CN104078391B - 湿式蚀刻装置 - Google Patents

湿式蚀刻装置 Download PDF

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Publication number
CN104078391B
CN104078391B CN201410218651.8A CN201410218651A CN104078391B CN 104078391 B CN104078391 B CN 104078391B CN 201410218651 A CN201410218651 A CN 201410218651A CN 104078391 B CN104078391 B CN 104078391B
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China
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aqueous solution
phosphate aqueous
phosphoric acid
concentration
acid aqueous
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Chinese (zh)
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CN104078391A (zh
Inventor
小林信雄
黑川祯明
滨田晃
滨田晃一
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Shibaura Machine Co Ltd
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Shibaura Machine Co Ltd
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51599576&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN104078391(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shibaura Machine Co Ltd filed Critical Shibaura Machine Co Ltd
Priority to CN201710207544.9A priority Critical patent/CN107452649B/zh
Publication of CN104078391A publication Critical patent/CN104078391A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201410218651.8A 2013-03-29 2014-03-28 湿式蚀刻装置 Active CN104078391B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710207544.9A CN107452649B (zh) 2013-03-29 2014-03-28 湿式蚀刻装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013073721 2013-03-29
JP2013-073721 2013-03-29
JP2014045275A JP6302708B2 (ja) 2013-03-29 2014-03-07 ウェットエッチング装置
JP2014-045275 2014-03-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710207544.9A Division CN107452649B (zh) 2013-03-29 2014-03-28 湿式蚀刻装置

Publications (2)

Publication Number Publication Date
CN104078391A CN104078391A (zh) 2014-10-01
CN104078391B true CN104078391B (zh) 2017-09-22

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ID=51599576

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CN201410218651.8A Active CN104078391B (zh) 2013-03-29 2014-03-28 湿式蚀刻装置
CN201710207544.9A Active CN107452649B (zh) 2013-03-29 2014-03-28 湿式蚀刻装置

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Country Status (5)

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US (1) US20140290859A1 (https=)
JP (1) JP6302708B2 (https=)
KR (4) KR101596119B1 (https=)
CN (2) CN104078391B (https=)
TW (4) TWI810572B (https=)

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JP6903446B2 (ja) * 2016-03-07 2021-07-14 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
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CN107316825A (zh) * 2016-04-27 2017-11-03 盟立自动化股份有限公司 湿式蚀刻装置
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KR102759372B1 (ko) * 2019-01-08 2025-01-24 삼성전자주식회사 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법
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JP6843173B2 (ja) * 2019-03-29 2021-03-17 東京エレクトロン株式会社 基板処理装置、および基板処理方法
CN114127908B (zh) * 2019-07-25 2025-01-10 东京毅力科创株式会社 基板处理装置和基板处理方法
JP7412134B2 (ja) * 2019-11-01 2024-01-12 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7516742B2 (ja) * 2019-11-05 2024-07-17 東京エレクトロン株式会社 基板を処理する装置、処理ガスを濃縮する装置、及び基板を処理する方法
CN110993614B (zh) * 2019-11-27 2022-06-10 深圳市华星光电半导体显示技术有限公司 显示面板制备装置及方法
CN111106041A (zh) * 2019-12-10 2020-05-05 上海华力集成电路制造有限公司 湿法刻蚀机台及湿法刻蚀药液的回收方法
TW202134174A (zh) * 2020-02-12 2021-09-16 日商東京威力科創股份有限公司 磷酸處理液的再生裝置、基板處理裝置、磷酸處理液的再生方法及基板處理方法
JP7504636B2 (ja) * 2020-03-24 2024-06-24 芝浦メカトロニクス株式会社 処理液製造装置、基板処理装置、処理液製造方法及び基板処理方法
CN114195245A (zh) * 2020-09-02 2022-03-18 中国科学院微电子研究所 腐蚀液回收再利用装置及方法
KR102670179B1 (ko) * 2020-09-09 2024-05-28 가부시키가이샤 스크린 홀딩스 기판 처리 방법, 및 기판 처리 장치
KR102715366B1 (ko) 2020-12-18 2024-10-10 세메스 주식회사 처리액 공급 장치 및 처리액 공급 방법
KR102583556B1 (ko) * 2021-01-07 2023-10-10 세메스 주식회사 처리액 공급 장치 및 처리액 공급 장치의 고형 제거 방법
JP7588517B2 (ja) * 2021-01-29 2024-11-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法
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Publication number Publication date
TW201724250A (zh) 2017-07-01
TW202029329A (zh) 2020-08-01
KR102253286B1 (ko) 2021-05-20
US20140290859A1 (en) 2014-10-02
KR101596119B1 (ko) 2016-02-19
KR102062749B1 (ko) 2020-01-06
TWI739355B (zh) 2021-09-11
TWI810572B (zh) 2023-08-01
CN104078391A (zh) 2014-10-01
KR101687924B1 (ko) 2016-12-19
KR20160006142A (ko) 2016-01-18
TW201448020A (zh) 2014-12-16
KR20140118868A (ko) 2014-10-08
KR20160147239A (ko) 2016-12-22
KR20190142305A (ko) 2019-12-26
JP2014209581A (ja) 2014-11-06
CN107452649A (zh) 2017-12-08
TWI692024B (zh) 2020-04-21
TWI660419B (zh) 2019-05-21
TW202135158A (zh) 2021-09-16
JP6302708B2 (ja) 2018-03-28
CN107452649B (zh) 2020-10-20

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