CN103904035A - Tcat结构及其形成方法 - Google Patents
Tcat结构及其形成方法 Download PDFInfo
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- CN103904035A CN103904035A CN201410079448.7A CN201410079448A CN103904035A CN 103904035 A CN103904035 A CN 103904035A CN 201410079448 A CN201410079448 A CN 201410079448A CN 103904035 A CN103904035 A CN 103904035A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
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CN201410079448.7A CN103904035B (zh) | 2014-03-05 | 2014-03-05 | Tcat结构及其形成方法 |
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CN201410079448.7A CN103904035B (zh) | 2014-03-05 | 2014-03-05 | Tcat结构及其形成方法 |
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CN103904035A true CN103904035A (zh) | 2014-07-02 |
CN103904035B CN103904035B (zh) | 2016-09-21 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104392964A (zh) * | 2014-10-09 | 2015-03-04 | 清华大学 | Dusg 3d nand闪存存储器及其形成方法 |
CN105448925A (zh) * | 2014-08-29 | 2016-03-30 | 旺宏电子股份有限公司 | 半导体结构及其制造方法 |
CN105679828A (zh) * | 2014-12-05 | 2016-06-15 | Imec非营利协会 | 无结垂直三维半导体器件 |
CN106856198A (zh) * | 2015-12-08 | 2017-06-16 | 爱思开海力士有限公司 | 半导体器件的制造方法 |
CN106992184A (zh) * | 2016-01-18 | 2017-07-28 | 爱思开海力士有限公司 | 半导体器件 |
CN107591335A (zh) * | 2016-07-08 | 2018-01-16 | 北大方正集团有限公司 | 电连接结构的制备方法和集成电路芯片 |
CN107887388A (zh) * | 2017-11-27 | 2018-04-06 | 睿力集成电路有限公司 | 晶体管结构、存储单元、存储器阵列及其制备方法 |
CN108461498A (zh) * | 2018-03-30 | 2018-08-28 | 长江存储科技有限责任公司 | 一种3d nand存储器及其制备方法 |
CN110034119A (zh) * | 2017-12-27 | 2019-07-19 | 美光科技公司 | 形成竖向延伸的存储器单元串的阵列的方法 |
CN113646469A (zh) * | 2019-03-27 | 2021-11-12 | 三井金属矿业株式会社 | 印刷电路板用金属箔、带载体的金属箔和覆金属层叠板、及使用其的印刷电路板的制造方法 |
US11641742B2 (en) | 2019-10-15 | 2023-05-02 | Micron Technology, Inc. | Memory arrays and methods used in forming a memory array comprising strings of memory cells |
US11737278B2 (en) | 2019-12-03 | 2023-08-22 | Micron Technology, Inc. | Memory arrays and methods used in forming a memory array comprising strings of memory cells |
US11871566B2 (en) | 2020-02-11 | 2024-01-09 | Lodestar Licensing Group, Llc | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102623458A (zh) * | 2008-12-24 | 2012-08-01 | 海力士半导体有限公司 | 垂直沟道型非易失性存储器件及其制造方法 |
US20120217564A1 (en) * | 2011-02-25 | 2012-08-30 | Tang Sanh D | Semiconductor charge storage apparatus and methods |
US20130221423A1 (en) * | 2012-02-29 | 2013-08-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing same |
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2014
- 2014-03-05 CN CN201410079448.7A patent/CN103904035B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102623458A (zh) * | 2008-12-24 | 2012-08-01 | 海力士半导体有限公司 | 垂直沟道型非易失性存储器件及其制造方法 |
US20120217564A1 (en) * | 2011-02-25 | 2012-08-30 | Tang Sanh D | Semiconductor charge storage apparatus and methods |
US20130221423A1 (en) * | 2012-02-29 | 2013-08-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing same |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448925B (zh) * | 2014-08-29 | 2018-06-22 | 旺宏电子股份有限公司 | 半导体结构及其制造方法 |
CN105448925A (zh) * | 2014-08-29 | 2016-03-30 | 旺宏电子股份有限公司 | 半导体结构及其制造方法 |
CN104392964B (zh) * | 2014-10-09 | 2017-02-15 | 清华大学 | 双顶层选择栅极 3d nand闪存存储器及其形成方法 |
CN104392964A (zh) * | 2014-10-09 | 2015-03-04 | 清华大学 | Dusg 3d nand闪存存储器及其形成方法 |
CN105679828A (zh) * | 2014-12-05 | 2016-06-15 | Imec非营利协会 | 无结垂直三维半导体器件 |
CN106856198A (zh) * | 2015-12-08 | 2017-06-16 | 爱思开海力士有限公司 | 半导体器件的制造方法 |
CN106856198B (zh) * | 2015-12-08 | 2020-10-27 | 爱思开海力士有限公司 | 半导体器件的制造方法 |
CN106992184A (zh) * | 2016-01-18 | 2017-07-28 | 爱思开海力士有限公司 | 半导体器件 |
US11342342B2 (en) | 2016-01-18 | 2022-05-24 | SK Hynix Inc. | Semiconductor device |
CN107591335A (zh) * | 2016-07-08 | 2018-01-16 | 北大方正集团有限公司 | 电连接结构的制备方法和集成电路芯片 |
CN107887388B (zh) * | 2017-11-27 | 2023-06-20 | 长鑫存储技术有限公司 | 晶体管结构、存储单元、存储器阵列及其制备方法 |
CN107887388A (zh) * | 2017-11-27 | 2018-04-06 | 睿力集成电路有限公司 | 晶体管结构、存储单元、存储器阵列及其制备方法 |
CN110034119A (zh) * | 2017-12-27 | 2019-07-19 | 美光科技公司 | 形成竖向延伸的存储器单元串的阵列的方法 |
CN110034119B (zh) * | 2017-12-27 | 2023-10-31 | 美光科技公司 | 形成竖向延伸的存储器单元串的阵列的方法 |
CN108461498A (zh) * | 2018-03-30 | 2018-08-28 | 长江存储科技有限责任公司 | 一种3d nand存储器及其制备方法 |
CN113646469A (zh) * | 2019-03-27 | 2021-11-12 | 三井金属矿业株式会社 | 印刷电路板用金属箔、带载体的金属箔和覆金属层叠板、及使用其的印刷电路板的制造方法 |
US11641742B2 (en) | 2019-10-15 | 2023-05-02 | Micron Technology, Inc. | Memory arrays and methods used in forming a memory array comprising strings of memory cells |
US11737278B2 (en) | 2019-12-03 | 2023-08-22 | Micron Technology, Inc. | Memory arrays and methods used in forming a memory array comprising strings of memory cells |
US11871566B2 (en) | 2020-02-11 | 2024-01-09 | Lodestar Licensing Group, Llc | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells |
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CN103904035B (zh) | 2016-09-21 |
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Inventor after: Wu Huaqiang Inventor after: Wang Bo Inventor after: Qian He Inventor after: Zhu Yiming Inventor after: He Wei Inventor before: Wu Huaqiang Inventor before: Wang Bo Inventor before: Qian He |
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Effective date of registration: 20160715 Address after: 100084-82 box 100084, Beijing, Haidian District Applicant after: TSINGHUA University Applicant after: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. Address before: 100084 Haidian District 100084-82 mailbox Beijing Applicant before: Tsinghua University |
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Address after: 100084 Mailbox 100084-82, Haidian District, Beijing Patentee after: TSINGHUA University Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100084 Mailbox 100084-82, Haidian District, Beijing Patentee before: TSINGHUA University Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |