104681521 A CN 104681521A
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Abstract
本申请涉及“用于集成电路制造的物品、工艺、系统”。一种发泡块体金属玻璃电连接在集成电路封装的衬底上形成。发泡块体金属玻璃电连接展示了在震动和动态加载期间防止破裂的低模量。发泡块体金属玻璃电连接用作焊料凸块,用于集成电路设备与外部结构之间的通信。形成发泡块体金属玻璃电连接的工艺包括混合块体金属玻璃与发泡剂。
Description
本分案申请的母案申请日为2007年6月12日、申请号为200780022560.5、发明名称为“块体金属玻璃焊料、发泡块体金属玻璃焊料、芯片封装中的发泡焊料接合垫、装配其的方法及包含其的系统”。
技术领域
实施例一般涉及集成电路制造。更具体地说,实施例涉及集成电路制造中的电连接。
背景技术
电连接是封装的集成电路(IC)的重要部分。IC管芯经常制造成诸如处理器等微电子设备。电连接在IC管芯操作期间遇到热应力。此外,在制造和处理期间,封装的IC管芯可遇到会损害电连接完整性的物理震击(shock)。
发明内容
技术方案1.一种用于集成电路制造的物品,包括:
块体金属玻璃,其中所述块体金属玻璃在从电凸块、金属化互连、迹线和接合垫中选择的宏观结构构型中,其中,在所述接合垫上形成中间焊料层,所述中间焊料层是块体金属玻璃预发泡。
技术方案2.如技术方案1所述的物品,其中所述块体金属玻璃具有从多泡孔泡沫和网状泡沫选择的微观结构发泡构型。
技术方案3.如技术方案1所述的物品,其中所述块体金属玻璃是从ZrAlCuO、ZrAlNiCuO、ZrAlNiCuO、ZrTiAlNiCuO、ZrAlNiCu(Cr,Mo)、ZrAlNiCu(Ag,Pd,Au,Pt)、ZrAlNiCu(Nb,Ta,V)、ZrAlNi(Ag,Pd,Au,Pt)、ZrAlCuPd、ZrNi(Fe,Co)、ZrNi(Pd,Au,Pt)、ZrCuPd、ZrPd、ZrPt或其组合中选择的锆合金。
技术方案4.如技术方案1所述的物品,其中所述块体金属玻璃是从HfAlNiCu、HfAlNiCuPd、HfAlNiAg、HfCu(Pd,Pt)或其组合中选择的铪合金。
技术方案5.如技术方案1所述的物品,其中所述块体金属玻璃是从TiZrNi、TiZrNiCu或其组合中选择的钛合金。
技术方案6.如技术方案1所述的物品,其中所述块体金属玻璃是铁合金。
技术方案7.如技术方案1所述的物品,其中所述块体金属玻璃从锆合金、铪合金、钛合金、铁合金或其组合中选择。
技术方案8.如技术方案1所述的物品,其中所述宏观结构构型是具有凸块直径在大约1μm到大约300μm范围的电凸块。
技术方案9.如技术方案1所述的物品,其中所述宏观结构构型是电凸块,包括:
发泡焊料核第一材料;以及
焊料衬底第二材料,所述焊料衬底第二材料上布置有所述发泡焊料核第一材料。
技术方案10.如技术方案1所述的物品,其中所述宏观结构构型是电凸块,包括:
发泡焊料核第一材料;以及
焊料壳第二材料,所述焊料壳第二材料覆盖所述发泡焊料核第一材料。
技术方案11.如技术方案1所述的物品,其中所述宏观结构构型是金属化互连,并且其中所述块体金属玻璃具有从多泡孔泡沫和网状泡沫中选择的微观结构发泡构型。
技术方案12.如技术方案1所述的物品,其中所述宏观结构构型是包括第一电凸块和与所述第一电凸块间隔分开的第二电凸块的电凸块。
技术方案13.如技术方案1所述的物品,其中所述宏观结构构型包括第一电凸块和与所述第一电凸块间隔分开的第二电凸块,以及其中所述第一电凸块与所述第二电凸块相邻并且以少于或等于0.8毫米的间距间隔分开。
技术方案14.如技术方案1所述的物品,其中所述宏观结构构型是成形在安装衬底上其板侧的电凸块。
技术方案15.如技术方案1所述的物品,其中所述宏观结构构型是成形在安装衬底上其管芯侧的电凸块。
技术方案16.一种用于集成电路制造的物品,包括:
在集成电路设备中的接合垫,其中所述接合垫具有发泡金属微观结构构型,其中,所述接合垫包含块体金属玻璃,其中,在所述接合垫上形成中间焊料层,所述中间焊料层是块体金属玻璃预发泡。
技术方案17.如技术方案16所述的物品,其中所述接合垫包括从锆合金、铪合金、钛合金、铁合金及其组合中选择的块体金属玻璃。
技术方案18.如技术方案16所述的物品,其中所述发泡金属微观结构构型从多泡孔发泡和网状发泡中选择。
技术方案19.如技术方案16所述的物品,其中所述接合垫成形在安装衬底其板侧。
技术方案20.如技术方案16所述的物品,其中所述接合垫成形在安装衬底其管芯侧。
技术方案21.一种用于集成电路制造的工艺,包括:
共沉积块体金属玻璃前驱物颗粒与成孔剂颗粒,其中所述块体金属玻璃在从电凸块、金属化互连、迹线和接合垫中选择的宏观结构构型中,其中,在所述接合垫上形成中间焊料层,所述中间焊料层是块体金属玻璃预发泡。
技术方案22.如技术方案21所述的工艺,其中所述成孔剂颗粒是多孔颗粒,以及其中共沉积是从电凸块、金属化互连、迹线及接合垫中选择的宏观结构构型的共沉积。
技术方案23.如技术方案21所述的工艺,其中所述成孔剂颗粒是发泡剂颗粒,以及其中共沉积是从电凸块、金属化互连、迹线及接合垫中选择的宏观结构构型的共沉积。
技术方案24.一种用于集成电路制造的系统,包括:
管芯;
在集成电路设备中的接合垫,其中所述接合垫具有发泡金属微观结构构型,其中,所述接合垫包含块体金属玻璃,其中,在所述接合垫上形成中间焊料层,所述中间焊料层是块体金属玻璃预发泡;以及
通过所述接合垫耦合到所述管芯的动态随机存取存储器。
技术方案25.如技术方案24所述的系统,其中所述系统布置在计算机、无线通信器、手持式装置、汽车、机车、航空器、水运工具或航天器之一中。
技术方案26.如技术方案24所述的系统,其中所述管芯是从数据存储设备、数字信号处理器、微控制器、专用集成电路或微处理器中选择。
技术方案27.一种用于集成电路制造的系统,包括:
管芯;
耦合到所述管芯的块体金属玻璃,其中所述块体金属玻璃在从电凸块、金属化互连、迹线和接合垫中选择的宏观结构构型中,其中,在所述接合垫上形成中间焊料层,所述中间焊料层是块体金属玻璃预发泡;以及
耦合到所述管芯的动态随机存取存储器。
技术方案28.如技术方案27所述的系统,其中所述系统布置在计算机、无线通信器、手持式装置、汽车、机车、航空器、水运工具或航天器之一中。
技术方案29.如技术方案27所述的系统,其中所述管芯从数据存储设备、数字信号处理器、微控制器、专用集成电路或微处理器中选择。
附图说明
为示出获得实施例的方式,将参照附图中示出的特定实施例,提供上面简要描述的实施例的更详细描述。基于对这些图形只是示出典型实施例,而这些典型实施例不必按比例画出且因此不可视为限制其范围的理解,将通过使用附图以另外的细节和详情描述实施例,其中:
图1是根据实施例,包括发泡(foamed)接合垫的物品的垂直横截面;
图2是根据实施例,包括发泡接合指(bond finger)和迹线的物品的垂直横截面;
图3是根据实施例,包括发泡接合垫和电凸块的物品的垂直横截面;
图4是根据实施例,包括发泡金属化互连的物品的垂直横截面;
图5是根据实施例,包括发泡接合垫和电凸块,也包括作为焊料壳中发泡焊料核的电凸块的物品的垂直横截面;
图6是根据实施例,包括布置在焊料衬底第二材料上的发泡焊料核第一材料的物品的垂直横截面;
图7是根据实施例,形成发泡BMG的工艺示图;
图8是根据各种实施例,描述工艺流程的流程图;
图9是根据实施例,形成多孔BMG电连接的工艺示图;
图10是根据实施例,加工BMG前驱物的工艺流程图;
图11是根据实施例,示出计算系统的剖面透视图(cut-awayperspective);以及
图12是根据实施例的计算系统的示图。
具体实施方式
此公开内容中的实施例涉及在集成电路(IC)中使用的块体金属玻璃(BMG)。实施例也涉及用于形成闭孔和网状块体金属玻璃焊料的块体金属玻璃的发泡焊料冶金。
下面的说明包括只用于描述性目的而可视为限制的术语,如上部、下部、第一、第二等。本文所述设备或物品的实施例可在多个位置和定向中制造、使用或发运。术语“管芯”和“芯片”一般指物理对象是通过各种工艺操作转换成所需集成电路设备的基本工件。管芯通常从晶片分离而成,并且晶片可由半导体、非半导体或半导体与非半导体材料的组合形成。板一般是充当用于管芯的安装衬底的树脂浸渍光纤玻璃结构。
公开内容涉及至少发泡电连接或BMG电连接之一。块体金属玻璃基本上是金属成分,但不形成象常规金属一样的金属晶格。在一个实施例中,电连接是接合垫。在一个实施例中,电连接是电凸块。在一个实施例中,电连接是金属化互连。在一个实施例中,电连接是迹线。在此公开内容通篇中,宏观结构构型中的电连接可包括至少发泡电连接或BMG电连接之一。
在一个实施例中,电连接是BMG材料。在一个实施例中,BMG是含锆BMG类型。在一个实施例中,BMG是含锆铝BMG类型。选定但非详尽的含锆铝BMG包括ZrAlCuO、ZrAlNiCuO、ZrTiAlNiCuO、ZrAlNiCu(Cr,Mo)、ZrAlNiCu(Ag,Pd,Au,Pt)、ZrAlNiCu(Nb,Ta,V)、ZrAlNi(Ag,Pd,Au,Pt)、ZrAlCuPd和ZrAlCu(Pd,Au,Pt)。表1示出锆铝BMG实施例的示例。
表1-ZrAl BMG
在一个实施例中,BMG是含锆镍BMG类型。选定但非详尽的含锆镍BMG包括ZrNi(Fe,Co)和ZrNi(Pd,Au,Pt)。表2示出锆镍BMG实施例的示例。
表2-ZrNi BMG
示例 成分
10 Zr70Ni10(Fe,Co)20
11 Zr70Ni20(Pd,Au,Pt)10
在一个实施例中,BMG是含锆铂族BMG类型。选定但非详尽的含锆铂族BMG包括ZrCuPd、ZrPd和ZrPt。表3示出锆铂族BMG实施例的示例。
表3-ZrPt BMG
在一个实施例中,BMG是含铪BMG类型。选定但非详尽的含铪BMG包括HfAlNiCu、HfAlNiCuPd、HfAlNiAg和HfCu(Pd,Pt)。表4示出锆铪BMG实施例的示例。
表4-ZrHfBMG
在一个实施例中,BMG是含钛BMG类型。选定但非详尽的含钛BMG包括TiZrNi和TiZrNiCu。表5示出含锆BMG实施例的示例。
表5-Ti BMG
示例 成分
19 Ti45Zr38Ni17
20 Ti60Zr15Ni15Cu10
在一个实施例中,BMG是含铁BMG类型。选定但非详尽的含铁BMG包括Fe(Nb,W,Ta)B。含铁BMG实施例的一个示出示例(示例21)是Fe60(Nb,W,Ta)10B30。
在一个实施例中,至少两个上述BMG类型的组合用作电连接。在一个实施例中,至少三个上述BMG类型的组合用作电连接。在一个实施例中,至少四个上述BMG类型的组合用作电连接。在一个实施例中,至少五个上述BMG类型的组合用作电连接。
在一个实施例中,电连接是第一材料的发泡BMG,并且发泡BMG的相对密度是从大约0.1到大约0.9范围内。“相对密度”是指发泡BMG的密度与同一材料的实心BMG进行比较。通过检查象如在参考材料中可找到的合金和纯金属等材料的经典物理学密度,或通过阿基米德方法,可断定同一材料的实心BMG。
在一个实施例中,第一材料的发泡金属具有大约0.5的相对密度。在一个实施例中,第一材料的发泡金属具有大约0.6的相对密度。在一个实施例中,第一材料的发泡金属具有大约0.7的相对密度。在一个实施例中,第一材料的发泡金属具有大约0.8的相对密度。
IC封装中抗震击的一种方式是提高电连接中BMG的杨氏模量(m)。在IC封装测试中执行的震击载荷条件下,对于动态和冲击载荷两者,应变速率可以是大约为每秒102。在此应变速率下的实施例中,发泡BMG电连接实施例展示了所谓的应变速率敏感性。换而言之,发泡BMG电连接实施例随着应变速率的增大而变得更强。嵌入式发泡BMG电连接材料要在操作期间经受高同系温度时,应变速率敏感性变得很重要。例如,在m大约为0.2时,每秒102的应变速率将屈服强度增大到准静态屈服强度的大约250%。由于有了此发现,塑料变形被抑制,并且发泡BMG电连接实施例的应力应变行为积极地偏离震击载荷条件下的准静态屈服强度中金属的典型应力应变行为。通过使用发泡BMG电连接,模量进一步改进以使封装甚至可更强地抗热震击和物理震击。
现在参照附图,其中,类似的结构将提供有类似的后缀标号。为最清晰地示出各种实施例的结构,本文包括的附图是集成电路结构的图示。因此,例如在显微照片中制造结构的实际外观可显示不同,但仍包含所示实施例的基本结构。另外,附图只显示理解所示实施例所需的结构。技术领域熟知的另外的结构未包括以保持附图的清晰性。
图1是根据实施例,包括发泡接合垫的物品的垂直横截面。物品100包括衬底110。在一个实施例中,衬底110是IC管芯。在一个实施例中,衬底110是诸如板或内插器(interposer)等安装衬底。物品100也包括作为宏观结构电连接的接合垫112,接合垫112布置在衬底110之上或之中,通过焊接掩膜116显露。如图所示,接合垫112嵌在衬底110内,但根据给定的选定应用,接合垫112也可布置在衬底110的表面上。接合垫112示为是发泡的,以便泡沫泡孔(foam cell)114微观结构电连接示为封闭在接合垫112内。在一个实施例中,泡沫泡孔114是闭孔泡沫。在一个实施例中,泡沫泡孔114是开孔泡沫,这也称为网状泡沫。
在一个实施例中,接合垫112不是发泡的,但包括如在此公开内容中所述的至少一种BMG类型。在一个实施例中,接合垫112是发泡的,并且它包括如在此公开内容中所述的至少一种BMG类型。
物品100也包括根据一个实施例的电凸块118宏观结构电连接。在一个实施例中,电凸块118是发泡微观结构电连接。在一个实施例中,电连接118是BMG。在一个实施例中,电连接118是发泡且是BMG。以下文中,诸如接合垫和凸块等结构要理解为宏观结构电连接构型,并且发泡实施例要理解为微观结构电连接构型。在一个实施例中,电凸块118是第一电凸块,并且它与第二电凸块间隔分开,间距小于或大约为0.8毫米。在一个实施例中,电凸块118的宏观结构构型是管芯侧电凸块,并且衬底110是倒装芯片。在一个实施例中,电凸块118的宏观结构构型是板侧电凸块,并且衬底110是诸如内插器等安装衬底。
图2是根据实施例,包括发泡接合指和迹线的物品200的垂直横截面。物品200包括衬底210。在一个实施例中,衬底210是IC管芯。在一个实施例中,衬底210是诸如板或内插器等安装衬底。物品200也包括迹线和显露的接合指212,接合指212布置在衬底210之上或之中,通过焊接掩膜216显露。如图所示,迹线和显露的接合指212嵌在衬底210内,但根据给定的选定应用,接合指212的显露部分也可布置在衬底210的表面上。迹线和显露的接合指212示为发泡的,以便泡沫泡孔214示为封闭在迹线和显露的接合指212内。在一个实施例中,泡沫泡孔214是闭孔泡沫。在一个实施例中,泡沫泡孔214是开孔泡沫,这也称为网状泡沫。
在一个实施例中,迹线和显露的接合指212不是发泡,但包括如在此公开内容中所述的至少一种BMG类型。在一个实施例中,迹线和显露的接合指212是发泡,并且它包括如在此公开内容中所述的至少一种BMG类型。
物品200也包括根据一个实施例的电凸块218。在一个实施例中,电连接218是发泡。在一个实施例中,电连接218是BMG。在一个实施例中,电连接218是发泡且是BMG。
图3是根据实施例,包括发泡接合垫和电凸块的物品300的垂直横截面。物品300包括衬底310。在一个实施例中,衬底310是IC管芯。在一个实施例中,衬底310是诸如板或内插器等安装衬底。物品300也包括接合垫312,接合垫312布置在衬底310之上或之中,通过焊接掩膜316显露。如图所示,接合垫312嵌在衬底310内,但根据给定的选定应用,接合垫312也可布置在衬底310的表面上。接合垫312示为是发泡,以便垫泡沫泡孔(pad foam cell)314示为封闭在接合垫312内。在一个实施例中,垫泡沫泡孔314是闭孔泡沫。在一个实施例中,垫泡沫泡孔314是开孔泡沫,这也称为网状泡沫。
在一个实施例中,接合垫312不是发泡,但包括如在此公开内容中所述的至少一种BMG类型。在一个实施例中,接合垫312是发泡,并且它包括如在此公开内容中所述的至少一种BMG类型。
物品300也包括根据一个实施例的发泡电凸块318。发泡电凸块318示为带有凸块泡沫泡孔320,凸块泡沫泡孔320具有比示为垫泡沫泡孔314更大的泡沫泡孔大小。在一个实施例中,泡沫大小相对相同。在一个实施例中,凸块泡沫泡孔320大小比垫泡沫泡孔314小。
图4是根据实施例,包括发泡金属化互连的物品400的垂直横截面。物品400示为布置在安装衬底410上的引线接合管芯422。物品400也包括布置在安装衬底410之上或之中的安装衬底接合垫412。
如图所示的金属化互连424示为根据一个实施例的发泡金属。在一个实施例中,金属化互连424不是发泡,但包括如在此公开内容中所述的至少一种BMG类型。在一个实施例中,金属化互连424是如在此公开内容中所述的至少一种BMG类型的发泡BMG。
接合线426将引线接合管芯422耦合到安装衬底410。接合线426在管芯接合垫428与安装衬底接合垫412之间形成电耦合。在一个实施例中,安装衬底410还可通过诸如用于在板上安装的安装衬底电凸块430进一步耦合。在一个实施例中,安装衬底电凸块430是发泡的。在一个实施例中,安装衬底电凸块430是如在此公开内容中所述的BMG类型。在一个实施例中,安装衬底电凸块430是如在此公开内容中所述的发泡BMG类型。
在一个实施例中,物品400在诸如无线通信器等手持式装置中使用。由于有了BMG实施例或发泡互连实施例的至少一种,物品400可承受相当大的物理震击。
图5是根据实施例,包括发泡接合垫和电凸块,也包括作为焊料壳中发泡焊料核的电凸块的物品500的垂直横截面。物品500包括衬底510。在一个实施例中,衬底510是IC管芯。在一个实施例中,衬底510是诸如板或内插器等安装衬底。物品500也包括接合垫512,接合垫512布置在衬底510之上或之中,通过焊接掩膜516显露。如图所示,接合垫512嵌在衬底510内,但根据给定的选定应用,接合垫512也可布置在衬底510的表面上。接合垫512示为是发泡,以便接合垫泡沫泡孔514示为封闭在接合垫512内。在一个实施例中,泡沫泡孔514是闭孔泡沫。在一个实施例中,泡沫泡孔514是开孔泡沫,这也称为网状泡沫。
在一个实施例中,焊料凸块518示为带有发泡焊料核532和焊料壳534。在一个实施例中,焊料凸块518展示了在大约0.2与大约0.7之间范围的模量。
在一个实施例中,焊料壳534是发泡焊料核532的金属互化物衍生物。发泡焊料核532包括凸块泡沫泡孔533。金属互化物衍生物可以是在诸如重熔等加工条件下与发泡焊料核532混合以形成金属互化物材料的任何成分。在一个实施例中,发泡焊料核532是BMG。在一个实施例中,焊料壳534是BMG。在一个实施例中,发泡焊料核532和焊料壳534都是BMG。
在一个实施例中,发泡焊料核532具有为一的直径536,并且焊料壳534的厚度538范围是从大约一的1%到大约一的100%。在一个实施例中,焊料壳534具有范围从大约一的5%到大约一的20%之间的厚度。在一个实施例中,焊料壳534具有范围从大约一的6%到大约一的19%之间的厚度。
在一个实施例中,焊料凸块518的大小及因此发泡焊料核532和焊料壳534的大约尺寸可通过接合垫512的大小断定。在一个实施例中,接合垫512是大约106微米(μm)。在一个实施例中,发泡焊料核532的直径536和焊料壳534的厚度538的两倍也大约为106微米。其它尺寸可根据应用而选定
图6是根据实施例,包括布置在焊料衬底第二材料上的发泡焊料核第一材料的物品600的垂直横截面。物品600包括安装衬底610。在一个实施例中,安装衬底610是IC管芯。在一个实施例中,安装衬底610是诸如板或内插器等安装衬底。物品600也包括布置在衬底610之上或之中的接合垫612。如图所示,接合垫612嵌在衬底610内,但根据给定的选定应用,接合垫612也可布置在衬底610的表面上。接合垫612示为是发泡,以便接合泡沫泡孔614示为封闭在接合垫612内。在一个实施例中,泡沫泡孔614是闭孔泡沫。在一个实施例中,泡沫泡孔614是开孔泡沫,这也称为网状泡沫。
