CN104335283A - 用于同时提供设置及复位电压的设备及方法 - Google Patents

用于同时提供设置及复位电压的设备及方法 Download PDF

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Publication number
CN104335283A
CN104335283A CN201380026853.6A CN201380026853A CN104335283A CN 104335283 A CN104335283 A CN 104335283A CN 201380026853 A CN201380026853 A CN 201380026853A CN 104335283 A CN104335283 A CN 104335283A
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CN
China
Prior art keywords
voltage
memory cells
reset
circuit
different
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380026853.6A
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English (en)
Chinese (zh)
Inventor
马尔科-多梅尼科·蒂布尔齐
朱利奥-朱塞佩·马罗塔
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Micron Technology Inc
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Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to CN202010488121.0A priority Critical patent/CN111640464B/zh
Publication of CN104335283A publication Critical patent/CN104335283A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0085—Write a page or sector of information simultaneously, e.g. a complete row or word line
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
CN201380026853.6A 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法 Pending CN104335283A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010488121.0A CN111640464B (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/445,577 US9053784B2 (en) 2012-04-12 2012-04-12 Apparatuses and methods for providing set and reset voltages at the same time
US13/445,577 2012-04-12
PCT/US2013/036209 WO2013155326A1 (en) 2012-04-12 2013-04-11 Apparatuses and methods for providing set and reset voltages at the same time

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010488121.0A Division CN111640464B (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法

Publications (1)

Publication Number Publication Date
CN104335283A true CN104335283A (zh) 2015-02-04

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201380026853.6A Pending CN104335283A (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法
CN202010488121.0A Active CN111640464B (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法

Family Applications After (1)

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Country Status (7)

Country Link
US (3) US9053784B2 (https=)
EP (1) EP2837000B1 (https=)
JP (1) JP2015518230A (https=)
KR (1) KR101984681B1 (https=)
CN (2) CN104335283A (https=)
TW (1) TWI585763B (https=)
WO (1) WO2013155326A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104794261A (zh) * 2015-03-27 2015-07-22 山东华芯半导体有限公司 一种具有复位功能的阻变型随机存储器模型及存储方法
US9570172B2 (en) 2012-04-12 2017-02-14 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
CN108735249A (zh) * 2017-04-21 2018-11-02 瞻诚科技股份有限公司 内存装置及其制作方法

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KR102151183B1 (ko) * 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
GB2545264B (en) * 2015-12-11 2020-01-15 Advanced Risc Mach Ltd A storage array
JP6723402B1 (ja) * 2019-02-28 2020-07-15 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型ランダムアクセスメモリ

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US20110235391A1 (en) * 2010-03-25 2011-09-29 Qualcomm Incorporated Reference Cell Write Operations At A Memory
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US20090135637A1 (en) * 2007-10-05 2009-05-28 Kabushiki Kaisha Toshiba Resistance change memory device
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570172B2 (en) 2012-04-12 2017-02-14 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
US9711218B2 (en) 2012-04-12 2017-07-18 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
CN104794261A (zh) * 2015-03-27 2015-07-22 山东华芯半导体有限公司 一种具有复位功能的阻变型随机存储器模型及存储方法
CN108735249A (zh) * 2017-04-21 2018-11-02 瞻诚科技股份有限公司 内存装置及其制作方法

Also Published As

Publication number Publication date
CN111640464A (zh) 2020-09-08
KR101984681B1 (ko) 2019-05-31
WO2013155326A1 (en) 2013-10-17
KR20150002759A (ko) 2015-01-07
US9711218B2 (en) 2017-07-18
CN111640464B (zh) 2023-09-29
JP2015518230A (ja) 2015-06-25
US20170154676A1 (en) 2017-06-01
EP2837000A1 (en) 2015-02-18
US9053784B2 (en) 2015-06-09
EP2837000A4 (en) 2015-07-08
EP2837000B1 (en) 2020-03-25
TWI585763B (zh) 2017-06-01
US20150269999A1 (en) 2015-09-24
US9570172B2 (en) 2017-02-14
TW201403604A (zh) 2014-01-16
US20130272053A1 (en) 2013-10-17

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Application publication date: 20150204

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