CN103648766B - 层叠体和层叠体的制造方法 - Google Patents
层叠体和层叠体的制造方法 Download PDFInfo
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- CN103648766B CN103648766B CN201280034470.9A CN201280034470A CN103648766B CN 103648766 B CN103648766 B CN 103648766B CN 201280034470 A CN201280034470 A CN 201280034470A CN 103648766 B CN103648766 B CN 103648766B
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- metal
- base material
- intermediate layer
- ceramic base
- duplexer
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
- B05D1/12—Applying particulate materials
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- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
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Abstract
本发明提供在使用冷喷涂法制作在陶瓷基材上形成有金属被膜的层叠体时陶瓷与金属被膜之间的密合强度高的层叠体、以及此类层叠体的制造方法。该层叠体具备具有绝缘性的陶瓷基材(10)、形成于该陶瓷基材(10)的表面的以金属或合金为主成分的中间层(50)、以及在该中间层(50)的表面形成的金属被膜层(电路层(20)、散热片(40)),所述金属被膜层通过使包含金属或合金的粉末与气体一起加速、并且以固相状态直接喷射并堆积于所述中间层(50)的表面而形成。
Description
技术领域
本发明涉及在绝缘基材上层叠有金属的层叠体、以及层叠体的制造方法。
背景技术
以往,作为在从产业用、汽车用等的电力控制到引擎控制的广泛领域中使用的节能化的关键器件,已知电源模块。电源模块是在作为基材的绝缘基材(例如陶瓷基材)的一个面上隔着由金属被膜形成的电路图案而配设芯片(晶体管)、且在其另一个面上隔着金属被膜配设有温度调节部(冷却部或加热部)的装置(例如参照专利文献1)。作为温度调节部,使用例如在金属或合金的部件中设有冷却用或加热用的热介质的移动路径的元件。在此种电源模块中,使从芯片产生的热经由金属被膜移动至温度调节部,再向外部散热,由此可以进行冷却。
作为在绝缘基材上形成有金属被膜的层叠体的制作方法,可列举例如热喷涂法、冷喷涂法。热喷涂法是通过将被加热至熔融或接近熔融的状态的材料(热喷涂材料)喷射到基材而形成被膜的方法。
另一方面,冷喷涂法是如下的方法:使材料的粉末、与熔点或软化点以下的状态的不活泼气体一起从扩散(拉瓦尔)喷嘴喷射,以固相状态直接与基材冲撞,由此在基材的表面形成被膜的方法(例如,参照专利文献2)。冷喷涂法在比热喷涂法更低的温度下进行加工,因此热应力的影响得到缓和。因此,可以得到无相变且氧化也得到抑制的金属被膜。尤其在基材和形成被膜的材料均为金属的情况下,当金属材料的粉末冲撞基材(或之前所形成的被膜)时,在粉末与基材之间产生塑性变形而得到锚固效果,并且彼此的氧化被膜被破坏而产生在新生面之间形成的金属键,因此可以得到密合强度高的层叠体。