发泡焊料核632第一材料安装在焊料衬底634第二材料上。在一个实施例中,发泡焊料核632第一材料是BMG。发泡焊料核632包括凸块泡沫泡孔633。在一个实施例中,焊料衬底634第二材料是BMG。在一个实施例中,焊料衬底634第二材料是比发泡焊料核632第一材料更密集的重熔焊料。在一个实施例中,焊料衬底634第二材料的重熔在低于发泡焊料核632第一材料的液线温度的温度执行。
发泡焊料核632第一材料以示意图方式示出,并且根据一个实施例,它可以是多泡孔发泡焊料或网状发泡焊料。在一个实施例中,发泡焊料核632第一材料是BMG。在一个实施例中,接合垫612展示了电镀工艺的特征的长形柱状颗粒形态。
在一个实施例中,上部衬底642和上部接合垫644位于根据一个实施例的发泡焊料核632第一材料的上方。在一个实施例中,上部衬底642是IC管芯。在一个实施例中,上部衬底642是诸如印制配线板等安装衬底。在一个实施例中,发泡焊料核632第一材料展示了在大约0.2与大约0.7之间范围的模量。
在一个实施例中,发泡焊料核632第一材料具有范围从大约25μm到大约200μm的直径636。在一个实施例中,发泡焊料核632第一材料具有大约106μm的直径636。在一个实施例中,发泡焊料核632第一材料的大小可通过接合垫612的大小断定。在一个实施例中,接合垫612是大约106μm。其它尺寸可根据应用而选定。
在一个实施例中,重熔前的焊料衬底634第二材料包括具有大小范围从大约2nm到50nm的颗粒。在一个实施例中,焊料衬底634第二材料包括具有大小范围从大约10nm到大约30nm的颗粒。在一个实施例中,焊料衬底634第二材料包括具有大小范围大约98%小于20nm的或等于大约20nm的颗粒。
在一个实施例中,焊料衬底634第二材料包括等于或低于大约400℃的熔解温度。根据金属类型和颗粒大小,焊料衬底634第二材料可具有在几百度的熔解温度的变化。
在焊料衬底634第二材料和发泡焊料核632第一材料属于不同金属或者不同合金时,金属间区域648可在其之间形成。
图7是根据实施例,形成发泡BMG的工艺示图700。加工开始是先混合发泡BMG前驱物711和可压缩气体713。在一个实施例中,发泡BMG前驱物711是金属微粒。在一个实施例中,可压缩气体713对发泡BMG前驱物的金属呈惰性。在一个实施例中,可压缩气体713是氩。
在图7中,发泡BMG前驱物711放置到金属凝固领域中熟知的罐体738中。随后对填充后的罐体738的处理是进行压缩以实现包含发泡BMG前驱物711和可压缩气体713的高压罐体739。在一个实施例中,通过在金属凝固领域中熟知的热等静压(HIP)而实现高压罐体739。在HIP后,在无相当大限制性外部压力的情况下,进一步加热高压罐体739,并且高压罐体739膨胀,使得在发泡BMG是多泡孔发泡BMG时,形成了包括金属室712和金属壁714的BMG泡沫710。备选,在HIP后,在无相当大限制性外部压力的情况下,进一步加热高压罐体739,并且高压罐体739膨胀,形成了包括在发泡BMG是网状发泡BMG时形成的金属节(metal ganglia)714'的金属泡沫710'。
在一个实施例中,正如在金属凝固领域中可理解的一样,未对填充后的罐体738进行HIP,而是先将其加热,以使发泡BMG前驱物711烧结。烧结不会使发泡BMG前驱物711完全重熔,而是使存在的两个发泡BMG前驱物711之间的触点740成核。发泡BMG前驱物711的第二次加热形成了BMG泡沫710,使得发泡BMG发生先烧结和第二次加热膨胀。在一个实施例中,先烧结实现了发泡BMG,使得金属泡沫710是多泡孔发泡BMG。备选,先加热实现发泡BMG,使得形成的金属泡沫710'具有金属节714'。
在一个实施例中,在无相当大外部加热的情况下,先凝固填充后的罐体738,第二次加热以使BMG前驱物711膨胀。在一个实施例中,第二次加热实现了发泡BMG,使得金属泡沫710是多泡孔发泡BMG。备选,第二次加热实现发泡BMG,使得形成的金属泡沫710'具有金属节714'。
其它技术可用于形成发泡BMG。在一个实施例中,如现有技术领域熟知的一样,使用了熔模铸造。在一个实施例中,使用了熔解加工及金属氢化物的分解,这形成了在发泡BMG中产生孔隙的气体。在一个实施例中,使用了利用金属氢化物分解的粉末加工。在一个实施例中,聚合物预发泡(polymer prefoam)用作成孔剂(voiding agent)暂时支撑结构,以便在发泡BMG固化(solidify)时支撑它,之后,聚合物预发泡被分离(driven off)。在一个实施例中,成孔剂是永久性的,并且它阻止在加工期间存在的BMG吸收性变湿。
