CN104054328B - 半导体装置、固态图像感测装置和相机系统 - Google Patents

半导体装置、固态图像感测装置和相机系统 Download PDF

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Publication number
CN104054328B
CN104054328B CN201280050495.8A CN201280050495A CN104054328B CN 104054328 B CN104054328 B CN 104054328B CN 201280050495 A CN201280050495 A CN 201280050495A CN 104054328 B CN104054328 B CN 104054328B
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chip
signal
comparator
hole
pixel
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CN104054328A (zh
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长井利明
小关贤
植野洋介
铃木敦史
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Sony Corp
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Sony Corp
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Priority to CN201710167204.8A priority patent/CN107135360A/zh
Priority to CN201710167205.2A priority patent/CN107104668B/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise
    • H03M1/0863—Continuously compensating for, or preventing, undesired influence of physical parameters of noise of switching transients, e.g. glitches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/50—Analogue/digital converters with intermediate conversion to time interval
    • H03M1/56—Input signal compared with linear ramp
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/1205—Multiplexed conversion systems
    • H03M1/123—Simultaneous, i.e. using one converter per channel but with common control or reference circuits for multiple converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Theoretical Computer Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Analogue/Digital Conversion (AREA)
CN201280050495.8A 2011-10-21 2012-10-10 半导体装置、固态图像感测装置和相机系统 Active CN104054328B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201710166521.8A CN106851143B (zh) 2011-10-21 2012-10-10 成像装置和电子设备
CN201710167204.8A CN107135360A (zh) 2011-10-21 2012-10-10 成像装置
CN201710167205.2A CN107104668B (zh) 2011-10-21 2012-10-10 成像装置

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Application Number Priority Date Filing Date Title
JP2011-232282 2011-10-21
JP2011232282A JP6056126B2 (ja) 2011-10-21 2011-10-21 固体撮像装置およびカメラシステム
PCT/JP2012/006497 WO2013057903A1 (ja) 2011-10-21 2012-10-10 半導体装置、固体撮像装置、およびカメラシステム

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CN201710167204.8A Division CN107135360A (zh) 2011-10-21 2012-10-10 成像装置
CN201710167205.2A Division CN107104668B (zh) 2011-10-21 2012-10-10 成像装置
CN201710166521.8A Division CN106851143B (zh) 2011-10-21 2012-10-10 成像装置和电子设备

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CN104054328B true CN104054328B (zh) 2018-05-11

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CN201710167204.8A Pending CN107135360A (zh) 2011-10-21 2012-10-10 成像装置
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CN201710167204.8A Pending CN107135360A (zh) 2011-10-21 2012-10-10 成像装置

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US (7) US9350929B2 (enExample)
EP (3) EP2750375A4 (enExample)
JP (1) JP6056126B2 (enExample)
KR (6) KR20200067928A (enExample)
CN (4) CN107104668B (enExample)
DE (1) DE202012013524U1 (enExample)
TW (1) TWI558210B (enExample)
WO (1) WO2013057903A1 (enExample)

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TW201320739A (zh) 2013-05-16
CN106851143A (zh) 2017-06-13
US20170006243A1 (en) 2017-01-05
KR20190096452A (ko) 2019-08-19
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CN107104668B (zh) 2021-11-16
US9350929B2 (en) 2016-05-24
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CN106851143B (zh) 2019-11-19
WO2013057903A1 (ja) 2013-04-25
KR101925228B1 (ko) 2018-12-04
US20170134679A1 (en) 2017-05-11
US20140232916A1 (en) 2014-08-21
KR102013092B1 (ko) 2019-08-21
EP4429119A3 (en) 2025-01-22
EP2750375A1 (en) 2014-07-02
US20180124340A1 (en) 2018-05-03
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US10027912B2 (en) 2018-07-17
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JP2013090304A (ja) 2013-05-13
US9736409B2 (en) 2017-08-15
US9654708B2 (en) 2017-05-16
KR20140072096A (ko) 2014-06-12
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CN107104668A (zh) 2017-08-29
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US10554912B2 (en) 2020-02-04
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EP2750375A4 (en) 2015-06-03
US20170288691A1 (en) 2017-10-05
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DE202012013524U1 (de) 2017-07-13
US9838626B2 (en) 2017-12-05
KR20170044762A (ko) 2017-04-25
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US9509933B2 (en) 2016-11-29
EP3328072A2 (en) 2018-05-30

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