现有技术文献
专利文献
专利文献1:日本特开2011-108999号公报
专利文献2:美国专利第5302414号说明书
发明内容
发明要解决的课题
然而,在将上述层叠体应用于电源模块等的情况下,在基材与金属被膜之间要求较高的密合强度。但是,在对陶瓷基材形成金属被膜的情况下,冷喷涂法中仅在金属侧产生塑性变形,因此在陶瓷基材与金属之间得不到充分的锚固效果。因此,存在形成陶瓷基材和金属被膜之间的密合强度不充分的层叠体的问题。
本发明是鉴于上述情况而完成的,其目的在于,提供陶瓷基材和金属被膜之间的密合强度高的层叠体、以及此类层叠体的制造方法。
用于解决上述课题的方法
为了解决上述课题、实现目的,本发明的层叠体,其特征在于,具备具有绝缘性的陶瓷基材、形成于所述陶瓷基材的表面的中间层、以及在所述中间层的表面形成的金属被膜层,所述中间层以金属或合金为主成分,所述金属被膜层通过使包含金属或合金的粉末与气体一起加速、并且以固相状态直接喷射并堆积于所述中间层的表面而形成。
上述层叠体的特征在于,所述中间层通过将板状的金属或合金部件钎焊在所述陶瓷基材上而形成。
上述层叠体的特征在于,所述陶瓷基材包含氮化物系陶瓷。
上述层叠体的特征在于,所述中间层至少包含以铝为主成分的层。
上述层叠体的特征在于,所述中间层含有选自由锗、镁、硅、铜中的任意金属组成的组中的至少一种金属。
上述层叠体的特征在于,所述中间层还包含以银、镍、金、铜中的任意金属为主成分的层。
上述层叠体的特征在于,所述金属被膜层包含铜或铝。
本发明的层叠体的制造方法,其特征在于,中间层形成工序,在具有绝缘性的陶瓷基材的表面形成以金属或合金为主成分的中间层;以及被膜形成工序,在所述中间层的表面形成金属被膜层,所述金属被膜层通过使包含金属或合金的粉末与气体一起加速、并且以固相状态直接喷射并堆积于所述中间层的表面而形成。
上述层叠体的制造方法的特征在于,所述中间层形成工序包括:钎料配置工序,在所述陶瓷基材的表面配置铝钎料;金属部件配置工序,在所述铝钎料上配置板状的金属或合金部件;热处理工序,对依次配置有所述铝钎料、和所述金属或合金部件的所述陶瓷基材进行热处理。
上述层叠体的制造方法的特征在于,所述钎料配置工序包括以下工序中的任一工序:钎料糊剂在所述陶瓷基材上的涂布、钎料箔在所述陶瓷基材上的载置、和利用蒸镀法或溅射法而实施的钎料在所述陶瓷基材上的附着。
上述层叠体的制造方法的特征在于,所述热处理工序在真空中或不活泼气体气氛中进行。
上述层叠体的制造方法的特征在于,所述铝钎料含有选自由锗、镁、硅、铜中的任意金属组成的组中的至少一种金属。
上述层叠体的制造方法的特征在于,所述金属或合金部件的厚度为1mm以下。
发明效果
根据本发明,在陶瓷基材的表面形成以金属或合金为主成分的中间层,并且在该中间层的表面形成金属被膜层,所述金属被膜层通过使包含金属或合金的粉末与气体一起加速、并以固相状态直接喷射并堆积于该中间层的表面而形成,因此,金属被膜层利用锚固效果与中间层密合,并且在粉末冲撞中间层时,朝向陶瓷基材挤压中间层。由此,可以得到陶瓷基材与金属被膜层之间的密合强度高的层叠体。
附图说明
图1是表示本发明的实施方式的层叠体即电源模块的构成的示意图。
图2是放大表示图1所示的电源模块的主要部分的剖面图。
图3是表示图1所示的电源模块的制作方法的流程图。
图4A是用于说明对陶瓷基材形成铝钎料层的工序的剖面图。
图4B是用于说明在铝钎料层上配置铝箔的工序的剖面图。
图5是表示冷喷涂装置的概况的示意图。
图6是表示用于进行对层叠体的密合强度试验的拉伸试验装置的概略构成的示意图。
图7是表示实施例及比较例的层叠体的制作条件和实验条件、以及实验结果的表。
图8A是表示实施例1的层叠体的剖面的照片。
图8B是放大表示图8A所示的铝箔与铜被膜的边界附近的照片。
图8C是放大表示图8A所示的铝钎料层与氮化铝基材的边界附近的照片。
图9A是表示实施例2的层叠体的剖面的照片。
图9B是放大表示图9A所示的铝箔与铜被膜的边界附近的照片。
图9C是放大表示图9A所示的铝钎料层与氮化硅基材的边界附近的照片。
具体实施方式
以下,参照附图对本发明的实施方式进行详细地说明。需要说明的是,本发明不受以下的实施方式的限定。此外,在以下的说明中参照的各图仅以能理解本发明内容的程度而概略性地表示形状、大小和位置关系。即,本发明不仅仅限于各图中例示的形状、大小和位置关系。
(实施方式)
图1是表示本发明的实施方式的层叠体即电源模块的构成的示意图。此外,图2是放大表示图1所示的层叠体的主要部分的剖面图。
图1所示的电源模块1具有:作为绝缘基板的陶瓷基材10;形成于陶瓷基材10的一个面上的电路层20;利用焊料C1接合于电路层20上的芯片30;以及设置于陶瓷基材10的与电路层20相反侧的面上的散热片40。
陶瓷基材10是由绝缘性材料形成的大致板状的部件。作为绝缘性材料,使用例如:氮化铝、氮化硅等氮化物系陶瓷;氧化铝、氧化镁、氧化锆、块滑石(steatite)、镁橄榄石、莫来石(mullite)、二氧化钛、二氧化硅、赛隆(sialon)等氧化物系陶瓷。
电路层20是利用后述的冷喷涂法形成的金属被膜层,例如包含铜等具有良好的电导率的金属或合金。对于该电路层20,形成用于对芯片30等传送电信号的电路图案。
芯片30通过二极管、晶体管、IGBT(绝缘栅双极晶体管)等半导体元件来实现。需要说明的是,芯片30可根据使用目的而在陶瓷基材10上设置多个。
散热片40是利用后述的冷喷涂法形成的金属被膜层,散热片40由铜、铜合金、铝、铝合金、银、银合金等具有良好的导热性的金属或合金制成。通过此类散热片40,从芯片30产生的热经由陶瓷基材10被放出至外部。
如图2所示,在陶瓷基材10与电路层20之间、以及陶瓷基材10与散热片40之间设置以金属或合金为主成分的中间层50。如后文详细地说明的那样,该中间层50通过使用钎料将板状的金属或合金部件(以下,将其统称为金属部件)接合于陶瓷基材10而形成。
钎料的种类可以根据陶瓷基材10的种类、板状的金属部件的种类进行选择。在本实施方式中,使用以铝为主成分且含有锗、镁、硅、铜中的至少一种的铝钎料。
此外,作为板状的金属部件,使用能够对陶瓷基材10利用钎焊进行接合、且具有能够利用冷喷涂法形成被膜的程度的硬度的金属或合金。该硬度的范围还根据冷喷涂法的成膜条件等而不同,因此不能一概而论,大致上只要是维氏硬度为100HV以下的金属部件,则均可应用。具体而言,可列举铝、银、镍、金、铜或包含这些金属的合金等。在本实施方式中,使用铝作为板状的金属部件,此时,中间层50是就其整体而言以铝为主成分的层。
接着,参照图3~5对电源模块1的制作方法进行说明。图3是表示电源模块1的制作方法的流程图。
首先,在工序S1中,如图4A所示,优选在氮化物系的陶瓷基材10的表面配置铝(Al)钎料51。
作为在陶瓷基材10表面配置铝钎料51的方法,使用公知的各种方法。例如可以利用丝网印刷法将包含有机溶剂及有机粘合剂的糊状的钎料涂布于陶瓷基材10。此外,也可以将箔状的钎料(钎料箔)载置于陶瓷基材10上。或者,还可以利用蒸镀法、溅射法等使钎料附着于陶瓷基材10的表面。
在接下来的工序S2中,如图4B所示,在铝钎料51上配置铝(Al)箔52。铝箔52是厚度为例如0.01mm~0.2mm左右的板状的轧制部件。在本实施方式中,通过如此使用厚度小的部件,从而防止在后述的热处理工序中由铝箔52和陶瓷基材10之间的热膨胀率之差所致的破损。需要说明的是,作为配置于铝钎料51上的部件,不限于箔状的铝,只要厚度为约1mm以下,则也可以配置板状的铝部件。
需要说明的是,如图2所示,在陶瓷基材10的两面形成中间层50的情况下,可以利用2片铝箔52夹持两面配置有铝钎料51的陶瓷基材10。
在接下来的工序S3中,将表面配置有铝钎料51及铝箔52的陶瓷基材10在规定温度下保持规定时间,在真空中实施热处理。利用该热处理,使铝钎料51熔融,得到陶瓷基材10与铝箔52的接合体。由此使设置于陶瓷基材10表面的铝钎料51及铝箔52成为中间层50。需要说明的是,也可以代替真空钎焊而在氮气等不活泼气体气氛中进行热处理。
在接下来的工序S4中,利用冷喷涂法在中间层50上形成金属被膜层(电路层20及散热片40)。图5是表示用于形成金属被膜层的冷喷涂装置的概况的示意图。
图5所示的冷喷涂装置60具有:加热压缩气体的气体加热器61;收容金属被膜层的材料的粉末且将其供给至喷枪63的粉末供给装置62;将加热后的压缩气体和被供给于此处的材料粉末喷射至基材的气体喷嘴64;以及分别用于调节气体加热器61及压缩气体对粉末供给装置62的供给量的阀门65及66。
作为压缩气体,使用氦气、氮气、空气等。供给至气体加热器61的压缩气体被加热至例如50℃以上、且比金属被膜层的材料粉末的熔点低的范围的温度后,被供给至喷枪63。压缩气体的加热温度优选为300~900℃。
另一方面,供给至粉末供给装置62的压缩气体将粉末供给装置62内的材料粉末以规定的喷出量供给至喷枪63。
利用呈扩散形状的气体喷嘴64使被加热后的压缩气体成为超音速流(约340m/s以上)。此时的压缩气体的气体压力优选为1~5MPa左右。这是由于:通过将压缩气体的压力调整至该程度,从而可以实现金属被膜层与中间层50的密合强度的提高。更优选以2~4MPa左右的压力进行处理。供给至喷枪63的材料粉末通过被投入到该压缩气体的超音速流中而被加速,在固相状态下直接以高速与陶瓷基材10上的中间层50冲撞而堆积,形成被膜。需要说明的是,只要是能够使材料粉末以固相状态向陶瓷基材10冲撞而形成被膜的装置,则并不限于图5所示的冷喷涂装置60。
需要说明的是,在形成电路层20作为金属被膜层的情况下,例如可以在中间层50的上层配置形成有电路图案的金属掩模等,并使用例如铜的粉末来形成被膜。另一方面,在形成散热片40作为金属被膜层的情况下,例如使用铝的粉末形成规定厚度的被膜(堆积层),之后,利用激光切削等对该被膜(堆积层)形成所需的流路图案即可。
进而,根据需要将芯片30等部件利用焊料接合于电路层20。由此完成图1所示的电源模块1。
如以上说明的那样,在本实施方式中,在陶瓷基材10的表面使用铝钎料51及铝箔52形成中间层50,利用冷喷涂法在该中间层50上形成金属被膜层。因此,在材料粉末冲撞中间层50时,产生充分的锚固效果,形成牢固密合于中间层50的金属被膜层。此外,在材料粉末的冲撞时,对中间层50施加陶瓷基材10方向的挤压力,因此中间层50相对于陶瓷基材10的接合强度提高。其结果可以得到陶瓷基材10、中间层50和金属被膜层牢固地密合的层叠体。因此,通过将此类层叠体应用于电源模块1,从而可以提高模块整体的机械强度。
此外,根据本实施方式,不使用机械缔结部件、焊料、硅润滑油等即可配设电路层20、散热片40。因此,导热性比以往更为优异,结构也简朴,能够使尺寸小型化。此外,在电源模块1的尺寸与以往为相同程度的情况下,可以增大散热片等主要构成部分所占的比例。
此外,根据本实施方式,将电路层20及散热片40仅隔着以具有良好的导热性的铝为主成分的中间层50而配设于陶瓷基材10上,因此能够使电路层20中产生的热从散热片40高效地散热。
这里,作为例如电源模块用的绝缘基板,一直以来理想的是使用具有良好导热性的氮化物系陶瓷。但是,在对氮化物系陶瓷基板大气钎焊散热片等部件的情况下,两者的接合强度变得不充分。此外,在利用真空钎焊对氮化物系陶瓷基板接合散热片等部件的情况下,在真空钎焊中热处理温度变成高温(例如600℃以上),因此存在因热膨胀率差而发生剥离、破裂的风险。
与此相对,在本实施方式中,对氮化物系陶瓷基材真空(或在不活泼气体气氛中)钎焊铝箔这样的厚度较薄的部件而形成中间层,因此即使热处理温度达到高温,也不会因热膨胀率之差而产生中间层自基板起的剥离、破裂。而且,在该中间层上利用冷喷涂法直接形成作为散热片等部件的金属被膜层,因此能够制作机械强度强且具有良好导热性的电源模块。
需要说明的是,在上述实施方式中,将利用金属被膜层形成的温度调节装置作为使产生自芯片的热进行散热的散热片而进行了说明,但也可以是用于对层叠于芯片等陶瓷基材的部件进行加热而设置的加热装置。
此外,在上述实施方式中,在陶瓷基材10的两侧形成了中间层50及金属被膜层,也可以仅在陶瓷基材10的任意一面(例如散热片40侧的面)设置中间层50及金属被膜层。
此外,在上述实施方式中,作为层叠体的基材,可列举出具有绝缘性的氮化物系陶瓷、氧化物系陶瓷,但对于碳化物系陶瓷等导电性的基材,也可以利用同样的的方法来制作层叠体。
在上述实施方式中,使用铝钎料51及铝箔52形成中间层50,因此大多将中间层50作为以铝为主成分的大致一样的层来进行观察。但是,通过对中间层50的元素分布分析、利用SEM的金属组织观察等,有时还能够对来自板状的铝部件即铝箔52且大致由铝形成的层、与来自铝钎料51且含有铝以外的成分(锗、镁、硅、铜等)的层进行识别。
此外,在上述实施方式中,在代替铝箔52而使用银、镍、金、铜等等其他种类的金属部件的情况下,也可以利用同样的方法来制作层叠体。此时,中间层50有时会成为以该金属为主成分的层和来自铝钎料51且以铝为主成分的层的2层结构。
实施例
利用本实施方式的层叠体的制造方法,制作在氮化物系陶瓷的基材上形成有铜(Cu)被膜的层叠体的试验片,进行了测定基材与铜被膜之间的密合强度的实验。
图6是表示在测定试验片的密合强度时使用的基于简易拉伸试验法的试验装置的示意图。在该试验装置70中,经由粘接剂73将铝销72粘着于被膜层(铜被膜)83,将铝销72从上方插穿固定台71的孔部71a,将试验片80载置于固定台71上,将铝销72向下方拉伸,由此对基材81与隔着中间层82形成的被膜层83之间的密合强度进行了评价。此外,关于比较例,在直接形成于基材81上的被膜层83上粘接铝销72,进行了同样的实验。评价通过被膜层83从基材81剥离的时刻的拉伸应力和剥离状态来进行。需要说明的是,关于基材81的尺寸,实施例、比较例均设为50mm×50mm×0.635mm。
图7是表示实施例及比较例的层叠体的制作条件、实验条件以及实验结果的表。在图7中,“密合强度”栏的数值表示在基材81与被膜层83之间产生剥离时的拉伸应力的值。此外,“密合强度”栏的“≥60MPa”的记载是指:即使试验装置70中产生因粘接剂73的断裂所致的剥离、即在试验装置70中施加能够测定的最大拉伸应力(60MPa),基材81与被膜层83也不会发生剥离。
(实施例1)
作为实施例1,在氮化铝(AlN)基材上配置铝钎料及厚度约0.2mm的铝(Al)箔,在590℃的真空中实施4小时热处理,由此形成中间层。在该中间层上利用冷喷涂法形成厚度约1.0mm的铜(Cu)被膜。此时的成膜条件为:氮气(N2)的温度400℃、喷射压力5MPa。
如图7所示,在实施例1的情况下,在基材81与被膜层83之间得到60MPa以上的密合强度。
图8A~图8C是在实施拉伸试验后利用SEM(扫描型电子显微镜)对由实施例1得到的层叠体的剖面进行观察的照片。图8A是包括氮化铝(AlN)基材、中间层(Al箔+Al钎料层)、铜(Cu)被膜的300倍的放大照片。图8B是表示图8A所示的铝(Al)箔与铜被膜的边界附近的2000倍的放大照片。图8C是表示图8A所示的氮化铝基材与铝(Al)钎料层的边界附近的2000倍的放大照片。
如图8A所示,在中间层内实施了热处理的结果为:在铝箔与铝钎料层之间未观察到明确的边界。此外,如图8B所示,在铝箔的上部观察到铜被膜陷入铝箔而使两者密合的锚固效果。进而,如图8C所示,在氮化铝基材与铝钎料层的边界观察到因热处理而软化后的铝钎料层紧密地结合于氮化铝基材表面的现象。
在这些图8A~8C中均未观察到因拉伸试验所致的剥离、断裂的迹象。
(实施例2)
作为实施例2,在氮化硅(Si3N4)基材上配置铝钎料及厚度约0.2mm的铝(Al)箔,在590℃的真空中实施4小时热处理,由此形成中间层。在该中间层上利用冷喷涂法形成厚度约1.0mm的铜(Cu)被膜。此时的成膜条件与实施例1同样。
如图7所示,在实施例2的情况下,在基材81与被膜层83之间得到60MPa以上的密合强度。
图9A~图9C是在实施拉伸试验后利用SEM(扫描型电子显微镜)对由实施例2得到的层叠体的剖面进行观察的照片。图9A是包括氮化硅(Si3N4)基材、中间层(Al箔+Al钎料层)、铜(Cu)被膜的300倍的放大照片。图9B是表示图9A所示的铝(Al)箔与铜被膜的边界附近的2000倍的放大照片。图9C是表示图9A所示的氮化硅基材与铝(Al)钎料层的边界附近的2000倍的放大照片。
如图9A所示,在实施例2中,也与实施例1同样在中间层内未观察到铝箔与铝钎料层之间的明确的边界。此外,如图9B所示,在铝箔的上部观察到利用锚固效果将铜被膜密合于铝箔的现象。如图9C所示,在氮化硅基材与铝钎料层的边界也观察到铝钎料层紧密结合于氮化硅基材的状态,并未确认到中间层或铜被膜自氮化硅基材的剥离。
(比较例)
作为比较例1,在氮化铝(AlN)基材上利用冷喷涂法直接形成铜(Cu)被膜。此外,作为比较例2,在氮化硅(Si3N4)基材上利用冷喷涂法直接形成铜(Cu)被膜。需要说明的是,比较例中的成膜条件与实施例1相同。
如图7所示,在比较例1及2中,并未对基材附着铜被膜,在试验片的制作后铜被膜自基材剥离,无法进行拉伸试验。
符号说明
1电源模块
10陶瓷基材
20电路层
30芯片
40散热片
50中间层
51铝钎料
52铝箔
60冷喷涂装置
61气体加热器
62粉末供给装置
63喷枪
64气体喷嘴
65阀门
70试验装置
71固定台
71a孔部
72铝销
73粘接剂
80试验片
81基材
82中间层
83被膜层(铜被膜)
Claims (10)
1.一种层叠体,其特征在于,具备具有绝缘性的陶瓷基材、形成于所述陶瓷基材的表面的中间层、以及在所述中间层的表面形成的金属被膜层,
所述中间层以金属或含有该金属的合金为主成分,
所述金属被膜层通过使包含金属或含有该金属的合金的粉末与气体一起加速、并且以固相状态直接喷射并堆积于所述中间层的表面而形成,
所述中间层通过将厚度为1mm以下的板状的、金属或含有该金属的合金的部件钎焊在所述陶瓷基材上而形成,所述板状的金属或含有该金属的合金的维氏硬度为100HV以下。
2.根据权利要求1所述的层叠体,其特征在于,所述陶瓷基材包含氮化物系陶瓷。
3.根据权利要求1所述的层叠体,其特征在于,所述中间层至少包含以铝为主成分的层。
4.根据权利要求3所述的层叠体,其特征在于,所述中间层含有选自由锗、镁、硅、铜中的任意成分组成的组中的至少一种成分。
5.根据权利要求4所述的层叠体,其特征在于,所述中间层还包含以银、镍、金、铜中的任意金属为主成分的层。
6.根据权利要求1~5中任一项所述的层叠体,其特征在于,所述金属被膜层包含铜或铝。
7.一种层叠体的制造方法,其特征在于,包括:
中间层形成工序,在具有绝缘性的陶瓷基材的表面形成以金属或含有该金属的合金为主成分的中间层;以及
被膜形成工序,在所述中间层的表面形成金属被膜层,所述金属被膜层通过使包含金属或含有该金属的合金的粉末与气体一起加速、并且以固相状态直接喷射并堆积于所述中间层的表面而形成,
所述中间层形成工序包括:
钎料配置工序,在所述陶瓷基材的表面配置铝钎料;
金属部件配置工序,在所述铝钎料上配置厚度为1mm以下的板状的、金属或含有该金属的合金的部件;
热处理工序,对依次配置有所述铝钎料和所述金属或所述铝钎料和含有该金属的合金的部件的所述陶瓷基材进行热处理,
所述板状的金属或含有该金属的合金的维氏硬度为100HV以下。
8.根据权利要求7所述的层叠体的制造方法,其特征在于,所述钎料配置工序包括以下工序中的任一工序:
钎料糊剂在所述陶瓷基材上的涂布、
钎料箔在所述陶瓷基材上的载置、和
利用蒸镀法或溅射法而实施的钎料在所述陶瓷基材上的附着。
9.根据权利要求7所述的层叠体的制造方法,其特征在于,所述热处理工序在真空中或不活泼气体气氛中进行。
10.根据权利要求9所述的层叠体的制造方法,其特征在于,所述铝钎料含有选自由锗、镁、硅、铜中的任意成分组成的组中的至少一种成分。
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- 2012-07-11 WO PCT/JP2012/067752 patent/WO2013008865A1/ja active Application Filing
- 2012-07-11 CN CN201280034470.9A patent/CN103648766B/zh not_active Expired - Fee Related
- 2012-07-11 US US14/130,566 patent/US20140134448A1/en not_active Abandoned
- 2012-07-11 KR KR1020147000588A patent/KR101572586B1/ko not_active IP Right Cessation
- 2012-07-11 EP EP12810573.1A patent/EP2732967A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
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CN103648766A (zh) | 2014-03-19 |
JP5548167B2 (ja) | 2014-07-16 |
EP2732967A4 (en) | 2015-02-18 |
US20140134448A1 (en) | 2014-05-15 |
JP2013018190A (ja) | 2013-01-31 |
EP2732967A1 (en) | 2014-05-21 |
WO2013008865A1 (ja) | 2013-01-17 |
KR20140022102A (ko) | 2014-02-21 |
KR101572586B1 (ko) | 2015-11-27 |
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