在一个实施例中,金属粉末装入被去除气体并随后通过氩气加压的罐体中。该罐体进行HIP以凝固金属粉末。凝固后,加热罐体以通过HIP后的粉末中周围基质(matrix)的蠕变使滞留(entrapped)气膨胀。此技术可用于产生体积密度范围从大约0.6到大约0.8的多孔金属。孔的大小和分布可通过使用适当的气压、金属表面活性剂含量、加热时间、温度及其它参数而得到精确地控制。
在一个实施例中,在金属泡沫710或金属泡沫710'形成后,进一步处理金属泡沫(以下为“金属泡沫710”)以制备焊料凸块。在一个实施例中,先挤出金属泡沫710而不损害发泡质量,并且通过压头机切为分成短的部分的线,直至该线大致为立方体或实心柱状。发泡BMG的大致立方体或实心柱状段的处理包括滚磨以实现更具球形,或者在磨机中研磨(grind)。在一个实施例中,在滚磨机中完成大致立方体或实心柱状的发泡BMG的自磨。在一个实施例中,在滚磨机中存在第一数量的研磨介质,如陶瓷球时,大致立方体或实心柱状的发泡BMG的半自磨在滚磨机中完成。在一个实施例中,在滚磨机中存在大于第一数量的研磨介质的第二数量的研磨介质时,大致立方体或实心柱状的发泡BMG的磨机研磨在滚磨机中完成。在一个实施例中,在先研磨发泡BMG以实现球形后,在更不极度(less extreme)的滚磨环境中进行表面磨光。
一旦发泡BMG核或发泡BMG球体形成,根据一个实施例,焊料便可通过电镀涂在发泡BMG上。
图8是根据各种实施例,描述工艺流程800的流程图。
在810,工艺包括在带有混合气体的罐体中形成发泡BMG前驱物。
在820,工艺包括压(press)罐体。工艺可包括等静压或HIP。
在830,工艺包括在某些条件下膨胀罐体以使发泡BMG前驱物形成多泡孔泡沫或网状泡沫。在一个实施例中,工艺在830终止。
在840,工艺包括使发泡BMG金属形成为焊料凸块或发泡长形金属垫。
在850,工艺实施例包括在接合垫上形成中间焊料层。在一个实施例中,中间焊料层是BMG预发泡。
在852,工艺包括在中间焊料层上形成诸如发泡BMG凸块或发泡BMG长形垫的发泡焊料。
在854,工艺包括重熔BMG金属层以接合到发泡BMG。在一个实施例中,工艺在854终止。
图9是根据实施例,形成多孔BMG电连接900的工艺示图。加工开始是先混合发泡BMG前驱物911和发泡剂913。在一个实施例中,发泡BMG前驱物911是具有平均颗粒直径范围从大约5nm到大约50nm的金属微粒。在一个实施例中,发泡BMG前驱物911是具有平均颗粒直径范围从大约10nm到大约40nm的金属微粒。在一个实施例中,发泡BMG前驱物911是具有平均颗粒直径范围从大约15nm到大约30nm的金属微粒。在一个实施例中,发泡BMG前驱物911是具有平均颗粒直径大约99%通过20nm和大约98%大于大约5nm的金属微粒。
在一个实施例中,发泡剂913是金属氢化物,如氢化钛(TiH2)。在一个实施例中,发泡剂913是金属氢化物,如氢化锆(ZrH2)。在一个实施例中,发泡剂913是金属氢化物,如氢化铪(HfH2)。在一个实施例中,发泡剂913是表示为RH2的耐熔金属氢化物。在一个实施例中,发泡剂913大致匹配发泡焊料前驱物的颗粒大小分布。在一个实施例中,发泡BMG前驱物911包括有利于发泡BMG形成的金属表面活性剂。
在图9中,如在金属粉碎领域所熟知的一样,发泡BMG前驱物911和发泡剂913或是在固态情况下的成孔剂被放入混合容器938中。随后,对混合容器938的操作是混合发泡BMG前驱物911和发泡剂913以实现前驱物发泡剂混合物。在下文中,“发泡剂”和“成孔剂”将表示为“发泡剂”,但除非明确指明,否则指任一项。
在一个实施例中,BMG前驱物发泡剂混合物在轴向挤压模(axial-compression die)940中挤压。挤压模例如在粉末冶金凝固领域中使用。砧座942容纳BMG前驱物发泡剂混合物944并通过通条(ramrod)946压入砧座942中。轴压后的结果是轴压BMG球珠(pellet)948。
在一个实施例中,BMG前驱物发泡剂混合物944在挤出模(extrusion die)950中挤压。挤出例如在粉末冶金挤出领域中已知。BMG前驱物发泡剂混合物944由通条946压入挤出模950中。挤出后的结果是挤出的BMG球珠952。
在一个实施例中,轴压BMG球珠948或挤出BMG球珠952是要进行诸如滚动等进一步处理以实现轧制薄板材954或956的BMG前驱物。在一个实施例中,BMG球珠948或952或BMG轧制薄板材954或956被冲压到(stamped into)BMG前驱物的BMG球珠948或952中以做进一步处理。
从压的或挤出的球珠处理为BMG前驱物的大致立方体或实心柱状段包括滚磨以实现更具球形,或者在磨机中研磨。在一个实施例中,BMG前驱物的自磨在滚磨机中完成。在一个实施例中,在滚磨机中存在第一数量的研磨介质,如陶瓷球时,BMG前驱物的半自磨在滚磨机中完成。在一个实施例中,在滚磨机中存在大于第一数量的研磨介质的第二数量的研磨介质时,BMG前驱物的磨机研磨在滚磨机中完成。在一个实施例中,在先研磨BMG前驱物以实现球形后,在更不极度的滚磨环境中进行表面磨光。
在使BMG前驱物形成所需形状后,通过加热进一步处理所需形状以实现BMG 958。
图10是根据实施例,加工BMG前驱物的工艺流程图1000。
在1010,工艺包括混合BMG前驱物和发泡剂。
在1020,工艺包括将BMG前驱物压紧(compact)成发泡BMG前驱物。
在1030,工艺包括将发泡BMG前驱物置于安装衬底和管芯之一上。
在1040,工艺包括膨胀发泡BMG焊料以实现BMG。
图11是根据实施例,示出计算系统的剖面透视图1100。发泡焊料凸块、发泡BMG长形垫或BMG球体的一个或多个上述实施例可在诸如图11的计算系统1100等计算系统中利用。在下文,上述任何发泡BMG电连接、发泡BMG长形垫电连接或BMG球体或与任何其它实施例的组合称为实施例构型。
计算系统1100例如包括密封在封装1110中的至少一个处理器(未示出)、数据存储系统1112、诸如键盘1114等至少一个输入装置及诸如监视器等至少一个输出装置。计算系统1100包括处理数据信号的处理器,并可包括例如可从Intel Corporation得到的微处理器。除键盘1114外,计算系统1100例如可包括诸如鼠标1118等另一用户输入装置。
为便于公开,包含如所述要求保护主题的组件的计算系统1100可包括利用微电子装置系统的任何系统,微电子装置系统例如可至少包括耦合到诸如动态随机存取存储器(DRAM)、聚合物存储器、闪存或相变存储器等数据储存器(storage)的BMG凸块、发泡BMG长形垫或BMG球体实施例之一。在此实施例中,通过耦合到处理器,实施例耦合到这些功能的任何组合。然而,在一个实施例中,此公开内容中所述的实施例构型耦合到任何这些功能。对于一个示例实施例,数据储存器包括管芯上的嵌入式DRAM高速缓存。另外,在一个实施例中,耦合到处理器(未示出)的实施例构型是具有耦合到DRAM高速缓存的数据储存器112的实施例构型的系统一部分。另外,在实施例中,实施例构型耦合到数据储存器1112。
在一个实施例中,计算系统1100也可包括包含数字信号处理器(DSP)、微控制器、专用集成电路(ASIC)或微处理器的管芯。在此实施例中,通过耦合到处理器,实施例构型耦合到这些功能的任何组合。对于一个示例实施例,DSP(未示出)是芯片集的一部分,芯片集可包括作为板1120上芯片集的单独部分的独立处理器和DSP。在此实施例中,实施例构型耦合到DSP,并且耦合到封装1110中处理器的单独实施例构型可存在。另外,在一个实施例中,实施例构型耦合到与封装1110安装在同一板1120上的DSP。现在可理解,实施例构型可如关于计算系统1100所述的方式组合,与如通过在此公开内容内发泡BMG凸块、发泡BMG长形垫或BMG焊料球体的各种实施例及其等效物所述的实施例构型组合。
图12是根据实施例的计算系统的示图。如图所示的电子系统1200可体现如图11所示的计算系统1100,但电子系统以示意图方式示出。电子系统1200包含诸如图3-6所示IC封装等至少一个电子装配1210。在一个实施例中,电子系统1200是包括系统总线1220以电耦合电子系统1200的各种组件的计算机系统。系统总线1220是根据各种实施例的单总线或总线的任何组合。电子系统1200包括向集成电路1210提供电能的电压源1230。在一些实施例中,电压源1230通过系统总线1220向集成电路1210供应电流。
根据一个实施例,集成电路1210电耦合到系统总线1220,并且包括任何电路或电路组合。在一个实施例中,集成电路1210包括可以为任何类型的处理器1212。在本文中使用时,处理器1212指任何类型的电路,诸如但不限于微处理器、微控制器、图形处理器、数字信号处理器或另一处理器。可包括在集成电路1210中的其它类型电路是定制电路或ASIC,如在诸如蜂窝电话、寻呼器、便携式计算机、双向无线电通信和类似电子系统等无线装置中使用的通信电路1214。在一个实施例中,集成电路1210包括诸如SRAM等管芯上存储器1216。在一个实施例中,处理器1210包括诸如嵌入式DRAM(eDRAM)等管芯上存储器1216。
在一个实施例中,电子系统1200也包括外部存储器1240,外部存储器1240又可包括诸如RAM形式的主存储器1242等适用特定应用的一个或多个存储器元件、一个或多个硬盘驱动器1244和/或处理诸如软盘、压缩盘(CD)、数字视频磁盘(DVD)、闪存钥匙(flash memorykeys)及领域中熟知的其它可移动媒体等可移动媒体1246的一个或多个驱动器。
在一个实施列中,电子系统1200也包括显示装置1250和音频输出1260。在一个实施例中,电子系统1200包括控制器1270,如键盘、鼠标、轨迹球、游戏控制器、麦克风、话音识别装置或输入信息到电子系统1200中的任何其它装置。
如本文中所示,集成电路1210可在多个不同实施例中实现,包括电子封装、电子系统、计算机系统、制造集成电路的一种或多种方法及制造包括如在本文中各种实施例及其领域识别等效物中所述的集成电路和发泡BMG电子连接实施例的电子装配的一种或多种方法。现在可理解,元素、材料、几何形状、尺寸和操作顺序全部可改变以适合特定的封装要求。
现在可理解,在此公开内容中所述的BMG电连接实施例可应用到传统计算机外的装置和设备。例如,管芯可封装有实施例构型,并且放置在诸如无线通信器等便携式装置或诸如个人数字助理或诸如此类等手持装置中。另一示例是可封装有实施例构型,并放置在诸如汽车、机车、水运工具、航空器或航天器等运载工具中的管芯。
本文提供了摘要以遵从要求提供摘要以允许读者快速确定本技术公开内容本质和要点的37C.F.R.§1.72(b)。它是在将不用于解释或限制权利要求书范围或含意的条件下提交。
在上述具体实施方式部分,各种特性组合在单个实施例中组合在一起以便简化公开内容。此公开方法不可理解为反映本发明的所述实施例需要比每个权利要求项明确所述更多特性的用意。相反,如下述权利要求所反映的一样,发明的主题依赖比单个公开实施例所有特性更少的特性。因此,下述权利要求在此包含到具体实施方式中,并且每个权利要求项本身保持做为单独的优选实施例。
本领域的技术人员将容易理解,在不脱离如所附权利要求中所述的本发明原理和范围的情况下,可对已描述和示出以便解释本发明性质的部件和方法阶段的细节、材料和布置进行各种其它更改。
Claims (10)
1.一种用于集成电路制造的物品,包括:
块体金属玻璃,其中所述块体金属玻璃在从电凸块、金属化互连、迹线和接合垫中选择的宏观结构构型中,其中,在所述接合垫上形成中间焊料层,所述中间焊料层是块体金属玻璃预发泡。
2.如权利要求1所述的物品,其中所述块体金属玻璃具有从多泡孔泡沫和网状泡沫选择的微观结构发泡构型。
3.如权利要求1所述的物品,其中所述块体金属玻璃是从ZrAlCuO、ZrAlNiCuO、ZrAlNiCuO、ZrTiAlNiCuO、ZrAlNiCu(Cr,Mo)、ZrAlNiCu(Ag,Pd,Au,Pt)、ZrAlNiCu(Nb,Ta,V)、ZrAlNi(Ag,Pd,Au,Pt)、ZrAlCuPd、ZrNi(Fe,Co)、ZrNi(Pd,Au,Pt)、ZrCuPd、ZrPd、ZrPt或其组合中选择的锆合金。
4.如权利要求1所述的物品,其中所述块体金属玻璃是从HfAlNiCu、HfAlNiCuPd、HfAlNiAg、HfCu(Pd,Pt)或其组合中选择的铪合金。
5.如权利要求1所述的物品,其中所述块体金属玻璃是从TiZrNi、TiZrNiCu或其组合中选择的钛合金。
6.如权利要求1所述的物品,其中所述块体金属玻璃是铁合金。
7.如权利要求1所述的物品,其中所述块体金属玻璃从锆合金、铪合金、钛合金、铁合金或其组合中选择。
8.如权利要求1所述的物品,其中所述宏观结构构型是具有凸块直径在大约1μm到大约300μm范围的电凸块。
9.如权利要求1所述的物品,其中所述宏观结构构型是电凸块,包括:
发泡焊料核第一材料;以及
焊料衬底第二材料,所述焊料衬底第二材料上布置有所述发泡焊料核第一材料。
10.如权利要求1所述的物品,其中所述宏观结构构型是电凸块,包括:
发泡焊料核第一材料;以及
焊料壳第二材料,所述焊料壳第二材料覆盖所述发泡焊料核第一材料。
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CN106876353A (zh) * | 2015-12-10 | 2017-06-20 | 南茂科技股份有限公司 | 凸块结构与其制作方法 |
CN106876353B (zh) * | 2015-12-10 | 2019-03-19 | 南茂科技股份有限公司 | 凸块结构与其制作方法 |
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Also Published As
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US20070290339A1 (en) | 2007-12-20 |
WO2007149737A3 (en) | 2008-02-21 |
WO2007149737A2 (en) | 2007-12-27 |
TWI351086B (en) | 2011-10-21 |
JP4947817B2 (ja) | 2012-06-06 |
JP5182682B2 (ja) | 2013-04-17 |
US7705458B2 (en) | 2010-04-27 |
CN101473424A (zh) | 2009-07-01 |
KR101205664B1 (ko) | 2012-11-27 |
JP2012164984A (ja) | 2012-08-30 |
TW200818431A (en) | 2008-04-16 |
JP2009533886A (ja) | 2009-09-17 |
KR20090019852A (ko) | 2009-02-25 |
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